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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRFL024N

IRFL024N

MOSFET N-CH 55V 2.8A SOT223

Infineon Technologies

5,303 -
IRFL024N

数据表

HEXFET® TO-261-4, TO-261AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.8A (Ta) 10V 75mOhm @ 2.8A, 10V Surface Mount 4V @ 250µA 18.3 nC @ 10 V 55 V ±20V 400 pF @ 25 V - - SOT-223 - 1W (Ta) -55°C ~ 150°C (TJ)
SI4493DY-T1-E3

SI4493DY-T1-E3

MOSFET P-CH 20V 10A 8SO

Vishay Siliconix

3,310 -
SI4493DY-T1-E3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 10A (Ta) 2.5V, 4.5V 7.75mOhm @ 14A, 4.5V Surface Mount 1.4V @ 250µA 110 nC @ 4.5 V 20 V ±12V - - - 8-SOIC - 1.5W (Ta) -55°C ~ 150°C (TJ)
MCACL280N03Y-TP

MCACL280N03Y-TP

MOSFET N-CH 30 280A DFN5060

Micro Commercial Co

6,643 -
MCACL280N03Y-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 280A (Tc) 4.5V, 10V 0.7mOhm @ 75A, 10V Surface Mount 2.5V @ 250µA 135 nC @ 10 V 30 V ±20V 5877 pF @ 25 V - - DFN5060 - 150W (Tj) -55°C ~ 175°C (TJ)
STP8NM60

STP8NM60

MOSFET N-CH 650V 8A TO220AB

STMicroelectronics

5,285 -
STP8NM60

数据表

MDmesh™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 1Ohm @ 2.5A, 10V Through Hole 5V @ 250µA 18 nC @ 10 V 650 V ±30V 400 pF @ 25 V - - TO-220 - 100W (Tc) -55°C ~ 150°C (TJ)
STP10N65K3

STP10N65K3

MOSFET N-CH 650V 10A TO220

STMicroelectronics

4,497 -
STP10N65K3

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 1Ohm @ 3.6A, 10V Through Hole 4.5V @ 100µA 42 nC @ 10 V 650 V ±30V 1180 pF @ 25 V - - TO-220 - 150W (Tc) -55°C ~ 150°C (TJ)
STFU23N80K5

STFU23N80K5

MOSFET N-CH 800V 16A TO220FP

STMicroelectronics

619 -
STFU23N80K5

数据表

MDmesh™ K5 TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 280mOhm @ 8A, 10V Through Hole 5V @ 100µA 33 nC @ 10 V 800 V ±30V 1000 pF @ 100 V - - TO-220FP - 35W (Tc) -55°C ~ 150°C (TJ)
STH180N4F6-2

STH180N4F6-2

MOSFET N-CH 40V 120A H2PAK-2

STMicroelectronics

4,629 -
STH180N4F6-2

数据表

STripFET™ F6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 2.4mOhm @ 60A, 10V Surface Mount 4.5V @ 250µA 130 nC @ 10 V 40 V ±20V 7735 pF @ 25 V - - H2PAK-2 - 190W (Tc) -55°C ~ 175°C (TJ)
STF4N62K3

STF4N62K3

MOSFET N-CH 620V 3.8A TO220FP

STMicroelectronics

7,655 -
STF4N62K3

数据表

SuperMESH3™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 3.8A (Tc) 10V 2Ohm @ 1.9A, 10V Through Hole 4.5V @ 50µA 22 nC @ 10 V 620 V ±30V 550 pF @ 50 V - - TO-220FP - 25W (Tc) 150°C (TJ)
IMZA75R140M1HXKSA1

IMZA75R140M1HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

235 -
IMZA75R140M1HXKSA1

数据表

CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 16A (Tj) 15V, 20V 129mOhm @ 4.7A, 20V Through Hole 5.6V @ 1.7mA 13 nC @ 18 V 750 V +23V, -5V 351 pF @ 500 V - - PG-TO247-4 - 86W (Tc) -55°C ~ 175°C (TJ)
IPB80N04S306ATMA1

IPB80N04S306ATMA1

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies

6,387 -
IPB80N04S306ATMA1

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 5.4mOhm @ 80A, 10V Surface Mount 4V @ 52µA 47 nC @ 10 V 40 V ±20V 3250 pF @ 25 V - - PG-TO263-3-2 - 100W (Tc) -55°C ~ 175°C (TJ)
DMTH10H1M7STLW-13

