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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
R6077VNZC17 600V 29A TO-3PF, PRESTOMOS WITH Rohm Semiconductor	420	-	询价单	数据表	-	TO-3P-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	29A (Tc)	10V, 15V	51mOhm @ 23A, 15V	Through Hole	6.5V @ 1.9mA	108 nC @ 10 V	600 V	±30V	5200 pF @ 100 V	-	-	TO-3PF	-	113W (Tc)	150°C (TJ)
GAN111-650WSBQ GAN111-650WSB/SOT429/TO-247 Nexperia USA Inc.	249	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	GaNFET (Gallium Nitride)	21A (Ta)	10V	114mOhm @ 14A, 10V	Through Hole	4.8V @ 1mA	4.9 nC @ 10 V	650 V	±20V	336 pF @ 400 V	-	-	TO-247-3L	-	107W (Ta)	-55°C ~ 175°C (TJ)
NTBLS001N06C MOSFET N-CH 60V 51A/422A 8HPSOF onsemi	1,764	-	询价单	数据表	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	51A (Ta), 422A (Tc)	6V, 10V	0.9mOhm @ 80A, 10V	Surface Mount	4V @ 562µA	143 nC @ 10 V	60 V	±20V	11575 pF @ 30 V	-	-	8-HPSOF	-	4.2W (Ta), 284W (Tc)	-55°C ~ 175°C (TJ)
AOK150V120X2 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	220	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	20A (Tc)	15V	195mOhm @ 3.9A, 15V	Through Hole	3.6V @ 3.9mA	28.3 nC @ 15 V	1200 V	+15V, -5V	664 pF @ 800 V	-	-	TO-247	-	115W (Tj)	-55°C ~ 175°C (TJ)
IPF021N13NM6ATMA1 TRENCH >=100V Infineon Technologies	820	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPT129N20NM6ATMA1 TRENCH >=100V Infineon Technologies	1,895	-	询价单	数据表	OptiMOS™ 6	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	11A (Ta), 87A (Tc)	10V, 15V	12mOhm @ 65A, 15V	Surface Mount	4.5V @ 129µA	56 nC @ 10 V	200 V	±20V	3800 pF @ 100 V	-	-	PG-HSOF-8-1	-	3.8W (Ta), 234W (Tc)	-55°C ~ 175°C (TJ)
R6049YNZ4C13 NCH 600V 49A, TO-247G, POWER MOS Rohm Semiconductor	590	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	49A (Tc)	10V, 12V	82mOhm @ 11A, 12V	Through Hole	6V @ 2.9mA	65 nC @ 10 V	600 V	±30V	2940 pF @ 100 V	-	-	TO-247G	-	448W (Tc)	150°C (TJ)
MCTL300N10YHE3-TP N-CHANNEL MOSFET,TOLL-8L Micro Commercial Co	3,900	-	询价单	数据表	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	300A (Tc)	10V	1.55mOhm @ 30A, 10V	Surface Mount	3.9V @ 250µA	166 nC @ 10 V	100 V	±20V	10051 pF @ 50 V	AEC-Q101	-	TOLL-8L	Automotive	375W (Tj)	-55°C ~ 175°C (TJ)
RJ1R10BBHTL1 NCH 150V 105A, TO-263AB, POWER M Rohm Semiconductor	790	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	105A (Tc)	6V, 10V	8.2mOhm @ 50A, 10V	Surface Mount	4V @ 1mA	130 nC @ 10 V	150 V	±20V	7750 pF @ 75 V	-	-	TO-263AB	-	181W (Tc)	150°C (TJ)
R6038YNZ4C13 600V 38A TO-247, HIGH-SPEED SWIT Rohm Semiconductor	569	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	38A (Tj)	10V, 12V	96mOhm @ 9A, 12V	Through Hole	6V @ 2.5mA	50 nC @ 10 V	600 V	±30V	2350 pF @ 100 V	-	-	TO-247	-	348W (Tc)	150°C (TJ)
