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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RS6L120BHTB1

RS6L120BHTB1

NCH 60V 150A, HSOP8, POWER MOSFE

Rohm Semiconductor

2,500 -
RS6L120BHTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 6V, 10V 2.7mOhm @ 90A, 10V Surface Mount 4V @ 1mA 51 nC @ 10 V 60 V ±20V 4080 pF @ 30 V - - 8-HSOP - 3W (Ta), 104W (Tc) 150°C (TJ)
PSMN5R0-80BS,118

PSMN5R0-80BS,118

MOSFET N-CH 80V 100A D2PAK

Nexperia USA Inc.

4,257 -
PSMN5R0-80BS,118

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 5.1mOhm @ 25A, 10V Surface Mount 4V @ 1mA 101 nC @ 10 V 80 V ±20V 6793 pF @ 40 V - - D2PAK - 270W (Tc) -55°C ~ 175°C (TJ)
IPI60R199CPXKSA2

IPI60R199CPXKSA2

HIGH POWER_LEGACY

Infineon Technologies

500 -
IPI60R199CPXKSA2

数据表

CoolMOS® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 199mOhm @ 9.9A, 10V Through Hole 3.5V @ 660µA 43 nC @ 10 V 600 V ±20V 1520 pF @ 100 V - - PG-TO262-3-1 - 139W (Tc) -55°C ~ 150°C (TJ)
PSMN2R7-30PL,127

PSMN2R7-30PL,127

MOSFET N-CH 30V 100A TO220AB

Nexperia USA Inc.

2,125 -
PSMN2R7-30PL,127

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 2.7mOhm @ 15A, 10V Through Hole 2.15V @ 1mA 66 nC @ 10 V 30 V ±20V 3954 pF @ 12 V - - TO-220AB - 170W (Tc) -55°C ~ 175°C (TJ)
TSM100N06CZ C0G

TSM100N06CZ C0G

MOSFET N-CHANNEL 60V 100A TO220

Taiwan Semiconductor Corporation

4,871 -
TSM100N06CZ C0G

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 6.7mOhm @ 30A, 10V Through Hole 4V @ 250µA 92 nC @ 10 V 60 V ±20V 4382 pF @ 30 V - - TO-220 - 167W (Tc) -55°C ~ 150°C (TJ)
IPP16CN10NGXKSA1

IPP16CN10NGXKSA1

MOSFET N-CH 100V 53A TO220-3

Infineon Technologies

7,979 -
IPP16CN10NGXKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 53A (Tc) 10V 16.5mOhm @ 53A, 10V Through Hole 4V @ 61µA 48 nC @ 10 V 100 V ±20V 3220 pF @ 50 V - - PG-TO220-3 - 100W (Tc) -55°C ~ 175°C (TJ)
SIHU6N80E-GE3

SIHU6N80E-GE3

MOSFET N-CH 800V 5.4A IPAK

Vishay Siliconix

7,285 -
SIHU6N80E-GE3

数据表

E TO-251-3 Long Leads, IPAK, TO-251AB Tube Active N-Channel MOSFET (Metal Oxide) 5.4A (Tc) 10V 940mOhm @ 3A, 10V Through Hole 4V @ 250µA 44 nC @ 10 V 800 V ±30V 827 pF @ 100 V - - IPAK (TO-251) - 78W (Tc) -55°C ~ 150°C (TJ)
IRL520NSTRL

IRL520NSTRL

MOSFET N-CH 100V 10A D2PAK

Infineon Technologies

2,488 -
IRL520NSTRL

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 4V, 10V 180mOhm @ 6A, 10V Surface Mount 2V @ 250µA 20 nC @ 5 V 100 V ±16V 440 pF @ 25 V - - D2PAK - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ)
AOB286L

AOB286L

MOSFET N-CH 80V 13A/70A TO263

Alpha & Omega Semiconductor Inc.

4,583 -
AOB286L

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13A (Ta), 70A (Tc) 6V, 10V 5.7mOhm @ 20A, 10V Surface Mount 3.3V @ 250µA 63 nC @ 10 V 80 V ±20V 3142 pF @ 40 V - - TO-263 (D2PAK) - 2.1W (Ta), 167W (Tc) -55°C ~ 175°C (TJ)
STL220N3LLH7

STL220N3LLH7

MOSFET N-CH 30V 220A POWERFLAT

STMicroelectronics

5,453 -
STL220N3LLH7

数据表

DeepGATE™, STripFET™ VII 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 220A (Tc) 4.5V, 10V 1.1mOhm @ 25A, 10V Surface Mount 2.2V @ 250µA 46 nC @ 4.5 V 30 V ±20V 8650 pF @ 25 V - - PowerFlat™ (5x6) - 113W (Tc) -55°C ~ 150°C (TJ)
SIHB25N50E-GE3

