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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
R6022YNZ4C13 NCH 600V 22A, TO-247, POWER MOSF Rohm Semiconductor	600	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	22A (Tc)	10V, 12V	165mOhm @ 6.5A, 12V	Through Hole	6V @ 1.8mA	33 nC @ 10 V	600 V	±30V	1400 pF @ 100 V	-	-	TO-247G	-	205W (Tc)	150°C (TJ)
DKI06261 MOSFET N-CH 60V 25A TO252 Sanken Electric USA Inc.	4,616	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	25A (Tc)	4.5V, 10V	21.2mOhm @ 12.5A, 10V	Surface Mount	2.5V @ 250µA	16 nC @ 10 V	60 V	±20V	1050 pF @ 25 V	-	-	TO-252	-	32W (Tc)	150°C (TJ)
IAUA210N10S5N024AUMA1 MOSFET_(75V 120V( PG-HSOF-5 Infineon Technologies	3,600	-	询价单	数据表	OptiMOS™	5-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	210A (Tj)	6V, 10V	2.4mOhm @ 100A, 10V	Surface Mount	3.8V @ 150µA	119 nC @ 10 V	100 V	±20V	8696 pF @ 50 V	-	-	PG-HSOF-5-4	-	238W (Tc)	-55°C ~ 175°C (TJ)
DI280N10TL MOSFET TOLL N 100V 0.002OHM 175C Diotec Semiconductor	1,892	-	询价单	数据表	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	280A (Tc)	10V	2mOhm @ 50A, 10V	Surface Mount	4.2V @ 250µA	122 nC @ 10 V	100 V	±20V	8150 pF @ 50 V	-	-	TOLL	-	425mW (Tc)	-55°C ~ 175°C (TJ)
IPP039N10N5AKSA1 MOSFET N-CH 100V 100A TO220-3 Infineon Technologies	500	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	6V, 10V	3.9mOhm @ 50A, 10V	Through Hole	3.8V @ 125µA	95 nC @ 10 V	100 V	±20V	7000 pF @ 50 V	-	-	PG-TO220-3-1	-	188W (Tc)	-55°C ~ 175°C (TJ)
PJD75N04V-AU_L2_002A1 40V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	3,000	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	28.2A (Ta), 181A (Tc)	7V, 10V	2.1mOhm @ 20A, 10V	Surface Mount	3.5V @ 50µA	63 nC @ 10 V	40 V	±20V	4691 pF @ 25 V	AEC-Q101	-	TO-252AA	Automotive	3W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)
DKI10751 MOSFET N-CH 100V 15A TO252 Sanken Electric USA Inc.	6,732	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	4.5V, 10V	70.4mOhm @ 7.5A, 10V	Surface Mount	2.5V @ 250µA	15.8 nC @ 10 V	100 V	±20V	1050 pF @ 25 V	-	-	TO-252	-	32W (Tc)	150°C (TJ)
PJD80N04S-AU_L2_002A1 40V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	3,000	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	28A (Ta), 190A (Tc)	4.5V, 10V	2.1mOhm @ 20A, 10V	Surface Mount	2.3V @ 50µA	75 nC @ 10 V	40 V	±20V	4973 pF @ 25 V	AEC-Q101	-	TO-252AA	Automotive	3W (Ta), 136W (Tc)	-55°C ~ 175°C (TJ)
DMT69M8LPS-13 MOSFET N-CHA 60V 10.2A POWERDI Diodes Incorporated	9,814	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	10.2A (Ta), 70A (Tc)	4.5V, 10V	12mOhm @ 13.5A, 10V	Surface Mount	2V @ 250µA	33.5 nC @ 10 V	60 V	±16V	1925 pF @ 30 V	AEC-Q101	-	PowerDI5060-8	Automotive	2.3W (Ta), 113W (Tc)	-55°C ~ 150°C (TJ)
NTMJS0D9N04CTWG MOSFET N-CH 40V 52A/342A 8LFPAK onsemi	2,988	-	询价单	数据表	-	SOT-1205, 8-LFPAK56	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	52A (Ta), 342A (Tc)	10V	0.81mOhm @ 50A, 10V	Surface Mount	4V @ 250µA	117 nC @ 10 V	40 V	20V	7400 pF @ 20 V	-	-	8-LFPAK	-	4.2W (Ta), 180W (Tc)	-55°C ~ 175°C (TJ)
