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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFHS9301TR2PBF MOSFET P-CH 30V 6A PQFN Infineon Technologies	5,292	-	询价单	数据表	-	6-PowerVDFN	Cut Tape (CT)	Obsolete	P-Channel	MOSFET (Metal Oxide)	6A (Ta), 13A (Tc)	-	37mOhm @ 7.8A, 10V	Surface Mount	2.4V @ 25µA	13 nC @ 10 V	30 V	-	580 pF @ 25 V	-	-	6-PQFN (2x2)	-	-	-
BUK7Y98-80EX MOSFET N-CH 80V 12.3A LFPAK56 Nexperia USA Inc.	4,114	-	询价单	数据表	TrenchMOS™	SC-100, SOT-669	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12.3A (Tc)	10V	98mOhm @ 5A, 10V	Surface Mount	4V @ 1mA	8.5 nC @ 10 V	80 V	±20V	498 pF @ 25 V	AEC-Q101	-	LFPAK56, Power-SO8	Automotive	37W (Tc)	-55°C ~ 175°C (TJ)
GKI06259 MOSFET N-CH 60V 6A 8DFN Sanken Electric USA Inc.	2,693	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	6A (Ta)	4.5V, 10V	21mOhm @ 12.5A, 10V	Surface Mount	2.5V @ 250µA	16 nC @ 10 V	60 V	±20V	1050 pF @ 25 V	-	-	8-DFN (5x6)	-	3.1W (Ta), 40W (Tc)	150°C (TJ)
IPD60R460CEATMA1 MOSFET N-CH 600V 9.1A TO252-3 Infineon Technologies	7,127	-	询价单	数据表	CoolMOS™ CE	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.1A (Tc)	10V	460mOhm @ 3.4A, 10V	Surface Mount	3.5V @ 280µA	28 nC @ 10 V	600 V	±20V	620 pF @ 100 V	-	-	PG-TO252-3	-	74W (Tc)	-40°C ~ 150°C (TJ)
SQ2309ES-T1_GE3 MOSFET P-CH 60V 1.7A TO236 Vishay Siliconix	9,553	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	1.7A (Tc)	4.5V, 10V	336mOhm @ 3.8A, 10V	Surface Mount	2.5V @ 250µA	8.5 nC @ 10 V	60 V	±20V	265 pF @ 25 V	AEC-Q101	-	SOT-23-3 (TO-236)	Automotive	2W (Tc)	-55°C ~ 175°C (TJ)
HUFA76633S3S MOSFET N-CH 100V 39A D2PAK onsemi	8,386	-	询价单	数据表	UltraFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	39A (Tc)	4.5V, 10V	35mOhm @ 39A, 10V	Surface Mount	3V @ 250µA	67 nC @ 10 V	100 V	±16V	1820 pF @ 25 V	-	-	TO-263 (D2PAK)	-	145W (Tc)	-55°C ~ 175°C (TJ)
IRLZ24NSTRR MOSFET N-CH 55V 18A D2PAK Infineon Technologies	3,273	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	4V, 10V	60mOhm @ 11A, 10V	Surface Mount	2V @ 250µA	15 nC @ 5 V	55 V	±16V	480 pF @ 25 V	-	-	D2PAK	-	3.8W (Ta), 45W (Tc)	-55°C ~ 175°C (TJ)
TSM051N04LCP 40V, 96A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	5,208	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	16A (Ta), 96A (Tc)	4.5V, 10V	5.1mOhm @ 16A, 10V	Surface Mount	2.5V @ 250µA	44.5 nC @ 10 V	40 V	±20V	2456 pF @ 20 V	-	-	TO-252 (DPAK)	-	2.6W (Ta), 89W (Tc)	-55°C ~ 150°C (TJ)
IRF520NS MOSFET N-CH 100V 9.7A D2PAK Infineon Technologies	6,219	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.7A (Tc)	10V	200mOhm @ 5.7A, 10V	Surface Mount	4V @ 250µA	25 nC @ 10 V	100 V	±20V	330 pF @ 25 V	-	-	D2PAK	-	3.8W (Ta), 48W (Tc)	-55°C ~ 175°C (TJ)
SIHP4N80E-GE3 MOSFET N-CH 800V 4.3A TO220AB Vishay Siliconix	5,473	-	询价单	数据表	E	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4.3A (Tc)	10V	1.27Ohm @ 2A, 10V	Through Hole	4V @ 250µA	32 nC @ 10 V	800 V	±30V	622 pF @ 100 V	-	-	TO-220AB	-	69W (Tc)	-55°C ~ 150°C (TJ)
