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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
AOK8N80

AOK8N80

MOSFET N-CH 800V 7.4A TO247

Alpha & Omega Semiconductor Inc.

5,012 -
AOK8N80

数据表

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 7.4A (Tc) 10V 1.63Ohm @ 4A, 10V Through Hole 4.5V @ 250µA 32 nC @ 10 V 800 V ±30V 1650 pF @ 25 V - - TO-247 - 245W (Tc) -55°C ~ 150°C (TJ)
SIE860DF-T1-E3

SIE860DF-T1-E3

MOSFET N-CH 30V 60A 10POLARPAK

Vishay Siliconix

5,507 -
SIE860DF-T1-E3

数据表

TrenchFET® 10-PolarPAK® (M) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 2.1mOhm @ 21.7A, 10V Surface Mount 2.5V @ 250µA 105 nC @ 10 V 30 V ±20V 4500 pF @ 15 V - - 10-PolarPAK® (M) - 5.2W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
IRFR3706TRL

IRFR3706TRL

MOSFET N-CH 20V 75A DPAK

Infineon Technologies

2,502 -
IRFR3706TRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 2.8V, 10V 9mOhm @ 15A, 10V Surface Mount 2V @ 250µA 35 nC @ 4.5 V 20 V ±12V 2410 pF @ 10 V - - TO-252AA (DPAK) - 88W (Tc) -55°C ~ 175°C (TJ)
IRFP4310ZPBFXKMA1

IRFP4310ZPBFXKMA1

TRENCH >=100V

Infineon Technologies

9,988 -
IRFP4310ZPBFXKMA1

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 6mOhm @ 75A, 10V Through Hole 4V @ 1.037mA 170 nC @ 10 V 100 V ±20V 6860 pF @ 50 V - - PG-TO247-3-901 - 280W (Tc) -55°C ~ 175°C (TJ)
IRFR3711ZTR

IRFR3711ZTR

MOSFET N-CH 20V 93A DPAK

Infineon Technologies

8,434 -
IRFR3711ZTR

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 93A (Tc) 4.5V, 10V 5.7mOhm @ 15A, 10V Surface Mount 2.45V @ 250µA 27 nC @ 4.5 V 20 V ±20V 2160 pF @ 10 V - - TO-252AA (DPAK) - 79W (Tc) -55°C ~ 175°C (TJ)
AUIRF1018E

AUIRF1018E

MOSFET N-CH 60V 79A TO220AB

Infineon Technologies

2,206 -
AUIRF1018E

数据表

HEXFET® TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 79A (Tc) - 8.4mOhm @ 47A, 10V Through Hole 4V @ 100µA 69 nC @ 10 V 60 V - 2290 pF @ 50 V - - TO-220AB - 110W (Tc) -55°C ~ 175°C (TJ)
BSC027N03S G

BSC027N03S G

MOSFET N-CH 30V 25A/100A TDSON

Infineon Technologies

7,728 -
BSC027N03S G

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25A (Ta), 100A (Tc) 4.5V, 10V 2.7mOhm @ 50A, 10V Surface Mount 2V @ 90µA 51 nC @ 5 V 30 V ±20V 6540 pF @ 15 V - - PG-TDSON-8-1 - 2.8W (Ta), 89W (Tc) -55°C ~ 150°C (TJ)
IRF730SPBF

IRF730SPBF

MOSFET N-CH 400V 5.5A D2PAK

Vishay Siliconix

6,024 -
IRF730SPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V Surface Mount 4V @ 250µA 38 nC @ 10 V 400 V ±20V 700 pF @ 25 V - - TO-263 (D2PAK) - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ)
IRF830LPBF

IRF830LPBF

MOSFET N-CH 500V 4.5A TO262-3

Vishay Siliconix

4,937 -
IRF830LPBF

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V Through Hole 4V @ 250µA 38 nC @ 10 V 500 V ±20V 610 pF @ 25 V - - TO-262-3 - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ)
IRLR3303TRR

IRLR3303TRR

MOSFET N-CH 30V 35A DPAK

Infineon Technologies

4,611 -
IRLR3303TRR

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 31mOhm @ 21A, 10V Surface Mount 1V @ 250µA 26 nC @ 4.5 V 30 V ±16V 870 pF @ 25 V - - TO-252AA (DPAK) - 68W (Tc) -55°C ~ 175°C (TJ)
SIJH5100E-T1-GE3

