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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RTQ040P02TR

RTQ040P02TR

MOSFET P-CH 20V 4A TSMT6

Rohm Semiconductor

4,715 -
RTQ040P02TR

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 4A (Ta) 2.5V, 4.5V 50mOhm @ 4A, 4.5V Surface Mount 2V @ 1mA 12.2 nC @ 4.5 V 20 V ±12V 1350 pF @ 10 V - - TSMT6 (SC-95) - 1.25W (Ta) 150°C (TJ)
IRF7422D2TRPBF

IRF7422D2TRPBF

MOSFET P-CH 20V 4.3A 8SO

Infineon Technologies

9,495 -
IRF7422D2TRPBF

数据表

FETKY™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4.3A (Ta) 2.7V, 4.5V 90mOhm @ 2.2A, 4.5V Surface Mount 700mV @ 250µA (Min) 22 nC @ 4.5 V 20 V ±12V 610 pF @ 15 V - Schottky Diode (Isolated) 8-SO - 2W (Ta) -55°C ~ 150°C (TJ)
FQT4N25TF

FQT4N25TF

MOSFET N-CH 250V 830MA SOT223-4

onsemi

7,329 -
FQT4N25TF

数据表

QFET® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 830mA (Tc) 10V 1.75Ohm @ 415mA, 10V Surface Mount 5V @ 250µA 5.6 nC @ 10 V 250 V ±30V 200 pF @ 25 V - - SOT-223-4 - 2.5W (Tc) -55°C ~ 150°C (TJ)
NTMTS1D5N08MC

NTMTS1D5N08MC

PTNG 80V IN CEBU PQFN88

onsemi

3,000 -
NTMTS1D5N08MC

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 33A (Ta), 287A (Tc) 6V, 10V 1.56mOhm @ 80A, 10V Surface Mount 4V @ 650µA 140 nC @ 10 V 80 V ±20V 10400 pF @ 40 V - - 8-DFNW (8.3x8.4) - 3.3W (Ta) -55°C ~ 150°C (TJ)
NTH4L095N065SC1

NTH4L095N065SC1

SIC MOS TO247-4L 650V

onsemi

420 -
NTH4L095N065SC1

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 31A (Tc) 15V, 18V 105mOhm @ 12A, 18V Through Hole 4.3V @ 4mA 50 nC @ 10 V 650 V +22V, -8V 956 pF @ 325 V - - TO-247-4 - 129W (Tc) -55°C ~ 175°C (TJ)
NTH4L070N120M3S

NTH4L070N120M3S

SILICON CARBIDE (SIC) MOSFET EL

onsemi

175 -
NTH4L070N120M3S

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 34A (Tc) 18V 87mOhm @ 15A, 18V Through Hole 4.4V @ 7mA 57 nC @ 18 V 1200 V +22V, -10V 1230 pF @ 800 V - - TO-247-4L - 160W (Tc) -55°C ~ 175°C (TJ)
IPT017N10NM5LF2ATMA1

IPT017N10NM5LF2ATMA1

IPT017N10NM5LF2ATMA1

Infineon Technologies

2,000 -
IPT017N10NM5LF2ATMA1

数据表

OptiMOS™ 5 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 32A (Ta), 321A (Tc) 10V, 15V 1.6mOhm @ 150A, 15V Surface Mount 3.9V @ 280µA 206 nC @ 10 V 100 V ±20V 17000 pF @ 50 V - - PG-HSOF-8-1 - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ)
NTMFS5C604NLT3G

NTMFS5C604NLT3G

MOSFET N-CH 60V 40A/287A 5DFN

onsemi

4,853 -
NTMFS5C604NLT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40A (Ta), 287A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V Surface Mount 2V @ 250µA 120 nC @ 10 V 60 V ±20V 8900 pF @ 25 V - - 5-DFN (5x6) (8-SOFL) - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ)
NVMTS1D1N04CTXG

NVMTS1D1N04CTXG

T6 40V SL AIZU SINGLE NCH PQFN 8

onsemi

2,909 -
NVMTS1D1N04CTXG

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 48.8A (Ta), 277A (Tc) 10V 1.1mOhm @ 50A, 10V Surface Mount 4V @ 210µA 86 nC @ 10 V 40 V ±20V 5410 pF @ 25 V AEC-Q101 - 8-DFNW (8.3x8.4) Automotive 4.7W (Ta), 153W (Tc) -55°C ~ 175°C (TJ)
IMT65R083M1HXUMA1

IMT65R083M1HXUMA1

SILICON CARBIDE MOSFET

Infineon Technologies

1,726 -
IMT65R083M1HXUMA1

数据表

CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active - SiCFET (Silicon Carbide) - 18V - Surface Mount - - 650 V - - - - PG-HSOF-8-2 - - -
SIHP050N60E-GE3

