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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
GS-065-004-6-L-MR GS-065-004-6-L-MR Infineon Technologies Canada Inc.	357	-	询价单	数据表	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	4.6A (Tc)	6V	455mOhm @ 1.2A, 6V	Surface Mount	2.6V @ 1mA	0.8 nC @ 6 V	700 V	+7V, -10V	26 pF @ 400 V	-	-	8-PDFN (5x6)	-	-	-55°C ~ 150°C (TJ)
IPDQ65R099CFD7XTMA1 HIGH POWER_NEW Infineon Technologies	750	-	询价单	数据表	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	29A (Tc)	10V	99mOhm @ 9.7A, 10V	Surface Mount	4.5V @ 480µA	39 nC @ 10 V	650 V	±20V	1942 pF @ 400 V	-	-	PG-HDSOP-22-1	-	186W (Tc)	-55°C ~ 150°C (TJ)
DMTH10H2M5STLW-13 MOSFET BVDSS: 61V~100V POWERDI10 Diodes Incorporated	1,257	-	询价单	数据表	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	215A (Tc)	10V	2.5mOhm @ 30A, 10V	Surface Mount	4V @ 250µA	124.4 nC @ 10 V	100 V	±20V	8450 pF @ 50 V	-	-	POWERDI1012-8	-	5.8W (Ta), 230.8W (Tc)	-55°C ~ 175°C (TJ)
PJL9412_R2_00001 30V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	9,202	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	10A (Ta)	4.5V, 10V	10mOhm @ 6A, 10V	Surface Mount	2.5V @ 250µA	6.9 nC @ 4.5 V	30 V	±20V	781 pF @ 15 V	-	-	8-SOP	-	2.1W (Ta)	-55°C ~ 150°C (TJ)
SIHP17N80E-GE3 MOSFET N-CH 800V 15A TO220AB Vishay Siliconix	1,000	-	询价单	数据表	E	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	290mOhm @ 8.5A, 10V	Through Hole	4V @ 250µA	122 nC @ 10 V	800 V	±30V	2408 pF @ 100 V	-	-	TO-220AB	-	208W (Tc)	-55°C ~ 150°C (TJ)
PJD80N03_L2_00001 30V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	4,029	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	15A (Ta), 80A (Tc)	4.5V, 10V	6mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	12 nC @ 4.5 V	30 V	±20V	1323 pF @ 25 V	-	-	TO-252AA	-	2W (Ta), 55W (Tc)	-55°C ~ 150°C (TJ)
SPI21N50C3XKSA1 MOSFET N-CH 560V 21A TO262-3 Infineon Technologies	940	-	询价单	数据表	CoolMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	10V	190mOhm @ 13.1A, 10V	Through Hole	3.9V @ 1mA	95 nC @ 10 V	560 V	±20V	2400 pF @ 25 V	-	-	PG-TO262-3-1	-	208W (Tc)	-55°C ~ 150°C (TJ)
IPA65R150CFDXKSA2 MOSFET N-CH 650V 22.4A TO220 Infineon Technologies	494	-	询价单	数据表	CoolMOS™ CFD2	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	22.4A (Tc)	10V	150mOhm @ 9.3A, 10V	Through Hole	4.5V @ 900µA	86 nC @ 10 V	650 V	±20V	2340 pF @ 100 V	-	-	PG-TO220-FP	-	34.7W (Tc)	-55°C ~ 150°C (TJ)
IRF7469 MOSFET N-CH 40V 9A 8SO Infineon Technologies	6,539	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	9A (Ta)	4.5V, 10V	17mOhm @ 9A, 10V	Surface Mount	3V @ 250µA	23 nC @ 4.5 V	40 V	±20V	2000 pF @ 20 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
SIHA150N60E-GE3 E SERIES POWER MOSFET THIN-LEAD Vishay Siliconix	2,000	-	询价单	数据表	E	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	10V	155mOhm @ 10A, 10V	Through Hole	5V @ 250µA	36 nC @ 10 V	600 V	±30V	1514 pF @ 100 V	-	-	TO-220 Full Pack	-	179W (Tc)	-55°C ~ 150°C (TJ)