SIJH5100E-T1-GE3

N-CHANNEL 100 V (D-S) 175C MOSFE

Vishay Siliconix

1,942 -
SIJH5100E-T1-GE3

数据表

TrenchFET® PowerPAK® 8 x 8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 28A (Ta), 277A (Tc) 7.5V, 10V 1.89mOhm @ 20A, 10V Surface Mount 4V @ 250µA 128 nC @ 10 V 100 V ±20V 6900 pF @ 50 V - - PowerPAK® 8 x 8 - 3.3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ)
IMTA65R060M2HXTMA1

IMTA65R060M2HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

367 -
IMTA65R060M2HXTMA1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IMT40R036M2HXTMA1

IMT40R036M2HXTMA1

SIC-MOS

Infineon Technologies

2,000 -
IMT40R036M2HXTMA1

数据表

CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 7.6A (Ta), 50A (Tc) 15V, 18V 45.7mOhm @ 11.1A, 18V Surface Mount 5.6V @ 4mA 26 nC @ 18 V 400 V +23V, -7V 1170 pF @ 200 V - - PG-HSOF-8-2 - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ)
FDH210N08

FDH210N08

MOSFET N-CH 75V TO247-3

onsemi

560 -
FDH210N08

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 210A (Tc) 10V - Through Hole - - 75 V ±20V - - - TO-247-3 - 462W (Tc) -55°C ~ 175°C (TJ)
AIMBG75R090M1HXTMA1

AIMBG75R090M1HXTMA1

AIMBG75R090M1HXTMA1

Infineon Technologies

980 -
AIMBG75R090M1HXTMA1

数据表

CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 24A (Tj) 15V, 20V 83mOhm @ 7.4A, 20V Surface Mount 5.6V @ 2.6mA 15 nC @ 18 V 750 V +23V, -5V 542 pF @ 500 V AEC-Q101 - PG-TO263-7 Automotive 128W (Tc) -55°C ~ 175°C (TJ)
NTMTS0D4N04CTXG

NTMTS0D4N04CTXG

MOSFET N-CH 40V 79.8A/558A 8DFNW

onsemi

2,889 -
NTMTS0D4N04CTXG

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 79.8A (Ta), 558A (Tc) 10V 0.45mOhm @ 50A, 10V Surface Mount 4V @ 250µA 251 nC @ 10 V 40 V ±20V 16500 pF @ 20 V - - 8-DFNW (8.3x8.4) - 5W (Ta), 244W (Tc) -55°C ~ 175°C (TJ)
NTMTSC4D2N10GTXG

NTMTSC4D2N10GTXG

100V MVSOA IN DFNW8(PQFN8X8) PAC

onsemi

2,670 -
NTMTSC4D2N10GTXG

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 21A (Ta), 178A (Tc) 10V 4.2mOhm @ 88A, 10V Surface Mount, Wettable Flank 4V @ 450µA 159 nC @ 10 V 100 V ±20V 10450 pF @ 50 V - - 8-TDFNW (8.3x8.4) - 3.9W (Ta), 267W (Tc) -55°C ~ 175°C (TJ)
R6024ENZ4C13

R6024ENZ4C13

MOSFET N-CH 600V 24A TO247

Rohm Semiconductor

594 -
R6024ENZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V, 15V 165mOhm @ 24A, 15V Through Hole - 70 nC @ 15 V 600 V ±20V - - - TO-247 - 245W (Tc) -
SIHH125N60EF-T1GE3

SIHH125N60EF-T1GE3

MOSFET N-CH 600V 23A PPAK 8 X 8

Vishay Siliconix

3,000 -
SIHH125N60EF-T1GE3

数据表

EF 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 23A (Tc) 10V 125mOhm @ 12A, 10V Surface Mount 5V @ 250µA 47 nC @ 10 V 600 V ±30V 1533 pF @ 100 V - - PowerPAK® 8 x 8 - 156W (Tc) -55°C ~ 150°C (TJ)
AOTL66810

AOTL66810

DESC: MOSFET N-CH 80V 65A TOLLA

Alpha & Omega Semiconductor Inc.

1,790 -
AOTL66810

数据表

AlphaSGT™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 65A (Ta), 420A (Tc) 8V, 10V 1.25mOhm @ 20A, 10V Surface Mount 3.6V @ 250µA 245 nC @ 10 V 80 V ±20V 13000 pF @ 40 V - - TOLLA - 10W (Ta), 425W (Tc) -55°C ~ 175°C (TJ)
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