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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IQE022N06LM5CGSCATMA1

IQE022N06LM5CGSCATMA1

OPTIMOS 5 POWER-TRANSISTOR 60V

Infineon Technologies

4,651 -
IQE022N06LM5CGSCATMA1

数据表

OptiMOS™ 5 9-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Ta), 151A (Tc) 4.5V, 10V 2.2mOhm @ 20A, 10V Surface Mount 2.3V @ 48µA 53 nC @ 10 V 60 V ±20V 4420 pF @ 30 V - - PG-WHTFN-9 - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ)
PJQ5590-AU_R2_002A1

PJQ5590-AU_R2_002A1

150V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

3,000 -
PJQ5590-AU_R2_002A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPP034N08N5AKSA1

IPP034N08N5AKSA1

MOSFET N-CH 80V 120A TO220-3

Infineon Technologies

914 -
IPP034N08N5AKSA1

数据表

OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 6V, 10V 3.4mOhm @ 100A, 10V Through Hole 3.8V @ 108µA 87 nC @ 10 V 80 V ±20V 6240 pF @ 40 V - - PG-TO220-3 - 167W (Tc) -55°C ~ 175°C (TJ)
MCAC160N06Y-TP

MCAC160N06Y-TP

MOSFET N-CH 60 160A DFN5060

Micro Commercial Co

5,000 -
MCAC160N06Y-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 160A (Tc) 6V, 10V 2.5mOhm @ 20A, 10V Surface Mount 4V @ 250µA 64 nC @ 10 V 60 V ±20V 3586 pF @ 20 V - - DFN5060 - 150W (Tj) -55°C ~ 175°C (TJ)
TK20G60W,RVQ

TK20G60W,RVQ

MOSFET N CH 600V 20A D2PAK

Toshiba Semiconductor and Storage

1,960 -
TK20G60W,RVQ

数据表

DTMOSIV TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Ta) 10V 155mOhm @ 10A, 10V Surface Mount 3.7V @ 1mA 48 nC @ 10 V 600 V ±30V 1680 pF @ 300 V - - D2PAK - 165W (Tc) 150°C (TJ)
NVMFS6H824NLWFT1G

NVMFS6H824NLWFT1G

MOSFET N-CH 80V 20A/110A 5DFN

onsemi

1,490 -
NVMFS6H824NLWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Ta), 110A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V Surface Mount, Wettable Flank 2V @ 140µA 52 nC @ 10 V 80 V ±20V 2900 pF @ 40 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.8W (Ta), 116W (Tc) -55°C ~ 175°C (TJ)
FDP047N08-F102

FDP047N08-F102

MOSFET N-CH 75V 164A TO220-3

onsemi

3,179 -
FDP047N08-F102

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 164A (Tc) 10V 4.7mOhm @ 80A, 10V Through Hole 4.5V @ 250µA 152 nC @ 10 V 75 V ±20V 9415 pF @ 25 V - - TO-220-3 - 268W (Tc) -55°C ~ 175°C (TJ)
NTMJST2D6N08HTXG

NTMJST2D6N08HTXG

TRENCH 8 80V LFPAK 5X7

onsemi

2,900 -
NTMJST2D6N08HTXG

数据表

- 10-PowerLSOP (0.209", 5.30mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 28A (Ta), 131.5A (Tc) 10V 2.8mOhm @ 50A, 10V Surface Mount 4V @ 250µA 68 nC @ 10 V 80 V ±20V 4405 pF @ 40 V - - 10-TCPAK - 5.3W (Ta), 116W (Tc) -55°C ~ 175°C (TJ)
IPP030N10N5XKSA1

IPP030N10N5XKSA1

TRENCH >=100V

Infineon Technologies

500 -
IPP030N10N5XKSA1

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 6V, 10V 3mOhm @ 100A, 10V Through Hole 3.8V @ 184µA 139 nC @ 10 V 100 V ±20V 10300 pF @ 50 V - - PG-TO220-3-1 - 250W (Tc) -55°C ~ 175°C (TJ)
SIDR220DP-T1-GE3

SIDR220DP-T1-GE3

MOSFET N-CH 25V 87.7A/100A PPAK

Vishay Siliconix

5,973 -
SIDR220DP-T1-GE3

数据表

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 87.7A (Ta), 100A (Tc) 4.5V, 10V 5.8mOhm @ 20A, 10V Surface Mount 2.1V @ 250µA 200 nC @ 10 V 25 V +16V, -12V 1085 pF @ 10 V - - PowerPAK® SO-8DC - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ)
XPQ1R004PB,LXHQ

