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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
DMTH8003SPSW-13 LINEAR IC Diodes Incorporated	9,243	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	105A (Tc)	6V, 10V	3.9mOhm @ 30A, 10V	Surface Mount, Wettable Flank	4V @ 250µA	136 nC @ 10 V	80 V	±20V	9081 pF @ 40 V	-	-	PowerDI5060-8 (Type UX)	-	3.75W (Ta), 99W (Tc)	-55°C ~ 175°C (TJ)
DMT8003SPSW-13 LINEAR IC Diodes Incorporated	9,142	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	6V, 10V	3.9mOhm @ 30A, 10V	Surface Mount, Wettable Flank	4V @ 250µA	136 nC @ 10 V	80 V	±20V	9081 pF @ 40 V	-	-	PowerDI5060-8 (Type UX)	-	3.1W	-55°C ~ 150°C (TJ)
IQDH45N04LM6ATMA1 TRENCH <= 40V Infineon Technologies	4,610	-	询价单	数据表	OptiMOS™ 6	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60A (Ta), 637A (Tc)	4.5V, 10V	0.45mOhm @ 50A, 10V	Surface Mount	2.3V @ 1.449mA	172 nC @ 10 V	40 V	±20V	12000 pF @ 20 V	-	-	PG-TSON-8-9	-	3W (Ta), 333W (Tc)	-55°C ~ 175°C (TJ)
R6014YNX3C16 NCH 600V 14A, TO-220AB, POWER MO Rohm Semiconductor	988	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	10V, 12V	260mOhm @ 5A, 12V	Through Hole	6V @ 1.4mA	20 nC @ 10 V	600 V	±30V	890 pF @ 100 V	-	-	TO-220AB	-	132W (Tc)	150°C (TJ)
RX3G07BBGC16 NCH 40V 70A, TO-220AB, POWER MO Rohm Semiconductor	930	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	4.5V, 10V	3mOhm @ 70A, 10V	Through Hole	2.5V @ 1mA	56 nC @ 10 V	40 V	±20V	3540 pF @ 20 V	-	-	TO-220AB	-	89W (Tc)	150°C (TJ)
NTMJS0D7N03CGTWG WIDE SOA onsemi	2,568	-	询价单	数据表	-	SOT-1205, 8-LFPAK56	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	59A (Ta), 410A (Tc)	10V	0.65mOhm @ 30A, 10V	Surface Mount	2.2V @ 280µA	147 nC @ 10 V	30 V	±20V	12300 pF @ 15 V	-	-	8-LFPAK	-	4W (Ta), 188W (Tc)	-55°C ~ 175°C (TJ)
SIHP150N60E-GE3 E SERIES POWER MOSFET TO-220AB, Vishay Siliconix	1,985	-	询价单	数据表	E	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	22A (Tc)	10V	155mOhm @ 10A, 10V	Through Hole	5V @ 250µA	36 nC @ 10 V	600 V	±30V	1514 pF @ 100 V	-	-	TO-220AB	-	179W (Tc)	-55°C ~ 150°C (TJ)
NVMFWS0D5N04XMT1G 40V T10M IN S08FL GEN 2 PACKAGE onsemi	1,280	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	423A (Tc)	10V	0.52mOhm @ 50A, 10V	Surface Mount	3.5V @ 240µA	100 nC @ 10 V	40 V	±20V	6250 pF @ 25 V	AEC-Q101	-	8-DFN (5x6)	Automotive	163W (Tc)	-55°C ~ 175°C (TJ)
RX3L07BBGC16 NCH 60V 70A, TO-220AB, POWER MO Rohm Semiconductor	920	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	4.5V, 10V	4.6mOhm @ 70A, 10V	Through Hole	2.5V @ 1mA	47 nC @ 10 V	60 V	±20V	2950 pF @ 30 V	-	-	TO-220AB	-	89W (Tc)	150°C (TJ)
IPB120N10S403ATMA1 MOSFET N-CH 100V 120A D2PAK Infineon Technologies	728	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	3.5mOhm @ 100A, 10V	Surface Mount	3.5V @ 180µA	140 nC @ 10 V	100 V	±20V	10120 pF @ 25 V	AEC-Q101	-	PG-TO263-3	Automotive	250W (Tc)	-55°C ~ 175°C (TJ)
