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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
AON7788

AON7788

MOSFET N-CH 30V 20A/40A 8DFN

Alpha & Omega Semiconductor Inc.

5,469 -
AON7788

数据表

SRFET™ 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20A (Ta), 40A (Tc) 4.5V, 10V 4.5mOhm @ 20A, 10V Surface Mount 2V @ 250µA 29 nC @ 10 V 30 V ±12V 4100 pF @ 15 V - Schottky Diode (Body) 8-DFN-EP (3x3) - 3.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ)
RCJ200N20TL

RCJ200N20TL

MOSFET N-CH 200V 20A LPTS

Rohm Semiconductor

976 -
RCJ200N20TL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 130mOhm @ 10A, 10V Surface Mount 5V @ 1mA 40 nC @ 10 V 200 V ±30V 1900 pF @ 25 V - - LPTS - 1.56W (Ta), 106W (Tc) 150°C (TJ)
NTMFS010N10GTWG

NTMFS010N10GTWG

100V MVSOA IN PQFN56 PACKAGE

onsemi

2,900 -
NTMFS010N10GTWG

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 10.8mOhm @ 31A, 10V Surface Mount 4V @ 164µA 58.5 nC @ 10 V 100 V ±20V 3950 pF @ 50 V - - 8-PQFN (5x6) - 3W (Tc) -55°C ~ 175°C (TJ)
BUK7E2R3-40E,127

BUK7E2R3-40E,127

MOSFET N-CH 40V 120A I2PAK

Nexperia USA Inc.

5,203 -
BUK7E2R3-40E,127

数据表

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 2.3mOhm @ 25A, 10V Through Hole 4V @ 1mA 109.2 nC @ 10 V 40 V ±20V 8500 pF @ 25 V AEC-Q101 - I2PAK Automotive 293W (Tc) -55°C ~ 175°C (TJ)
NVMFS4C302NWFT1G

NVMFS4C302NWFT1G

MOSFET N-CH 30V 43A/241A 5DFN

onsemi

1,500 -
NVMFS4C302NWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 43A (Ta), 241A (Tc) 4.5V, 10V 1.15mOhm @ 30A, 10V Surface Mount, Wettable Flank 2.2V @ 250µA 82 nC @ 10 V 30 V ±20V 5780 pF @ 15 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.75W (Ta), 115W (Tc) -55°C ~ 175°C (TJ)
FDD4N60NZ

FDD4N60NZ

MOSFET N-CH 600V 3.4A DPAK

onsemi

7,607 -
FDD4N60NZ

数据表

UniFET-II™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.4A (Tc) 10V 2.5Ohm @ 1.7A, 10V Surface Mount 5V @ 250µA 10.8 nC @ 10 V 600 V ±25V 510 pF @ 25 V - - TO-252AA - 114W (Tc) -55°C ~ 150°C (TJ)
RXR035N03TCL

RXR035N03TCL

MOSFET N-CH 30V 3.5A TSMT3

Rohm Semiconductor

4,428 -
RXR035N03TCL

数据表

- SC-96 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 3.5A (Ta) 4V, 10V 50mOhm @ 3.5A, 10V Surface Mount 2.5V @ 1mA 3.3 nC @ 5 V 30 V ±20V 180 pF @ 10 V - - TSMT3 - 1W (Ta) 150°C (TJ)
AON7520

AON7520

MOSFET N-CH 30V 48A/50A 8DFN

Alpha & Omega Semiconductor Inc.

5,320 -
AON7520

数据表

AlphaMOS 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 48A (Ta), 50A (Tc) 2.5V, 10V 1.8mOhm @ 20A, 10V Surface Mount 1.2V @ 250µA 105 nC @ 10 V 30 V ±12V 4175 pF @ 15 V - - 8-DFN-EP (3.3x3.3) - 6.2W (Ta), 83.3W (Tc) -55°C ~ 150°C (TJ)
IPD70R950CEAUMA1

IPD70R950CEAUMA1

MOSFET N-CH 700V 7.4A TO252-3

Infineon Technologies

3,316 -
IPD70R950CEAUMA1

数据表

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.4A (Tc) 10V 950mOhm @ 1.5A, 10V Surface Mount 3.5V @ 150µA 15.3 nC @ 10 V 700 V ±20V 328 pF @ 100 V - - PG-TO252-3 - 68W (Tc) -40°C ~ 150°C (TJ)
IPD25DP06LMATMA1

IPD25DP06LMATMA1

MOSFET P-CH 60V 6.5A TO252-3

Infineon Technologies

6,621 -
IPD25DP06LMATMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6.5A (Tc) 4.5V, 10V 250mOhm @ 6.5A, 10V Surface Mount 2V @ 270µA 13.8 nC @ 10 V 60 V ±20V 420 pF @ 30 V - - PG-TO252-3-313 - 28W (Tc) -55°C ~ 175°C (TJ)
PJQ5463A_R2_00001

