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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
BSP230,135

BSP230,135

MOSFET P-CH 300V 210MA SOT223

Nexperia USA Inc.

4,471 -
BSP230,135

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 210mA (Ta) 10V 17Ohm @ 170mA, 10V Surface Mount 2.55V @ 1mA - 300 V ±20V 90 pF @ 25 V - - SOT-223 - 1.5W (Ta) 150°C (TJ)
FDD6N25TF

FDD6N25TF

MOSFET N-CH 250V 4.4A DPAK

onsemi

8,272 -
FDD6N25TF

数据表

UniFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.4A (Tc) 10V 1.1Ohm @ 2.2A, 10V Surface Mount 5V @ 250µA 6 nC @ 10 V 250 V ±30V 250 pF @ 25 V - - TO-252AA - 50W (Tc) -55°C ~ 150°C (TJ)
RD3G08BBJHRBTL

RD3G08BBJHRBTL

PCH -40V -80A, TO-252 (DPAK), PO

Rohm Semiconductor

2,396 -
RD3G08BBJHRBTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 80A (Ta) 4.5V, 10V 4.9mOhm @ 80A, 10V Surface Mount 2.5V @ 1mA 145 nC @ 10 V 40 V +5V, -20V 7350 pF @ 20 V AEC-Q101 - TO-252 Automotive 142W (Tc) 175°C (TJ)
RSF010P03TL

RSF010P03TL

MOSFET P-CH 30V 1A TUMT3

Rohm Semiconductor

9,946 -
RSF010P03TL

数据表

- 3-SMD, Flat Leads Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 1A (Ta) 4V, 10V 350mOhm @ 1A, 10V Surface Mount - 1.9 nC @ 5 V 30 V ±20V 120 pF @ 10 V - - TUMT3 - 800mW (Ta) 150°C (TJ)
IAUA180N08S5N026AUMA1

IAUA180N08S5N026AUMA1

MOSFET_(75V 120V( PG-HSOF-5

Infineon Technologies

1,468 -
IAUA180N08S5N026AUMA1

数据表

OptiMOS™ 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 180A (Tj) 6V, 10V 2.6mOhm @ 90A, 10V Surface Mount 3.8V @ 100µA 87 nC @ 10 V 80 V ±20V 5980 pF @ 40 V - - PG-HSOF-5-4 - 179W (Tc) -55°C ~ 175°C (TJ)
NTMFS5C612NT1G

NTMFS5C612NT1G

NFET SO8FL 60V 235A 1.5MO

onsemi

430 -
NTMFS5C612NT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Ta), 230A (Tc) 10V 1.6mOhm @ 50A, 10V Surface Mount 4V @ 250µA 60.2 nC @ 10 V 60 V ±20V 4830 pF @ 25 V - - 5-DFN (5x6) (8-SOFL) - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ)
AO4427

AO4427

MOSFET P-CH 30V 12.5A 8SOIC

Alpha & Omega Semiconductor Inc.

6,916 -
AO4427

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12.5A (Ta) 4.5V, 10V 12mOhm @ 12.5A, 20V Surface Mount 3V @ 250µA 52 nC @ 10 V 30 V ±25V 2900 pF @ 15 V - - 8-SOIC - 3W (Ta) -55°C ~ 150°C (TJ)
IQE046N08LM5SCATMA1

IQE046N08LM5SCATMA1

OPTIMOS 5 POWER-TRANSISTOR 60V

Infineon Technologies

5,670 -
IQE046N08LM5SCATMA1

数据表

OptiMOS™ 5 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15.6A (Ta), 99A (Tc) 4.5V, 10V 4.6mOhm @ 20A, 10V Surface Mount 2.3V @ 47µA 38 nC @ 10 V 80 V ±20V 3250 pF @ 40 V - - PG-WHSON-8-1 - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ)
AOD486A

AOD486A

MOSFET N-CH 40V 50A TO252

Alpha & Omega Semiconductor Inc.

2,740 -
AOD486A

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 9.8mOhm @ 20A, 10V Surface Mount 3V @ 250µA 22 nC @ 10 V 40 V ±20V 1920 pF @ 20 V - - TO-252 (DPAK) - 2W (Ta), 50W (Tc) -55°C ~ 175°C (TJ)
CSD25301W1015

CSD25301W1015

MOSFET P-CH 20V 2.2A 6DSBGA

Texas Instruments

6,954 -
CSD25301W1015

数据表

NexFET™ 6-UFBGA, DSBGA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.2A (Tc) 1.5V, 4.5V 75mOhm @ 1A, 4.5V Surface Mount 1V @ 250µA 2.5 nC @ 4.5 V 20 V ±8V 270 pF @ 10 V - - 6-DSBGA (1x1.5) - 1.5W (Ta) -55°C ~ 150°C (TJ)
TPW5200FNH,L1Q