PSMN7R6-60PS,127 MOSFET N-CH 60V 92A TO220AB Nexperia USA Inc.	6,707	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	92A (Tc)	10V	7.8mOhm @ 25A, 10V	Through Hole	4V @ 1mA	38.7 nC @ 10 V	60 V	±20V	2651 pF @ 30 V	-	-	TO-220AB	-	149W (Tc)	-55°C ~ 175°C (TJ)
IRLU014N MOSFET N-CH 55V 10A I-PAK Infineon Technologies	7,119	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	10A (Tc)	4.5V, 10V	140mOhm @ 6A, 10V	Through Hole	1V @ 250µA	7.9 nC @ 5 V	55 V	±16V	265 pF @ 25 V	-	-	IPAK	-	28W (Tc)	-55°C ~ 175°C (TJ)
PSMN0R9-30ULD/2X PSMN0R9-30ULD/SOT1023/4 LEADS Nexperia USA Inc.	5,473	-	询价单	数据表	-	SOT-1023, 4-LFPAK	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	300A (Tc)	4.5V, 10V	0.87mOhm @ 25A, 10V	Surface Mount	2.2V @ 1mA	109 nC @ 10 V	30 V	±20V	7668 pF @ 15 V	-	-	LFPAK56, Power-SO8	-	227W (Tc)	-55°C ~ 150°C (TJ)
IXFP30N25X3M MOSFET N-CH 250V 30A TO220 IXYS	262	-	询价单	数据表	HiPerFET™, Ultra X3	TO-220-3 Full Pack, Isolated Tab	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	10V	60mOhm @ 15A, 10V	Through Hole	4.5V @ 500µA	21 nC @ 10 V	250 V	±20V	1450 pF @ 25 V	-	-	TO-220 Isolated Tab	-	36W (Tc)	-55°C ~ 150°C (TJ)
TSM60NC165CI C0G 600V, 24A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	3,989	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V	165mOhm @ 11.3A, 10V	Through Hole	5V @ 1mA	44 nC @ 10 V	600 V	±30V	1857 pF @ 300 V	-	-	ITO-220	-	89W (Tc)	-55°C ~ 150°C (TJ)
SUM40012EL-GE3 MOSFET N-CH 40V 150A TO263 Vishay Siliconix	2,434	-	询价单	数据表	TrenchFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150A (Tc)	4.5V, 10V	1.67mOhm @ 30A, 10V	Surface Mount	2.5V @ 250µA	195 nC @ 10 V	40 V	±20V	10930 pF @ 20 V	-	-	TO-263 (D2PAK)	-	150W (Tc)	-55°C ~ 175°C (TJ)
R6010YNX3C16 600V 10A TO-220AB, HIGH-SPEED SW Rohm Semiconductor	1,000	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	10A (Tc)	10V, 12V	390mOhm @ 4.2A, 12V	Through Hole	6V @ 1.2mA	15 nC @ 10 V	600 V	±30V	600 pF @ 100 V	-	-	TO-220AB	-	92W (Tc)	150°C (TJ)
IPB60R210CFD7ATMA1 MOSFET N-CH 600V 12A TO263-3 Infineon Technologies	990	-	询价单	数据表	CoolMOS™ CFD7	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	10V	210mOhm @ 4.9A, 10V	Surface Mount	4.5V @ 250µA	23 nC @ 10 V	600 V	±20V	1015 pF @ 400 V	-	-	PG-TO263-3-2	-	64W (Tc)	-55°C ~ 150°C (TJ)
TK9R7A15Q5,S4X 150V UMOS10-HSD TO-220SIS 9.7MOH Toshiba Semiconductor and Storage	388	-	询价单	数据表	U-MOSX-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	49A (Tc)	8V, 10V	9.7mOhm @ 24.5A, 10V	Through Hole	4.5V @ 1.1mA	50 nC @ 10 V	150 V	±20V	3690 pF @ 75 V	-	-	TO-220SIS	-	45W (Tc)	175°C
IQE022N06LM5SCATMA1 OPTIMOS 5 POWER-TRANSISTOR 60V Infineon Technologies	5,868	-	询价单	数据表	OptiMOS™ 5	8-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	24A (Ta), 151A (Tc)	4.5V, 10V	2.2mOhm @ 20A, 10V	Surface Mount	2.3V @ 48µA	53 nC @ 10 V	60 V	±20V	4420 pF @ 30 V	-	-	PG-WHSON-8-1	-	2.5W (Ta), 100W (Tc)	-55°C ~ 175°C (TJ)

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