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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PJMF105N60FRC_T0_00601

PJMF105N60FRC_T0_00601

600V/ 105M / 35A/ SJ MOSFET WITH

Panjit International Inc.

2,000 -
PJMF105N60FRC_T0_00601

数据表

- - Tube Active - - - - - - - - - - - - - - - - -
PJMP105N60FRC_T0_00601

PJMP105N60FRC_T0_00601

600V/ 105M / 35A/ SJ MOSFET WITH

Panjit International Inc.

2,000 -
PJMP105N60FRC_T0_00601

数据表

- - Tube Active - - - - - - - - - - - - - - - - -
IXFP4N60P3

IXFP4N60P3

MOSFET N-CH 600V 4A TO220AB

IXYS

9,157 -
IXFP4N60P3

数据表

HiPerFET™, Polar3™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 2.2Ohm @ 2A, 10V Through Hole 5V @ 250µA 6.9 nC @ 10 V 600 V ±30V 365 pF @ 25 V - - TO-220-3 - 114W (Tc) -55°C ~ 150°C (TJ)
R6027YNXC7G

R6027YNXC7G

NCH 600V 14A, TO-220FM, POWER MO

Rohm Semiconductor

1,000 -
R6027YNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V, 12V 135mOhm @ 7A, 12V Through Hole 6V @ 2mA 40 nC @ 10 V 600 V ±30V 1670 pF @ 100 V - - TO-220FM - 70W (Tc) 150°C (TJ)
IRF7524D1TR

IRF7524D1TR

MOSFET P-CH 20V 1.7A MICRO8

Infineon Technologies

6,380 -
IRF7524D1TR

数据表

FETKY™ 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.7A (Ta) 2.7V, 4.5V 270mOhm @ 1.2A, 4.5V Surface Mount 700mV @ 250µA (Min) 8.2 nC @ 4.5 V 20 V ±12V 240 pF @ 15 V - Schottky Diode (Isolated) Micro8™ - 1.25W (Ta) -55°C ~ 150°C (TJ)
IPB90R340C3ATMA2

IPB90R340C3ATMA2

MOSFET N-CH 900V 15A TO263-3

Infineon Technologies

1,783 -
IPB90R340C3ATMA2

数据表

CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 340mOhm @ 9.2A, 10V Surface Mount 3.5V @ 1mA 94 nC @ 10 V 900 V ±20V 2400 pF @ 100 V - - PG-TO263-3-2 - 208W (Tc) -55°C ~ 150°C (TJ)
PHP14NQ20T,127

PHP14NQ20T,127

MOSFET N-CH 200V 14A TO220AB

NXP USA Inc.

2,429 -
PHP14NQ20T,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 230mOhm @ 7A, 10V Through Hole 4V @ 1mA 38 nC @ 10 V 200 V ±20V 1500 pF @ 25 V - - TO-220AB - 125W (Tc) -55°C ~ 175°C (TJ)
IPDQ65R080CFD7XTMA1

IPDQ65R080CFD7XTMA1

HIGH POWER_NEW

Infineon Technologies

750 -
IPDQ65R080CFD7XTMA1

数据表

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 36A (Tc) 10V 80mOhm @ 12.5A, 10V Surface Mount 4.5V @ 630µA 50 nC @ 10 V 650 V ±20V 2513 pF @ 400 V - - PG-HDSOP-22-1 - 223W (Tc) -55°C ~ 150°C (TJ)
IPP070N06L G

IPP070N06L G

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies

7,007 -
IPP070N06L G

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 7mOhm @ 80A, 10V Through Hole 2V @ 150µA 126 nC @ 10 V 60 V ±20V 4300 pF @ 30 V - - PG-TO220-3 - 214W (Tc) -55°C ~ 175°C (TJ)
S2M0160120J

S2M0160120J

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

300 -
S2M0160120J

数据表

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiCFET (Silicon Carbide) 16A (Tc) 20V 196mOhm @ 10A, 20V Surface Mount 4V @ 2.5mA 26.5 nC @ 20 V 1200 V +20V, -5V 513 pF @ 1000 V - - TO-263-7 - 122W (Tc) -55°C ~ 175°C (TJ)
IRLZ34NSTRR

