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场效应晶体管(FETs)、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMT3M70LPSW-13LINEAR IC |
9,850 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 61A (Ta) | 4.5V, 10V | 680mOhm @ 20A, 10V | Surface Mount, Wettable Flank | 3V @ 250µA | 152.7 nC @ 10 V | 30 V | ±20V | 11112 pF @ 15 V | - | - | PowerDI5060-8 (Type UX) | - | 2.13W | -55°C ~ 150°C (TJ) |
|
IRL540NLPBFMOSFET N-CH 100V 36A TO262 |
4,441 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 36A (Tc) | 4V, 10V | 44mOhm @ 18A, 10V | Through Hole | 2V @ 250µA | 74 nC @ 5 V | 100 V | ±16V | 1800 pF @ 25 V | - | - | TO-262 | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) |
|
IQFH36N04NM6ATMA1IQFH36N04NM6ATMA1 |
2,507 | - |
|
数据表 |
OptiMOS™ 6 | 12-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 66A (Ta), 656A (Tc) | 6V, 10V | 0.36mOhm @ 100A, 10V | Surface Mount | 2.8V @ 1.05mA | 309 nC @ 10 V | 40 V | ±20V | 18600 pF @ 20 V | - | - | PG-TSON-12-1 | - | 3W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) |
|
IPB50N10S3L16ATMA2MOSFET N-CH 100V 70A TO263-3 |
6,655 | - |
|
数据表 |
OptiMOS™ T | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 15.7mOhm @ 50A, 10V | Surface Mount | 2.4V @ 60µA | 64 nC @ 10 V | 100 V | ±20V | 4180 pF @ 25 V | AEC-Q101 | - | PG-TO263-3-2 | Automotive | 100W (Tc) | -55°C ~ 175°C (TJ) |
|
MCACL120N10YA-TPMOSFET N-CH 100 120A DFN5060 |
9,955 | - |
|
数据表 |
- | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 120A | 10V | 4mOhm @ 60A, 10V | Surface Mount | 2.5V @ 250µA | 65 nC @ 10 V | 100 V | ±20V | 4400 pF @ 50 V | - | - | DFN5060 | - | 116W | -55°C ~ 150°C |
|
S2M0120120DMOSFET SILICON CARBIDE SIC 1200V |
264 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 21A (Tc) | 20V | 150mOhm @ 13.3A, 20V | Through Hole | 4V @ 3.3mA | 29.6 nC @ 20 V | 1200 V | +20V, -5V | 652 pF @ 1000 V | - | - | TO-247AD | - | 156W (Tc) | -55°C ~ 175°C (TJ) |
|
MCACL120N10Y-TPMOSFET N-CH 100 120A DFN5060 |
3,809 | - |
|
数据表 |
- | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 120A | 10V | 4.2mOhm @ 60A, 10V | Surface Mount | 4V @ 250µA | 70 nC @ 10 V | 100 V | ±20V | 4400 pF @ 50 V | - | - | DFN5060 | - | 108W | -55°C ~ 150°C |
|
IMBG120R181M2HXTMA1SIC DISCRETE |
128 | - |
|
数据表 |
CoolSiC™ Gen 2 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 14.9A (Tc) | 15V, 18V | 181.4mOhm @ 3.9A, 18V | Surface Mount | 5.1V @ 1.2mA | 9.7 nC @ 18 V | 1200 V | +23V, -10V | 350 pF @ 800 V | - | - | PG-TO263-7-12 | - | 94W (Tc) | -55°C ~ 175°C (TJ) |
|
FQAF58N08MOSFET N-CH 80V 44A TO3PF |
3,179 | - |
|
数据表 |
QFET® | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 44A (Tc) | 10V | 24mOhm @ 22A, 10V | Through Hole | 4V @ 250µA | 65 nC @ 10 V | 80 V | ±25V | 1900 pF @ 25 V | - | - | TO-3PF | - | 85W (Tc) | -55°C ~ 175°C (TJ) |
|
SIHK155N60E-T1-GE3E SERIES POWER MOSFET POWERPAK 1 |
4,000 | - |
|
数据表 |
E | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 19A (Tc) | 10V | 155mOhm @ 10A, 10V | Surface Mount | 5V @ 250µA | 36 nC @ 10 V | 600 V | ±30V | 1514 pF @ 100 V | - | - | PowerPAK®10 x 12 | - | 156W (Tc) | -55°C ~ 150°C (TJ) |