SIHB25N50E-GE3

MOSFET N-CH 500V 26A TO263

Vishay Siliconix

1,000 -
SIHB25N50E-GE3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 26A (Tc) 10V 145mOhm @ 12A, 10V Surface Mount 4V @ 250µA 86 nC @ 10 V 500 V ±30V 1980 pF @ 100 V - - TO-263 (D2PAK) - 250W (Tc) -55°C ~ 150°C (TJ)
XPJR6604PB,LXHQ

XPJR6604PB,LXHQ

40V; UMOS9; 0.66MOHM; S-TOGL

Toshiba Semiconductor and Storage

7,017 -
XPJR6604PB,LXHQ

数据表

U-MOSIX-H 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200A (Ta) 6V, 10V 0.66mOhm @ 100A, 10V Surface Mount 3V @ 1mA 128 nC @ 10 V 40 V ±20V 11380 pF @ 10 V AEC-Q101 - S-TOGL™ Automotive 375W (Tc) 175°C
NVMJS0D9N04CTWG

NVMJS0D9N04CTWG

MOSFET N-CH 40V 52A/342A 8LFPAK

onsemi

2,123 -
NVMJS0D9N04CTWG

数据表

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 52A (Ta), 342A (Tc) 10V 0.81mOhm @ 50A, 10V Surface Mount 4V @ 250µA 117 nC @ 10 V 40 V 20V 7400 pF @ 20 V AEC-Q101 - 8-LFPAK Automotive 4.2W (Ta), 180W (Tc) -55°C ~ 175°C (TJ)
NTB60N06G

NTB60N06G

MOSFET N-CH 60V 60A D2PAK

onsemi

3,517 -
NTB60N06G

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 60A (Ta) 10V 14mOhm @ 30A, 10V Surface Mount 4V @ 250µA 81 nC @ 10 V 60 V ±20V 3220 pF @ 25 V - - D2PAK - 2.4W (Ta), 150W (Tj) -55°C ~ 175°C (TJ)
IRFSL7437TRLPBF

IRFSL7437TRLPBF

MOSFET N-CH 40V 195A TO262

Infineon Technologies

7,228 -
IRFSL7437TRLPBF

数据表

HEXFET®, StrongIRFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 195A (Tc) 6V, 10V 1.8mOhm @ 100A, 10V Through Hole 3.9V @ 150µA 225 nC @ 10 V 40 V ±20V 7330 pF @ 25 V - - TO-262 - 230W (Tc) -55°C ~ 175°C (TJ)
IPT65R190CFD7XTMA1

IPT65R190CFD7XTMA1

MOSFET N-CH 650V 8HSOF

Infineon Technologies

1,990 -
IPT65R190CFD7XTMA1

数据表

CoolMOS™ CFD7 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - - - Surface Mount - - 650 V - - - - PG-HSOF-8-2 - - -
STP8NM50

STP8NM50

MOSFET N-CH 550V 8A TO220AB

STMicroelectronics

7,587 -
STP8NM50

数据表

MDmesh™ II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 800mOhm @ 2.5A, 10V Through Hole 5V @ 250µA 13 nC @ 10 V 550 V ±30V 415 pF @ 25 V - - TO-220 - 100W (Tc) -65°C ~ 150°C (TJ)
STP90N55F4

STP90N55F4

MOSFET N-CH 55V 90A TO220AB

STMicroelectronics

6,251 -
STP90N55F4

数据表

DeepGATE™, STripFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 90A (Tc) 10V 8mOhm @ 45A, 10V Through Hole 4V @ 250µA 90 nC @ 10 V 55 V ±20V 4800 pF @ 25 V - - TO-220 - 150W (Tc) -55°C ~ 175°C (TJ)
TSM3N90CI C0G

TSM3N90CI C0G

MOSFET N-CH 900V 2.5A ITO220AB

Taiwan Semiconductor Corporation

6,494 -
TSM3N90CI C0G

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.5A (Tc) 10V 5.1Ohm @ 1.25A, 10V Through Hole 4V @ 250µA 17 nC @ 10 V 900 V ±30V 748 pF @ 25 V - - ITO-220AB - 94W (Tc) 150°C (TJ)
TSM60N380CZ C0G

TSM60N380CZ C0G

MOSFET N-CHANNEL 600V 11A TO220

Taiwan Semiconductor Corporation

3,717 -
TSM60N380CZ C0G

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 380mOhm @ 5.5A, 10V Through Hole 4V @ 250µA 20.5 nC @ 10 V 600 V ±30V 1040 pF @ 100 V - - TO-220 - 125W (Tc) -55°C ~ 150°C (TJ)
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