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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
PSMN3R0-60BS,118 MOSFET N-CH 60V 100A D2PAK Nexperia USA Inc.	3,875	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	3.2mOhm @ 25A, 10V	Surface Mount	4V @ 1mA	130 nC @ 10 V	60 V	±20V	8079 pF @ 30 V	-	-	D2PAK	-	306W (Tc)	-55°C ~ 175°C (TJ)
SIHP23N60E-BE3 N-CHANNEL 600V Vishay Siliconix	994	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	23A (Tc)	10V	158mOhm @ 12A, 10V	Through Hole	4V @ 250µA	95 nC @ 10 V	600 V	±30V	2418 pF @ 100 V	-	-	TO-220AB	-	227W (Tc)	-55°C ~ 150°C (TJ)
RFD10P03LSM MOSFET P-CH 30V 10A TO252-3 onsemi	4,185	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	10A (Tc)	-	200mOhm @ 10A, 5V	Surface Mount	2V @ 250µA	30 nC @ 10 V	30 V	-	1035 pF @ 25 V	-	-	TO-252AA	-	-	-
AONS62614 N Alpha & Omega Semiconductor Inc.	4,788	-	询价单	数据表	AlphaSGT™	8-PowerSMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	37A (Ta), 100A (Tc)	4.5V, 10V	2.5mOhm @ 20A, 10V	Surface Mount	2.2V @ 250µA	90 nC @ 10 V	60 V	±20V	3660 pF @ 30 V	-	-	8-DFN (5x6)	-	6.2W (Ta), 119W (Tc)	-55°C ~ 150°C (TJ)
IRL520L MOSFET N-CH 100V 9.2A TO262-3 Vishay Siliconix	9,386	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.2A (Tc)	4V, 5V	270mOhm @ 5.5A, 5V	Through Hole	2V @ 250µA	12 nC @ 5 V	100 V	±10V	490 pF @ 25 V	-	-	TO-262-3	-	60W (Tc)	-55°C ~ 175°C (TJ)
IPP040N06N3GHKSA1 MOSFET N-CH 60V 90A TO220-3 Infineon Technologies	6,566	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	10V	4mOhm @ 90A, 10V	Through Hole	4V @ 90µA	98 nC @ 10 V	60 V	±20V	11000 pF @ 30 V	-	-	PG-TO220-3	-	188W (Tc)	-55°C ~ 175°C (TJ)
AOW482 MOSFET N-CH 80V 11A/105A TO262 Alpha & Omega Semiconductor Inc.	2,673	-	询价单	数据表	SDMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11A (Ta), 105A (Tc)	7V, 10V	7.2mOhm @ 20A, 10V	Through Hole	3.7V @ 250µA	81 nC @ 10 V	80 V	±25V	4870 pF @ 40 V	-	-	TO-262	-	2.1W (Ta), 333W (Tc)	-55°C ~ 175°C (TJ)
STP16N65M2 MOSFET N-CH 650V 11A TO220 STMicroelectronics	7,666	-	询价单	数据表	MDmesh™ M2	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	360mOhm @ 5.5A, 10V	Through Hole	4V @ 250µA	19.5 nC @ 10 V	650 V	±25V	718 pF @ 100 V	-	-	TO-220	-	110W (Tc)	-55°C ~ 150°C (TJ)
IPB80N06S2L-H5 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	4,311	-	询价单	数据表	OptiMOS™ 3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	4.7mOhm @ 80A, 10V	Surface Mount	2V @ 250µA	190 nC @ 10 V	55 V	±20V	5000 pF @ 25 V	-	-	PG-TO263-3-2	-	300W (Tc)	-55°C ~ 175°C (TJ)
AUIRFR2905ZTRL MOSFET N-CH 55V 42A DPAK Infineon Technologies	4,559	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	10V	14.5mOhm @ 36A, 10V	Surface Mount	4V @ 250µA	44 nC @ 10 V	55 V	±20V	1380 pF @ 25 V	-	-	TO-252AA (DPAK)	-	110W (Tc)	-55°C ~ 175°C (TJ)