SIHP050N60E-GE3

MOSFET N-CH 600V 51A TO220AB

Vishay Siliconix

926 -
SIHP050N60E-GE3

数据表

E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 51A (Tc) 10V 50mOhm @ 23A, 10V Through Hole 5V @ 250µA 130 nC @ 10 V 600 V ±30V 3459 pF @ 100 V - - TO-220AB - 278W (Tc) -55°C ~ 150°C (TJ)
IPDQ60R037CM8XTMA1

IPDQ60R037CM8XTMA1

IPDQ60R037CM8XTMA1

Infineon Technologies

750 -
IPDQ60R037CM8XTMA1

数据表

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 65A (Tj) 10V 37mOhm @ 27A, 10V Surface Mount 4.7V @ 680µA 79 nC @ 10 V 600 V ±20V 3459 pF @ 400 V - - PG-HDSOP-22 - 338W (Tc) -55°C ~ 150°C (TJ)
IMDQ75R060M1HXUMA1

IMDQ75R060M1HXUMA1

IMDQ75R060M1HXUMA1

Infineon Technologies

705 -
IMDQ75R060M1HXUMA1

数据表

CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 34A (Tc) 15V, 20V 55mOhm @ 11.1A, 20V Surface Mount 5.6V @ 4mA 23 nC @ 18 V 750 V +20V, -2V 779 pF @ 500 V - - PG-HDSOP-22-1 - 167W (Tc) -55°C ~ 175°C (TJ)
NTBLS1D5N10MCTXG

NTBLS1D5N10MCTXG

MOSFET - POWER, SINGLE, N-CHANNE

onsemi

1,415 -
NTBLS1D5N10MCTXG

数据表

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 32A (Ta), 312A (Tc) 10V 1.5mOhm @ 80A, 10V Surface Mount 4V @ 799µA 131 nC @ 10 V 100 V ±20V 10100 pF @ 50 V - - 8-HPSOF - 3.4W (Ta), 322W (Tc) -55°C ~ 175°C (TJ)
IPDQ60T040S7AXTMA1

IPDQ60T040S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

750 -
IPDQ60T040S7AXTMA1

数据表

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 54A (Tc) 12V 40mOhm @ 13A, 12V Surface Mount 4.5V @ 780µA 83 nC @ 12 V 600 V ±20V 3128 pF @ 300 V AEC-Q101 - PG-HDSOP-22-1 Automotive 272W (Tc) -55°C ~ 150°C (TJ)
TSM60NE084CIT C0G

TSM60NE084CIT C0G

600V, 21A, SINGLE N-CHANNEL HIGH

Taiwan Semiconductor Corporation

2,000 -
TSM60NE084CIT C0G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 21A (Tc) 10V, 12V 82mOhm @ 7A, 12V Through Hole 6V @ 2.9mA 69 nC @ 10 V 600 V ±30V 2930 pF @ 300 V - - ITO-220TL - 83W (Tc) -55°C ~ 150°C (TJ)
IMLT65R050M2HXTMA1

IMLT65R050M2HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

315 -
IMLT65R050M2HXTMA1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
BUK9275-100A,118

BUK9275-100A,118

MOSFET N-CH 100V 21.7A DPAK

Nexperia USA Inc.

6,161 -
BUK9275-100A,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 21.7A (Tc) 4.5V, 10V 72mOhm @ 10A, 10V Surface Mount 2V @ 1mA - 100 V ±10V 1690 pF @ 25 V AEC-Q101 - DPAK Automotive 88W (Tc) -55°C ~ 175°C (TJ)
AO4447

AO4447

MOSFET P-CH 30V 15A 8SOIC

Alpha & Omega Semiconductor Inc.

6,817 -
AO4447

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 15A (Ta) 4V, 10V 7.5mOhm @ 15A, 10V Surface Mount 1.6V @ 250µA 120 nC @ 10 V 30 V ±20V 6600 pF @ 15 V - - 8-SOIC - 3.1W (Ta) -55°C ~ 150°C (TJ)
FDD20AN06A0-F085

FDD20AN06A0-F085

MOSFET N-CH 60V 8A/45A TO252AA

onsemi

5,602 -
FDD20AN06A0-F085

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8A (Ta), 45A (Tc) 10V 20mOhm @ 45A, 10V Surface Mount 4V @ 250µA 19 nC @ 10 V 60 V ±20V 950 pF @ 25 V AEC-Q101 - TO-252AA Automotive 90W (Tc) -55°C ~ 175°C (TJ)
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