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场效应晶体管(FETs)、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IQE022N06LM5CGSCATMA1OPTIMOS 5 POWER-TRANSISTOR 60V |
4,651 | - |
|
数据表 |
OptiMOS™ 5 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 24A (Ta), 151A (Tc) | 4.5V, 10V | 2.2mOhm @ 20A, 10V | Surface Mount | 2.3V @ 48µA | 53 nC @ 10 V | 60 V | ±20V | 4420 pF @ 30 V | - | - | PG-WHTFN-9 | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) |
|
PJQ5590-AU_R2_002A1150V N-CHANNEL ENHANCEMENT MODE |
3,000 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPP034N08N5AKSA1MOSFET N-CH 80V 120A TO220-3 |
914 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 6V, 10V | 3.4mOhm @ 100A, 10V | Through Hole | 3.8V @ 108µA | 87 nC @ 10 V | 80 V | ±20V | 6240 pF @ 40 V | - | - | PG-TO220-3 | - | 167W (Tc) | -55°C ~ 175°C (TJ) |
|
MCAC160N06Y-TPMOSFET N-CH 60 160A DFN5060 |
5,000 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 160A (Tc) | 6V, 10V | 2.5mOhm @ 20A, 10V | Surface Mount | 4V @ 250µA | 64 nC @ 10 V | 60 V | ±20V | 3586 pF @ 20 V | - | - | DFN5060 | - | 150W (Tj) | -55°C ~ 175°C (TJ) |
|
TK20G60W,RVQMOSFET N CH 600V 20A D2PAK |
1,960 | - |
|
数据表 |
DTMOSIV | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | Surface Mount | 3.7V @ 1mA | 48 nC @ 10 V | 600 V | ±30V | 1680 pF @ 300 V | - | - | D2PAK | - | 165W (Tc) | 150°C (TJ) |
|
NVMFS6H824NLWFT1GMOSFET N-CH 80V 20A/110A 5DFN |
1,490 | - |
|
数据表 |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20A (Ta), 110A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | Surface Mount, Wettable Flank | 2V @ 140µA | 52 nC @ 10 V | 80 V | ±20V | 2900 pF @ 40 V | AEC-Q101 | - | 5-DFN (5x6) (8-SOFL) | Automotive | 3.8W (Ta), 116W (Tc) | -55°C ~ 175°C (TJ) |
|
FDP047N08-F102MOSFET N-CH 75V 164A TO220-3 |
3,179 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 164A (Tc) | 10V | 4.7mOhm @ 80A, 10V | Through Hole | 4.5V @ 250µA | 152 nC @ 10 V | 75 V | ±20V | 9415 pF @ 25 V | - | - | TO-220-3 | - | 268W (Tc) | -55°C ~ 175°C (TJ) |
|
NTMJST2D6N08HTXGTRENCH 8 80V LFPAK 5X7 |
2,900 | - |
|
数据表 |
- | 10-PowerLSOP (0.209", 5.30mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 28A (Ta), 131.5A (Tc) | 10V | 2.8mOhm @ 50A, 10V | Surface Mount | 4V @ 250µA | 68 nC @ 10 V | 80 V | ±20V | 4405 pF @ 40 V | - | - | 10-TCPAK | - | 5.3W (Ta), 116W (Tc) | -55°C ~ 175°C (TJ) |
|
IPP030N10N5XKSA1TRENCH >=100V |
500 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | Through Hole | 3.8V @ 184µA | 139 nC @ 10 V | 100 V | ±20V | 10300 pF @ 50 V | - | - | PG-TO220-3-1 | - | 250W (Tc) | -55°C ~ 175°C (TJ) |
|
SIDR220DP-T1-GE3MOSFET N-CH 25V 87.7A/100A PPAK |
5,973 | - |
|
数据表 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 87.7A (Ta), 100A (Tc) | 4.5V, 10V | 5.8mOhm @ 20A, 10V | Surface Mount | 2.1V @ 250µA | 200 nC @ 10 V | 25 V | +16V, -12V | 1085 pF @ 10 V | - | - | PowerPAK® SO-8DC | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) |
