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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SIHH155N60EF-T1GE3

SIHH155N60EF-T1GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

6,000 -
SIHH155N60EF-T1GE3

数据表

EF 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 155mOhm @ 10A, 10V Surface Mount 5V @ 250µA 38 nC @ 10 V 600 V ±30V 1465 pF @ 100 V - - PowerPAK® 8 x 8 - 156W (Tc) -55°C ~ 150°C (TJ)
SIHH150N60E-T1-GE3

SIHH150N60E-T1-GE3

E SERIES POWER MOSFET POWERPAK 8

Vishay Siliconix

6,000 -
SIHH150N60E-T1-GE3

数据表

E 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 155mOhm @ 10A, 10V Surface Mount 5V @ 250µA 36 nC @ 10 V 600 V ±30V 1514 pF @ 100 V - - PowerPAK® 8 x 8 - 156W (Tc) -55°C ~ 150°C (TJ)
SIHK155N60EF-T1GE3

SIHK155N60EF-T1GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

4,000 -
SIHK155N60EF-T1GE3

数据表

EF 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 52mOhm @ 10A, 10V Surface Mount 5V @ 250µA 38 nC @ 10 V 600 V ±20V 1465 pF @ 100 V - - PowerPAK®10 x 12 - 156W (Tc) -55°C ~ 150°C (TJ)
TK22V65X5,LQ

TK22V65X5,LQ

PB-F POWER MOSFET TRANSISTOR DFN

Toshiba Semiconductor and Storage

2,500 -
TK22V65X5,LQ

数据表

DTMOSIV-H 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 22A (Ta) 10V 170mOhm @ 11A, 10V Surface Mount 4.5V @ 1.1mA 50 nC @ 10 V 650 V ±30V 2400 pF @ 300 V - - 4-DFN-EP (8x8) - 180W (Tc) 150°C
IMDQ75R090M1HXUMA1

IMDQ75R090M1HXUMA1

IMDQ75R090M1HXUMA1

Infineon Technologies

744 -
IMDQ75R090M1HXUMA1

数据表

CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 24A (Tj) 15V, 20V 83mOhm @ 7.4A, 20V Surface Mount 5.6V @ 2.6mA 15 nC @ 18 V 750 V +20V, -2V 542 pF @ 500 V - - PG-HDSOP-22-1 - 128W (Tc) -55°C ~ 175°C (TJ)
GS-065-008-6-L-MR

GS-065-008-6-L-MR

GS-065-008-6-L-MR

Infineon Technologies Canada Inc.

922 -
GS-065-008-6-L-MR

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 8.8A (Tc) 6V 235mOhm @ 2.2A, 6V Surface Mount 2.6V @ 1.7mA 1.6 nC @ 6 V 700 V +7V, -10V 54 pF @ 400 V - - 8-PDFN (5x6) - - -55°C ~ 150°C (TJ)
IAUTN06S5N008ATMA1

IAUTN06S5N008ATMA1

MOSFET_)40V 60V)

Infineon Technologies

6,000 -
IAUTN06S5N008ATMA1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPDQ65R060CFD7XTMA1

IPDQ65R060CFD7XTMA1

HIGH POWER_NEW

Infineon Technologies

730 -
IPDQ65R060CFD7XTMA1

数据表

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 45A (Tc) 10V 60mOhm @ 16.4A, 10V Surface Mount 4.5V @ 820µA 65 nC @ 10 V 650 V ±20V 3288 pF @ 400 V - - PG-HDSOP-22-1 - 272W (Tc) -55°C ~ 150°C (TJ)
IPF031N13NM6ATMA1

IPF031N13NM6ATMA1

TRENCH >=100V

Infineon Technologies

690 -
IPF031N13NM6ATMA1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
ISC044N15NM6ATMA1

ISC044N15NM6ATMA1

TRENCH >=100V

Infineon Technologies

4,019 -
ISC044N15NM6ATMA1

数据表

OptiMOS™ 6 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17.1A (Ta), 156A (Tc) 8V, 15V 4.2mOhm @ 50A, 15V Surface Mount 4V @ 140µA 72 nC @ 75 V 150 V ±20V 5100 pF @ 75 V - - PG-TSON-8-3 - 3W (Ta), 250W (Tc) -55°C ~ 175°C (TJ)
NVMFS5C404NWFET1G

