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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
CDF56G6511N TR13 PBFREE

CDF56G6511N TR13 PBFREE

650V, 11A, N-CHANNEL GAN FET IN

Central Semiconductor Corp

2,325 -
CDF56G6511N TR13 PBFREE

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 11.5A (Tc) 6V 190mOhm @ 3.9A, 6V Surface Mount, Wettable Flank 2.5V @ 12.2mA 2.8 nC @ 6 V 650 V +7V, -1.4V 96 pF @ 400 V - - 8-DFN (5x6) - 1.1W (Ta), 84W (Tc) -55°C ~ 150°C (TJ)
PSMB033N10NS2_R2_00201

PSMB033N10NS2_R2_00201

100V/ 3.3M / TO-263AB FOR INDUST

Panjit International Inc.

1,600 -
PSMB033N10NS2_R2_00201

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SIHB17N80E-GE3

SIHB17N80E-GE3

MOSFET N-CH 800V 15A D2PAK

Vishay Siliconix

888 -
SIHB17N80E-GE3

数据表

E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 290mOhm @ 8.5A, 10V Surface Mount 4V @ 250µA 122 nC @ 10 V 800 V ±30V 2408 pF @ 100 V - - TO-263 (D2PAK) - 208W (Tc) -55°C ~ 150°C (TJ)
IRF7811WTRPBF

IRF7811WTRPBF

MOSFET N-CH 30V 14A 8SO

Infineon Technologies

7,984 -
IRF7811WTRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta) 4.5V 12mOhm @ 15A, 4.5V Surface Mount 1V @ 250µA 33 nC @ 5 V 30 V ±12V 2335 pF @ 16 V - - 8-SO - 3.1W (Ta) -55°C ~ 150°C (TJ)
MSJP11N80A-BP

MSJP11N80A-BP

N-CHANNEL MOSFET, TO-220AB(H)

Micro Commercial Co

4,992 -
MSJP11N80A-BP

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 470mOhm @ 7.1A, 10V Through Hole 4.5V @ 250µA 24 nC @ 10 V 800 V ±20V 918 pF @ 400 V - - TO-220AB (H) - 250W (Tj) -55°C ~ 150°C (TJ)
IPD12N03LB G

IPD12N03LB G

MOSFET N-CH 30V 30A TO252-3

Infineon Technologies

2,495 -
IPD12N03LB G

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 11.6mOhm @ 30A, 10V Surface Mount 2V @ 20µA 11 nC @ 5 V 30 V ±20V 1300 pF @ 15 V - - PG-TO252-3-11 - 52W (Tc) -55°C ~ 175°C (TJ)
SIHB11N80E-GE3

SIHB11N80E-GE3

MOSFET N-CH 800V 12A D2PAK

Vishay Siliconix

4,800 -
SIHB11N80E-GE3

数据表

E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 440mOhm @ 5.5A, 10V Surface Mount 4V @ 250µA 88 nC @ 10 V 800 V ±30V 1670 pF @ 100 V - - TO-263 (D2PAK) - 179W (Tc) -55°C ~ 150°C (TJ)
SI3456BDV-T1-E3

SI3456BDV-T1-E3

MOSFET N-CH 30V 4.5A 6TSOP

Vishay Siliconix

2,522 -
SI3456BDV-T1-E3

数据表

TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Ta) 4.5V, 10V 35mOhm @ 6A, 10V Surface Mount 3V @ 250µA 13 nC @ 10 V 30 V ±20V - - - 6-TSOP - 1.1W (Ta) -55°C ~ 150°C (TJ)
MSJW20N65A-BP

MSJW20N65A-BP

MOSFET N-CH TO247

Micro Commercial Co

5,395 -
MSJW20N65A-BP

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 180mOhm @ 10A, 10V Through Hole 5V @ 250µA 54 nC @ 10 V 650 V ±30V 1740 pF @ 100 V - - TO-247-3 - 250W (Tj) -55°C ~ 150°C (TJ)
FDS4435BZ-F085

FDS4435BZ-F085

MOSFET P-CH 30V 8.8A 8SOIC

onsemi

3,128 -
FDS4435BZ-F085

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 8.8A (Ta) 4.5V, 10V 20mOhm @ 8.8A, 10V Surface Mount 3V @ 250µA 40 nC @ 10 V 30 V ±25V 1845 pF @ 15 V AEC-Q101 - 8-SOIC Automotive 2.5W (Ta) -55°C ~ 150°C (TJ)
AONA66916

AONA66916

LINEAR IC

Alpha & Omega Semiconductor Inc.