DMTH10H1M7STLW-13

MOSFET BVDSS: 61V~100V POWERDI10

Diodes Incorporated

1,422 -
DMTH10H1M7STLW-13

数据表

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250A (Tc) 10V 2mOhm @ 30A, 10V Surface Mount 4V @ 250µA 147 nC @ 10 V 100 V ±20V 9871 pF @ 50 V - - POWERDI1012-8 - 6W (Ta), 250W (Tc) -55°C ~ 175°C (TJ)
MCTL160N15Y-TP

MCTL160N15Y-TP

N-CHANNEL MOSFET, TOLL-8L

Micro Commercial Co

3,975 -
MCTL160N15Y-TP

数据表

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 160A (Tc) 6V, 10V 6.5mOhm @ 30A, 10V Surface Mount 4V @ 250µA 157 nC @ 10 V 150 V ±25V 9440 pF @ 75 V - - TOLL-8L - 357W (Tj) -55°C ~ 150°C (TJ)
NVH4L110N65S3F

NVH4L110N65S3F

SUPERFET3 FRFET AUTOMOTIVE 110MO

onsemi

448 -
NVH4L110N65S3F

数据表

SuperFET® III, FRFET® TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 110mOhm @ 15A, 10V Through Hole 5V @ 740µA 59 nC @ 10 V 650 V ±30V 2530 pF @ 400 V - - TO-247-4L - 240W (Tc) -55°C ~ 150°C (TJ)
STH60N099DM9-2AG

STH60N099DM9-2AG

MOSFET N-CH 600V 29A D2PAK

STMicroelectronics

3,248 -
STH60N099DM9-2AG

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 27A (Tc) 10V 99mOhm @ 13.5A, 10V Surface Mount 4.5V @ 250µA 44 nC @ 10 V 600 V ±30V 2140 pF @ 400 V - - TO-263 (D2PAK) - 179W (Tc) -55°C ~ 150°C (TJ)
SIJK140E-T1-GE3

SIJK140E-T1-GE3

N-CHANNEL 40 V (D-S) 175 C MOSFE

Vishay Siliconix

1,500 -
SIJK140E-T1-GE3

数据表

TrenchFET® Gen V 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 140A (Ta), 795A (Tc) 10V 0.47mOhm @ 20A, 10V Surface Mount 3.5V @ 250µA 470 nC @ 10 V 40 V ±20V 18510 pF @ 20 V - - PowerPAK®10 x 12 - 17W (Ta), 536W (Tc) -55°C ~ 175°C (TJ)
R8019KNXC7G

R8019KNXC7G

800V 19A, TO-220FM, HIGH-SPEED S

Rohm Semiconductor

1,000 -
R8019KNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 265mOhm @ 9.5A, 10V Through Hole 4.5V @ 7mA 65 nC @ 10 V 800 V ±20V 2100 pF @ 100 V - - TO-220FM - 83W (Tc) 150°C (TJ)
HUFA76639P3

HUFA76639P3

MOSFET N-CH 100V 51A TO220-3

onsemi

6,974 -
HUFA76639P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 51A (Tc) 4.5V, 10V 26mOhm @ 51A, 10V Through Hole 3V @ 250µA 86 nC @ 10 V 100 V ±16V 2400 pF @ 25 V - - TO-220-3 - 180W (Tc) -55°C ~ 175°C (TJ)
TK8A45DA(STA4,Q,M)

TK8A45DA(STA4,Q,M)

MOSFET N-CH 450V 7.5A TO220SIS

Toshiba Semiconductor and Storage

5,706 -
TK8A45DA(STA4,Q,M)

数据表

π-MOSVII TO-220-3 Full Pack Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 7.5A (Tc) - - Through Hole - - 450 V - - - - TO-220SIS - - -
TSM210N06CZ C0G

TSM210N06CZ C0G

MOSFET N-CHANNEL 60V 210A TO220

Taiwan Semiconductor Corporation

5,611 -
TSM210N06CZ C0G

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 210A (Tc) 10V 3.1mOhm @ 90A, 10V Through Hole 4V @ 250µA 160 nC @ 10 V 60 V ±20V 7900 pF @ 30 V - - TO-220 - 250W (Tc) -55°C ~ 150°C (TJ)
DMTH3M70LPSW-13

DMTH3M70LPSW-13

LINEAR IC

Diodes Incorporated

8,936 -
DMTH3M70LPSW-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 61A (Ta), 150A (Tc) 4.5V, 10V 0.55mOhm @ 20A, 10V Surface Mount, Wettable Flank 3V @ 250µA 152.7 nC @ 10 V 30 V ±20V 11112 pF @ 15 V - - PowerDI5060-8 (Type UX) - 2.13W -55°C ~ 175°C (TJ)
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