NVMFS5C404NWFET1G

T6-40V N 0.7 MOHMS SL

onsemi

1,500 -
NVMFS5C404NWFET1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 53A (Ta), 378A (Tc) 10V 0.70mOhm @ 50A, 10V Surface Mount, Wettable Flank 4V @ 250µA 128 nC @ 10 V 40 V ±20V 8400 pF @ 25 V AEC-Q101 - 5-DFNW (4.9x5.9) (8-SOFL-WF) Automotive 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ)
IPI90R340C3XKSA2

IPI90R340C3XKSA2

MOSFET N-CH 900V 15A TO262-3

Infineon Technologies

495 -
IPI90R340C3XKSA2

数据表

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 340mOhm @ 9.2A, 10V Through Hole 3.5V @ 1mA 94 nC @ 10 V 900 V ±20V 2400 pF @ 100 V - - PG-TO262-3-1 - 208W (Tc) -55°C ~ 150°C (TJ)
IPA90R340C3XKSA2

IPA90R340C3XKSA2

MOSFET N-CH 900V 15A TO220

Infineon Technologies

316 -
IPA90R340C3XKSA2

数据表

CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 340mOhm @ 9.2A, 10V Through Hole 3.5V @ 1mA 94 nC @ 10 V 900 V ±20V 2400 pF @ 100 V - - PG-TO220-FP - 35W (Tc) -55°C ~ 150°C (TJ)
IPP90R340C3XKSA2

IPP90R340C3XKSA2

MOSFET N-CH 900V 15A TO220-3

Infineon Technologies

298 -
IPP90R340C3XKSA2

数据表

CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 340mOhm @ 9.2A, 10V Through Hole 3.5V @ 1mA 94 nC @ 10 V 900 V ±20V 2400 pF @ 100 V - - PG-TO220-3-1 - 208W (Tc) -55°C ~ 150°C (TJ)
MSC360SMA120B

MSC360SMA120B

MOSFET SIC 1200 V 360 MOHM TO-24

Microchip Technology

130 -
MSC360SMA120B

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 11A (Tc) 20V 450mOhm @ 5A, 20V Through Hole 3.14V @ 500µA (Typ) 21 nC @ 20 V 1200 V +23V, -10V 255 pF @ 1000 V - - TO-247-3 - 78W (Tc) -55°C ~ 175°C (TJ)
NVMFS5844NLT1G

NVMFS5844NLT1G

MOSFET N-CH 60V 11.2A 5DFN

onsemi

4,064 -
NVMFS5844NLT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11.2A (Ta) 4.5V, 10V 12mOhm @ 10A, 10V Surface Mount 2.3V @ 250µA 30 nC @ 10 V 60 V ±20V 1460 pF @ 25 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.7W (Ta), 107W (Tc) -55°C ~ 175°C (TJ)
SIR864DP-T1-GE3

SIR864DP-T1-GE3

MOSFET N-CH 30V 40A PPAK SO-8

Vishay Siliconix

5,420 -
SIR864DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 3.6mOhm @ 15A, 10V Surface Mount 2.4V @ 250µA 65 nC @ 10 V 30 V ±20V 2460 pF @ 15 V - - PowerPAK® SO-8 - 5W (Ta), 54W (Tc) -55°C ~ 150°C (TJ)
AOD9T40P

AOD9T40P

MOSFET N-CH 400V 6.6A TO252

Alpha & Omega Semiconductor Inc.

4,908 -
AOD9T40P

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6.6A (Tc) 10V 800mOhm @ 4A, 10V Surface Mount 5V @ 250µA 18 nC @ 10 V 400 V ±30V 530 pF @ 100 V - - TO-252 (DPAK) - 83W (Tc) -55°C ~ 150°C (TJ)
TPCA8047-H(T2L1,VM

TPCA8047-H(T2L1,VM

MOSFET N-CH 40V 32A 8SOP

Toshiba Semiconductor and Storage

6,282 -
TPCA8047-H(T2L1,VM

数据表

U-MOSVI-H 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 32A (Ta) 4.5V, 10V 7.3mOhm @ 16A, 10V Surface Mount 2.3V @ 500µA 43 nC @ 10 V 40 V ±20V 3365 pF @ 10 V - - 8-SOP Advance (5x5) - 1.6W (Ta), 45W (Tc) 150°C
PHP45NQ10T,127

PHP45NQ10T,127

MOSFET N-CH 100V 47A TO220AB

Nexperia USA Inc.

6,686 -
PHP45NQ10T,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 25mOhm @ 25A, 10V Through Hole 4V @ 1mA 61 nC @ 10 V 100 V ±20V 2600 pF @ 25 V - - TO-220AB - 150W (Tc) -55°C ~ 175°C (TJ)
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