XPQ1R004PB,LXHQ

40V U-MOS IX-H L-TOGL 1.0MOHM

Toshiba Semiconductor and Storage

4,500 -
XPQ1R004PB,LXHQ

数据表

U-MOSIX-H 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200A (Ta) 6V, 10V 1mOhm @ 100A, 10V Surface Mount 3V @ 500µA 84 nC @ 10 V 40 V ±20V 6890 pF @ 10 V AEC-Q101 - L-TOGL™ Automotive 230W (Tc) 175°C
NVMFWS3D0P04M8LT1G

NVMFWS3D0P04M8LT1G

MV8 P INITIAL PROGRAM

onsemi

1,435 -
NVMFWS3D0P04M8LT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 28A (Ta), 183A (Tc) 4.5V, 10V 2.7mOhm @ 30A,10V Surface Mount 2.4V @ 2mA 124 nC @ 10 V 40 V ±20V 5827 pF @ 20 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.9W (Ta), 171W (Tc) -55°C ~ 175°C (TJ)
FDI150N10

FDI150N10

MOSFET N-CH 100V 57A I2PAK

onsemi

3,026 -
FDI150N10

数据表

PowerTrench® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 57A (Tc) 10V 16mOhm @ 49A, 10V Through Hole 4.5V @ 250µA 69 nC @ 10 V 100 V ±20V 4760 pF @ 25 V - - TO-262 (I2PAK) - 110W (Tc) -55°C ~ 150°C (TJ)
XP10NA011H

XP10NA011H

MOSFET N-CH 100V 48.5A TO252

YAGEO XSEMI

1,000 -
XP10NA011H

数据表

XS10NA011 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 48.5A (Tc) 6V, 10V 11mOhm @ 30A, 10V Surface Mount 4V @ 250µA 56 nC @ 10 V 100 V ±20V 2288 pF @ 80 V - - TO-252 - 2W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
PSMQC042N10LS2_R2_00201

PSMQC042N10LS2_R2_00201

100V/ 4.2M/ EXCELLECT LOW FOM MO

Panjit International Inc.

5,980 -
PSMQC042N10LS2_R2_00201

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
TK9R6E15Q5,S1X

TK9R6E15Q5,S1X

150V UMOS10-HSD TO-220 9.6MOHM

Toshiba Semiconductor and Storage

380 -
TK9R6E15Q5,S1X

数据表

U-MOSX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 104A (Ta), 52A (Tc) 8V, 10V 9.6mOhm @ 26A, 10V Through Hole 4.5V @ 1.1mA 50 nC @ 10 V 150 V ±20V 3690 pF @ 75 V - - TO-220 - 200W (Tc) 175°C
IRF7807D2

IRF7807D2

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies

4,008 -
IRF7807D2

数据表

FETKY™ 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V Surface Mount 1V @ 250µA 17 nC @ 5 V 30 V ±12V - - Schottky Diode (Isolated) 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
IPL60R210P6AUMA1

IPL60R210P6AUMA1

MOSFET N-CH 600V 19.2A 4VSON

Infineon Technologies

3,000 -
IPL60R210P6AUMA1

数据表

CoolMOS™ P6 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 19.2A (Tc) 10V 210mOhm @ 7.6A, 10V Surface Mount 4.5V @ 630µA 37 nC @ 10 V 600 V ±20V 1750 pF @ 100 V - - PG-VSON-4 - 151W (Tc) -40°C ~ 150°C (TJ)
IRF6643TRPBFXTMA1

IRF6643TRPBFXTMA1

TRENCH >=100V

Infineon Technologies

9,624 -
IRF6643TRPBFXTMA1

数据表

- DirectFET™ Isometric MZ Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.2A (Ta), 35A (Tc) 10V 34.5mOhm @ 7.6A, 10V Surface Mount 4.9V @ 150µA 55 nC @ 10 V 150 V ±20V 2340 pF @ 25 V - - DirectFET™ Isometric MZ - 2.8W (Ta), 89W (Tc) -55°C ~ 150°C (TJ)
CMS80N06D-HF

CMS80N06D-HF

MOSFET N-CH 60V 14A/80A DPAK

Comchip Technology

2,096 -
CMS80N06D-HF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta), 80A (Tc) 10V 7mOhm @ 20A, 10V Surface Mount 4V @ 250µA 118 nC @ 10 V 60 V ±20V 4871 pF @ 30 V - - TO-252 (DPAK) - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ)
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