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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
RX3L18BBGC16 NCH 60V 180A, TO-220AB, POWER MO Rohm Semiconductor	954	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	180A (Tc)	4.5V, 10V	1.84mOhm @ 90A, 10V	Through Hole	2.5V @ 1mA	160 nC @ 10 V	60 V	±20V	11000 pF @ 30 V	-	-	TO-220AB	-	192W (Tc)	150°C (TJ)
FCH190N65F-F155 MOSFET N-CH 650V 20.6A TO247 onsemi	387	-	询价单	数据表	FRFET®, SuperFET® II	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20.6A (Tc)	10V	190mOhm @ 10A, 10V	Through Hole	5V @ 2mA	78 nC @ 10 V	650 V	±20V	3225 pF @ 100 V	-	-	TO-247-3	-	208W (Tc)	-55°C ~ 150°C (TJ)
MSC090SMA070SCT/R MOSFET SIC 700 V 90 MOHM PSMT Microchip Technology	1,300	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MSC090SMA070SDT/R MOSFET SIC 700 V 90 MOHM TO-263- Microchip Technology	800	-	询价单	数据表	mSiC™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	34A (Tc)	18V, 20V	112mOhm @ 15A, 20V	Surface Mount	5V @ 750µA	41 nC @ 20 V	700 V	+23V, -10V	806 pF @ 700 V	-	-	TO-263-7	-	156W (Tc)	-55°C ~ 175°C (TJ)
TSM60NE084PW C0G 600V, 42A, SINGLE N-CHANNEL HIGH Taiwan Semiconductor Corporation	300	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	10V, 12V	80mOhm @ 14A, 12V	Through Hole	6V @ 2.9mA	68 nC @ 10 V	600 V	±30V	2939 pF @ 300 V	-	-	TO-247	-	357W (Tc)	-55°C ~ 150°C (TJ)
TP65H100G4LSGB-TR Hi Volt FETs Transphorm	2,960	-	询价单	数据表	SuperGaN®	8-VDFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	18.9A (Tc)	10V	110mOhm @ 12A, 10V	Surface Mount	4.1V @ 1.8mA	14.4 nC @ 10 V	650 V	±20V	818 pF @ 400 V	-	-	8-PQFN (8x8)	-	65.8W (Tc)	-55°C ~ 150°C (TJ)
R6027YNZ4C13 NCH 600V 27A, TO-247G, POWER MOS Rohm Semiconductor	597	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	27A (Tc)	10V, 12V	135mOhm @ 7A, 12V	Through Hole	6V @ 2mA	40 nC @ 10 V	600 V	±30V	1670 pF @ 100 V	-	-	TO-247G	-	245W (Tc)	150°C (TJ)
IPF129N20NM6ATMA1 IPF129N20NM6ATMA1 Infineon Technologies	864	-	询价单	数据表	OptiMOS™ 6	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	11A (Ta), 87A (Tc)	10V, 15V	12mOhm @ 65A, 15V	Surface Mount	4.5V @ 129µA	56 nC @ 10 V	200 V	±20V	3800 pF @ 100 V	-	-	PG-TO263-7-3	-	3.8W (Ta), 234W (Tc)	-55°C ~ 175°C (TJ)
AIMDQ75R090M1HXUMA1 AIMDQ75R090M1HXUMA1 Infineon Technologies	750	-	询价单	数据表	CoolSiC™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	24A (Tj)	15V, 20V	83mOhm @ 7.4A, 20V	Surface Mount	5.6V @ 2.6mA	15 nC @ 18 V	750 V	+23V, -5V	542 pF @ 500 V	AEC-Q101	-	PG-HDSOP-22	Automotive	128W (Tc)	-55°C ~ 175°C (TJ)
GS-065-011-1-L-MR GS-065-011-1-L-MR Infineon Technologies Canada Inc.	136	-	询价单	数据表	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	6V	190mOhm @ 3.2A, 6V	Surface Mount	2.6V @ 2.4mA	2.2 nC @ 6 V	650 V	+7V, -10V	70 pF @ 400 V	-	-	8-PDFN (5x6)	-	-	-55°C ~ 150°C (TJ)
