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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
NVMJS1D4N06CLTWG

NVMJS1D4N06CLTWG

MOSFET N-CH 60V 39A/262A 8LFPAK

onsemi

2,725 -
NVMJS1D4N06CLTWG

数据表

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 39A (Ta), 262A (Tc) 4.5V, 10V 1.3mOhm @ 50A, 10V Surface Mount 2V @ 280µA 103 nC @ 10 V 60 V ±20V 7430 pF @ 30 V AEC-Q101 - 8-LFPAK Automotive 4W (Ta), 180W (Tc) -55°C ~ 175°C (TJ)
XP6NA1R4CXT

XP6NA1R4CXT

FET N-CH 60V 44.6A 100A PMPAK

YAGEO XSEMI

1,000 -
XP6NA1R4CXT

数据表

XP6NA1R4C 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 44.6A (Ta), 100A (Tc) 6V, 10V 1.45mOhm @ 20A, 10V Surface Mount 4V @ 250µA 195 nC @ 10 V 60 V ±20V 11520 pF @ 50 V - - PMPAK® 5 x 6 - 5W (Ta), 113.6W (Tc) -55°C ~ 150°C (TJ)
TK160F10N1L,LQ

TK160F10N1L,LQ

MOSFET N-CH 100V 160A TO220SM

Toshiba Semiconductor and Storage

914 -
TK160F10N1L,LQ

数据表

U-MOSVIII-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 160A (Ta) 6V, 10V 2.4mOhm @ 80A, 10V Surface Mount 3.5V @ 1mA 122 nC @ 10 V 100 V ±20V 10100 pF @ 10 V - - TO-220SM(W) - 375W (Tc) 175°C
TSM60NE285CP ROG

TSM60NE285CP ROG

MOSFET

Taiwan Semiconductor Corporation

5,000 -
TSM60NE285CP ROG

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V, 12V 274mOhm @ 5A, 12V Surface Mount 6V @ 1.4mA 22 nC @ 10 V 600 V ±30V 884 pF @ 300 V - - TO-252 (DPAK) - 139W (Tc) -55°C ~ 150°C (TJ)
IRFS3307ZTRRPBF

IRFS3307ZTRRPBF

MOSFET N-CH 75V 120A D2PAK

Infineon Technologies

1,198 -
IRFS3307ZTRRPBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 5.8mOhm @ 75A, 10V Surface Mount 4V @ 150µA 110 nC @ 10 V 75 V ±20V 4750 pF @ 50 V - - TO-263 (D2PAK) - 230W (Tc) -55°C ~ 175°C (TJ)
SIDR510EP-T1-RE3

SIDR510EP-T1-RE3

N-CHANNEL 100 V (D-S) 175C MOSFE

Vishay Siliconix

5,782 -
SIDR510EP-T1-RE3

数据表

TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 33A (Ta), 148A (Tc) 7.5V, 10V 3.6mOhm @ 20A, 10V Surface Mount 4V @ 250µA 81 nC @ 10 V 100 V ±20V 4980 pF @ 50 V - - PowerPAK® SO-8DC - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ)
NVMFWS1D9N08XT1G

NVMFWS1D9N08XT1G

T10 80V STD NCH MOSFET SO8FL PRE

onsemi

1,435 -
NVMFWS1D9N08XT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 201A (Tc) 10V 1.9mOhm @ 50A, 10V Surface Mount, Wettable Flank 3.6V @ 252µA 63 nC @ 10 V 80 V ±20V 4470 pF @ 40 V AEC-Q101 - 5-DFNW (4.9x5.9) (8-SOFL-WF) Automotive 164W (Tc) -55°C ~ 175°C (TJ)
RD3G07BBGTL1

RD3G07BBGTL1

NCH 40V 70A, TO-252, POWER MOSF

Rohm Semiconductor

474 -
RD3G07BBGTL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 4.5V, 10V 2.3mOhm @ 70A, 10V Surface Mount 2.5V @ 1mA 56 nC @ 10 V 40 V ±20V 3540 pF @ 20 V - - TO-252 - 89W (Tc) 150°C (TJ)
IPI076N12N3GAKSA1

IPI076N12N3GAKSA1

MOSFET N-CH 120V 100A TO262-3

Infineon Technologies

476 -
IPI076N12N3GAKSA1

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 7.6mOhm @ 100A, 10V Through Hole 4V @ 130µA 101 nC @ 10 V 120 V ±20V 6640 pF @ 60 V - - PG-TO262-3 - 188W (Tc) -55°C ~ 175°C (TJ)
FCPF165N65S3L1-F154