IRF7607 MOSFET N-CH 20V 6.5A MICRO8 Infineon Technologies	7,862	-	询价单	数据表	HEXFET®	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	6.5A (Ta)	2.5V, 4.5V	30mOhm @ 6.5A, 4.5V	Surface Mount	1.2V @ 250µA	22 nC @ 5 V	20 V	±12V	1310 pF @ 15 V	-	-	Micro8™	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
IRF7326D2 MOSFET P-CH 30V 3.6A 8SO Infineon Technologies	7,634	-	询价单	数据表	FETKY™	8-SOIC (0.154", 3.90mm Width)	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	3.6A (Ta)	4.5V, 10V	100mOhm @ 1.8A, 10V	Surface Mount	1V @ 250µA	25 nC @ 10 V	30 V	±20V	440 pF @ 25 V	-	Schottky Diode (Isolated)	8-SO	-	2W (Ta)	-55°C ~ 150°C (TJ)
IRFZ48ZPBF MOSFET N-CH 55V 61A TO220AB Infineon Technologies	4,585	-	询价单	数据表	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	61A (Tc)	10V	11mOhm @ 37A, 10V	Through Hole	4V @ 250µA	64 nC @ 10 V	55 V	±20V	1720 pF @ 25 V	-	-	TO-220AB	-	91W (Tc)	-55°C ~ 175°C (TJ)
RJ1P04BBHTL1 NCH 100V 40A, TO-263AB, POWER MO Rohm Semiconductor	796	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	6V, 10V	8.8mOhm @ 40A, 10V	Surface Mount	4V @ 1mA	38 nC @ 10 V	100 V	±20V	2410 pF @ 50 V	-	-	TO-263AB	-	89W (Tc)	150°C (TJ)
BUK7Y1R4-40HX BUK7Y1R4-40H/SOT669/LFPAK Nexperia USA Inc.	385	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	190A (Tc)	-	-	-	-	-	-	+20V, -10V	-	AEC-Q101	-	-	Automotive	395W (Tc)	-
IRFB4227PBFXKMA1 TRENCH >=100V Infineon Technologies	876	-	询价单	数据表	HEXFET®	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	65A (Tc)	10V	24mOhm @ 46A, 10V	Through Hole	5V @ 250µA	98 nC @ 10 V	200 V	±30V	4600 pF @ 25 V	-	-	TO-220AB	-	330W (Tc)	-40°C ~ 175°C (TJ)
NTP185N60S5H MOSFET N-CH 600V 15A TO220-3 onsemi	770	-	询价单	数据表	SuperFET® V	TO-220-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	185mOhm @ 7.5A, 10V	Through Hole	4.3V @ 1.4mA	25 nC @ 10 V	600 V	±30V	1350 pF @ 400 V	-	-	TO-220-3	-	116W (Tc)	-55°C ~ 150°C (TJ)
IPL60R140CFD7AUMA1 HIGH POWER_NEW Infineon Technologies	2,975	-	询价单	数据表	-	4-PowerTSFN	Tape & Reel (TR)	Active	-	-	18A (Tc)	-	-	Surface Mount	-	-	-	-	-	-	-	PG-VSON-4	-	-	-
RX3P10BBHC16 NCH 100V 100A, TO-220AB, POWER M Rohm Semiconductor	995	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	6V, 10V	3.3mOhm @ 90A, 10V	Through Hole	4V @ 1mA	135 nC @ 10 V	100 V	±20V	8600 pF @ 50 V	-	-	TO-220AB	-	189W (Tc)	150°C (TJ)
MCBS220N04Y-TP N-CHANNEL MOSFET,TO-263-7 Micro Commercial Co	1,600	-	询价单	数据表	-	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	220A (Tc)	6V, 10V	1.1mOhm @ 20A, 10V	Surface Mount	4.5V @ 250µA	132 nC @ 10 V	40 V	±20V	7967 pF @ 25 V	-	-	TO-263-7	-	188W (Tj)	-55°C ~ 175°C (TJ)

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