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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TSM4NB60CI 600V, 4A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation	6,185	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	2.5Ohm @ 2A, 10V	Through Hole	4.5V @ 250µA	14.5 nC @ 10 V	600 V	±30V	500 pF @ 25 V	-	-	ITO-220	-	25W (Tc)	-55°C ~ 150°C (TJ)
SIHG085N60EF-GE3 EF SERIES POWER MOSFET WITH FAST Vishay Siliconix	942	-	询价单	数据表	EF	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	34A (Tc)	10V	84mOhm @ 17A, 10V	Through Hole	5V @ 250µA	63 nC @ 10 V	600 V	±30V	2733 pF @ 100 V	-	-	TO-247AC	-	184W (Tc)	-55°C ~ 150°C (TJ)
R6038YNX3C16 600V 38A TO-220AB, HIGH-SPEED SW Rohm Semiconductor	1,000	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	10V, 12V	96mOhm @ 9A, 12V	Through Hole	6V @ 2.5mA	50 nC @ 10 V	600 V	±30V	2350 pF @ 100 V	-	-	TO-220AB	-	348W (Tc)	150°C (TJ)
SIHG28N60EF-GE3 MOSFET N-CH 600V 28A TO247AC Vishay Siliconix	500	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	28A (Tc)	10V	123mOhm @ 14A, 10V	Through Hole	4V @ 250µA	120 nC @ 10 V	600 V	±30V	2714 pF @ 100 V	-	-	TO-247AC	-	250W (Tc)	-55°C ~ 150°C (TJ)
IRFP4768PBFXKMA1 TRENCH >=100V Infineon Technologies	388	-	询价单	数据表	HEXFET®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	93A (Tc)	10V	17.5mOhm @ 56A, 10V	Through Hole	5V @ 250µA	270 nC @ 10 V	250 V	±20V	10880 pF @ 50 V	-	-	PG-TO247-3-901	-	520W (Tc)	-55°C ~ 175°C (TJ)
AOTL66810Q LINEAR IC Alpha & Omega Semiconductor Inc.	1,813	-	询价单	数据表	AlphaSGT2™	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	63A (Ta), 445A (Tc)	8V, 10V	1.25mOhm @ 100A, 10V	Surface Mount	3.6V @ 250µA	245 nC @ 10 V	80 V	±20V	13000 pF @ 40 V	AEC-Q101	-	TOLLA	Automotive	10W (Ta), 500W (Tc)	-55°C ~ 175°C (TJ)
IMBG40R036M2HXTMA1 SIC-MOS Infineon Technologies	984	-	询价单	数据表	CoolSiC™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	7.6A (Ta), 50A (Tc)	15V, 18V	45.7mOhm @ 11.1A, 18V	Surface Mount	5.6V @ 4mA	26 nC @ 18 V	400 V	+23V, -7V	1170 pF @ 200 V	-	-	PG-TO263-7-11	-	3.8W (Ta), 167W (Tc)	-55°C ~ 175°C (TJ)
S2M0120120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	327	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	21A (Tc)	20V	150mOhm @ 13.3A, 20V	Surface Mount	4V @ 3.3mA	29.6 nC @ 20 V	1200 V	+20V, -5V	652 pF @ 1000 V	-	-	TO-263-7	-	153W (Tc)	-55°C ~ 175°C (TJ)
FDMT800152DC MOSFET N-CH 150V 8 DUAL COOL88 onsemi	2,694	-	询价单	数据表	Dual Cool™, PowerTrench®	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13A (Ta), 72A (Tc)	6V, 10V	9mOhm @ 13A, 10V	Surface Mount	4V @ 250µA	83 nC @ 10 V	150 V	±20V	5875 pF @ 75 V	-	-	8-Dual Cool™88	-	3.2W (Ta), 113W (Tc)	-55°C ~ 150°C (TJ)
