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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPB65R310CFDAATMA1

IPB65R310CFDAATMA1

MOSFET N-CH 650V 11.4A D2PAK

Infineon Technologies

2,403 -
IPB65R310CFDAATMA1

数据表

CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V Surface Mount 4.5V @ 440µA 41 nC @ 10 V 650 V ±20V 1110 pF @ 100 V AEC-Q101 - PG-TO263-3 Automotive 104.2W (Tc) -40°C ~ 150°C (TJ)
TSM60NE285CIT C0G

TSM60NE285CIT C0G

MOSFET

Taiwan Semiconductor Corporation

2,000 -
TSM60NE285CIT C0G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 9.5A (Tc) 10V, 12V 274mOhm @ 3.2A, 12V Through Hole 6V @ 1.4mA 22 nC @ 10 V 600 V ±30V 894 pF @ 300 V - - ITO-220TL - 56W (Tc) -55°C ~ 150°C (TJ)
SIHG20N50E-GE3

SIHG20N50E-GE3

MOSFET N-CH 500V 19A TO247AC

Vishay Siliconix

485 -
SIHG20N50E-GE3

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 184mOhm @ 10A, 10V Through Hole 4V @ 250µA 92 nC @ 10 V 500 V ±30V 1640 pF @ 100 V - - TO-247AC - 179W (Tc) -55°C ~ 150°C (TJ)
PJD65N04S-AU_L2_002A1

PJD65N04S-AU_L2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
PJD65N04S-AU_L2_002A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 26A (Ta), 167A (Tc) 4.5V, 10V 2.5mOhm @ 20A, 10V Surface Mount 2.3V @ 50µA 50 nC @ 10 V 40 V ±20V 3148 pF @ 25 V AEC-Q101 - TO-252AA Automotive 3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ)
NVMJS0D9N04CLTWG

NVMJS0D9N04CLTWG

MOSFET N-CH 40V 50A/330A 8LFPAK

onsemi

2,987 -
NVMJS0D9N04CLTWG

数据表

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Ta), 330A (Tc) 4.5V, 10V 0.82mOhm @ 50A, 10V Surface Mount 2V @ 190µA 143 nC @ 10 V 40 V ±20V 8862 pF @ 25 V AEC-Q101 - 8-LFPAK Automotive 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ)
DMT30M9LPS-13

DMT30M9LPS-13

MOSFET BVDSS: 25V-30V POWERDI506

Diodes Incorporated

2,490 -
DMT30M9LPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 1mOhm @ 25A, 10V Surface Mount 3V @ 250µA 160.5 nC @ 10 V 30 V ±20V 12121 pF @ 20 V - - PowerDI5060-8 (Type K) - 2.6W (Ta) -55°C ~ 150°C (TJ)
NVMFWS0D7N04XMT1G

NVMFWS0D7N04XMT1G

40V T10M IN S08FL PACKAGE

onsemi

1,255 -
NVMFWS0D7N04XMT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 331A (Tc) 10V 0.7mOhm @ 50A, 10V Surface Mount, Wettable Flank 3.5V @ 180µA 74.5 nC @ 10 V 40 V ±20V 4657 pF @ 25 V - - 5-DFNW (4.9x5.9) (8-SOFL-WF) - 134W (Tc) -55°C ~ 175°C (TJ)
CDMSJ22013.8-650 SL

CDMSJ22013.8-650 SL

SUPER JUNCTION MOSFETS

Central Semiconductor Corp

493 -
CDMSJ22013.8-650 SL

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 13.8A (Tc) 10V 280mOhm @ 4.4A, 10V Through Hole 4V @ 250µA 30 nC @ 10 V 650 V 30V 1040 pF @ 400 V - - TO-220FP - 35.7W (Tc) -55°C ~ 150°C (TJ)
IPW65R420CFDFKSA2

IPW65R420CFDFKSA2

MOSFET N-CH 650V 8.7A TO247-3

Infineon Technologies

120 -
IPW65R420CFDFKSA2

数据表

CoolMOS™ CFD2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V Through Hole 4.5V @ 300µA 31.5 nC @ 10 V 650 V ±20V 870 pF @ 100 V - - PG-TO247-3-41 - 83.3W (Tc) -55°C ~ 150°C (TJ)
HUF76437S3ST

HUF76437S3ST

MOSFET N-CH 60V 71A D2PAK

onsemi

5,404 -
HUF76437S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 71A (Tc) 4.5V, 10V 14mOhm @ 71A, 10V Surface Mount 3V @ 250µA 71 nC @ 10 V 60 V ±16V 2230 pF @ 25 V - - TO-263 (D2PAK) - 155W (Tc) -55°C ~ 175°C (TJ)
IXTY5N50P