IRLZ34NSTRR

MOSFET N-CH 55V 30A D2PAK

Infineon Technologies

9,750 -
IRLZ34NSTRR

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 4V, 10V 35mOhm @ 16A, 10V Surface Mount 2V @ 250µA 25 nC @ 5 V 55 V ±16V 880 pF @ 25 V - - D2PAK - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ)
TSM60N900CI C0G

TSM60N900CI C0G

MOSFET N-CH 600V 4.5A ITO220AB

Taiwan Semiconductor Corporation

9,726 -
TSM60N900CI C0G

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 900mOhm @ 2.3A, 10V Through Hole 4V @ 250µA 9.7 nC @ 10 V 600 V ±30V 480 pF @ 100 V - - ITO-220AB - 50W (Tc) -55°C ~ 150°C (TJ)
TSM70N900CI C0G

TSM70N900CI C0G

MOSFET N-CH 700V 4.5A ITO220AB

Taiwan Semiconductor Corporation

9,382 -
TSM70N900CI C0G

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 900mOhm @ 1.5A, 10V Through Hole 4V @ 250µA 9.7 nC @ 10 V 700 V ±30V 482 pF @ 100 V - - ITO-220AB - 50W (Tc) -55°C ~ 150°C (TJ)
TSM3401CX RFG

TSM3401CX RFG

MOSFET P-CHANNEL 30V 3A SOT23

Taiwan Semiconductor Corporation

15 -
TSM3401CX RFG

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3A (Ta) 4.5V, 10V 60mOhm @ 3A, 10V Surface Mount 3V @ 250µA 2.7 nC @ 10 V 30 V ±20V 551.57 pF @ 15 V - - SOT-23 - 1.25W (Ta) -55°C ~ 150°C (TJ)
IRF7468TRPBF

IRF7468TRPBF

MOSFET N-CH 40V 9.4A 8SO

Infineon Technologies

7,734 -
IRF7468TRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9.4A (Ta) 4.5V, 10V 15.5mOhm @ 9.4A, 10V Surface Mount 2V @ 250µA 34 nC @ 4.5 V 40 V ±12V 2460 pF @ 20 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
STT2PF60L

STT2PF60L

MOSFET P-CH 60V 2A SOT23-6

STMicroelectronics

8,524 -
STT2PF60L

数据表

STripFET™ II SOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2A (Tc) 4.5V, 10V 250mOhm @ 1A, 10V Surface Mount 1V @ 250µA 7 nC @ 10 V 60 V ±15V 313 pF @ 25 V - - SOT-23-6 - 1.6W (Tc) 150°C (TJ)
BSP030,115

BSP030,115

MOSFET N-CH 30V 10A SOT223

Nexperia USA Inc.

9,417 -
BSP030,115

数据表

TrenchMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 4.5V, 10V 30mOhm @ 5A, 10V Surface Mount 2.8V @ 1mA 40 nC @ 10 V 30 V ±20V 770 pF @ 24 V - - SOT-223 - 8.3W (Tc) -65°C ~ 150°C (TJ)
SI7411DN-T1-E3

SI7411DN-T1-E3

MOSFET P-CH 20V 7.5A PPAK1212-8

Vishay Siliconix

3,514 -
SI7411DN-T1-E3

数据表

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 7.5A (Ta) 1.8V, 4.5V 19mOhm @ 11.4A, 4.5V Surface Mount 1V @ 300µA 41 nC @ 4.5 V 20 V ±8V - - - PowerPAK® 1212-8 - 1.5W (Ta) -55°C ~ 150°C (TJ)
IRF7467TRPBF

IRF7467TRPBF

MOSFET N-CH 30V 11A 8SO

Infineon Technologies

3,319 -
IRF7467TRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta) 2.8V, 10V 12mOhm @ 11A, 10V Surface Mount 2V @ 250µA 32 nC @ 4.5 V 30 V ±12V 2530 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
TPCC8005-H(TE12LQM

TPCC8005-H(TE12LQM

MOSFET N-CH 30V 26A 8TSON

Toshiba Semiconductor and Storage

4,056 -
TPCC8005-H(TE12LQM

数据表

U-MOSVI-H 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 26A (Ta) 4.5V, 10V 6.4mOhm @ 13A, 10V Surface Mount 2.3V @ 500µA 35 nC @ 10 V 30 V ±20V 2900 pF @ 10 V - - 8-TSON Advance (3.3x3.3) - 700mW (Ta), 30W (Tc) 150°C (TJ)
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