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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
NVHL110N65S3HF

NVHL110N65S3HF

SUPERFER3 FRFET AUTOMOTIVE 110MO

onsemi

430 -
NVHL110N65S3HF

数据表

SuperFET® III, FRFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 110mOhm @ 15A, 10V Through Hole 5V @ 740µA 58 nC @ 10 V 650 V ±30V 2753 pF @ 400 V - - TO-247-3 - 240W (Tc) -55°C ~ 150°C (TJ)
GANE3R9-150QBAZ

GANE3R9-150QBAZ

GANE3R9-150QBA/SOT8091/VQFN7

Nexperia USA Inc.

2,430 -
GANE3R9-150QBAZ

数据表

- 25-PowerVFQFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 100A (Ta) 5V 3.9mOhm @ 30A, 5V Surface Mount 2.1V @ 12mA 20 nC @ 5 V 150 V +6V, -4V 2200 pF @ 75 V - - 25-VQFN (4x6) - 65W (Ta) -40°C ~ 150°C (TJ)
NVH082N65S3F

NVH082N65S3F

SUPERFER3 FRFET AUTOMOTIVE 82MOH

onsemi

438 -
NVH082N65S3F

数据表

SuperFET® III, FRFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 40A (Tc) 10V 82mOhm @ 20A, 10V Through Hole 5V @ 1mA 81 nC @ 10 V 650 V ±30V 3410 pF @ 400 V - - TO-247-3 - 313W (Tc) -55°C ~ 150°C (TJ)
TSM60NE069CIT C0G

TSM60NE069CIT C0G

600V, 24A, SINGLE N-CHANNEL HIGH

Taiwan Semiconductor Corporation

2,000 -
TSM60NE069CIT C0G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V, 12V 60mOhm @ 8A, 12V Through Hole 6V @ 3.5mA 89 nC @ 10 V 600 V ±30V 3551 pF @ 300 V - - ITO-220TL - 89W (Tc) -55°C ~ 150°C (TJ)
NTBLS1D7N10MCTXG

NTBLS1D7N10MCTXG

MOSFET, POWER, SINGLE N-CHANNEL,

onsemi

1,930 -
NTBLS1D7N10MCTXG

数据表

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 29A (Ta), 272A (Tc) 10V 1.8mOhm @ 80A, 10V Surface Mount 4V @ 698µA 115 nC @ 10 V 100 V ±20V 9200 pF @ 50 V - - 8-HPSOF - 3.4W (Ta), 295W (Tc) -55°C ~ 175°C (TJ)
IPDQ60R045CFD7XTMA1

IPDQ60R045CFD7XTMA1

HIGH POWER_NEW PG-HDSOP-22

Infineon Technologies

750 -
IPDQ60R045CFD7XTMA1

数据表

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active - MOSFET (Metal Oxide) - - - Surface Mount - - 600 V - - - - PG-HDSOP-22-1 - - -
TSM4NB65CI

TSM4NB65CI

650V, 4A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

3,237 -
TSM4NB65CI

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 3.37Ohm @ 2A, 10V Through Hole 4.5V @ 250µA 13.46 nC @ 10 V 650 V ±30V 549 pF @ 25 V - - ITO-220 - 25W (Tc) -55°C ~ 150°C (TJ)
TSM5NC50CF

TSM5NC50CF

500V, 5A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

3,632 -
TSM5NC50CF

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.38Ohm @ 1.7A, 10V Through Hole 4.5V @ 250µA 15 nC @ 10 V 500 V ±30V 586 pF @ 50 V - - ITO-220S - 40W (Tc) -55°C ~ 150°C (TJ)
IRFR1018ETR

IRFR1018ETR

MOSFET N-CH 60V 56A DPAK

UMW

6,449 -
IRFR1018ETR

数据表

* TO-252-3, DPAK (2 Leads + Tab), SC-63 Active N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 8.4mOhm @ 47A, 10V Surface Mount 4V @ 100µA - 60 V ±20V - - - TO-252 (DPAK) - 110W (Tc) -55°C ~ 155°C (TJ)
TN0610N3-G-P003

TN0610N3-G-P003

MOSFET N-CH 100V 500MA TO92-3

Microchip Technology

3,349 -
TN0610N3-G-P003

数据表

- TO-226-3, TO-92-3 (TO-226AA) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500mA (Tj) 3V, 10V 1.5Ohm @ 750mA, 10V Through Hole 2V @ 1mA - 100 V ±20V 150 pF @ 25 V - - TO-92-3 - 1W (Tc) -55°C ~ 150°C (TJ)
TN0610N3-G-P013

