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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
DMT3M70LPSW-13

DMT3M70LPSW-13

LINEAR IC

Diodes Incorporated

9,850 -
DMT3M70LPSW-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 61A (Ta) 4.5V, 10V 680mOhm @ 20A, 10V Surface Mount, Wettable Flank 3V @ 250µA 152.7 nC @ 10 V 30 V ±20V 11112 pF @ 15 V - - PowerDI5060-8 (Type UX) - 2.13W -55°C ~ 150°C (TJ)
IRL540NLPBF

IRL540NLPBF

MOSFET N-CH 100V 36A TO262

Infineon Technologies

4,441 -
IRL540NLPBF

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 36A (Tc) 4V, 10V 44mOhm @ 18A, 10V Through Hole 2V @ 250µA 74 nC @ 5 V 100 V ±16V 1800 pF @ 25 V - - TO-262 - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ)
IQFH36N04NM6ATMA1

IQFH36N04NM6ATMA1

IQFH36N04NM6ATMA1

Infineon Technologies

2,507 -
IQFH36N04NM6ATMA1

数据表

OptiMOS™ 6 12-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 66A (Ta), 656A (Tc) 6V, 10V 0.36mOhm @ 100A, 10V Surface Mount 2.8V @ 1.05mA 309 nC @ 10 V 40 V ±20V 18600 pF @ 20 V - - PG-TSON-12-1 - 3W (Ta), 300W (Tc) -55°C ~ 175°C (TJ)
IPB50N10S3L16ATMA2

IPB50N10S3L16ATMA2

MOSFET N-CH 100V 70A TO263-3

Infineon Technologies

6,655 -
IPB50N10S3L16ATMA2

数据表

OptiMOS™ T TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 15.7mOhm @ 50A, 10V Surface Mount 2.4V @ 60µA 64 nC @ 10 V 100 V ±20V 4180 pF @ 25 V AEC-Q101 - PG-TO263-3-2 Automotive 100W (Tc) -55°C ~ 175°C (TJ)
MCACL120N10YA-TP

MCACL120N10YA-TP

MOSFET N-CH 100 120A DFN5060

Micro Commercial Co

9,955 -
MCACL120N10YA-TP

数据表

- 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 120A 10V 4mOhm @ 60A, 10V Surface Mount 2.5V @ 250µA 65 nC @ 10 V 100 V ±20V 4400 pF @ 50 V - - DFN5060 - 116W -55°C ~ 150°C
S2M0120120D

S2M0120120D

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

264 -
S2M0120120D

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 21A (Tc) 20V 150mOhm @ 13.3A, 20V Through Hole 4V @ 3.3mA 29.6 nC @ 20 V 1200 V +20V, -5V 652 pF @ 1000 V - - TO-247AD - 156W (Tc) -55°C ~ 175°C (TJ)
MCACL120N10Y-TP

MCACL120N10Y-TP

MOSFET N-CH 100 120A DFN5060

Micro Commercial Co

3,809 -
MCACL120N10Y-TP

数据表

- 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 120A 10V 4.2mOhm @ 60A, 10V Surface Mount 4V @ 250µA 70 nC @ 10 V 100 V ±20V 4400 pF @ 50 V - - DFN5060 - 108W -55°C ~ 150°C
IMBG120R181M2HXTMA1

IMBG120R181M2HXTMA1

SIC DISCRETE

Infineon Technologies

128 -
IMBG120R181M2HXTMA1

数据表

CoolSiC™ Gen 2 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 14.9A (Tc) 15V, 18V 181.4mOhm @ 3.9A, 18V Surface Mount 5.1V @ 1.2mA 9.7 nC @ 18 V 1200 V +23V, -10V 350 pF @ 800 V - - PG-TO263-7-12 - 94W (Tc) -55°C ~ 175°C (TJ)
FQAF58N08

FQAF58N08

MOSFET N-CH 80V 44A TO3PF

onsemi

3,179 -
FQAF58N08

数据表

QFET® TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 44A (Tc) 10V 24mOhm @ 22A, 10V Through Hole 4V @ 250µA 65 nC @ 10 V 80 V ±25V 1900 pF @ 25 V - - TO-3PF - 85W (Tc) -55°C ~ 175°C (TJ)
SIHK155N60E-T1-GE3

SIHK155N60E-T1-GE3

E SERIES POWER MOSFET POWERPAK 1

Vishay Siliconix

4,000 -
SIHK155N60E-T1-GE3

数据表

E 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 155mOhm @ 10A, 10V Surface Mount 5V @ 250µA 36 nC @ 10 V 600 V ±30V 1514 pF @ 100 V - - PowerPAK®10 x 12 - 156W (Tc) -55°C ~ 150°C (TJ)
SPB80N06S2-08