TPW5200FNH,L1Q

PB-F POWER MOSFET TRANSISTOR DSO

Toshiba Semiconductor and Storage

4,655 -
TPW5200FNH,L1Q

数据表

U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 26A (Tc) 10V 52mOhm @ 13A, 10V Surface Mount 4V @ 1mA 22 nC @ 10 V 250 V ±20V 2200 pF @ 100 V - - 8-DSOP Advance - 800mW (Ta), 142W (Tc) 150°C
PJD60N04V-AU_L2_002A1

PJD60N04V-AU_L2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
PJD60N04V-AU_L2_002A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25A (Ta), 154A (Tc) 7V, 10V 2.7mOhm @ 20A, 10V Surface Mount 3.5V @ 50µA 43 nC @ 10 V 40 V ±20V 3054 pF @ 25 V AEC-Q101 - TO-252AA Automotive 3W (Ta), 115W (Tc) -55°C ~ 175°C (TJ)
BUK9Y11-30B,115

BUK9Y11-30B,115

MOSFET N-CH 30V 59A LFPAK56

Nexperia USA Inc.

8,551 -
BUK9Y11-30B,115

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 59A (Tc) 4.5V, 10V 9mOhm @ 25A, 10V Surface Mount 2V @ 1mA 16.5 nC @ 5 V 30 V ±15V 1614 pF @ 25 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 75W (Tc) -55°C ~ 175°C (TJ)
TK50P04M1(T6RSS-Q)

TK50P04M1(T6RSS-Q)

MOSFET N-CH 40V 50A DP

Toshiba Semiconductor and Storage

3,893 -
TK50P04M1(T6RSS-Q)

数据表

U-MOSVI-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Ta) 4.5V, 10V 8.7mOhm @ 25A, 10V Surface Mount 2.3V @ 500µA 38 nC @ 10 V 40 V ±20V 2600 pF @ 10 V - - DPAK - 60W (Tc) 150°C (TJ)
NTMFS5C406NLT1G

NTMFS5C406NLT1G

MOSFET N-CH 40V 53A/362A 5DFN

onsemi

1,469 -
NTMFS5C406NLT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 53A (Ta), 362A (Tc) 4.5V, 10V 0.7mOhm @ 50A, 10V Surface Mount 2V @ 280µA 149 nC @ 10 V 40 V ±20V 9400 pF @ 20 V - - 5-DFN (5x6) (8-SOFL) - 3.9W (Ta), 179W (Tc) -55°C ~ 175°C (TJ)
NVB260N65S3

NVB260N65S3

SF3 650V EASY 260MOHM D2PAK AUTO

onsemi

740 -
NVB260N65S3

数据表

SuperFET® III TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 260mOhm @ 6A, 10V Surface Mount 4.5V @ 290µA 24 nC @ 10 V 650 V ±30V 1010 pF @ 400 V - - TO-263 (D2PAK) - 90W (Tc) -55°C ~ 150°C (TJ)
IRF7406GTRPBF

IRF7406GTRPBF

MOSFET P-CH 30V 5.8A 8SO

Infineon Technologies

7,812 -
IRF7406GTRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.8A (Ta) 4.5V, 10V 45mOhm @ 2.8A, 10V Surface Mount 1V @ 250µA 59 nC @ 10 V 30 V ±20V 1100 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
FDD3N50NZTM

FDD3N50NZTM

MOSFET N-CH 500V 2.5A DPAK

onsemi

9,381 -
FDD3N50NZTM

数据表

UniFET-II™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.5A (Tc) 10V 2.5Ohm @ 1.25A, 10V Surface Mount 5V @ 250µA 8 nC @ 10 V 500 V ±25V 280 pF @ 25 V - - TO-252AA - 40W (Tc) -55°C ~ 150°C (TJ)
IPA600N25NM3SXKSA1

IPA600N25NM3SXKSA1

MOSFET N-CH 250V 15A TO220

Infineon Technologies

276 -
IPA600N25NM3SXKSA1

数据表

OptiMOS™ 3 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 60mOhm @ 15A, 10V Through Hole 4V @ 89µA 29 nC @ 10 V 250 V ±20V 2300 pF @ 100 V - - PG-TO220 Full Pack - 38W (Tc) -55°C ~ 175°C (TJ)
IPP089N15NM6AKSA1

IPP089N15NM6AKSA1

TRENCH >=100V

Infineon Technologies

1,981 -
IPP089N15NM6AKSA1

数据表

OptiMOS™ 6 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 13.6A (Ta), 88A (Tc) 8V, 15V 8.4mOhm @ 32A, 15V Through Hole 4V @ 73µA 38 nC @ 10 V 150 V ±20V 2700 pF @ 75 V - - PG-TO220-3-1 - 3.8W (Ta), 158W (Tc) -55°C ~ 175°C (TJ)
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