24小时咨询热线
0755 83957878
场效应晶体管(FETs)、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PJMF105N60FRC_T0_00601600V/ 105M / 35A/ SJ MOSFET WITH |
2,000 | - |
|
数据表 |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
PJMP105N60FRC_T0_00601600V/ 105M / 35A/ SJ MOSFET WITH |
2,000 | - |
|
数据表 |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IXFP4N60P3MOSFET N-CH 600V 4A TO220AB |
9,157 | - |
|
数据表 |
HiPerFET™, Polar3™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 10V | 2.2Ohm @ 2A, 10V | Through Hole | 5V @ 250µA | 6.9 nC @ 10 V | 600 V | ±30V | 365 pF @ 25 V | - | - | TO-220-3 | - | 114W (Tc) | -55°C ~ 150°C (TJ) |
|
R6027YNXC7GNCH 600V 14A, TO-220FM, POWER MO |
1,000 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 14A (Tc) | 10V, 12V | 135mOhm @ 7A, 12V | Through Hole | 6V @ 2mA | 40 nC @ 10 V | 600 V | ±30V | 1670 pF @ 100 V | - | - | TO-220FM | - | 70W (Tc) | 150°C (TJ) |
|
IRF7524D1TRMOSFET P-CH 20V 1.7A MICRO8 |
6,380 | - |
|
数据表 |
FETKY™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 1.7A (Ta) | 2.7V, 4.5V | 270mOhm @ 1.2A, 4.5V | Surface Mount | 700mV @ 250µA (Min) | 8.2 nC @ 4.5 V | 20 V | ±12V | 240 pF @ 15 V | - | Schottky Diode (Isolated) | Micro8™ | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) |
|
IPB90R340C3ATMA2MOSFET N-CH 900V 15A TO263-3 |
1,783 | - |
|
数据表 |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 10V | 340mOhm @ 9.2A, 10V | Surface Mount | 3.5V @ 1mA | 94 nC @ 10 V | 900 V | ±20V | 2400 pF @ 100 V | - | - | PG-TO263-3-2 | - | 208W (Tc) | -55°C ~ 150°C (TJ) |
|
PHP14NQ20T,127MOSFET N-CH 200V 14A TO220AB |
2,429 | - |
|
数据表 |
TrenchMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 14A (Tc) | 10V | 230mOhm @ 7A, 10V | Through Hole | 4V @ 1mA | 38 nC @ 10 V | 200 V | ±20V | 1500 pF @ 25 V | - | - | TO-220AB | - | 125W (Tc) | -55°C ~ 175°C (TJ) |
|
IPDQ65R080CFD7XTMA1HIGH POWER_NEW |
750 | - |
|
数据表 |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 36A (Tc) | 10V | 80mOhm @ 12.5A, 10V | Surface Mount | 4.5V @ 630µA | 50 nC @ 10 V | 650 V | ±20V | 2513 pF @ 400 V | - | - | PG-HDSOP-22-1 | - | 223W (Tc) | -55°C ~ 150°C (TJ) |
|
IPP070N06L GMOSFET N-CH 60V 80A TO220-3 |
7,007 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 4.5V, 10V | 7mOhm @ 80A, 10V | Through Hole | 2V @ 150µA | 126 nC @ 10 V | 60 V | ±20V | 4300 pF @ 30 V | - | - | PG-TO220-3 | - | 214W (Tc) | -55°C ~ 175°C (TJ) |
|
S2M0160120JMOSFET SILICON CARBIDE SIC 1200V |
300 | - |
|
数据表 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 16A (Tc) | 20V | 196mOhm @ 10A, 20V | Surface Mount | 4V @ 2.5mA | 26.5 nC @ 20 V | 1200 V | +20V, -5V | 513 pF @ 1000 V | - | - | TO-263-7 | - | 122W (Tc) | -55°C ~ 175°C (TJ) |
|
IRLZ34NSTRRMOSFET N-CH 55V 30A D2PAK |
9,750 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4V, 10V | 35mOhm @ 16A, 10V | Surface Mount | 2V @ 250µA | 25 nC @ 5 V | 55 V | ±16V | 880 pF @ 25 V | - | - | D2PAK | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) |
|
TSM60N900CI C0GMOSFET N-CH 600V 4.5A ITO220AB |
9,726 | - |
|
数据表 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.5A (Tc) | 10V | 900mOhm @ 2.3A, 10V | Through Hole | 4V @ 250µA | 9.7 nC @ 10 V | 600 V | ±30V | 480 pF @ 100 V | - | - | ITO-220AB | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
TSM70N900CI C0GMOSFET N-CH 700V 4.5A ITO220AB |
9,382 | - |
|
数据表 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.5A (Tc) | 10V | 900mOhm @ 1.5A, 10V | Through Hole | 4V @ 250µA | 9.7 nC @ 10 V | 700 V | ±30V | 482 pF @ 100 V | - | - | ITO-220AB | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
TSM3401CX RFGMOSFET P-CHANNEL 30V 3A SOT23 |
15 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 3A (Ta) | 4.5V, 10V | 60mOhm @ 3A, 10V | Surface Mount | 3V @ 250µA | 2.7 nC @ 10 V | 30 V | ±20V | 551.57 pF @ 15 V | - | - | SOT-23 | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) |
|
IRF7468TRPBFMOSFET N-CH 40V 9.4A 8SO |
7,734 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9.4A (Ta) | 4.5V, 10V | 15.5mOhm @ 9.4A, 10V | Surface Mount | 2V @ 250µA | 34 nC @ 4.5 V | 40 V | ±12V | 2460 pF @ 20 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
STT2PF60LMOSFET P-CH 60V 2A SOT23-6 |
8,524 | - |
|
数据表 |
STripFET™ II | SOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2A (Tc) | 4.5V, 10V | 250mOhm @ 1A, 10V | Surface Mount | 1V @ 250µA | 7 nC @ 10 V | 60 V | ±15V | 313 pF @ 25 V | - | - | SOT-23-6 | - | 1.6W (Tc) | 150°C (TJ) |
|
BSP030,115MOSFET N-CH 30V 10A SOT223 |
9,417 | - |
|
数据表 |
TrenchMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 4.5V, 10V | 30mOhm @ 5A, 10V | Surface Mount | 2.8V @ 1mA | 40 nC @ 10 V | 30 V | ±20V | 770 pF @ 24 V | - | - | SOT-223 | - | 8.3W (Tc) | -65°C ~ 150°C (TJ) |
|
SI7411DN-T1-E3MOSFET P-CH 20V 7.5A PPAK1212-8 |
3,514 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 7.5A (Ta) | 1.8V, 4.5V | 19mOhm @ 11.4A, 4.5V | Surface Mount | 1V @ 300µA | 41 nC @ 4.5 V | 20 V | ±8V | - | - | - | PowerPAK® 1212-8 | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) |
|
IRF7467TRPBFMOSFET N-CH 30V 11A 8SO |
3,319 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11A (Ta) | 2.8V, 10V | 12mOhm @ 11A, 10V | Surface Mount | 2V @ 250µA | 32 nC @ 4.5 V | 30 V | ±12V | 2530 pF @ 15 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
TPCC8005-H(TE12LQMMOSFET N-CH 30V 26A 8TSON |
4,056 | - |
|
数据表 |
U-MOSVI-H | 8-VDFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 26A (Ta) | 4.5V, 10V | 6.4mOhm @ 13A, 10V | Surface Mount | 2.3V @ 500µA | 35 nC @ 10 V | 30 V | ±20V | 2900 pF @ 10 V | - | - | 8-TSON Advance (3.3x3.3) | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) |
