Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 76

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK35A65W5,S5X MOSFET N-CH 650V 35A TO220SIS Toshiba Semiconductor and Storage	22	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	10V	95mOhm @ 17.5A, 10V	Through Hole	4.5V @ 2.1mA	115 nC @ 10 V	650 V	±30V	4100 pF @ 300 V	-	-	TO-220SIS	-	50W (Tc)	150°C (TJ)
TK31A60W,S4VX MOSFET N-CH 600V 30.8A TO220SIS Toshiba Semiconductor and Storage	19	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30.8A (Ta)	10V	88mOhm @ 15.4A, 10V	Through Hole	3.7V @ 1.5mA	86 nC @ 10 V	600 V	±30V	3000 pF @ 300 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK040N60Z1,S1F 600V DTMOS6 TO-247 40MOHM Toshiba Semiconductor and Storage	6,022	-	询价单	数据表	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	52A (Ta)	10V	400mOhm @ 21.2A, 10V	Through Hole	4V @ 2.4mA	85 nC @ 10 V	600 V	±30V	5200 pF @ 300 V	-	-	TO-247	-	297W (Tc)	150°C
TK31J60W,S1VQ MOSFET N-CH 600V 30.8A TO3P Toshiba Semiconductor and Storage	25	-	询价单	数据表	DTMOSIV	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30.8A (Ta)	10V	88mOhm @ 15.4A, 10V	Through Hole	3.7V @ 1.5mA	86 nC @ 10 V	600 V	±30V	3000 pF @ 300 V	-	-	TO-3P(N)	-	230W (Tc)	150°C (TJ)
SSM3K16CT(TPL3) MOSFET N-CH 20V 100MA CST3 Toshiba Semiconductor and Storage	3,506	-	询价单	数据表	π-MOSVI	SC-101, SOT-883	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100mA (Ta)	1.5V, 4V	3Ohm @ 10mA, 4V	Surface Mount	1.1V @ 100µA	-	20 V	±10V	9.3 pF @ 3 V	-	-	CST3	-	100mW (Ta)	150°C (TJ)
TK16J60W,S1VQ MOSFET N-CH 600V 15.8A TO3P Toshiba Semiconductor and Storage	4,674	-	询价单	数据表	DTMOSIV	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	Through Hole	3.7V @ 790µA	38 nC @ 10 V	600 V	±30V	1350 pF @ 300 V	-	-	TO-3P(N)	-	130W (Tc)	150°C (TJ)
TK8A10K3,S5Q MOSFET N-CH 100V 8A TO220SIS Toshiba Semiconductor and Storage	7,485	-	询价单	数据表	U-MOSIV	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	8A (Ta)	10V	120mOhm @ 4A, 10V	Through Hole	4V @ 1mA	12.9 nC @ 10 V	100 V	±20V	530 pF @ 10 V	-	-	TO-220SIS	-	18W (Tc)	150°C (TJ)
HN4K03JUTE85LF MOSFET N-CH 20V 100MA USV Toshiba Semiconductor and Storage	7,892	-	询价单	数据表	-	5-TSSOP, SC-70-5, SOT-353	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100mA (Ta)	2.5V	12Ohm @ 10mA, 2.5V	Surface Mount	-	-	20 V	10V	8.5 pF @ 3 V	-	-	5-SSOP	-	200mW (Ta)	150°C (TJ)
SSM3K01T(TE85L,F) MOSFET N-CH 30V 3.2A TSM Toshiba Semiconductor and Storage	2,228	-	询价单	数据表	π-MOSVI	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	3.2A (Ta)	2.5V, 4V	120mOhm @ 1.6A, 4V	Surface Mount	-	-	30 V	±10V	152 pF @ 10 V	-	-	TSM	-	1.25W (Ta)	150°C (TJ)
TK20C60W,S1VQ MOSFET N-CH 600V 20A I2PAK Toshiba Semiconductor and Storage	5,501	-	询价单	数据表	DTMOSIV	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	20A (Ta)	10V	155mOhm @ 10A, 10V	Through Hole	3.7V @ 1mA	48 nC @ 10 V	600 V	±30V	1680 pF @ 300 V	-	-	I2PAK	-	165W (Tc)	150°C (TJ)

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