4,700 -
AONA66916

数据表

AlphaSGT™ 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Ta), 197A (Tc) 6V, 10V 3.4mOhm @ 20A, 10V Surface Mount 3.6V @ 250µA 95 nC @ 10 V 100 V ±20V 5300 pF @ 50 V - - 8-DFN (5x6) - 7.5W (Ta), 300W (Tc) -55°C ~ 175°C (TJ)
AO4413

AO4413

MOSFET P-CH 30V 15A 8SOIC

Alpha & Omega Semiconductor Inc.

6,073 -
AO4413

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 15A (Ta) 10V, 20V 7mOhm @ 15A, 20V Surface Mount 3.5V @ 250µA 61 nC @ 10 V 30 V ±25V 3500 pF @ 15 V - - 8-SOIC - 3.1W (Ta) -55°C ~ 150°C (TJ)
TN0104N3-G-P003

TN0104N3-G-P003

MOSFET N-CH 40V 450MA TO92-3

Microchip Technology

2,981 -
TN0104N3-G-P003

数据表

- TO-226-3, TO-92-3 (TO-226AA) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 450mA (Ta) 3V, 10V 1.8Ohm @ 1A, 10V Through Hole 1.6V @ 500µA - 40 V ±20V 70 pF @ 20 V - - TO-92-3 - 1W (Tc) -55°C ~ 150°C (TJ)
VN2410L-G-P013

VN2410L-G-P013

MOSFET N-CH 240V 190MA TO92-3

Microchip Technology

2,687 -
VN2410L-G-P013

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Active N-Channel MOSFET (Metal Oxide) 190mA (Tj) 2.5V, 10V 10Ohm @ 500mA, 10V Through Hole 2V @ 1mA - 240 V ±20V 125 pF @ 25 V - - TO-92-3 - 1W (Tc) -55°C ~ 150°C (TJ)
VN2410L-G-P014

VN2410L-G-P014

MOSFET N-CH 240V 190MA TO92-3

Microchip Technology

2,492 -
VN2410L-G-P014

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Active N-Channel MOSFET (Metal Oxide) 190mA (Tj) 2.5V, 10V 10Ohm @ 500mA, 10V Through Hole 2V @ 1mA - 240 V ±20V 125 pF @ 25 V - - TO-92-3 - 1W (Tc) -55°C ~ 150°C (TJ)
STT7P2UH7

STT7P2UH7

MOSFET P-CH 20V 7A SOT23-6

STMicroelectronics

2,400 -
STT7P2UH7

数据表

STripFET™ SOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 7A (Tc) 1.5V, 4.5V 22.5mOhm @ 3.5A, 4.5V Surface Mount 1V @ 250µA 22 nC @ 4.5 V 20 V ±8V 2390 pF @ 16 V - - SOT-23-6 - 1.6W (Tc) 150°C (TJ)
TN0104N3-G-P014

TN0104N3-G-P014

MOSFET N-CH 40V 450MA TO92-3

Microchip Technology

2,526 -
TN0104N3-G-P014

数据表

- TO-226-3, TO-92-3 (TO-226AA) Tape & Box (TB) Active N-Channel MOSFET (Metal Oxide) 450mA (Ta) 3V, 10V 1.8Ohm @ 1A, 10V Through Hole 1.6V @ 500µA - 40 V ±20V 70 pF @ 20 V - - TO-92-3 - 1W (Tc) -55°C ~ 150°C (TJ)
IRFR5305TRR

IRFR5305TRR

MOSFET P-CH 55V 31A DPAK

Infineon Technologies

3,428 -
IRFR5305TRR

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 31A (Tc) 10V 65mOhm @ 16A, 10V Surface Mount 4V @ 250µA 63 nC @ 10 V 55 V ±20V 1200 pF @ 25 V - - TO-252AA (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
SPP80N06S2L-09

SPP80N06S2L-09

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies

7,565 -
SPP80N06S2L-09

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 8.5mOhm @ 52A, 10V Through Hole 2V @ 125µA 105 nC @ 10 V 55 V ±20V 3480 pF @ 25 V - - PG-TO220-3-1 - 190W (Tc) -55°C ~ 175°C (TJ)
HUFA76639S3S

HUFA76639S3S

MOSFET N-CH 100V 51A D2PAK

onsemi

9,540 -
HUFA76639S3S

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 51A (Tc) 4.5V, 10V 26mOhm @ 51A, 10V Surface Mount 3V @ 250µA 86 nC @ 10 V 100 V ±16V 2400 pF @ 25 V - - TO-263 (D2PAK) - 180W (Tc) -55°C ~ 175°C (TJ)
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