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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
DMTH83M2SPSW-13 MOSFET BVDSS: 61V~100V POWERDI50 Diodes Incorporated	9,278	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	165A (Tc)	6V, 10V	2.9mOhm @ 30A, 10V	Surface Mount, Wettable Flank	4V @ 250µA	87 nC @ 10 V	80 V	±20V	5466 pF @ 40 V	-	-	PowerDI5060-8 (Type UX)	-	4.1W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)
IRL3715STRL MOSFET N-CH 20V 54A D2PAK Infineon Technologies	4,698	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	54A (Tc)	4.5V, 10V	14mOhm @ 26A, 10V	Surface Mount	3V @ 250µA	17 nC @ 4.5 V	20 V	±20V	1060 pF @ 10 V	-	-	D2PAK	-	3.8W (Ta), 71W (Tc)	-55°C ~ 175°C (TJ)
DMTH6004LPSWQ-13 MOSFET BVDSS: 41V~60V POWERDI506 Diodes Incorporated	9,655	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	22A (Ta), 100A (Tc)	4.5V, 10V	3.1mOhm @ 25A, 10V	Surface Mount, Wettable Flank	3V @ 250µA	78.3 nC @ 10 V	60 V	±20V	5399 pF @ 30 V	AEC-Q101	-	PowerDI5060-8 (Type UX)	Automotive	2.6W (Ta), 138W (Tc)	-55°C ~ 175°C (TJ)
IQE018N06NM6CGATMA1 TRENCH 40<-<100V Infineon Technologies	8,182	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IQE018N06NM6ATMA1 TRENCH 40<-<100V Infineon Technologies	9,946	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFBF20PBF-BE3 MOSFET N-CH 900V 1.7A TO220AB Vishay Siliconix	7,183	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1.7A (Tc)	-	8Ohm @ 1A, 10V	Through Hole	4V @ 250µA	38 nC @ 10 V	900 V	±20V	490 pF @ 25 V	-	-	TO-220AB	-	54W (Tc)	-55°C ~ 150°C (TJ)
IRF3315LPBF MOSFET N-CH 150V 21A TO262 Infineon Technologies	4,078	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	10V	82mOhm @ 12A, 10V	Through Hole	4V @ 250µA	95 nC @ 10 V	150 V	±20V	1300 pF @ 25 V	-	-	TO-262	-	3.8W (Ta), 94W (Tc)	-55°C ~ 175°C (TJ)
STL24N65M2 MOSFET N-CH 650V 14A PWRFLAT HV STMicroelectronics	4,843	-	询价单	数据表	MDmesh™ M2	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	10V	250mOhm @ 7A, 10V	Surface Mount	4V @ 250µA	29 nC @ 10 V	650 V	±25V	1060 pF @ 100 V	-	-	PowerFlat™ (8x8) HV	-	125W (Tc)	-55°C ~ 150°C (TJ)
DMTH4001SPSQ-13 MOSFET BVDSS: 31V~40V POWERDI506 Diodes Incorporated	9,980	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	225A (Tc)	10V	1mOhm @ 30A, 10V	Surface Mount	4V @ 250µA	144 nC @ 10 V	40 V	±20V	10787 pF @ 20 V	AEC-Q101	-	PowerDI5060-8 (Type K)	Automotive	3.1W (Ta), 187.5W (Tc)	-55°C ~ 175°C (TJ)
IPP65R660CFDAAKSA1 MOSFET N-CH 650V 6A TO220-3 Infineon Technologies	9,370	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	660mOhm @ 3.2A, 10V	Through Hole	4.5V @ 200µA	20 nC @ 10 V	650 V	±20V	543 pF @ 100 V	AEC-Q101	-	PG-TO220-3	Automotive	62.5W (Tc)	-40°C ~ 150°C (TJ)
