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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PSMN015-110P,127

PSMN015-110P,127

MOSFET N-CH 110V 75A TO220AB

Nexperia USA Inc.

3,606 -
PSMN015-110P,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 15mOhm @ 25A, 10V Through Hole 4V @ 1mA 90 nC @ 10 V 110 V ±20V 4900 pF @ 25 V - - TO-220AB - 300W (Tc) -55°C ~ 175°C (TJ)
BUZ31

BUZ31

MOSFET N-CH 200V 14.5A TO220-3

Infineon Technologies

9,744 -
BUZ31

数据表

SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 14.5A (Tc) 5V 200mOhm @ 9A, 5V Through Hole 4V @ 1mA - 200 V ±20V 1120 pF @ 25 V - - PG-TO220-3 - 95W (Tc) -55°C ~ 150°C (TJ)
STW13N60M2

STW13N60M2

MOSFET N-CH 600V 11A TO247

STMicroelectronics

3,903 -
STW13N60M2

数据表

MDmesh™ II Plus TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 380mOhm @ 5.5A, 10V Through Hole 4V @ 250µA 17 nC @ 10 V 600 V ±25V 580 pF @ 100 V - - TO-247-3 - 110W (Tc) -55°C ~ 150°C (TJ)
HUF76439P3

HUF76439P3

MOSFET N-CH 60V 75A TO220-3

onsemi

4,283 -
HUF76439P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 12mOhm @ 75A, 10V Through Hole 3V @ 250µA 84 nC @ 10 V 60 V ±16V 2745 pF @ 25 V - - TO-220-3 - 180W (Tc) -55°C ~ 175°C (TJ)
FQP13N50C

FQP13N50C

MOSFET N-CH 500V 13A TO220-3

onsemi

7,707 -
FQP13N50C

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 480mOhm @ 6.5A, 10V Through Hole 4V @ 250µA 56 nC @ 10 V 500 V ±30V 2055 pF @ 25 V - - TO-220-3 - 195W (Tc) -55°C ~ 150°C (TJ)
SIHP7N60E-GE3

SIHP7N60E-GE3

MOSFET N-CH 600V 7A TO220AB

Vishay Siliconix

7,687 -
SIHP7N60E-GE3

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 600mOhm @ 3.5A, 10V Through Hole 4V @ 250µA 40 nC @ 10 V 600 V ±30V 680 pF @ 100 V - - TO-220AB - 78W (Tc) -55°C ~ 150°C (TJ)
SIHP7N60E-E3

SIHP7N60E-E3

MOSFET N-CH 600V 7A TO220AB

Vishay Siliconix

5,313 -
SIHP7N60E-E3

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 600mOhm @ 3.5A, 10V Through Hole 4V @ 250µA 40 nC @ 10 V 600 V ±30V 680 pF @ 100 V - - TO-220AB - 78W (Tc) -55°C ~ 150°C (TJ)
SI4435DYTR

SI4435DYTR

MOSFET P-CH 30V 8A 8SO

Infineon Technologies

9,505 -
SI4435DYTR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 8A (Tc) 4.5V, 10V 20mOhm @ 8A, 10V Surface Mount 1V @ 250µA 60 nC @ 10 V 30 V ±20V 2320 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
HAT2261H-EL-E

HAT2261H-EL-E

MOSFET N-CH 30V 45A 5LFPAK

Renesas Electronics Corporation

5,586 -
HAT2261H-EL-E

数据表

- SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 45A (Ta) 4.5V, 10V 3.8mOhm @ 22.5A, 10V Surface Mount - 27 nC @ 4.5 V 30 V ±20V 4400 pF @ 10 V - - 5-LFPAK - 25W (Tc) 150°C (TJ)
STD8NM60N

STD8NM60N

MOSFET N-CH 600V 7A DPAK

STMicroelectronics

5,415 -
STD8NM60N

数据表

MDmesh™ II TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 650mOhm @ 3.5A, 10V Surface Mount 4V @ 250µA 19 nC @ 10 V 600 V ±25V 560 pF @ 50 V - - DPAK - 70W (Tc) -55°C ~ 150°C (TJ)
STD8NM60N-1