IPDQ65R060CFD7AXTMA1 AUTOMOTIVE_COOLMOS Infineon Technologies	390	-	询价单	数据表	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	45A (Tc)	10V	60mOhm @ 16.4A, 10V	Surface Mount	4.5V @ 820µA	65 nC @ 10 V	650 V	±20V	3288 pF @ 400 V	AEC-Q101	-	PG-HDSOP-22-1	Automotive	272W (Tc)	-40°C ~ 150°C (TJ)
NTBL075N065SC1 M2 650V SIC MOSFET 75MOHM WITH T onsemi	1,979	-	询价单	数据表	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	37A (Tj)	15V, 18V	85mOhm @ 15A, 18V	Surface Mount	4.3V @ 5mA	59 nC @ 18 V	650 V	+22V, -8V	1191 pF @ 325 V	-	-	8-HPSOF	-	139W (Tj)	-55°C ~ 175°C (TJ)
NVB095N65S3F SF3 FRFET AUTO 95MOHM D2PAK-3 onsemi	1,533	-	询价单	数据表	SuperFET® III	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	36A (Tc)	10V	95mOhm @ 18A, 10V	Surface Mount	5V @ 860µA	66 nC @ 10 V	650 V	±30V	3020 pF @ 400 V	-	-	TO-263 (D2PAK)	-	272W (Tc)	-55°C ~ 150°C (TJ)
IPZ60R099P6FKSA1 MOSFET N-CH 600V 37.9A TO247-4 Infineon Technologies	188	-	询价单	数据表	CoolMOS™ P6	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	37.9A (Tc)	10V	99mOhm @ 14.5A, 10V	Through Hole	4.5V @ 1.21mA	70 nC @ 10 V	600 V	±20V	3330 pF @ 100 V	-	-	PG-TO247-4	-	278W (Tc)	-55°C ~ 150°C (TJ)
PJMH099N60EC_T0_00601 600V/ 99M / 39A/ EASY TO DRIVER Panjit International Inc.	1,500	-	询价单	数据表	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVBLS1D7N10MCTXG PTNG 100V STD TOLL onsemi	1,855	-	询价单	数据表	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	32.4A (Ta), 265A (Tc)	10V	1.8mOhm @ 80A, 10V	Surface Mount	4V @ 698µA	115 nC @ 10 V	100 V	±20V	9200 pF @ 50 V	AEC-Q101	-	8-HPSOF	Automotive	4.5W (Ta), 303W (Tc)	-55°C ~ 175°C (TJ)
STP7NB60 MOSFET N-CH 600V 7.2A TO220AB STMicroelectronics	6,247	-	询价单	数据表	PowerMESH™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	7.2A (Tc)	10V	1.2Ohm @ 3.6A, 10V	Through Hole	5V @ 250µA	45 nC @ 10 V	600 V	±30V	1625 pF @ 25 V	-	-	TO-220	-	125W (Tc)	150°C (TJ)
IRF740 MOSFET N-CH 400V 10A TO220AB STMicroelectronics	7,403	-	询价单	数据表	PowerMESH™ II	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	10A (Tc)	10V	550mOhm @ 5.3A, 10V	Through Hole	4V @ 250µA	43 nC @ 10 V	400 V	±20V	1400 pF @ 25 V	-	-	TO-220	-	125W (Tc)	-65°C ~ 150°C (TJ)
FQI12N60TU MOSFET N-CH 600V 10.5A I2PAK onsemi	8,273	-	询价单	数据表	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	10.5A (Tc)	10V	700mOhm @ 5.3A, 10V	Through Hole	5V @ 250µA	54 nC @ 10 V	600 V	±30V	1900 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.13W (Ta), 180W (Tc)	-55°C ~ 150°C (TJ)
SIHB4N80E-GE3 MOSFET N-CH 800V 4.3A D2PAK Vishay Siliconix	9,159	-	询价单	数据表	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4.3A (Tc)	10V	1.27Ohm @ 2A, 10V	Surface Mount	4V @ 250µA	32 nC @ 10 V	800 V	±30V	622 pF @ 100 V	-	-	TO-263 (D2PAK)	-	69W (Tc)	-55°C ~ 150°C (TJ)

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