FCPF165N65S3L1-F154

SF3 650V 165MOHM E TO220F

onsemi

940 -
FCPF165N65S3L1-F154

数据表

- TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 19A (Tj) 10V 165mOhm @ 9.5A, 10V Through Hole 4.5V @ 410µA 35 nC @ 10 V 650 V ±30V 1415 pF @ 400 V - - TO-220F-3 - 35W (Tc) -55°C ~ 150°C (TJ)
NTMFS5H600NLT3G

NTMFS5H600NLT3G

MOSFET N-CH 60V 35A/250A 5DFN

onsemi

5,000 -
NTMFS5H600NLT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Ta), 250A (Tc) 4.5V, 10V 1.3mOhm @ 50A, 10V Surface Mount 2V @ 250µA 89 nC @ 10 V 60 V ±20V 6680 pF @ 30 V - - 5-DFN (5x6) (8-SOFL) - 3.3W (Ta), 160W (Tc) -55°C ~ 150°C (TJ)
TQM019NH04LCR RLG

TQM019NH04LCR RLG

40V, 100A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

4,995 -
TQM019NH04LCR RLG

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
TQM019NH04CR RLG

TQM019NH04CR RLG

40V, 100A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

4,980 -
TQM019NH04CR RLG

数据表

PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Ta), 100A (Tc) 7V, 10V 1.9mOhm @ 50A, 10V Surface Mount, Wettable Flank 3.6V @ 250µA 134 nC @ 10 V 40 V ±20V 9044 pF @ 25 V AEC-Q101 - 8-PDFNU (4.9x5.75) Automotive 150W (Tc) -55°C ~ 175°C (TJ)
PJD90P03E-AU_L2_006A1

PJD90P03E-AU_L2_006A1

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,984 -
PJD90P03E-AU_L2_006A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 17A (Ta), 88A (Tc) 4.5V, 10V 6.4mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 68 nC @ 10 V 30 V ±25V 3040 pF @ 25 V AEC-Q101 - TO-252AA Automotive 3W (Ta), 79W (Tc) -55°C ~ 175°C (TJ)
NTMFS5H600NLT1G-IRH1

NTMFS5H600NLT1G-IRH1

T8 60V LOW COSS

onsemi

1,498 -
NTMFS5H600NLT1G-IRH1

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Ta), 250A (Tc) 4.5V, 10V 1.3mOhm @ 50A, 10V Surface Mount 2V @ 250µA 89 nC @ 10 V 60 V ±20V 6680 pF @ 30 V - - 5-DFN (5x6) (8-SOFL) - 3.3W (Ta), 160W (Tc) -55°C ~ 150°C (TJ)
FCPF380N60E-F154

FCPF380N60E-F154

MOSFET N-CH 600V 10.2A TO220F-3

onsemi

990 -
FCPF380N60E-F154

数据表

SuperFET® II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 10.2A (Tj) - 380mOhm @ 5A, 10V Through Hole 3.5V @ 250µA 45 nC @ 10 V 600 V ±20V 1770 pF @ 25 V - - TO-220F-3 - 31W (Tc) -55°C ~ 150°C (TJ)
HUFA75321D3ST

HUFA75321D3ST

MOSFET N-CH 55V 20A TO252AA

onsemi

8,176 -
HUFA75321D3ST

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 36mOhm @ 20A, 10V Surface Mount 4V @ 250µA 44 nC @ 20 V 55 V ±20V 680 pF @ 25 V AEC-Q101 - TO-252AA Automotive 93W (Tc) -55°C ~ 175°C (TJ)
BUK9660-100A,118

BUK9660-100A,118

MOSFET N-CH 100V 26A D2PAK

Nexperia USA Inc.

9,174 -
BUK9660-100A,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 26A (Tc) 4.5V, 10V 58mOhm @ 15A, 10V Surface Mount 2V @ 1mA - 100 V ±10V 1924 pF @ 25 V AEC-Q101 - D2PAK Automotive 106W (Tc) -55°C ~ 175°C (TJ)
SI1070X-T1-E3

SI1070X-T1-E3

MOSFET N-CH 30V 1.2A SC89-6

Vishay Siliconix

3,341 -
SI1070X-T1-E3

数据表

TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.2A (Ta) 2.5V, 4.5V 99mOhm @ 1.2A, 4.5V Surface Mount 1.55V @ 250µA 8.3 nC @ 5 V 30 V ±12V 385 pF @ 15 V - - SC-89 (SOT-563F) - 236mW (Ta) -55°C ~ 150°C (TJ)
IRFIBF20GPBF

IRFIBF20GPBF

MOSFET N-CH 900V 1.2A TO220-3

Vishay Siliconix

988 -
IRFIBF20GPBF

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 1.2A (Tc) 10V 8Ohm @ 720mA, 10V Through Hole 4V @ 250µA 38 nC @ 10 V 900 V ±20V 490 pF @ 25 V - - TO-220-3 - 30W (Tc) -55°C ~ 150°C (TJ)
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