富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRF7834TR

IRF7834TR

MOSFET N-CH 30V 19A 8SO

Infineon Technologies

5,403 -
IRF7834TR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 19A (Ta) 4.5V, 10V 4.5mOhm @ 19A, 10V Surface Mount 2.25V @ 250µA 44 nC @ 4.5 V 30 V ±20V 3710 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
AONS66916

AONS66916

N

Alpha & Omega Semiconductor Inc.

2,756 -
AONS66916

数据表

AlphaSGT™ 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 6V, 10V 3.6mOhm @ 20A, 10V Surface Mount 3.6V @ 250µA 95 nC @ 10 V 100 V ±20V 5325 pF @ 50 V - - 8-DFN (5x6) - 215W (Tc) -55°C ~ 150°C (TJ)
IRFZ24NSTRL

IRFZ24NSTRL

MOSFET N-CH 55V 17A D2PAK

Infineon Technologies

8,219 -
IRFZ24NSTRL

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 70mOhm @ 10A, 10V Surface Mount 4V @ 250µA 20 nC @ 10 V 55 V ±20V 370 pF @ 25 V - - D2PAK - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ)
AUIRFR8403TRLARMA1

AUIRFR8403TRLARMA1

MOSFET_(20V 40V)

Infineon Technologies

6,886 -
AUIRFR8403TRLARMA1

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 3.1mOhm @ 76A, 10V Surface Mount 3.9V @ 100µA 99 nC @ 10 V 40 V ±20V 3171 pF @ 25 V AEC-Q100 - PG-TO252-3-901|DPAK Automotive 99W (Tc) -55°C ~ 175°C (TJ)
IRFR3910TRR

IRFR3910TRR

MOSFET N-CH 100V 16A DPAK

Infineon Technologies

7,772 -
IRFR3910TRR

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 115mOhm @ 10A, 10V Surface Mount 4V @ 250µA 44 nC @ 10 V 100 V ±20V 640 pF @ 25 V - - TO-252AA (DPAK) - 79W (Tc) -55°C ~ 175°C (TJ)
TSM60NC196CM2 RNG

TSM60NC196CM2 RNG

600V, 28A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

2,394 -
TSM60NC196CM2 RNG

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 196mOhm @ 9.5A, 10V Surface Mount 5V @ 1mA 39 nC @ 10 V 600 V ±20V 1566 pF @ 300 V - - TO-263AB (D2PAK) - 152W (Tc) -55°C ~ 150°C (TJ)
SIHA155N60EF-GE3

SIHA155N60EF-GE3

E SERIES POWER MOSFET THIN-LEAD

Vishay Siliconix

1,842 -
SIHA155N60EF-GE3

数据表

EF TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 89mOhm @ 3.7A, 10V Through Hole 5V @ 250µA 38 nC @ 10 V 600 V ±20V 1465 pF @ 100 V - - TO-220 Full Pack - 33W (Tc) -55°C ~ 150°C (TJ)
IRF7203TR

IRF7203TR

MOSFET P-CH 20V 4.3A 8SO

Infineon Technologies

8,205 -
IRF7203TR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4.3A (Ta) - 100mOhm @ 2A, 10V Surface Mount - 40 nC @ 10 V 20 V - 750 pF @ 20 V - - 8-SO - - -
PSMN2R9-100SSEJ

PSMN2R9-100SSEJ

POWERMOS ASFETS

Nexperia USA Inc.

2,000 -
PSMN2R9-100SSEJ

数据表

- SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 210A (Ta) 10V 2.9mOhm @ 25A, 10V Surface Mount 3.6V @ 1mA 188 nC @ 10 V 100 V ±20V 13280 pF @ 50 V - - LFPAK88 (SOT1235) - 341W (Ta) -55°C ~ 175°C (TJ)
MCU50P06YHE3-TP

MCU50P06YHE3-TP

MOSFET

Micro Commercial Co

7,710 -
MCU50P06YHE3-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 12mOhm @ 20A, 10V Surface Mount 3V @ 250µA 79 nC @ 10 V 60 V ±20V 4600 pF @ 25 V AEC-Q101 - TO-252 (DPAK) Automotive 89W (Tj) -55°C ~ 150°C (TJ)
PSMN2R5-80SSEJ

PSMN2R5-80SSEJ

POWERMOS ASFETS

Nexperia USA Inc.