STD8NM60N-1

MOSFET N-CH 600V 7A IPAK

STMicroelectronics

8,318 -
STD8NM60N-1

数据表

MDmesh™ II TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 650mOhm @ 3.5A, 10V Through Hole 4V @ 250µA 19 nC @ 10 V 600 V ±25V 560 pF @ 50 V - - IPAK - 70W (Tc) -55°C ~ 150°C (TJ)
IPP040N06NXKSA1

IPP040N06NXKSA1

TRENCH 40<-<100V

Infineon Technologies

7,346 -
IPP040N06NXKSA1

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 6V, 10V 4mOhm @ 80A, 10V Through Hole 3.3V @ 50µA 44 nC @ 10 V 60 V ±20V 3375 pF @ 30 V - - PG-TO220-3-1 - 3W (Ta), 107W (Tc) -55°C ~ 175°C (TJ)
IPP086N10N3GHKSA1

IPP086N10N3GHKSA1

MOSFET N-CH 100V 80A TO220-3

Infineon Technologies

9,778 -
IPP086N10N3GHKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 6V, 10V 8.6mOhm @ 73A, 10V Through Hole 3.5V @ 75µA 55 nC @ 10 V 100 V ±20V 3980 pF @ 50 V - - PG-TO220-3 - 125W (Tc) -55°C ~ 175°C (TJ)
RTQ030P02TR

RTQ030P02TR

MOSFET P-CH 20V 3A TSMT6

Rohm Semiconductor

8,850 -
RTQ030P02TR

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 3A (Ta) 2.5V, 4.5V 80mOhm @ 3A, 4.5V Surface Mount 2V @ 1mA 9 nC @ 4.5 V 20 V ±12V 800 pF @ 10 V - - TSMT6 (SC-95) - 1.25W (Ta) 150°C (TJ)
IRF7404TRPBF

IRF7404TRPBF

MOSFET P-CH 20V 6.7A 8SO

Infineon Technologies

4,919 -
IRF7404TRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6.7A (Ta) 2.7V, 4.5V 40mOhm @ 3.2A, 4.5V Surface Mount 700mV @ 250µA (Min) 50 nC @ 4.5 V 20 V ±12V 1500 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
IRF7807TRPBF

IRF7807TRPBF

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies

4,046 -
IRF7807TRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V Surface Mount 1V @ 250µA 17 nC @ 5 V 30 V ±12V - - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
FDS6680AS

FDS6680AS

MOSFET N-CH 30V 11.5A 8SOIC

onsemi

3,470 -
FDS6680AS

数据表

PowerTrench®, SyncFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11.5A (Ta) 4.5V, 10V 10mOhm @ 11.5A, 10V Surface Mount 3V @ 1mA 30 nC @ 10 V 30 V ±20V 1240 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
FDS6670AS

FDS6670AS

MOSFET N-CH 30V 13.5A 8SOIC

onsemi

3,216 -
FDS6670AS

数据表

PowerTrench®, SyncFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 13.5A (Ta) 4.5V, 10V 9mOhm @ 13.5A, 10V Surface Mount 3V @ 1mA 38 nC @ 10 V 30 V ±20V 1540 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
FDD6296

FDD6296

MOSFET N-CH 30V 15A/50A DPAK

onsemi

3,668 -
FDD6296

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 15A (Ta), 50A (Tc) 4.5V, 10V 8.8mOhm @ 15A, 10V Surface Mount 3V @ 250µA 31.5 nC @ 10 V 30 V ±20V 1440 pF @ 15 V - - TO-252AA - 3.8W (Ta), 52W (Tc) -55°C ~ 175°C (TJ)
FQD12N20TM

FQD12N20TM

MOSFET N-CH 200V 9A DPAK

onsemi

6,695 -
FQD12N20TM

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 280mOhm @ 4.5A, 10V Surface Mount 5V @ 250µA 23 nC @ 10 V 200 V ±30V 910 pF @ 25 V - - TO-252AA - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ)
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