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场效应晶体管(FETs)、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MCB220N15Y-TPMOSFET |
7,990 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 220A (Tc) | 6V, 10V | 6.5mOhm @ 20A, 10V | Surface Mount | 4V @ 250µA | 155 nC @ 10 V | 150 V | ±20V | 9177 pF @ 75 V | - | - | D2PAK | - | 312.5W (Tj) | -55°C ~ 150°C (TJ) |
|
RX3P07CBHC16NCH 100V 70A, TO-220AB, POWER M |
992 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 6V, 10V | 5.2mOhm @ 70A, 10V | Through Hole | 4V @ 1mA | 73 nC @ 10 V | 100 V | ±20V | 4650 pF @ 50 V | - | - | TO-220AB | - | 135W (Tc) | 150°C (TJ) |
|
IPTC026N12NM6ATMA1TRENCH >=100V |
1,580 | - |
|
数据表 |
OptiMOS™ 6 | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 26A (Ta), 222A (Tc) | 8V, 10V | 2.6mOhm @ 115A, 10V | Surface Mount | 3.6V @ 169µA | 88 nC @ 10 V | 120 V | ±20V | 6500 pF @ 60 V | - | - | PG-HDSOP-16-2 | - | 3.8W (Ta), 278W (Tc) | -55°C ~ 175°C (TJ) |
|
ISC130N20NM6ATMA1MOSFET |
4,434 | - |
|
数据表 |
OptiMOS™ 6 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 9.8A (Ta), 88A (Tc) | 10V, 15V | 11.7mOhm @ 50A, 15V | Surface Mount | 4.5V @ 135µA | 58 nC @ 10 V | 200 V | ±20V | 3900 pF @ 100 V | - | - | PG-TSON-8-3 | - | 3W (Ta), 242W (Tc) | -55°C ~ 175°C (TJ) |
|
G2R1000MT17J-TR1700V 1000M TO-263-7 G2R SIC MOS |
606 | - |
|
数据表 |
G2R™, LoRing™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 5A (Tc) | 20V | 1.2Ohm @ 2A, 20V | Surface Mount | 4V @ 2mA | 11 nC @ 20 V | 1700 V | +20V, -5V | 139 pF @ 1000 V | - | - | TO-263-7 | - | 44W (Tc) | -55°C ~ 175°C (TJ) |
|
IXTP300N04T2MOSFET N-CH 40V 300A TO220AB |
463 | - |
|
数据表 |
TrenchT2™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300A (Tc) | 10V | 2.5mOhm @ 500mA, 10V | Through Hole | 4V @ 250µA | 145 nC @ 10 V | 40 V | ±20V | 10700 pF @ 25 V | - | - | TO-220-3 | - | 480W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF7470TRMOSFET N-CH 40V 10A 8SO |
2,883 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10A (Ta) | 2.8V, 10V | 13mOhm @ 10A, 10V | Surface Mount | 2V @ 250µA | 44 nC @ 4.5 V | 40 V | ±12V | 3430 pF @ 20 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) |
|
IPT023N10NM5LF2ATMA1IPT023N10NM5LF2ATMA1 |
1,980 | - |
|
数据表 |
OptiMOS™ 5 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 27A (Ta), 243A (Tc) | 10V, 15V | 2.1mOhm @ 100A, 15V | Surface Mount | 3.9V @ 193µA | 144 nC @ 10 V | 100 V | ±20V | 12000 pF @ 50 V | - | - | PG-HSOF-8-1 | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF8113TRMOSFET N-CH 30V 17.2A 8SO |
3,210 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17.2A (Ta) | 4.5V, 10V | 5.6mOhm @ 17.2A, 10V | Surface Mount | 2.2V @ 250µA | 36 nC @ 4.5 V | 30 V | ±20V | 2910 pF @ 15 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) |
|
IPP65R110CFDXKSA2MOSFET N-CH 650V 31.2A TO220-3 |
436 | - |
|
数据表 |
