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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPW95R130PFD7XKSA1 HIGH POWER_NEW Infineon Technologies	314	-	询价单	数据表	CoolMOS™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	36.5A	10V	-	Through Hole	-	141 nC @ 10 V	950 V	±20V	-	-	-	PG-TO247-3-41	-	227W	-55°C ~ 150°C
NTMTS002N08MC PTNG 80V IN CEBU PQFN88 onsemi	2,948	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	29A (Ta), 229A (Tc)	6V, 10V	2mOhm @ 90A, 10V	Surface Mount	4V @ 540µA	125 nC @ 10 V	80 V	±20V	8900 pF @ 40 V	-	-	8-DFNW (8.3x8.4)	-	3.3W (Ta)	-55°C ~ 150°C (TJ)
STW18NM60N MOSFET N-CH 600V 13A TO247-3 STMicroelectronics	534	-	询价单	数据表	MDmesh™ II	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	285mOhm @ 6.5A, 10V	Through Hole	4V @ 250µA	35 nC @ 10 V	600 V	±25V	1000 pF @ 50 V	-	-	TO-247-3	-	110W (Tc)	-55°C ~ 150°C (TJ)
GS-065-011-6-LR-MR GS-065-011-6-LR-MR Infineon Technologies Canada Inc.	235	-	询价单	数据表	-	8-VDFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	12.2A (Tc)	6V	180mOhm @ 3.2A, 6V	Surface Mount	2.6V @ 2.4mA	2.2 nC @ 6 V	700 V	+7V, -10V	70 pF @ 400 V	-	-	8-PDFN (8x8)	-	-	-55°C ~ 150°C (TJ)
GS-065-011-6-L-MR GS-065-011-6-L-MR Infineon Technologies Canada Inc.	227	-	询价单	数据表	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	12.2A (Tc)	6V	180mOhm @ 3.2A, 6V	Surface Mount	2.6V @ 2.4mA	2.2 nC @ 6 V	700 V	+7V, -10V	70 pF @ 400 V	-	-	8-PDFN (5x6)	-	-	-55°C ~ 150°C (TJ)
TPCC8006-H(TE12LQM MOSFET N-CH 30V 22A 8TSON Toshiba Semiconductor and Storage	8,322	-	询价单	数据表	U-MOSVI-H	8-VDFN Exposed Pad	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	22A (Ta)	4.5V, 10V	8mOhm @ 11A, 10V	Surface Mount	2.3V @ 200µA	27 nC @ 10 V	30 V	±20V	2200 pF @ 10 V	-	-	8-TSON Advance (3.3x3.3)	-	700mW (Ta), 27W (Tc)	150°C (TJ)
TPCC8A01-H(TE12LQM MOSFET N-CH 30V 21A 8TSON Toshiba Semiconductor and Storage	3,442	-	询价单	数据表	U-MOSV-H	8-VDFN Exposed Pad	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	21A (Ta)	4.5V, 10V	9.9mOhm @ 10.5A, 10V	Surface Mount	2.3V @ 1mA	20 nC @ 10 V	30 V	±20V	1900 pF @ 10 V	-	-	8-TSON Advance (3.3x3.3)	-	700mW (Ta), 30W (Tc)	150°C (TJ)
FDFME2P823ZT MOSFET P-CH 20V 2.6A 6MICROFET onsemi	6,246	-	询价单	数据表	PowerTrench®	6-UFDFN Exposed Pad	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	2.6A (Ta)	1.8V, 4.5V	142mOhm @ 2.3A, 4.5V	Surface Mount	1V @ 250µA	7.7 nC @ 4.5 V	20 V	±8V	405 pF @ 10 V	-	Schottky Diode (Isolated)	6-MicroFET (1.6x1.6)	-	1.4W (Ta)	-55°C ~ 150°C (TJ)
RSD046P05TL MOSFET P-CH 45V 4.5A CPT3 Rohm Semiconductor	2,906	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Last Time Buy	P-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	4V, 10V	155mOhm @ 4.5A, 10V	Surface Mount	3V @ 1mA	12 nC @ 5 V	45 V	±20V	550 pF @ 10 V	-	-	CPT3	-	850mW (Ta), 15W (Tc)	150°C (TJ)
AO4292E MOSFET N-CH 100V 8A 8SOIC Alpha & Omega Semiconductor Inc.	9,790	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	-	-	8A (Ta)	-	-	Surface Mount	-	-	-	-	-	-	-	8-SOIC	-	-	-
