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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IAUTN06S5N008GATMA1

IAUTN06S5N008GATMA1

MOSFET_)40V 60V)

Infineon Technologies

1,690 -
IAUTN06S5N008GATMA1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SUM70042M-GE3

SUM70042M-GE3

N-CHANNEL 100 V (D-S) MOSFET D2P

Vishay Siliconix

780 -
SUM70042M-GE3

数据表

TrenchFET® TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150A (Tc) 7.5V, 10V 3.83mOhm @ 20A, 10V Surface Mount 3.8V @ 250µA 126 nC @ 10 V 100 V ±20V 6750 pF @ 50 V - - TO-263-7 - 375W (Tc) -55°C ~ 175°C (TJ)
IXFH16N50P3

IXFH16N50P3

MOSFET N-CH 500V 16A TO247AD

Littelfuse Inc.

290 -
IXFH16N50P3

数据表

HiPerFET™, Polar3™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 360mOhm @ 8A, 10V Through Hole 5V @ 2.5mA 29 nC @ 10 V 500 V ±30V 1515 pF @ 25 V - - TO-247AD (IXFH) - 330W (Tc) -55°C ~ 150°C (TJ)
TK16G60W,RVQ

TK16G60W,RVQ

MOSFET N CH 600V 15.8A D2PAK

Toshiba Semiconductor and Storage

984 -
TK16G60W,RVQ

数据表

DTMOSIV TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V Surface Mount 3.7V @ 790µA 38 nC @ 10 V 600 V ±30V 1350 pF @ 300 V - - D2PAK - 130W (Tc) 150°C (TJ)
STW35N65DM2

STW35N65DM2

MOSFET N-CH 650V 32A TO247

STMicroelectronics

816 -
STW35N65DM2

数据表

MDmesh™ DM2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 32A (Tc) 10V 110mOhm @ 16A, 10V Through Hole 5V @ 250µA 56.3 nC @ 10 V 650 V ±25V 2540 pF @ 100 V - - TO-247-3 - 250W (Tc) -55°C ~ 150°C (TJ)
NVHL095N65S3F

NVHL095N65S3F

SF3 FRFET AUTO 95MOHM TO-247

onsemi

418 -
NVHL095N65S3F

数据表

SuperFET® III, FRFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 36A (Tc) 10V 95mOhm @ 18A, 10V Through Hole 5V @ 860µA 66 nC @ 10 V 650 V ±30V 3020 pF @ 400 V - - TO-247-3 - 272W (Tc) -55°C ~ 150°C (TJ)
SIHB24N65E-GE3

SIHB24N65E-GE3

MOSFET N-CH 650V 24A D2PAK

Vishay Siliconix

1,868 -
SIHB24N65E-GE3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 145mOhm @ 12A, 10V Surface Mount 4V @ 250µA 122 nC @ 10 V 650 V ±30V 2740 pF @ 100 V - - TO-263 (D2PAK) - 250W (Tc) -55°C ~ 150°C (TJ)
IPTG018N10NM5ATMA1

IPTG018N10NM5ATMA1

TRENCH >=100V PG-HSOG-8

Infineon Technologies

1,700 -
IPTG018N10NM5ATMA1

数据表

OptiMOS™ 8-PowerSMD, Gull Wing Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 32A (Ta), 273A Tc) 6V, 10V 1.8mOhm @ 150A, 10V Surface Mount 3.8V @ 202µA 152 nC @ 10 V 100 V ±20V 11000 pF @ 50 V - - PG-HSOG-8-1 - 3.8W (Ta), 273W (Tc) -55°C ~ 175°C (TJ)
NVHL095N65S3HF

NVHL095N65S3HF

SUPERFER3 FRFET AUTOMOTIVE 95MOH

onsemi

450 -
NVHL095N65S3HF

数据表

SuperFET® III, FRFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 36A (Tc) 10V 95mOhm @ 18A, 10V Through Hole 5V @ 860µA 66 nC @ 10 V 650 V ±30V 3105 pF @ 400 V - - TO-247-3 - 272W (Tc) -55°C ~ 150°C (TJ)
IPB65R110CFDATMA2

IPB65R110CFDATMA2

MOSFET N-CH 650V 31.2A TO263-3

Infineon Technologies

1,960 -
IPB65R110CFDATMA2

数据表

CoolMOS™ CFD2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V Surface Mount 4.5V @ 1.3mA 118 nC @ 10 V 650 V ±20V 3240 pF @ 100 V - - PG-TO263-3 - 277.8W (Tc) -55°C ~ 150°C (TJ)
SIHP085N60EF-GE3