NVD5C632NLT4G MOSFET N-CH 60V 29A/155A DPAK onsemi	1,786	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	29A (Ta), 155A (Tc)	4.5V, 10V	2.5mOhm @ 50A, 10V	Surface Mount	2.1V @ 250µA	78 nC @ 10 V	60 V	±20V	5700 pF @ 25 V	AEC-Q101	-	DPAK	Automotive	4W (Ta), 115W (Tc)	-55°C ~ 175°C (TJ)
SQ7415AENW-T1_GE3 MOSFET P-CH 60V 16A PPAK1212-8 Vishay Siliconix	2,873	-	询价单	数据表	-	PowerPAK® 1212-8	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	16A (Tc)	4.5V, 10V	65mOhm @ 5.7A, 10V	Surface Mount	2.5V @ 250µA	38 nC @ 10 V	60 V	±20V	1385 pF @ 25 V	-	-	PowerPAK® 1212-8	-	53W (Tc)	-55°C ~ 175°C (TJ)
GAN140-650FBEZ 650 V, 140 MOHM GALLIUM NITRIDE Nexperia USA Inc.	2,327	-	询价单	数据表	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	17A (Tc)	6V	140mOhm @ 5A, 6V	Surface Mount, Wettable Flank	2.5V @ 17.2mA	3.5 nC @ 6 V	650 V	+7V, -1.4V	125 pF @ 400 V	-	-	DFN5060-5	-	113W (Tc)	-55°C ~ 150°C (TJ)
PJD40N06A_L2_00001 60V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	6,922	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	4.5V, 10V	17mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	13.5 nC @ 4.5 V	60 V	±20V	1574 pF @ 25 V	-	-	TO-252AA	-	60W (Tc)	-55°C ~ 150°C (TJ)
PJD16P06A_L2_00001 60V P-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	7,994	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	5A (Ta), 16A (Tc)	4.5V, 10V	48mOhm @ 8A, 10V	Surface Mount	2.5V @ 250µA	22 nC @ 10 V	60 V	±20V	1256 pF @ 30 V	-	-	TO-252AA	-	2W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)
AUIRF7736M2TR MOSFET N-CH 40V 22A DIRECTFET Infineon Technologies	3,844	-	询价单	数据表	HEXFET®	DirectFET™ Isometric M4	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	22A (Ta), 108A (Tc)	10V	3mOhm @ 65A, 10V	Surface Mount	4V @ 150µA	108 nC @ 10 V	40 V	±20V	4267 pF @ 25 V	-	-	DirectFET™ Isometric M4	-	2.5W (Ta), 63W (Tc)	-55°C ~ 175°C (TJ)
IPA90R500C3XKSA2 MOSFET N-CH 900V 11A TO220 Infineon Technologies	1,915	-	询价单	数据表	CoolMOS™	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	500mOhm @ 6.6A, 10V	Through Hole	3.5V @ 740µA	68 nC @ 10 V	900 V	±20V	1700 pF @ 100 V	-	-	PG-TO220-FP	-	34W (Tc)	-55°C ~ 150°C (TJ)
TSM60NE180CIT C0G 600V, 13A, SINGLE N-CHANNEL HIGH Taiwan Semiconductor Corporation	2,000	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V, 12V	165mOhm @ 4.3A, 12V	Through Hole	6V @ 1.8mA	34 nC @ 10 V	600 V	±30V	1417 pF @ 300 V	-	-	ITO-220TL	-	63W (Tc)	-55°C ~ 150°C (TJ)
TSM600NA25CIT C0G 250V 22A SINGLE N-CHAN Taiwan Semiconductor Corporation	3,897	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	22A (Tc)	10V	60mOhm @ 11A, 10V	Through Hole	4.2V @ 250µA	71 nC @ 10 V	250 V	±30V	3086 pF @ 125 V	-	-	ITO-220TL	-	78W (Tc)	-55°C ~ 150°C (TJ)
IPP020N06NAKSA1 MOSFET N-CH 60V 29A/120A TO220-3 Infineon Technologies	662	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	29A (Ta), 120A (Tc)	6V, 10V	2mOhm @ 100A, 10V	Through Hole	2.8V @ 143µA	106 nC @ 10 V	60 V	±20V	7800 pF @ 30 V	-	-	PG-TO220-3	-	3W (Ta), 214W (Tc)	-55°C ~ 175°C (TJ)

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