PJQ5463A_R2_00001

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

5,156 -
PJQ5463A_R2_00001

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4A (Ta), 15A (Tc) 10V 68mOhm @ 7.5A, 10V Surface Mount 2.5V @ 250µA 17 nC @ 10 V 60 V ±20V 879 pF @ 30 V - - DFN5060-8 - 2W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
NTTFS6H880NTAG

NTTFS6H880NTAG

T8 80V U8FL

onsemi

3,919 -
NTTFS6H880NTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.3A (Ta), 21A (Tc) 6V, 10V 32mOhm @ 5A, 10V Surface Mount 4V @ 20µA 6.9 nC @ 10 V 80 V ±20V 370 pF @ 40 V - - 8-WDFN (3.3x3.3) - 3.1W (Ta), 31W (Tc) -55°C ~ 175°C (TJ)
TK13A50D(STA4,Q,M)

TK13A50D(STA4,Q,M)

MOSFET N-CH 500V 13A TO220SIS

Toshiba Semiconductor and Storage

110 -
TK13A50D(STA4,Q,M)

数据表

π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 13A (Ta) 10V 400mOhm @ 6.5A, 10V Through Hole 4V @ 1mA 38 nC @ 10 V 500 V ±30V 1800 pF @ 25 V - - TO-220SIS - 45W (Tc) 150°C (TJ)
RS6G120BHTB1

RS6G120BHTB1

NCH 40V 210A, HSOP8, POWER MOSFE

Rohm Semiconductor

2,500 -
RS6G120BHTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 6V, 10V 1.38mOhm @ 90A, 10V Surface Mount 4V @ 1mA 67 nC @ 10 V 40 V ±20V 4790 pF @ 20 V - - 8-HSOP - 3W (Ta), 104W (Tc) 150°C (TJ)
SI7846DP-T1-GE3

SI7846DP-T1-GE3

MOSFET N-CH 150V 4A PPAK SO-8

Vishay Siliconix

1,914 -
SI7846DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Ta) 10V 50mOhm @ 5A, 10V Surface Mount 4.5V @ 250µA 36 nC @ 10 V 150 V ±20V - - - PowerPAK® SO-8 - 1.9W (Ta) -55°C ~ 150°C (TJ)
FDPF035N06B-F154

FDPF035N06B-F154

MOSFET N-CH 60V 88A TO220F

onsemi

985 -
FDPF035N06B-F154

数据表

PowerTrench® TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 88A (Tc) - 3.5mOhm @ 88A, 10V Through Hole 4V @ 250µA 99 nC @ 10 V 60 V ±20V 8030 pF @ 30 V - - TO-220F - 46.3W (Tc) -55°C ~ 175°C (TJ)
SIHA20N50E-E3

SIHA20N50E-E3

MOSFET N-CH 500V 19A TO220

Vishay Siliconix

496 -
SIHA20N50E-E3

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 184mOhm @ 10A, 10V Through Hole 4V @ 250µA 92 nC @ 10 V 500 V ±30V 1640 pF @ 100 V - - TO-220 Full Pack - 34W (Tc) -55°C ~ 150°C (TJ)
NTMJS1D2N04CLTWG

NTMJS1D2N04CLTWG

MOSFET N-CH 40V 41A/237A 8LFPAK

onsemi

3,000 -
NTMJS1D2N04CLTWG

数据表

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 41A (Ta), 237A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V Surface Mount 2V @ 170µA 93 nC @ 10 V 40 V ±20V 5600 pF @ 25 V - - 8-LFPAK - 3.8W (Ta), 128W (Tc) -55°C ~ 175°C (TJ)
IPI120N04S401AKSA1

IPI120N04S401AKSA1

MOSFET N-CH 40V 120A TO262-3

Infineon Technologies

225 -
IPI120N04S401AKSA1

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 1.9mOhm @ 100A, 10V Through Hole 4V @ 140µA 176 nC @ 10 V 40 V ±20V 14000 pF @ 25 V - - PG-TO262-3 - 188W (Tc) -55°C ~ 175°C (TJ)
SIRS4302DP-T1-GE3

SIRS4302DP-T1-GE3

N-CHANNEL 30 V (D-S) MOSFET POWE

Vishay Siliconix

11,921 -
SIRS4302DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 87A (Ta), 478A (Tc) 4.5V, 10V 0.57mOhm @ 20A, 10V Surface Mount 2.2V @ 250µA 230 nC @ 10 V 30 V +20V, -16V 10150 pF @ 15 V - - PowerPAK® SO-8 - 6.9W (Ta), 208W (Tc) -55°C ~ 150°C (TJ)
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