SPB80N06S2-08

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies

2,468 -
SPB80N06S2-08

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 8mOhm @ 58A, 10V Surface Mount 4V @ 150µA 96 nC @ 10 V 55 V ±20V 3800 pF @ 25 V - - PG-TO263-3-2 - 215W (Tc) -55°C ~ 175°C (TJ)
NVMTS1D0N04CLTXG

NVMTS1D0N04CLTXG

T6 40V LL AIZU SINGLE NCH PQFN 8

onsemi

3,000 -
NVMTS1D0N04CLTXG

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 51.3A (Ta), 291A (Tc) 4.5V, 10V 1mOhm @ 50A, 10V Surface Mount 3V @ 210µA 122 nC @ 10 V 40 V ±20V 7408 pF @ 25 V AEC-Q101 - 8-DFNW (8.3x8.4) Automotive 4.7W (Ta), 153W (Tc) -55°C ~ 175°C (TJ)
SPB80N06S2L-07

SPB80N06S2L-07

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies

8,805 -
SPB80N06S2L-07

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V Surface Mount 2V @ 150µA 130 nC @ 10 V 55 V ±20V 4210 pF @ 25 V - - PG-TO263-3-2 - 210W (Tc) -55°C ~ 175°C (TJ)
MCTL80N20Y-TP

MCTL80N20Y-TP

N-CHANNEL MOSFET,TOLL-8L

Micro Commercial Co

3,964 -
MCTL80N20Y-TP

数据表

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 13mOhm @ 30A, 10V Surface Mount 4V @ 250µA 144 nC @ 10 V 200 V ±20V 10387 pF @ 25 V - - TOLL-8L - 250W (Tj) -55°C ~ 150°C (TJ)
IPA65R420CFDXKSA2

IPA65R420CFDXKSA2

MOSFET N-CH 650V 8.7A TO220

Infineon Technologies

2,623 -
IPA65R420CFDXKSA2

数据表

CoolMOS™ CFD2 TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V Through Hole 4.5V @ 300µA 31.5 nC @ 10 V 650 V ±20V 870 pF @ 100 V - - PG-TO220-FP - 31.2W (Tc) -55°C ~ 150°C (TJ)
IPT60T065S7XTMA1

IPT60T065S7XTMA1

HIGH POWER_NEW

Infineon Technologies

1,930 -
IPT60T065S7XTMA1

数据表

CoolMOS™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 12V 65mOhm @ 8A, 12V Surface Mount 4.5V @ 470µA 51 nC @ 12 V 600 V ±20V 1932 pF @ 300 V - - PG-HSOF-8-2 - 167W (Tc) -55°C ~ 150°C (TJ)
BSO303SPHXUMA1

BSO303SPHXUMA1

MOSFET P-CH 30V 7.2A 8DSO

Infineon Technologies

8,700 -
BSO303SPHXUMA1

数据表

OptiMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 7.2A (Ta) 4.5V, 10V 21mOhm @ 9.1A, 10V Surface Mount 2V @ 100µA 54 nC @ 10 V 30 V ±20V 2330 pF @ 25 V - - PG-DSO-8 - 1.56W (Ta) -55°C ~ 150°C (TJ)
IMBG40R045M2HXTMA1

IMBG40R045M2HXTMA1

SIC-MOS

Infineon Technologies

945 -
IMBG40R045M2HXTMA1

数据表

CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 6.8A (Ta), 43A (Tc) 15V, 18V 56.2mOhm @ 8.9A, 18V Surface Mount 5.6V @ 3.2mA 21 nC @ 18 V 400 V +23V, -7V 910 pF @ 200 V - - PG-TO263-7-11 - 3.8W (Ta), 150W (Tc) -55°C ~ 175°C (TJ)
IRF7811WGTRPBF

IRF7811WGTRPBF

MOSFET N-CH 30V 14A 8SO

Infineon Technologies

9,633 -
IRF7811WGTRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta) 4.5V 12mOhm @ 15A, 4.5V Surface Mount 1V @ 250µA 33 nC @ 5 V 30 V ±12V 2335 pF @ 16 V - - 8-SO - 3.1W (Ta) -55°C ~ 150°C (TJ)
NVMFS5C404NWFAFT1G

NVMFS5C404NWFAFT1G

MOSFET N-CH 40V 53A/378A 5DFN

onsemi

760 -
NVMFS5C404NWFAFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 53A (Ta), 378A (Tc) 10V 0.7mOhm @ 50A, 10V Surface Mount, Wettable Flank 4V @ 250µA 128 nC @ 10 V 40 V ±20V 8400 pF @ 25 V AEC-Q101 - 5-DFNW (4.9x5.9) (8-SOFL-WF) Automotive 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ)
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