SIHP085N60EF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

1,995 -
SIHP085N60EF-GE3

数据表

EF TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 34A (Tc) 10V 84mOhm @ 17A, 10V Through Hole 5V @ 250µA 63 nC @ 10 V 600 V ±30V 2733 pF @ 100 V - - TO-220AB - 184W (Tc) -55°C ~ 150°C (TJ)
IMWH170R450M1XKSA1

IMWH170R450M1XKSA1

IMWH170R450M1XKSA1

Infineon Technologies

252 -
IMWH170R450M1XKSA1

数据表

CoolSiC™ TO-247-3 Tray Active N-Channel SiCFET (Silicon Carbide) 10A (Tj) 12V, 15V 390mOhm @ 2A, 15V Through Hole 5.7V @ 2.6mA 11.7 nC @ 12 V 1700 V 15V, 12V 506 pF @ 1000 V - - PG-TO247-3-U04 - 111W (Tc) -55°C ~ 175°C (TJ)
SIHF30N60E-GE3

SIHF30N60E-GE3

MOSFET N-CH 600V 29A TO220

Vishay Siliconix

2,975 -
SIHF30N60E-GE3

数据表

E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 29A (Tc) 10V 125mOhm @ 15A, 10V Through Hole 4V @ 250µA 130 nC @ 10 V 600 V ±30V 2600 pF @ 100 V - - - - 37W (Tc) -55°C ~ 150°C (TJ)
MCBS260N10Y-TP

MCBS260N10Y-TP

N-CHANNEL MOSFET,TO-263-7

Micro Commercial Co

1,508 -
MCBS260N10Y-TP

数据表

- TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Active N-Channel MOSFET (Metal Oxide) 260A (Tc) 10V 1.8mOhm @ 30A, 10V Surface Mount 4V @ 250µA 161 nC @ 10 V 100 V ±20V 10589 pF @ 25 V - - TO-263-7 - 375W (Tj) -55°C ~ 175°C (TJ)
SIHG24N65E-GE3

SIHG24N65E-GE3

MOSFET N-CH 650V 24A TO247AC

Vishay Siliconix

610 -
SIHG24N65E-GE3

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 145mOhm @ 12A, 10V Through Hole 4V @ 250µA 122 nC @ 10 V 650 V ±30V 2740 pF @ 100 V - - TO-247AC - 250W (Tc) -55°C ~ 150°C (TJ)
CDF56G7032N TR13 PBFREE

CDF56G7032N TR13 PBFREE

SURFACE MOUNT MOSFET

Central Semiconductor Corp

2,500 -
CDF56G7032N TR13 PBFREE

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 6V 140mOhm @ 5A, 6V Surface Mount, Wettable Flank 2.5V @ 17.2mA 3.5 nC @ 6 V 700 V +7V, -6V 125 pF @ 400 V - - 8-DFN (5x6) - 1.1W (Ta), 113W (Tc) -55°C ~ 155°C (TJ)
TK095N65Z5,S1F(S

TK095N65Z5,S1F(S

650V DTMOS6-HIGH SPEED DIODE

Toshiba Semiconductor and Storage

195 -
TK095N65Z5,S1F(S

数据表

DTMOSVI TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 29A (Ta) 10V 95mOhm @ 14.5A, 10V Through Hole 4.5V @ 1.27mA 50 nC @ 10 V 650 V ±30V 2880 pF @ 300 V - - TO-247 - 230W (Tc) 150°C
XP10NA1R5TL

XP10NA1R5TL

MOSFET N-CH 100V 300A TOLL

YAGEO XSEMI

987 -
XP10NA1R5TL

数据表

XP10NA1R5 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 300A (Tc) 10V 1.5mOhm @ 100A, 10V Surface Mount 4V @ 250µA 304 nC @ 10 V 100 V ±20V 16960 pF @ 80 V - - TOLL - 3.75W (Ta), 333W (Tc) -55°C ~ 175°C (TJ)
MSC180SMA120SDT/R

MSC180SMA120SDT/R

MOSFET SIC 1200 V 180 MOHM TO-26

Microchip Technology

773 -
MSC180SMA120SDT/R

数据表

mSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 21A (Tc) 18V, 20V 225mOhm @ 8A, 20V Surface Mount 5V @ 500µA 36 nC @ 20 V 1200 V +23V, -10V 481 pF @ 1.2 kV - - TO-263-7 - 146W (Tc) -55°C ~ 175°C (TJ)
SIHF085N60EF-GE3

SIHF085N60EF-GE3

EF SERIES POWER MOSFET TO-220 FU

Vishay Siliconix

1,000 -
SIHF085N60EF-GE3

数据表

EF TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 84mOhm @ 17A, 10V Through Hole 5V @ 250µA 63 nC @ 10 V 600 V ±30V 2733 pF @ 100 V - - TO-220 Full Pack - 35W (Tc) -55°C ~ 150°C (TJ)
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