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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRF7413GTRPBF

IRF7413GTRPBF

MOSFET N-CH 30V 13A 8SO

Infineon Technologies

2,379 -
IRF7413GTRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 13A (Ta) 4.5V, 10V 11mOhm @ 7.3A, 10V Surface Mount 3V @ 250µA 79 nC @ 10 V 30 V ±20V 1800 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
SI4102DY-T1-GE3

SI4102DY-T1-GE3

MOSFET N-CH 100V 3.8A 8SO

Vishay Siliconix

7,552 -
SI4102DY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.8A (Tc) 6V, 10V 158mOhm @ 2.7A, 10V Surface Mount 4V @ 250µA 11 nC @ 10 V 100 V ±20V 370 pF @ 50 V - - 8-SOIC - 2.4W (Ta), 4.8W (Tc) -55°C ~ 150°C (TJ)
SI4409DY-T1-GE3

SI4409DY-T1-GE3

MOSFET P-CH 150V 1.3A 8SO

Vishay Siliconix

4,623 -
SI4409DY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.3A (Tc) 6V, 10V 1.2Ohm @ 500mA, 10V Surface Mount 4V @ 250µA 12 nC @ 10 V 150 V ±20V 332 pF @ 50 V - - 8-SOIC - 2.2W (Ta), 4.6W (Tc) -55°C ~ 150°C (TJ)
SI5433BDC-T1-GE3

SI5433BDC-T1-GE3

MOSFET P-CH 20V 4.8A 1206-8

Vishay Siliconix

6,460 -
SI5433BDC-T1-GE3

数据表

TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4.8A (Ta) 1.8V, 4.5V 37mOhm @ 4.8A, 4.5V Surface Mount 1V @ 250µA 22 nC @ 4.5 V 20 V ±8V - - - 1206-8 ChipFET™ - 1.3W (Ta) -55°C ~ 150°C (TJ)
SIS456DN-T1-GE3

SIS456DN-T1-GE3

MOSFET N-CH 30V 35A PPAK 1212-8

Vishay Siliconix

8,433 -
SIS456DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 5.1mOhm @ 20A, 10V Surface Mount 2.2V @ 250µA 55 nC @ 10 V 30 V ±20V 1800 pF @ 15 V - - PowerPAK® 1212-8 - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
AON7242

AON7242

MOSFET N-CH 40V 30A/50A 8DFN

Alpha & Omega Semiconductor Inc.

4,783 -
AON7242

数据表

- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Ta), 50A (Tc) 4.5V, 10V 3.9mOhm @ 20A, 10V Surface Mount 2.3V @ 250µA 32 nC @ 10 V 40 V ±20V 2365 pF @ 20 V - - 8-DFN-EP (3.3x3.3) - 6.2W (Ta), 83W (Tc) -55°C ~ 150°C (TJ)
TP65H300G4JSGB-TR

TP65H300G4JSGB-TR

GANFET N-CH 650V 9.2A QFN5X6

Transphorm

3,899 -
TP65H300G4JSGB-TR

数据表

SuperGaN® 8-PowerTDFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 9.2A (Tc) 6V 312mOhm @ 6.5A, 6V Surface Mount 2.8V @ 500µA 3.5 nC @ 10 V 650 V ±10V 400 pF @ 400 V - - 8-PQFN (5x6) - 41.6W (Tc) -55°C ~ 150°C (TJ)
TK16V60W5,LVQ

TK16V60W5,LVQ

PB-F POWER MOSFET TRANSISTOR DTM

Toshiba Semiconductor and Storage

2,260 -
TK16V60W5,LVQ

数据表

DTMOSIV 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15.8A (Ta) 10V 245mOhm @ 7.9A, 10V Surface Mount 4.5V @ 790µA 43 nC @ 10 V 600 V ±30V 1350 pF @ 300 V - - 4-DFN-EP (8x8) - 139W (Tc) 150°C
IQD063N15NM5CGATMA1

IQD063N15NM5CGATMA1

TRENCH >=100V

Infineon Technologies

4,998 -
IQD063N15NM5CGATMA1

数据表

OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14.1A (Ta), 148A (Tc) 0V, 10V 6.32mOhm @ 50A, 10V Surface Mount 4.6V @ 159µA 60 nC @ 10 V 150 V ±20V 4700 pF @ 75 V - - PG-TTFN-9-U02 - 2.5W (Ta), 278W (Tc) -55°C ~ 150°C (TJ)
TK14V65W,LQ

TK14V65W,LQ

PB-F POWER MOSFET TRANSISTOR DTM

Toshiba Semiconductor and Storage

2,394 -
TK14V65W,LQ

数据表

DTMOSIV 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13.7A (Ta) 10V 280mOhm @ 6.9A, 10V Surface Mount 3.5V @ 690µA 35 nC @ 10 V 650 V ±30V 1300 pF @ 300 V - - 4-DFN-EP (8x8) - 139W (Tc) 150°C
PSMN2R3-80SSFJ

PSMN2R3-80SSFJ

NEXTPOWER 80/100V MOSFETS

Nexperia USA Inc.

