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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
MCB220N15Y-TP

MCB220N15Y-TP

MOSFET

Micro Commercial Co

7,990 -
MCB220N15Y-TP

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 220A (Tc) 6V, 10V 6.5mOhm @ 20A, 10V Surface Mount 4V @ 250µA 155 nC @ 10 V 150 V ±20V 9177 pF @ 75 V - - D2PAK - 312.5W (Tj) -55°C ~ 150°C (TJ)
RX3P07CBHC16

RX3P07CBHC16

NCH 100V 70A, TO-220AB, POWER M

Rohm Semiconductor

992 -
RX3P07CBHC16

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 6V, 10V 5.2mOhm @ 70A, 10V Through Hole 4V @ 1mA 73 nC @ 10 V 100 V ±20V 4650 pF @ 50 V - - TO-220AB - 135W (Tc) 150°C (TJ)
IPTC026N12NM6ATMA1

IPTC026N12NM6ATMA1

TRENCH >=100V

Infineon Technologies

1,580 -
IPTC026N12NM6ATMA1

数据表

OptiMOS™ 6 16-PowerSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 26A (Ta), 222A (Tc) 8V, 10V 2.6mOhm @ 115A, 10V Surface Mount 3.6V @ 169µA 88 nC @ 10 V 120 V ±20V 6500 pF @ 60 V - - PG-HDSOP-16-2 - 3.8W (Ta), 278W (Tc) -55°C ~ 175°C (TJ)
ISC130N20NM6ATMA1

ISC130N20NM6ATMA1

MOSFET

Infineon Technologies

4,434 -
ISC130N20NM6ATMA1

数据表

OptiMOS™ 6 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9.8A (Ta), 88A (Tc) 10V, 15V 11.7mOhm @ 50A, 15V Surface Mount 4.5V @ 135µA 58 nC @ 10 V 200 V ±20V 3900 pF @ 100 V - - PG-TSON-8-3 - 3W (Ta), 242W (Tc) -55°C ~ 175°C (TJ)
G2R1000MT17J-TR

G2R1000MT17J-TR

1700V 1000M TO-263-7 G2R SIC MOS

GeneSiC Semiconductor

606 -
G2R1000MT17J-TR

数据表

G2R™, LoRing™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 5A (Tc) 20V 1.2Ohm @ 2A, 20V Surface Mount 4V @ 2mA 11 nC @ 20 V 1700 V +20V, -5V 139 pF @ 1000 V - - TO-263-7 - 44W (Tc) -55°C ~ 175°C (TJ)
IXTP300N04T2

IXTP300N04T2

MOSFET N-CH 40V 300A TO220AB

Littelfuse Inc.

463 -
IXTP300N04T2

数据表

TrenchT2™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 300A (Tc) 10V 2.5mOhm @ 500mA, 10V Through Hole 4V @ 250µA 145 nC @ 10 V 40 V ±20V 10700 pF @ 25 V - - TO-220-3 - 480W (Tc) -55°C ~ 175°C (TJ)
IRF7470TR

IRF7470TR

MOSFET N-CH 40V 10A 8SO

Infineon Technologies

2,883 -
IRF7470TR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta) 2.8V, 10V 13mOhm @ 10A, 10V Surface Mount 2V @ 250µA 44 nC @ 4.5 V 40 V ±12V 3430 pF @ 20 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 155°C (TJ)
IPT023N10NM5LF2ATMA1

IPT023N10NM5LF2ATMA1

IPT023N10NM5LF2ATMA1

Infineon Technologies

1,980 -
IPT023N10NM5LF2ATMA1

数据表

OptiMOS™ 5 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 27A (Ta), 243A (Tc) 10V, 15V 2.1mOhm @ 100A, 15V Surface Mount 3.9V @ 193µA 144 nC @ 10 V 100 V ±20V 12000 pF @ 50 V - - PG-HSOF-8-1 - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ)
IRF8113TR

IRF8113TR

MOSFET N-CH 30V 17.2A 8SO

Infineon Technologies

3,210 -
IRF8113TR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 17.2A (Ta) 4.5V, 10V 5.6mOhm @ 17.2A, 10V Surface Mount 2.2V @ 250µA 36 nC @ 4.5 V 30 V ±20V 2910 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 155°C (TJ)
IPP65R110CFDXKSA2