1,995 -
PSMN2R5-80SSEJ

数据表

- SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 190A (Ta) 10V 2.5mOhm @ 25A, 10V Surface Mount 3.6V @ 1mA 174 nC @ 10 V 80 V ±20V 13485 pF @ 40 V - - LFPAK88 (SOT1235) - 341W (Ta) -55°C ~ 175°C (TJ)
FCMT360N65S3

FCMT360N65S3

MOSFET N-CH 650V 10A 4PQFN

onsemi

9,699 -
FCMT360N65S3

数据表

SuperFET® III 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 360mOhm @ 5A, 10V Surface Mount 4.5V @ 200µA 18 nC @ 10 V 650 V ±30V 730 pF @ 400 V - - 4-PQFN (8x8) - 83W (Tc) -55°C ~ 150°C (TJ)
IRLU7821

IRLU7821

MOSFET N-CH 30V 65A I-PAK

Infineon Technologies

3,934 -
IRLU7821

数据表

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 65A (Tc) 4.5V, 10V 10mOhm @ 15A, 10V Through Hole 1V @ 250µA 14 nC @ 4.5 V 30 V ±20V 1030 pF @ 15 V - - IPAK - 75W (Tc) -55°C ~ 175°C (TJ)
ISZ022N06LM6ATMA1

ISZ022N06LM6ATMA1

TRENCH 40<-<100V

Infineon Technologies

2,539 -
ISZ022N06LM6ATMA1

数据表

- - Tape & Reel (TR) Discontinued at Digi-Key - - - - - - - - - - - - - - - - -
SPA04N80C3XKSA1

SPA04N80C3XKSA1

MOSFET N-CH 800V 4A TO220-FP

Infineon Technologies

6,895 -
SPA04N80C3XKSA1

数据表

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 1.3Ohm @ 2.5A, 10V Through Hole 3.9V @ 240µA 31 nC @ 10 V 800 V ±20V 570 pF @ 100 V - - PG-TO220-3-31 - 38W (Tc) -55°C ~ 150°C (TJ)
SIHFZ48RS-GE3

SIHFZ48RS-GE3

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix

8,857 -
SIHFZ48RS-GE3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 18mOhm @ 43A, 10V Surface Mount 4V @ 250µA 110 nC @ 10 V 60 V ±20V 2400 pF @ 25 V - - TO-263 (D2PAK) - 190W (Tc) -55°C ~ 175°C (TJ)
IRF3711STRLPBF

IRF3711STRLPBF

MOSFET N-CH 20V 110A D2PAK

Infineon Technologies

5,603 -
IRF3711STRLPBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 110A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V Surface Mount 3V @ 250µA 44 nC @ 4.5 V 20 V ±20V 2980 pF @ 10 V - - D2PAK - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ)
IRF520N

IRF520N

MOSFET N-CH 100V 9.7A TO220AB

Infineon Technologies

7,442 -
IRF520N

数据表

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 9.7A (Tc) 10V 200mOhm @ 5.7A, 10V Through Hole 4V @ 250µA 25 nC @ 10 V 100 V ±20V 330 pF @ 25 V - - TO-220AB - 48W (Tc) -55°C ~ 175°C (TJ)
IRF9520NS

IRF9520NS

MOSFET P-CH 100V 6.8A D2PAK

Infineon Technologies

2,403 -
IRF9520NS

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete P-Channel MOSFET (Metal Oxide) 6.8A (Tc) 10V 480mOhm @ 4A, 10V Surface Mount 4V @ 250µA 27 nC @ 10 V 100 V ±20V 350 pF @ 25 V - - D2PAK - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ)
IRF520NL

IRF520NL

MOSFET N-CH 100V 9.7A TO262

Infineon Technologies

3,690 -
IRF520NL

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 9.7A (Tc) 10V 200mOhm @ 5.7A, 10V Through Hole 4V @ 250µA 25 nC @ 10 V 100 V ±20V 330 pF @ 25 V - - TO-262 - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户