CoolMOS™ CFD2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | Through Hole | 4.5V @ 1.3mA | 118 nC @ 10 V | 650 V | ±20V | 3240 pF @ 100 V | - | - | PG-TO220-3 | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) |
|
STI6N80K5MOSFET N-CH 800V 4.5A I2PAK |
5,401 | - |
|
数据表 |
SuperMESH5™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.5A (Tc) | 10V | 1.6Ohm @ 2A, 10V | Through Hole | 5V @ 100µA | 7.5 nC @ 10 V | 800 V | 30V | 255 pF @ 100 V | - | - | TO-262 (I2PAK) | - | 85W (Tc) | -55°C ~ 150°C (TJ) |
|
DIT085N10MOSFET TO-220AB N 100V 85A |
7,375 | - |
|
数据表 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 85A (Tc) | 4.5V, 10V | 4.8mOhm @ 50A, 10V | Through Hole | 2.4V @ 250µA | 75 nC @ 10 V | 100 V | ±20V | 3742 pF @ 50 V | - | - | TO-220AB | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF730ASTRRPBFMOSFET N-CH 400V 5.5A D2PAK |
2,674 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | Surface Mount | 4.5V @ 250µA | 22 nC @ 10 V | 400 V | ±30V | 600 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 74W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF7413ATRMOSFET N-CH 30V 12A 8SO |
5,247 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Ta) | 4.5V, 10V | 13.5mOhm @ 6.6A, 10V | Surface Mount | 1V @ 250µA | 79 nC @ 10 V | 30 V | ±20V | 1800 pF @ 25 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
SI4486EY-T1-GE3MOSFET N-CH 100V 5.4A 8SO |
8,211 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.4A (Ta) | 6V, 10V | 25mOhm @ 7.9A, 10V | Surface Mount | 2V @ 250µA (Min) | 44 nC @ 10 V | 100 V | ±20V | - | - | - | 8-SOIC | - | 1.8W (Ta) | -55°C ~ 175°C (TJ) |
|
CDF56G6517N TR13 PBFREE650V, 17A, N-CHANNEL GAN FET IN |
2,498 | - |
|
数据表 |
* | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | - | 17A (Tc) | - | - | Surface Mount, Wettable Flank | - | - | 650 V | - | - | - | - | 8-DFN (5x6) | - | 1.1W (Ta) | - |
|
MCACL220N06Y-TPMOSFET N-CH 60 220A DFN5060-C |
7,317 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 220A (Tc) | 4.5V, 10V | 1.6mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 119 nC @ 10 V | 60 V | ±20V | 7500 pF @ 30 V | - | - | DFN5060-C | - | 147W (Tj) | -55°C ~ 150°C (TJ) |
|
IPP60R385CPXKSA1MOSFET N-CH 650V 9A TO220-3 |
9,950 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 385mOhm @ 5.2A, 10V | Through Hole | 3.5V @ 340µA | 22 nC @ 10 V | 650 V | ±20V | 790 pF @ 100 V | - | - | PG-TO220-3 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
S2M0120120KMOSFET SILICON CARBIDE SIC 1200V |
295 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 21A (Tc) | 20V | 150mOhm @ 13.3A, 20V | Through Hole | 4V @ 3.3mA | 29.6 nC @ 20 V | 1200 V | +20V, -5V | 652 pF @ 1000 V | - | - | TO-247-4 | - | 156W (Tc) | -55°C ~ 175°C (TJ) |
|
IPA60R385CPXKSA1MOSFET N-CH 600V 9A TO220-FP |
9,801 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 385mOhm @ 5.2A, 10V | Through Hole | 3.5V @ 340µA | 22 nC @ 10 V | 600 V | ±20V | 790 pF @ 100 V | - | - | PG-TO220-3-31 | - | 31W (Tc) | -55°C ~ 150°C (TJ) |