AONS66405T LINEAR IC Alpha & Omega Semiconductor Inc.	6,233	-	询价单	数据表	AlphaSGT™	8-PowerSMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	70A (Ta), 385A (Tc)	8V, 10V	0.95mOhm @ 20A, 10V	Surface Mount	3.4V @ 250µA	165 nC @ 10 V	40 V	±20V	9700 pF @ 20 V	-	-	8-DFN (5x6)	-	8.8W (Ta), 258W (Tc)	-55°C ~ 175°C (TJ)
SPI47N10 MOSFET N-CH 100V 47A TO262-3 Infineon Technologies	7,796	-	询价单	数据表	SIPMOS®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	47A (Tc)	10V	33mOhm @ 33A, 10V	Through Hole	4V @ 2mA	105 nC @ 10 V	100 V	±20V	2500 pF @ 25 V	-	-	PG-TO262-3-1	-	175W (Tc)	-55°C ~ 175°C (TJ)
SPI47N10L MOSFET N-CH 100V 47A TO262-3 Infineon Technologies	2,280	-	询价单	数据表	SIPMOS®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	47A (Tc)	4.5V, 10V	26mOhm @ 33A, 10V	Through Hole	2V @ 2mA	135 nC @ 10 V	100 V	±20V	2500 pF @ 25 V	-	-	PG-TO262-3-1	-	175W (Tc)	-55°C ~ 175°C (TJ)
SPP47N10 MOSFET N-CH 100V 47A TO220-3 Infineon Technologies	2,011	-	询价单	数据表	SIPMOS®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	47A (Tc)	10V	33mOhm @ 33A, 10V	Through Hole	4V @ 2mA	105 nC @ 10 V	100 V	±20V	2500 pF @ 25 V	-	-	PG-TO220-3-1	-	175W (Tc)	-55°C ~ 175°C (TJ)
IRF3711ZCSTRL MOSFET N-CH 20V 92A D2PAK Infineon Technologies	9,219	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	92A (Tc)	4.5V, 10V	6mOhm @ 15A, 10V	Surface Mount	2.45V @ 250µA	24 nC @ 4.5 V	20 V	±20V	2150 pF @ 10 V	-	-	D2PAK	-	79W (Tc)	-55°C ~ 175°C (TJ)
IRFR3711ZTRL MOSFET N-CH 20V 93A DPAK Infineon Technologies	6,062	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	93A (Tc)	4.5V, 10V	5.7mOhm @ 15A, 10V	Surface Mount	2.45V @ 250µA	27 nC @ 4.5 V	20 V	±20V	2160 pF @ 10 V	-	-	TO-252AA (DPAK)	-	79W (Tc)	-55°C ~ 175°C (TJ)
IRFR3711ZTRR MOSFET N-CH 20V 93A DPAK Infineon Technologies	8,652	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	93A (Tc)	4.5V, 10V	5.7mOhm @ 15A, 10V	Surface Mount	2.45V @ 250µA	27 nC @ 4.5 V	20 V	±20V	2160 pF @ 10 V	-	-	TO-252AA (DPAK)	-	79W (Tc)	-55°C ~ 175°C (TJ)
IAUC120N04S6N008ATMA1 MOSFET_(20V 40V) Infineon Technologies	7,074	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	43A (Ta)	7V, 10V	0.8mOhm @ 60A, 10V	Surface Mount	3V @ 90µA	110 nC @ 10 V	40 V	±20V	7150 pF @ 25 V	AEC-Q101	-	PG-TDSON-8-43	Automotive	150W (Tc)	-55°C ~ 175°C (TJ)
SUM90N08-7M6P-E3 MOSFET N-CH 75V 90A TO263 Vishay Siliconix	7,414	-	询价单	数据表	TrenchFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	10V	7.6mOhm @ 30A, 10V	Surface Mount	4.8V @ 250µA	90 nC @ 10 V	75 V	±20V	3528 pF @ 30 V	-	-	TO-263 (D2PAK)	-	3.75W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)
IXTY44N10T-TRL MOSFET N-CH 100V 44A TO252 Littelfuse Inc.	5,851	-	询价单	数据表	Trench	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	44A (Tc)	10V	30mOhm @ 22A, 10V	Surface Mount	4.5V @ 25µA	33 nC @ 10 V	100 V	±30V	1262 pF @ 25 V	-	-	TO-252AA	-	130W (Tc)	-55°C ~ 175°C (TJ)

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