NTPF095N65S3H POWER MOSFET, N-CHANNEL, SUPERFE onsemi	715	-	询价单	数据表	SuperFET® III	TO-220-3 Full Pack	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	30A (Tj)	10V	95mOhm @ 15A, 10V	Through Hole	4V @ 2.8mA	58 nC @ 10 V	650 V	±30V	2833 pF @ 400 V	-	-	TO-220FP	-	40W (Tc)	-55°C ~ 150°C (TJ)
IPI60R099CPXKSA1 MOSFET N-CH 600V 31A TO262-3 Infineon Technologies	493	-	询价单	数据表	CoolMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	31A (Tc)	10V	99mOhm @ 18A, 10V	Through Hole	3.5V @ 1.2mA	80 nC @ 10 V	600 V	±20V	2800 pF @ 100 V	-	-	PG-TO262-3	-	255W (Tc)	-55°C ~ 150°C (TJ)
NVHL1000N170M1 SIC 1700V MOS 1O IN TO247-3L onsemi	397	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	4.2A (Tc)	20V	1.43Ohm @ 2A, 20V	Through Hole	4.3V @ 640µA	14 nC @ 20 V	1700 V	+25V, -15V	150 pF @ 1000 V	AEC-Q101	-	TO-247-3	Automotive	48W (Tc)	-55°C ~ 175°C (TJ)
IMTA65R050M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	254	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPA65R065C7XKSA1 MOSFET N-CH 650V 15A TO220-FP Infineon Technologies	230	-	询价单	数据表	CoolMOS™ C7	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	65mOhm @ 17.1A, 10V	Through Hole	4V @ 850µA	64 nC @ 10 V	650 V	±20V	3020 pF @ 400 V	-	-	PG-TO220-FP	-	34W (Tc)	-55°C ~ 150°C (TJ)
IPT60T040S7XTMA1 HIGH POWER_NEW Infineon Technologies	1,998	-	询价单	数据表	CoolMOS™	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13A (Tj)	12V	40mOhm @ 13A, 12V	Surface Mount	4.5V @ 780µA	83 nC @ 12 V	600 V	±20V	3128 pF @ 300 V	-	-	PG-HSOF-8-2	-	245W (Tc)	-55°C ~ 150°C (TJ)
NTHL023N065M3S SIC MOS TO247-3L 23MOHM 650V M3S onsemi	315	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	67.9A (Tc)	15V, 18V	23mOhm @ 20A, 18V	Through Hole	2.62V @ 10mA	70.1 nC @ 18 V	650 V	+22V, -8V	1782 pF @ 400 V	-	-	TO-247-3LD	-	245W (Tc)	-55°C ~ 175°C (TJ)
FCPF7N60T MOSFET N-CH 600V 7A TO220F onsemi	7,521	-	询价单	数据表	SuperFET™	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	600mOhm @ 3.5A, 10V	Through Hole	5V @ 250µA	30 nC @ 10 V	600 V	±30V	920 pF @ 25 V	-	-	TO-220F-3	-	31W (Tc)	-55°C ~ 150°C (TJ)
STP60NE06L-16 MOSFET N-CH 60V 60A TO220AB STMicroelectronics	6,251	-	询价单	数据表	STripFET™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	5V, 10V	14mOhm @ 30A, 10V	Through Hole	2.5V @ 250µA	70 nC @ 5 V	60 V	±15V	4150 pF @ 25 V	-	-	TO-220	-	150W (Tc)	175°C (TJ)
STI17NF25 MOSFET N-CH 250V 17A I2PAK STMicroelectronics	6,694	-	询价单	数据表	STripFET™ II	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	10V	165mOhm @ 8.5A, 10V	Through Hole	4V @ 250µA	29.5 nC @ 10 V	250 V	±20V	1000 pF @ 25 V	-	-	I2PAK	-	90W (Tc)	-55°C ~ 150°C (TJ)

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