IPTG029N13NM6ATMA1 TRENCH >=100V Infineon Technologies	1,800	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6049YNXC7G NCH 600V 22A, TO-220FM, POWER MO Rohm Semiconductor	975	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	22A (Tc)	10V, 12V	82mOhm @ 11A, 12V	Through Hole	6V @ 2.9mA	65 nC @ 10 V	600 V	±30V	2940 pF @ 100 V	-	-	TO-220FM	-	90W (Tc)	150°C (TJ)
NVHL082N65S3HF SUPERFER3 FRFET AUTOMOTIVE 82MOH onsemi	420	-	询价单	数据表	SuperFET® III, FRFET®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	10V	82mOhm @ 20A, 10V	Through Hole	5V @ 1mA	78 nC @ 10 V	650 V	±30V	3627 pF @ 400 V	-	-	TO-247-3	-	313W (Tc)	-55°C ~ 150°C (TJ)
IPT009N06NM5ATMA1 TRENCH 40<-<100V Infineon Technologies	1,990	-	询价单	数据表	OptiMOS™ 5	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	48A (Ta), 427A (Tc)	6V, 10V	0.9mOhm @ 150A, 10V	Surface Mount	3.3V @ 220µA	257 nC @ 10 V	60 V	±20V	16000 pF @ 30 V	-	-	PG-HSOF-8	-	3.8W (Ta), 300W (Tc)	-55°C ~ 175°C (TJ)
IMLT65R060M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	364	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS-065-011-2-L-MR GS-065-011-2-L-MR Infineon Technologies Canada Inc.	180	-	询价单	数据表	-	8-VDFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	6V	195mOhm @ 3.2A, 6V	Surface Mount	2.6V @ 2.4mA	2.2 nC @ 6 V	650 V	+7V, -10V	70 pF @ 400 V	-	-	8-PDFN (8x8)	-	-	-55°C ~ 150°C (TJ)
IPB65R075CFD7AATMA1 AUTOMOTIVE_COOLMOS PG-TO263-3 Infineon Technologies	826	-	询价单	数据表	CoolMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	32A (Tc)	10V	75mOhm @ 16.4A, 10V	Surface Mount	4.5V @ 820µA	68 nC @ 10 V	650 V	±20V	3288 pF @ 400 V	-	-	PG-TO263-3	-	171W (Tc)	-40°C ~ 150°C (TJ)
MCBS260N10YHE3-TP N-CHANNEL MOSFET,TO-263-7 Micro Commercial Co	1,600	-	询价单	数据表	-	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	260A (Tc)	10V	1.8mOhm @ 30A, 10V	Surface Mount	4V @ 250µA	161 nC @ 10 V	100 V	±20V	10589 pF @ 30 V	AEC-Q101	-	TO-263-7	Automotive	375W (Tj)	-55°C ~ 175°C (TJ)
IPT026N12NM6ATMA1 IPT026N12NM6ATMA1 Infineon Technologies	1,910	-	询价单	数据表	OptiMOS™ 6	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	23A (Ta), 224A (Tc)	8V, 10V	2.6mOhm @ 115A, 10V	Surface Mount	3.6V @ 169µA	88 nC @ 10 V	120 V	±20V	6500 pF @ 60 V	-	-	PG-HSOF-8-1	-	3W (Ta), 283W (Tc)	-55°C ~ 175°C (TJ)
IMZA75R090M1HXKSA1 SILICON CARBIDE MOSFET Infineon Technologies	218	-	询价单	数据表	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	23A (Tj)	15V, 20V	83mOhm @ 7.4A, 20V	Through Hole	5.6V @ 2.6mA	15 nC @ 18 V	750 V	+23V, -5V	542 pF @ 500 V	-	-	PG-TO247-4	-	113W (Tc)	-55°C ~ 175°C (TJ)
IPT65R060CFD7XTMA1 HIGH POWER_NEW Infineon Technologies	1,988	-	询价单	数据表	-	8-PowerSFN	Tape & Reel (TR)	Active	-	-	-	-	-	Surface Mount	-	-	650 V	-	-	-	-	PG-HSOF-8-3	-	-	-

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