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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
TK14C65W,S1Q

TK14C65W,S1Q

MOSFET N-CH 650V 13.7A I2PAK

Toshiba Semiconductor and Storage

4,153 -
TK14C65W,S1Q

数据表

DTMOSIV TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 13.7A (Ta) 10V 250mOhm @ 6.9A, 10V Through Hole 3.5V @ 690µA 35 nC @ 10 V 650 V ±30V 1300 pF @ 300 V - - I2PAK - 130W (Tc) 150°C (TJ)
TK14C65W5,S1Q

TK14C65W5,S1Q

MOSFET N-CH 650V 13.7A I2PAK

Toshiba Semiconductor and Storage

9,642 -
TK14C65W5,S1Q

数据表

DTMOSIV TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 13.7A (Ta) 10V 300mOhm @ 6.9A, 10V Through Hole 4.5V @ 690µA 40 nC @ 10 V 650 V ±30V 1300 pF @ 300 V - - I2PAK - 130W (Tc) 150°C (TJ)
TK10A60E,S5X

TK10A60E,S5X

MOSFET N-CH 600V 10A TO220SIS

Toshiba Semiconductor and Storage

8,862 -
TK10A60E,S5X

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta) 10V 750mOhm @ 5A, 10V Through Hole 4V @ 1mA 40 nC @ 10 V 600 V ±30V 1300 pF @ 25 V - - TO-220SIS - 45W (Tc) 150°C (TJ)
TK12A50E,S5X

TK12A50E,S5X

MOSFET N-CH 500V 12A TO220SIS

Toshiba Semiconductor and Storage

2,238 -
TK12A50E,S5X

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta) 10V 520mOhm @ 6A, 10V Through Hole 4V @ 1.2mA 40 nC @ 10 V 500 V ±30V 1300 pF @ 25 V - - TO-220SIS - 45W (Tc) 150°C (TJ)
SSM3K15FS,LF

SSM3K15FS,LF

MOSFET N-CH 30V 100MA SSM

Toshiba Semiconductor and Storage

9,987 -
SSM3K15FS,LF

数据表

π-MOSVI SC-75, SOT-416 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100mA (Ta) 2.5V, 4V 4Ohm @ 10mA, 4V Surface Mount 1.5V @ 100µA - 30 V ±20V 7.8 pF @ 3 V - - SSM - 200mW (Ta) 150°C (TJ)
2SK2034TE85LF

2SK2034TE85LF

MOSFET N-CH 20V 100MA SC70

Toshiba Semiconductor and Storage

4,018 -
2SK2034TE85LF

数据表

- SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100mA (Ta) 2.5V 12Ohm @ 10mA, 2.5V Surface Mount - - 20 V 10V 8.5 pF @ 3 V - - SC-70 - 100mW (Ta) 150°C (TJ)
SSM3K17SU,LF(D

SSM3K17SU,LF(D

MOSFET N-CH 50V 100MA USM

Toshiba Semiconductor and Storage

8,316 -
SSM3K17SU,LF(D

数据表

* - Tape & Reel (TR) Obsolete - - 100mA (Ta) - - - - - - - - - - - - - -
SSM3K7002BF,LF

SSM3K7002BF,LF

MOSFET N-CH 60V 200MA SC59

Toshiba Semiconductor and Storage

2,857 -
SSM3K7002BF,LF

数据表

U-MOSIV TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200mA (Ta) 4.5V, 10V 2.1Ohm @ 500mA, 10V Surface Mount - - 60 V ±20V 17 pF @ 25 V - - SC-59 - 200mW (Ta) 150°C (TJ)
SSM3K7002BS,LF

SSM3K7002BS,LF

MOSFET N-CH 60V 200MA S-MINI

Toshiba Semiconductor and Storage

2,704 -
SSM3K7002BS,LF

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200mA (Ta) 4.5V, 10V 2.1Ohm @ 500mA, 10V Surface Mount 2.5V @ 250µA - 60 V ±20V 17 pF @ 25 V - - S-Mini - 200mW (Ta) 150°C (TJ)
2SJ438(AISIN,A,Q)

2SJ438(AISIN,A,Q)

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage

5,112 -
2SJ438(AISIN,A,Q)

数据表

- TO-220-3 Full Pack Bulk Obsolete - - 5A (Tj) - - Through Hole - - - - - - - TO-220NIS - - -
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