FQPF13N50CSDTU MOSFET N-CH 500V 13A TO220F onsemi	6,912	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	480mOhm @ 6.5A, 10V	Through Hole	4V @ 250µA	56 nC @ 10 V	500 V	±30V	2055 pF @ 25 V	-	-	TO-220F-3	-	48W (Tc)	-55°C ~ 150°C (TJ)
SFH154 MOSFET N-CH 150V 34A TO3P onsemi	4,451	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	34A (Tc)	10V	75mOhm @ 17A, 10V	Through Hole	4V @ 250µA	110 nC @ 10 V	150 V	±30V	3370 pF @ 25 V	-	-	TO-3P	-	204W (Tc)	-55°C ~ 150°C (TJ)
IXFH46N30T MOSFET N-CH 300V 46A TO247 Littelfuse Inc.	300	-	询价单	数据表	HiPerFET™, Trench	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	46A (Tc)	10V	80mOhm @ 23A, 10V	Through Hole	5V @ 4mA	86 nC @ 10 V	300 V	±20V	4770 pF @ 25 V	-	-	TO-247 (IXTH)	-	460W (Tc)	-55°C ~ 150°C (TJ)
IPA60R060C7XKSA1 MOSFET N-CH 600V 16A TO220 Infineon Technologies	286	-	询价单	数据表	CoolMOS™ C7	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	10V	60mOhm @ 15.9A, 10V	Through Hole	4V @ 800µA	68 nC @ 10 V	600 V	±20V	2850 pF @ 400 V	-	-	PG-TO220-FP	-	34W (Tc)	-55°C ~ 150°C (TJ)
SIHR080N60E-T1-GE3 E SERIES POWER MOSFET POWERPAK 8 Vishay Siliconix	1,990	-	询价单	数据表	E	8-PowerSMD, Gull Wing	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	51A (Tc)	10V	84mOhm @ 17A, 10V	Surface Mount	5V @ 250µA	63 nC @ 10 V	600 V	±30V	2557 pF @ 100 V	-	-	PowerPAK® 8 x 8	-	500W (Tc)	-55°C ~ 150°C (TJ)
NVBG095N65S3F SF3 FRFET AUTO, 95MOHM, D2PAK 7L onsemi	603	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	36A (Tc)	10V	95mOhm @ 18A, 10V	Surface Mount	5V @ 860µA	66 nC @ 10 V	650 V	±30V	3020 pF @ 400 V	AEC-Q101	-	D2PAK-7	Automotive	272W (Tc)	-55°C ~ 150°C (TJ)
NVBG1000N170M1 SIC 1700V MOS 1O IN TO263-7L onsemi	1,280	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	4.3A (Tc)	20V	1.43Ohm @ 2A, 20V	Surface Mount	4.3V @ 640µA	14 nC @ 20 V	1700 V	+25V, -15V	150 pF @ 1000 V	AEC-Q101	-	D2PAK-7	Automotive	51W (Tc)	-55°C ~ 175°C (TJ)
RJ1P10BBHTL1 NCH 100V 105A, TO-263AB, POWER M Rohm Semiconductor	730	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	105A (Tc)	6V, 10V	3mOhm @ 90A, 10V	Surface Mount	4V @ 1mA	135 nC @ 10 V	100 V	±20V	8600 pF @ 50 V	-	-	TO-263AB	-	189W (Tc)	150°C (TJ)
IPB022N12NM6ATMA1 TRENCH >=100V Infineon Technologies	945	-	询价单	数据表	OptiMOS™ 6	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	29A (Ta), 167A (Tc)	8V, 10V	2.2mOhm @ 100A, 10V	Surface Mount	3.6V @ 275µA	141 nC @ 10 V	120 V	±20V	11000 pF @ 60 V	-	-	PG-TO263-3-2	-	3.8W (Ta), 395W (Tc)	-55°C ~ 175°C (TJ)
AIMZA75R140M1HXKSA1 IGBT Infineon Technologies	230	-	询价单	数据表	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	16A (Tj)	15V, 20V	129mOhm @ 4.7A, 20V	Through Hole	5.6V @ 1.7mA	13 nC @ 18 V	750 V	+23V, -5V	351 pF @ 500 V	AEC-Q101	-	PG-TO247-4	Automotive	86W (Tc)	-55°C ~ 175°C (TJ)

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