TN0610N3-G-P013

MOSFET N-CH 100V 500MA TO92-3

Microchip Technology

3,397 -
TN0610N3-G-P013

数据表

- TO-226-3, TO-92-3 (TO-226AA) Tape & Box (TB) Active N-Channel MOSFET (Metal Oxide) 500mA (Tj) 3V, 10V 1.5Ohm @ 750mA, 10V Through Hole 2V @ 1mA - 100 V ±20V 150 pF @ 25 V - - TO-92-3 - 1W (Tc) -55°C ~ 150°C (TJ)
IPB065N06L G

IPB065N06L G

MOSFET N-CH 60V 80A TO263-3

Infineon Technologies

4,940 -
IPB065N06L G

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 6.2mOhm @ 80A, 10V Surface Mount 2V @ 180µA 157 nC @ 10 V 60 V ±20V 5100 pF @ 30 V - - PG-TO263-3-2 - 250W (Tc) -55°C ~ 175°C (TJ)
IRF640L

IRF640L

MOSFET N-CH 200V 18A I2PAK

Vishay Siliconix

4,507 -
IRF640L

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 180mOhm @ 11A, 10V Through Hole 4V @ 250µA 70 nC @ 10 V 200 V ±20V 1300 pF @ 25 V - - I2PAK - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ)
MTP36N06V

MTP36N06V

MOSFET N-CH 60V 32A TO220AB

onsemi

5,718 -
MTP36N06V

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 32A (Tc) 10V 40mOhm @ 16A, 10V Through Hole 4V @ 250µA 50 nC @ 10 V 60 V ±20V 1700 pF @ 25 V - - TO-220 - 90W (Tc) -55°C ~ 175°C (TJ)
IRLR3303TR

IRLR3303TR

MOSFET N-CH 30V 35A DPAK

Infineon Technologies

5,070 -
IRLR3303TR

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 31mOhm @ 21A, 10V Surface Mount 1V @ 250µA 26 nC @ 4.5 V 30 V ±16V 870 pF @ 25 V - - TO-252AA (DPAK) - 68W (Tc) -55°C ~ 175°C (TJ)
PJP10NA80_T0_00001

PJP10NA80_T0_00001

800V N-CHANNEL MOSFET

Panjit International Inc.

6,194 -
PJP10NA80_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta) 10V 1.15Ohm @ 5A, 10V Through Hole 4V @ 250µA 31 nC @ 10 V 800 V ±30V 1517 pF @ 25 V - - TO-220AB - 180W (Tc) -55°C ~ 150°C (TJ)
PJP9NA90_T0_00001

PJP9NA90_T0_00001

900V N-CHANNEL MOSFET

Panjit International Inc.

5,762 -
PJP9NA90_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 9A (Ta) 10V 1.4Ohm @ 4.5A, 10V Through Hole 4V @ 250µA 31 nC @ 10 V 900 V ±30V 1634 pF @ 25 V - - TO-220AB - 205W (Tc) -55°C ~ 150°C (TJ)
HUFA75639S3S

HUFA75639S3S

MOSFET N-CH 100V 56A D2PAK

onsemi

8,227 -
HUFA75639S3S

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 25mOhm @ 56A, 10V Surface Mount 4V @ 250µA 130 nC @ 20 V 100 V ±20V 2000 pF @ 25 V AEC-Q101 - TO-263 (D2PAK) Automotive 200W (Tc) -55°C ~ 175°C (TJ)
HUFA75339S3S

HUFA75339S3S

MOSFET N-CH 55V 75A D2PAK

onsemi

5,849 -
HUFA75339S3S

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 12mOhm @ 75A, 10V Surface Mount 4V @ 250µA 130 nC @ 20 V 55 V ±20V 2000 pF @ 25 V - - TO-263 (D2PAK) - 200W (Tc) -55°C ~ 175°C (TJ)
HUFA76439S3S

HUFA76439S3S

MOSFET N-CH 60V 75A D2PAK

onsemi

2,565 -
HUFA76439S3S

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 12mOhm @ 75A, 10V Surface Mount 3V @ 250µA 84 nC @ 10 V 60 V ±16V 2745 pF @ 25 V - - TO-263 (D2PAK) - 155W (Tc) -55°C ~ 175°C (TJ)
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