2,000 -
PSMN2R3-80SSFJ

数据表

- SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 240A (Ta) 7V, 10V 2.3mOhm @ 25A, 10V Surface Mount 4V @ 1mA 184 nC @ 10 V 80 V ±20V 12320 pF @ 40 V - - LFPAK88 (SOT1235) - 341W (Ta) -55°C ~ 175°C (TJ)
IAUA250N08S5N018AUMA1

IAUA250N08S5N018AUMA1

MOSFET_(75V 120V( PG-HSOF-5

Infineon Technologies

1,805 -
IAUA250N08S5N018AUMA1

数据表

OptiMOS™ 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250A (Tj) 6V, 10V 1.8mOhm @ 100A, 10V Surface Mount 3.8V @ 150µA 125 nC @ 10 V 80 V ±20V 8715 pF @ 40 V - - PG-HSOF-5-4 - 238W (Tc) -55°C ~ 175°C (TJ)
STMFS5C628NLT1G

STMFS5C628NLT1G

MOSFET N-CH 60V

onsemi

1,500 -
STMFS5C628NLT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active - - - - - Surface Mount - - - - - - - 5-DFN (5x6) (8-SOFL) - - -
STP26N65DM2

STP26N65DM2

MOSFET N-CH 650V 20A TO220

STMicroelectronics

858 -
STP26N65DM2

数据表

MDmesh™ DM2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 190mOhm @ 10A, 10V Through Hole 5V @ 250µA 35.5 nC @ 10 V 650 V ±25V 1480 pF @ 100 V - - TO-220 - 170W (Tc) -55°C ~ 150°C (TJ)
NTMFSS1D5N06CL

NTMFSS1D5N06CL

60V T6 DIE IN 5X6 SOURCE DOWN PA

onsemi

11,838 -
NTMFSS1D5N06CL

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 31A (Ta), 237A (Tc) 4.5V, 10V 1.5mOhm @ 50A, 10V Surface Mount 2V @ 250µA 102.6 nC @ 10 V 60 V ±20V 7526 pF @ 30 V - - 9-TDFN (5x6) - 2.5W (Ta), 144W (Tc) -55°C ~ 150°C (TJ)
TSM190N08CZ C0G

TSM190N08CZ C0G

MOSFET N-CHANNEL 75V 190A TO220

Taiwan Semiconductor Corporation

3,980 -
TSM190N08CZ C0G

数据表

- TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 190A (Tc) 10V 4.2mOhm @ 90A, 10V Through Hole 4V @ 250µA 160 nC @ 10 V 75 V ±20V 8600 pF @ 30 V - - TO-220 - 250W (Tc) -55°C ~ 150°C (TJ)
IPI111N15N3GAKSA1

IPI111N15N3GAKSA1

MOSFET N-CH 150V 83A TO262-3

Infineon Technologies

500 -
IPI111N15N3GAKSA1

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 83A (Tc) 8V, 10V 11.1mOhm @ 83A, 10V Through Hole 4V @ 160µA 55 nC @ 10 V 150 V ±20V 3230 pF @ 75 V - - PG-TO262-3 - 214W (Tc) -55°C ~ 175°C (TJ)
BUK762R6-60E,118

BUK762R6-60E,118

MOSFET N-CH 60V 120A D2PAK

Nexperia USA Inc.

4,795 -
BUK762R6-60E,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 2.6mOhm @ 25A, 10V Surface Mount 4V @ 1mA 140 nC @ 10 V 60 V ±20V 10170 pF @ 25 V AEC-Q101 - D2PAK Automotive 324W (Tc) -55°C ~ 175°C (TJ)
IAUMN10S5N016GAUMA1

IAUMN10S5N016GAUMA1

MOSFET_(75V 120V(

Infineon Technologies

1,965 -
IAUMN10S5N016GAUMA1

数据表

OptiMOS™ 5 4-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 220A (Tj) 6V, 10V 1.6mOhm @ 100A, 10V Surface Mount 3.8V @ 230µA 190 nC @ 10 V 100 V ±20V 13570 pF @ 50 V AEC-Q101 - PG-HSOG-4-1 Automotive 325W (Tc) -55°C ~ 175°C (TJ)
R6049YNX3C16

R6049YNX3C16

NCH 600V 49A, TO-220AB, POWER MO

Rohm Semiconductor

991 -
R6049YNX3C16

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 49A (Tc) 10V, 12V 82mOhm @ 11A, 12V Through Hole 6V @ 2.9mA 65 nC @ 10 V 600 V ±30V 2940 pF @ 100 V - - TO-220AB - 448W (Tc) 150°C (TJ)
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