|
SPB80N06S2-08MOSFET N-CH 55V 80A TO263-3 |
2,468 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 8mOhm @ 58A, 10V | Surface Mount | 4V @ 150µA | 96 nC @ 10 V | 55 V | ±20V | 3800 pF @ 25 V | - | - | PG-TO263-3-2 | - | 215W (Tc) | -55°C ~ 175°C (TJ) |
|
NVMTS1D0N04CLTXGT6 40V LL AIZU SINGLE NCH PQFN 8 |
3,000 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 51.3A (Ta), 291A (Tc) | 4.5V, 10V | 1mOhm @ 50A, 10V | Surface Mount | 3V @ 210µA | 122 nC @ 10 V | 40 V | ±20V | 7408 pF @ 25 V | AEC-Q101 | - | 8-DFNW (8.3x8.4) | Automotive | 4.7W (Ta), 153W (Tc) | -55°C ~ 175°C (TJ) |
|
SPB80N06S2L-07MOSFET N-CH 55V 80A TO263-3 |
8,805 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | Surface Mount | 2V @ 150µA | 130 nC @ 10 V | 55 V | ±20V | 4210 pF @ 25 V | - | - | PG-TO263-3-2 | - | 210W (Tc) | -55°C ~ 175°C (TJ) |
|
MCTL80N20Y-TPN-CHANNEL MOSFET,TOLL-8L |
3,964 | - |
|
数据表 |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 13mOhm @ 30A, 10V | Surface Mount | 4V @ 250µA | 144 nC @ 10 V | 200 V | ±20V | 10387 pF @ 25 V | - | - | TOLL-8L | - | 250W (Tj) | -55°C ~ 150°C (TJ) |
|
IPA65R420CFDXKSA2MOSFET N-CH 650V 8.7A TO220 |
2,623 | - |
|
数据表 |
CoolMOS™ CFD2 | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | Through Hole | 4.5V @ 300µA | 31.5 nC @ 10 V | 650 V | ±20V | 870 pF @ 100 V | - | - | PG-TO220-FP | - | 31.2W (Tc) | -55°C ~ 150°C (TJ) |
|
IPT60T065S7XTMA1HIGH POWER_NEW |
1,930 | - |
|
数据表 |
CoolMOS™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 12V | 65mOhm @ 8A, 12V | Surface Mount | 4.5V @ 470µA | 51 nC @ 12 V | 600 V | ±20V | 1932 pF @ 300 V | - | - | PG-HSOF-8-2 | - | 167W (Tc) | -55°C ~ 150°C (TJ) |
|
BSO303SPHXUMA1MOSFET P-CH 30V 7.2A 8DSO |
8,700 | - |
|
数据表 |
OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 7.2A (Ta) | 4.5V, 10V | 21mOhm @ 9.1A, 10V | Surface Mount | 2V @ 100µA | 54 nC @ 10 V | 30 V | ±20V | 2330 pF @ 25 V | - | - | PG-DSO-8 | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) |
|
IMBG40R045M2HXTMA1SIC-MOS |
945 | - |
|
数据表 |
CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 6.8A (Ta), 43A (Tc) | 15V, 18V | 56.2mOhm @ 8.9A, 18V | Surface Mount | 5.6V @ 3.2mA | 21 nC @ 18 V | 400 V | +23V, -7V | 910 pF @ 200 V | - | - | PG-TO263-7-11 | - | 3.8W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF7811WGTRPBFMOSFET N-CH 30V 14A 8SO |
9,633 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 14A (Ta) | 4.5V | 12mOhm @ 15A, 4.5V | Surface Mount | 1V @ 250µA | 33 nC @ 5 V | 30 V | ±12V | 2335 pF @ 16 V | - | - | 8-SO | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) |
|
NVMFS5C404NWFAFT1GMOSFET N-CH 40V 53A/378A 5DFN |
760 | - |
|
数据表 |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 53A (Ta), 378A (Tc) | 10V | 0.7mOhm @ 50A, 10V | Surface Mount, Wettable Flank | 4V @ 250µA | 128 nC @ 10 V | 40 V | ±20V | 8400 pF @ 25 V | AEC-Q101 | - | 5-DFNW (4.9x5.9) (8-SOFL-WF) | Automotive | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) |