IXTY5N50P

MOSFET N-CH 500V 4.8A TO252

IXYS

8,022 -
IXTY5N50P

数据表

PolarHV™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.8A (Tc) 10V 1.4Ohm @ 2.4A, 10V Surface Mount 5.5V @ 50µA 12.6 nC @ 10 V 500 V ±30V 620 pF @ 25 V - - TO-252AA - 89W (Tc) -55°C ~ 150°C (TJ)
FQA65N06

FQA65N06

MOSFET N-CH 60V 72A TO3P

onsemi

5,896 -
FQA65N06

数据表

QFET® TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 72A (Tc) 10V 16mOhm @ 36A, 10V Through Hole 4V @ 250µA 65 nC @ 10 V 60 V ±25V 2410 pF @ 25 V - - TO-3P - 183W (Tc) -55°C ~ 175°C (TJ)
2SK2715TL

2SK2715TL

MOSFET N-CH 500V 2A CPT3

Rohm Semiconductor

3,414 -
2SK2715TL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2A (Ta) 10V 4Ohm @ 1A, 10V Surface Mount 4V @ 1mA - 500 V ±30V 280 pF @ 10 V - - CPT3 - 20W (Tc) 150°C (TJ)
IRFR3303TRPBF

IRFR3303TRPBF

MOSFET N-CH 30V 33A DPAK

Infineon Technologies

5,384 -
IRFR3303TRPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 33A (Tc) 10V 31mOhm @ 18A, 10V Surface Mount 4V @ 250µA 29 nC @ 10 V 30 V ±20V 750 pF @ 25 V - - TO-252AA (DPAK) - 57W (Tc) -55°C ~ 150°C (TJ)
IRF7204TRPBF

IRF7204TRPBF

MOSFET P-CH 20V 5.3A 8SO

Infineon Technologies

6,678 -
IRF7204TRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.3A (Ta) 4.5V, 10V 60mOhm @ 5.3A, 10V Surface Mount 2.5V @ 250µA 25 nC @ 10 V 20 V ±12V 860 pF @ 10 V - - 8-SO - 2.5W (Tc) -55°C ~ 150°C (TJ)
FDD8770

FDD8770

MOSFET N-CH 25V 35A TO252AA

onsemi

7,241 -
FDD8770

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 4mOhm @ 35A, 10V Surface Mount 2.5V @ 250µA 73 nC @ 10 V 25 V ±20V 3720 pF @ 13 V - - TO-252AA - 115W (Tc) -55°C ~ 175°C (TJ)
IRLR2905ZTRLPBF

IRLR2905ZTRLPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies

6,168 -
IRLR2905ZTRLPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 42A (Tc) 4.5V, 10V 13.5mOhm @ 36A, 10V Surface Mount 3V @ 250µA 35 nC @ 5 V 55 V ±16V 1570 pF @ 25 V - - TO-252AA (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
BSC883N03LSGATMA1

BSC883N03LSGATMA1

MOSFET N-CH 34V 17A/98A TDSON

Infineon Technologies

7,120 -
BSC883N03LSGATMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 17A (Ta), 98A (Tc) 4.5V, 10V 3.8mOhm @ 30A, 10V Surface Mount 2.2V @ 250µA 34 nC @ 10 V 34 V ±20V 2800 pF @ 15 V - - PG-TDSON-8-1 - 2.5W (Ta), 57W (Tc) -55°C ~ 150°C (TJ)
NTMS4920NR2G

NTMS4920NR2G

MOSFET N-CH 30V 10.6A 8SOIC

onsemi

7,095 -
NTMS4920NR2G

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10.6A (Ta) 4.5V, 10V 4.3mOhm @ 7.5A, 10V Surface Mount 3V @ 250µA 58.9 nC @ 10 V 30 V ±20V 4068 pF @ 25 V - - 8-SOIC - 820mW (Ta) -55°C ~ 150°C (TJ)
IRFHM831TRPBF

IRFHM831TRPBF

MOSFET N-CH 30V 14A/40A PQFN

Infineon Technologies

4,115 -
IRFHM831TRPBF

数据表

HEXFET® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta), 40A (Tc) 4.5V, 10V 7.8mOhm @ 12A, 10V Surface Mount 2.35V @ 25µA 16 nC @ 10 V 30 V ±20V 1050 pF @ 25 V - - PQFN (3x3) - 2.5W (Ta), 27W (Tc) -55°C ~ 150°C (TJ)
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