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场效应晶体管(FETs)、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF7834TRMOSFET N-CH 30V 19A 8SO |
5,403 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 19A (Ta) | 4.5V, 10V | 4.5mOhm @ 19A, 10V | Surface Mount | 2.25V @ 250µA | 44 nC @ 4.5 V | 30 V | ±20V | 3710 pF @ 15 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
AONS66916N |
2,756 | - |
|
数据表 |
AlphaSGT™ | 8-PowerSMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 6V, 10V | 3.6mOhm @ 20A, 10V | Surface Mount | 3.6V @ 250µA | 95 nC @ 10 V | 100 V | ±20V | 5325 pF @ 50 V | - | - | 8-DFN (5x6) | - | 215W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFZ24NSTRLMOSFET N-CH 55V 17A D2PAK |
8,219 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 10V | 70mOhm @ 10A, 10V | Surface Mount | 4V @ 250µA | 20 nC @ 10 V | 55 V | ±20V | 370 pF @ 25 V | - | - | D2PAK | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRFR8403TRLARMA1MOSFET_(20V 40V) |
6,886 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 3.1mOhm @ 76A, 10V | Surface Mount | 3.9V @ 100µA | 99 nC @ 10 V | 40 V | ±20V | 3171 pF @ 25 V | AEC-Q100 | - | PG-TO252-3-901|DPAK | Automotive | 99W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFR3910TRRMOSFET N-CH 100V 16A DPAK |
7,772 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 10V | 115mOhm @ 10A, 10V | Surface Mount | 4V @ 250µA | 44 nC @ 10 V | 100 V | ±20V | 640 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 79W (Tc) | -55°C ~ 175°C (TJ) |
|
TSM60NC196CM2 RNG600V, 28A, SINGLE N-CHANNEL POWE |
2,394 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 28A (Tc) | 10V | 196mOhm @ 9.5A, 10V | Surface Mount | 5V @ 1mA | 39 nC @ 10 V | 600 V | ±20V | 1566 pF @ 300 V | - | - | TO-263AB (D2PAK) | - | 152W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHA155N60EF-GE3E SERIES POWER MOSFET THIN-LEAD |
1,842 | - |
|
数据表 |
EF | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 89mOhm @ 3.7A, 10V | Through Hole | 5V @ 250µA | 38 nC @ 10 V | 600 V | ±20V | 1465 pF @ 100 V | - | - | TO-220 Full Pack | - | 33W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF7203TRMOSFET P-CH 20V 4.3A 8SO |
8,205 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4.3A (Ta) | - | 100mOhm @ 2A, 10V | Surface Mount | - | 40 nC @ 10 V | 20 V | - | 750 pF @ 20 V | - | - | 8-SO | - | - | - |
|
PSMN2R9-100SSEJPOWERMOS ASFETS |
2,000 | - |
|
数据表 |
- | SOT-1235 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 210A (Ta) | 10V | 2.9mOhm @ 25A, 10V | Surface Mount | 3.6V @ 1mA | 188 nC @ 10 V | 100 V | ±20V | 13280 pF @ 50 V | - | - | LFPAK88 (SOT1235) | - | 341W (Ta) | -55°C ~ 175°C (TJ) |
|
MCU50P06YHE3-TPMOSFET |
7,710 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 12mOhm @ 20A, 10V | Surface Mount | 3V @ 250µA | 79 nC @ 10 V | 60 V | ±20V | 4600 pF @ 25 V | AEC-Q101 | - | TO-252 (DPAK) | Automotive | 89W (Tj) | -55°C ~ 150°C (TJ) |
|
PSMN2R5-80SSEJPOWERMOS ASFETS |
1,995 | - |
|
数据表 |
- | SOT-1235 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 190A (Ta) | 10V | 2.5mOhm @ 25A, 10V | Surface Mount | 3.6V @ 1mA | 174 nC @ 10 V | 80 V | ±20V | 13485 pF @ 40 V | - | - | LFPAK88 (SOT1235) | - | 341W (Ta) | -55°C ~ 175°C (TJ) |
|
FCMT360N65S3MOSFET N-CH 650V 10A 4PQFN |
9,699 | - |
|
数据表 |
SuperFET® III | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 10V | 360mOhm @ 5A, 10V | Surface Mount | 4.5V @ 200µA | 18 nC @ 10 V | 650 V | ±30V | 730 pF @ 400 V | - | - | 4-PQFN (8x8) | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
IRLU7821MOSFET N-CH 30V 65A I-PAK |
3,934 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 65A (Tc) | 4.5V, 10V | 10mOhm @ 15A, 10V | Through Hole | 1V @ 250µA | 14 nC @ 4.5 V | 30 V | ±20V | 1030 pF @ 15 V | - | - | IPAK | - | 75W (Tc) | -55°C ~ 175°C (TJ) |
|
ISZ022N06LM6ATMA1TRENCH 40<-<100V |
2,539 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SPA04N80C3XKSA1MOSFET N-CH 800V 4A TO220-FP |
6,895 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 10V | 1.3Ohm @ 2.5A, 10V | Through Hole | 3.9V @ 240µA | 31 nC @ 10 V | 800 V | ±20V | 570 pF @ 100 V | - | - | PG-TO220-3-31 | - | 38W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHFZ48RS-GE3MOSFET N-CH 60V 50A D2PAK |
8,857 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 10V | 18mOhm @ 43A, 10V | Surface Mount | 4V @ 250µA | 110 nC @ 10 V | 60 V | ±20V | 2400 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 190W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF3711STRLPBFMOSFET N-CH 20V 110A D2PAK |
5,603 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 110A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | Surface Mount | 3V @ 250µA | 44 nC @ 4.5 V | 20 V | ±20V | 2980 pF @ 10 V | - | - | D2PAK | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF520NMOSFET N-CH 100V 9.7A TO220AB |
7,442 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9.7A (Tc) | 10V | 200mOhm @ 5.7A, 10V | Through Hole | 4V @ 250µA | 25 nC @ 10 V | 100 V | ±20V | 330 pF @ 25 V | - | - | TO-220AB | - | 48W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF9520NSMOSFET P-CH 100V 6.8A D2PAK |
2,403 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 6.8A (Tc) | 10V | 480mOhm @ 4A, 10V | Surface Mount | 4V @ 250µA | 27 nC @ 10 V | 100 V | ±20V | 350 pF @ 25 V | - | - | D2PAK | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF520NLMOSFET N-CH 100V 9.7A TO262 |
3,690 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9.7A (Tc) | 10V | 200mOhm @ 5.7A, 10V | Through Hole | 4V @ 250µA | 25 nC @ 10 V | 100 V | ±20V | 330 pF @ 25 V | - | - | TO-262 | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) |