|
XPQ1R004PB,LXHQ40V U-MOS IX-H L-TOGL 1.0MOHM |
4,500 | - |
|
数据表 |
U-MOSIX-H | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200A (Ta) | 6V, 10V | 1mOhm @ 100A, 10V | Surface Mount | 3V @ 500µA | 84 nC @ 10 V | 40 V | ±20V | 6890 pF @ 10 V | AEC-Q101 | - | L-TOGL™ | Automotive | 230W (Tc) | 175°C |
|
NVMFWS3D0P04M8LT1GMV8 P INITIAL PROGRAM |
1,435 | - |
|
数据表 |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 28A (Ta), 183A (Tc) | 4.5V, 10V | 2.7mOhm @ 30A,10V | Surface Mount | 2.4V @ 2mA | 124 nC @ 10 V | 40 V | ±20V | 5827 pF @ 20 V | AEC-Q101 | - | 5-DFN (5x6) (8-SOFL) | Automotive | 3.9W (Ta), 171W (Tc) | -55°C ~ 175°C (TJ) |
|
|
FDI150N10MOSFET N-CH 100V 57A I2PAK |
3,026 | - |
|
数据表 |
PowerTrench® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 57A (Tc) | 10V | 16mOhm @ 49A, 10V | Through Hole | 4.5V @ 250µA | 69 nC @ 10 V | 100 V | ±20V | 4760 pF @ 25 V | - | - | TO-262 (I2PAK) | - | 110W (Tc) | -55°C ~ 150°C (TJ) |
|
XP10NA011HMOSFET N-CH 100V 48.5A TO252 |
1,000 | - |
|
数据表 |
XS10NA011 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 48.5A (Tc) | 6V, 10V | 11mOhm @ 30A, 10V | Surface Mount | 4V @ 250µA | 56 nC @ 10 V | 100 V | ±20V | 2288 pF @ 80 V | - | - | TO-252 | - | 2W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) |
|
PSMQC042N10LS2_R2_00201100V/ 4.2M/ EXCELLECT LOW FOM MO |
5,980 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
TK9R6E15Q5,S1X150V UMOS10-HSD TO-220 9.6MOHM |
380 | - |
|
数据表 |
U-MOSX-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 104A (Ta), 52A (Tc) | 8V, 10V | 9.6mOhm @ 26A, 10V | Through Hole | 4.5V @ 1.1mA | 50 nC @ 10 V | 150 V | ±20V | 3690 pF @ 75 V | - | - | TO-220 | - | 200W (Tc) | 175°C |
|
IRF7807D2MOSFET N-CH 30V 8.3A 8SO |
4,008 | - |
|
数据表 |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | Surface Mount | 1V @ 250µA | 17 nC @ 5 V | 30 V | ±12V | - | - | Schottky Diode (Isolated) | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
IPL60R210P6AUMA1MOSFET N-CH 600V 19.2A 4VSON |
3,000 | - |
|
数据表 |
CoolMOS™ P6 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 19.2A (Tc) | 10V | 210mOhm @ 7.6A, 10V | Surface Mount | 4.5V @ 630µA | 37 nC @ 10 V | 600 V | ±20V | 1750 pF @ 100 V | - | - | PG-VSON-4 | - | 151W (Tc) | -40°C ~ 150°C (TJ) |
|
IRF6643TRPBFXTMA1TRENCH >=100V |
9,624 | - |
|
数据表 |
- | DirectFET™ Isometric MZ | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 6.2A (Ta), 35A (Tc) | 10V | 34.5mOhm @ 7.6A, 10V | Surface Mount | 4.9V @ 150µA | 55 nC @ 10 V | 150 V | ±20V | 2340 pF @ 25 V | - | - | DirectFET™ Isometric MZ | - | 2.8W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) |
|
CMS80N06D-HFMOSFET N-CH 60V 14A/80A DPAK |
2,096 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 14A (Ta), 80A (Tc) | 10V | 7mOhm @ 20A, 10V | Surface Mount | 4V @ 250µA | 118 nC @ 10 V | 60 V | ±20V | 4871 pF @ 30 V | - | - | TO-252 (DPAK) | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) |