S1M1000170D MOSFET SILICON CARBIDE SIC 1700V SMC Diode Solutions	290	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	5.2A (Tc)	20V	1.3Ohm @ 2A, 20V	Through Hole	4V @ 500µA	10 nC @ 20 V	1700 V	+25V, -10V	160 pF @ 1000 V	-	-	TO-247AD	-	81W (Tc)	-55°C ~ 175°C (TJ)
MSJU05N90A-TP Interface Micro Commercial Co	2,609	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	5A	10V	1.49Ohm @ 2.5A, 10V	Surface Mount	3.5V @ 250µA	13.6 nC @ 10 V	900 V	±30V	474 pF @ 25 V	-	-	TO-252 (DPAK)	-	83W (Tc)	-55°C ~ 150°C
SIHA22N60AE-GE3 N-CHANNEL 600V Vishay Siliconix	979	-	询价单	数据表	E	TO-220-3 Full Pack	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	10V	180mOhm @ 11A, 10V	Through Hole	4V @ 250µA	96 nC @ 10 V	600 V	±30V	1451 pF @ 100 V	-	-	TO-220 Full Pack	-	33W (Tc)	-55°C ~ 150°C (TJ)
IRF630STRR MOSFET N-CH 200V 9A D2PAK Vishay Siliconix	7,427	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	10V	400mOhm @ 5.4A, 10V	Surface Mount	4V @ 250µA	43 nC @ 10 V	200 V	±20V	800 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3W (Ta), 74W (Tc)	-55°C ~ 150°C (TJ)
IRFIBF30GPBF MOSFET N-CH 900V 1.9A TO220-3 Vishay Siliconix	888	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1.9A (Tc)	10V	3.7Ohm @ 1.1A, 10V	Through Hole	4V @ 250µA	78 nC @ 10 V	900 V	±20V	1200 pF @ 25 V	-	-	TO-220-3	-	35W (Tc)	-55°C ~ 150°C (TJ)
IPP023N08N5AKSA1 MOSFET N-CH 80V 120A TO220-3 Infineon Technologies	352	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	6V, 10V	2.3mOhm @ 100A, 10V	Through Hole	3.8V @ 208µA	166 nC @ 10 V	80 V	±20V	12100 pF @ 40 V	-	-	PG-TO220-3	-	300W (Tc)	-55°C ~ 175°C (TJ)
AONS34304C N Alpha & Omega Semiconductor Inc.	3,309	-	询价单	数据表	-	8-PowerSMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	84A (Ta), 200A (Tc)	6.5V, 10V	0.68mOhm @ 20A, 10V	Surface Mount	2.2V @ 250µA	340 nC @ 10 V	30 V	±20V	11200 pF @ 15 V	-	-	8-DFN (5x6)	-	7.3W (Ta), 208W (Tc)	-55°C ~ 150°C (TJ)
IQDH35N03LM5ATMA1 TRENCH <= 40V Infineon Technologies	4,823	-	询价单	数据表	OptiMOS™ 5	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	66A (Ta), 700A (Tc)	4.5V, 10V	0.35mOhm @ 50A, 10V	Surface Mount	2V @ 1.46mA	262 nC @ 10 V	30 V	±20V	18000 pF @ 15 V	-	-	PG-TSON-8-9	-	2.5W (Ta), 278W (Tc)	-55°C ~ 150°C (TJ)
AON6154 MOSFET N-CHANNEL 45V 100A 8DFN Alpha & Omega Semiconductor Inc.	8,266	-	询价单	数据表	-	8-PowerSMD, Flat Leads	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	4.5V, 10V	1.5mOhm @ 20A, 10V	Surface Mount	2.4V @ 250µA	120 nC @ 10 V	45 V	±20V	6575 pF @ 22.5 V	-	-	8-DFN (5x6)	-	125W (Tc)	-55°C ~ 150°C (TJ)
DMTH4M70SPGWQ-13 MOSFET BVDSS: 31V~40V POWERDI808 Diodes Incorporated	4,692	-	询价单	数据表	-	SOT-1235	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	460A (Tc)	10V	0.7mOhm @ 25A, 10V	Surface Mount	4V @ 250µA	117.1 nC @ 10 V	40 V	±20V	10053 pF @ 20 V	AEC-Q101	-	PowerDI8080-5	Automotive	5.6W (Ta), 428W (Tc)	-55°C ~ 175°C (TJ)

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