IPP65R110CFDXKSA2

MOSFET N-CH 650V 31.2A TO220-3

Infineon Technologies

436 -
IPP65R110CFDXKSA2

数据表

CoolMOS™ CFD2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V Through Hole 4.5V @ 1.3mA 118 nC @ 10 V 650 V ±20V 3240 pF @ 100 V - - PG-TO220-3 - 277.8W (Tc) -55°C ~ 150°C (TJ)
STI6N80K5

STI6N80K5

MOSFET N-CH 800V 4.5A I2PAK

STMicroelectronics

5,401 -
STI6N80K5

数据表

SuperMESH5™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 1.6Ohm @ 2A, 10V Through Hole 5V @ 100µA 7.5 nC @ 10 V 800 V 30V 255 pF @ 100 V - - TO-262 (I2PAK) - 85W (Tc) -55°C ~ 150°C (TJ)
DIT085N10

DIT085N10

MOSFET TO-220AB N 100V 85A

Diotec Semiconductor

7,375 -
DIT085N10

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 85A (Tc) 4.5V, 10V 4.8mOhm @ 50A, 10V Through Hole 2.4V @ 250µA 75 nC @ 10 V 100 V ±20V 3742 pF @ 50 V - - TO-220AB - 62.5W (Tc) -55°C ~ 150°C (TJ)
IRF730ASTRRPBF

IRF730ASTRRPBF

MOSFET N-CH 400V 5.5A D2PAK

Vishay Siliconix

2,674 -
IRF730ASTRRPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V Surface Mount 4.5V @ 250µA 22 nC @ 10 V 400 V ±30V 600 pF @ 25 V - - TO-263 (D2PAK) - 74W (Tc) -55°C ~ 150°C (TJ)
IRF7413ATR

IRF7413ATR

MOSFET N-CH 30V 12A 8SO

Infineon Technologies

5,247 -
IRF7413ATR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta) 4.5V, 10V 13.5mOhm @ 6.6A, 10V Surface Mount 1V @ 250µA 79 nC @ 10 V 30 V ±20V 1800 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
SI4486EY-T1-GE3

SI4486EY-T1-GE3

MOSFET N-CH 100V 5.4A 8SO

Vishay Siliconix

8,211 -
SI4486EY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5.4A (Ta) 6V, 10V 25mOhm @ 7.9A, 10V Surface Mount 2V @ 250µA (Min) 44 nC @ 10 V 100 V ±20V - - - 8-SOIC - 1.8W (Ta) -55°C ~ 175°C (TJ)
CDF56G6517N TR13 PBFREE

CDF56G6517N TR13 PBFREE

650V, 17A, N-CHANNEL GAN FET IN

Central Semiconductor Corp

2,498 -
CDF56G6517N TR13 PBFREE

数据表

* 8-PowerVDFN Tape & Reel (TR) Active N-Channel - 17A (Tc) - - Surface Mount, Wettable Flank - - 650 V - - - - 8-DFN (5x6) - 1.1W (Ta) -
MCACL220N06Y-TP

MCACL220N06Y-TP

MOSFET N-CH 60 220A DFN5060-C

Micro Commercial Co

7,317 -
MCACL220N06Y-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 220A (Tc) 4.5V, 10V 1.6mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 119 nC @ 10 V 60 V ±20V 7500 pF @ 30 V - - DFN5060-C - 147W (Tj) -55°C ~ 150°C (TJ)
IPP60R385CPXKSA1

IPP60R385CPXKSA1

MOSFET N-CH 650V 9A TO220-3

Infineon Technologies

9,950 -
IPP60R385CPXKSA1

数据表

CoolMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 385mOhm @ 5.2A, 10V Through Hole 3.5V @ 340µA 22 nC @ 10 V 650 V ±20V 790 pF @ 100 V - - PG-TO220-3 - 83W (Tc) -55°C ~ 150°C (TJ)
S2M0120120K

S2M0120120K

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

295 -
S2M0120120K

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 21A (Tc) 20V 150mOhm @ 13.3A, 20V Through Hole 4V @ 3.3mA 29.6 nC @ 20 V 1200 V +20V, -5V 652 pF @ 1000 V - - TO-247-4 - 156W (Tc) -55°C ~ 175°C (TJ)
IPA60R385CPXKSA1

IPA60R385CPXKSA1

MOSFET N-CH 600V 9A TO220-FP

Infineon Technologies

9,801 -
IPA60R385CPXKSA1

数据表

CoolMOS™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 385mOhm @ 5.2A, 10V Through Hole 3.5V @ 340µA 22 nC @ 10 V 600 V ±20V 790 pF @ 100 V - - PG-TO220-3-31 - 31W (Tc) -55°C ~ 150°C (TJ)
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