IPT65R125CFD7XTMA1 HIGH POWER_NEW Infineon Technologies	2,000	-	询价单	数据表	-	8-PowerSFN	Tape & Reel (TR)	Active	-	-	-	-	-	Surface Mount	-	-	650 V	-	-	-	-	PG-HSOF-8-3	-	-	-
IPL60R115CFD7AUMA1 HIGH POWER_NEW Infineon Technologies	2,500	-	询价单	数据表	-	4-PowerTSFN	Tape & Reel (TR)	Active	-	-	22A (Tc)	-	-	Surface Mount	-	-	-	-	-	-	-	PG-VSON-4	-	-	-
IPTG025N08NM5ATMA1 TRENCH 40<-<100V PG-HSOG-8 Infineon Technologies	1,800	-	询价单	数据表	OptiMOS™	8-PowerSMD, Gull Wing	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	28A (Ta), 184A (Tc)	6V, 10V	2.5mOhm @ 150A 10V	Surface Mount	3.8V @ 108µA	87 nC @ 10 V	80 V	±20V	6500 pF @ 40 V	-	-	PG-HSOG-8-1	-	3.8W (Ta), 167W (Tc)	-55°C ~ 175°C (TJ)
BUK7J1R0-40HX BUK7J1R0-40H/SOT1023/4 LEADS Nexperia USA Inc.	2,079	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	220A (Tc)	-	-	-	-	-	-	+20V, -10V	-	AEC-Q101	-	-	Automotive	-	-
IPA60R120C7XKSA1 MOSFET N-CH 600V 11A TO220 Infineon Technologies	614	-	询价单	数据表	CoolMOS™ C7	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	120mOhm @ 7.8A, 10V	Through Hole	4V @ 390µA	34 nC @ 10 V	600 V	±20V	1500 pF @ 400 V	-	-	PG-TO220-FP	-	32W (Tc)	-55°C ~ 150°C (TJ)
IPB60R125CFD7ATMA1 MOSFET N-CH 600V 18A TO263-3 Infineon Technologies	345	-	询价单	数据表	CoolMOS™ CFD7	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	125mOhm @ 7.8A, 10V	Surface Mount	4.5V @ 390µA	36 nC @ 10 V	600 V	±20V	1503 pF @ 400 V	-	-	PG-TO263-3-2	-	92W (Tc)	-55°C ~ 150°C (TJ)
FQAF11N90C MOSFET N-CH 900V 7A TO3PF onsemi	292	-	询价单	数据表	QFET®	TO-3P-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	1.1Ohm @ 3.5A, 10V	Through Hole	5V @ 250µA	80 nC @ 10 V	900 V	±30V	3290 pF @ 25 V	-	-	TO-3PF	-	120W (Tc)	-55°C ~ 150°C (TJ)
NTMFSS1D3N06CL 60V T6 MAX DIE IN 5X6 SOURCE DOW onsemi	2,980	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	31A (Ta), 243A (Tc)	4.5V, 10V	1.3mOhm @ 50A, 10V	Surface Mount	2V @ 250µA	117 nC @ 10 V	60 V	±20V	8190 pF @ 30 V	-	-	9-TDFN (5x6)	-	2.5W (Ta), 153W (Tc)	-55°C ~ 150°C (TJ)
SIHP155N60EF-GE3 EF SERIES POWER MOSFET WITH FAST Vishay Siliconix	1,995	-	询价单	数据表	EF	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	10V	155mOhm @ 10A, 10V	Through Hole	5V @ 250µA	38 nC @ 10 V	600 V	±20V	1465 pF @ 100 V	-	-	TO-220AB	-	179W (Tc)	-55°C ~ 150°C (TJ)
IQD005N04NM6ATMA1 TRENCH <= 40V Infineon Technologies	4,889	-	询价单	数据表	OptiMOS™ 6	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	58A (Ta), 610A (Tc)	6V, 10V	0.47mOhm @ 50A, 10V	Surface Mount	2.8V @ 1.449mA	163 nC @ 10 V	40 V	±20V	12000 pF @ 20 V	-	-	PG-TSON-8-9	-	3W (Ta), 333W (Tc)	-55°C ~ 175°C (TJ)

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