Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 74

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK72A08N1,S4X MOSFET N-CH 75V 80A TO220SIS Toshiba Semiconductor and Storage	19	-	询价单	数据表	U-MOSVIII-H	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	80A (Ta)	10V	4.5mOhm @ 40A, 10V	Through Hole	4V @ 1mA	175 nC @ 10 V	75 V	±20V	8200 pF @ 10 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK12A45D(STA4,Q,M) MOSFET N-CH 450V 12A TO220SIS Toshiba Semiconductor and Storage	3,091	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	12A (Ta)	10V	520mOhm @ 6A, 10V	Through Hole	4V @ 1mA	24 nC @ 10 V	450 V	±30V	1200 pF @ 25 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK13E25D,S1X(S MOSFET N-CH 250V 13A TO220-3 Toshiba Semiconductor and Storage	6,166	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	13A (Ta)	10V	250mOhm @ 6.5A, 10V	Through Hole	3.5V @ 1mA	25 nC @ 10 V	250 V	±20V	1100 pF @ 100 V	-	-	TO-220-3	-	102W (Tc)	150°C (TJ)
TK10A55D(STA4,Q,M) MOSFET N-CH 550V 10A TO220SIS Toshiba Semiconductor and Storage	3,557	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	10A (Ta)	10V	720mOhm @ 5A, 10V	Through Hole	4V @ 1mA	24 nC @ 10 V	550 V	±30V	1200 pF @ 25 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TPH1100CQ5,LQ 150V UMOS10-H SOP ADVANCE Toshiba Semiconductor and Storage	2,961	-	询价单	数据表	U-MOSX-H	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	90A (Ta), 49A (Tc)	8V, 10V	11.1mOhm @ 24.5A, 10V	Surface Mount	4.5V @ 800µA	38 nC @ 10 V	150 V	±20V	4400 pF @ 75 V	-	-	8-SOP Advance (5x5.75)	-	3W (Ta), 180W (Tc)	175°C
TK72E12N1,S1X MOSFET N CH 120V 72A TO-220 Toshiba Semiconductor and Storage	6,686	-	询价单	数据表	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	72A (Ta)	10V	4.4mOhm @ 36A, 10V	Through Hole	4V @ 1mA	130 nC @ 10 V	120 V	±20V	8100 pF @ 60 V	-	-	TO-220-3	-	255W (Tc)	150°C (TJ)
TK12A53D(STA4,Q,M) MOSFET N-CH 525V 12A TO220SIS Toshiba Semiconductor and Storage	2,379	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	12A (Ta)	10V	580mOhm @ 6A, 10V	Through Hole	4V @ 1mA	25 nC @ 10 V	525 V	±30V	1350 pF @ 25 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK13A50DA(STA4,Q,M MOSFET N-CH 500V 12.5A TO220SIS Toshiba Semiconductor and Storage	13	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	12.5A (Ta)	10V	470mOhm @ 6.3A, 10V	Through Hole	4V @ 1mA	28 nC @ 10 V	500 V	±30V	1550 pF @ 25 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK12A55D(STA4,Q,M) MOSFET N-CH 550V 12A TO220SIS Toshiba Semiconductor and Storage	8,584	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	12A (Ta)	10V	570mOhm @ 6A, 10V	Through Hole	4V @ 1mA	28 nC @ 10 V	550 V	±30V	1550 pF @ 25 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK2R9E10PL,S1X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	3,460	-	询价单	数据表	U-MOSIX-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Ta)	4.5V, 10V	2.9mOhm @ 50A, 10V	Through Hole	2.5V @ 1mA	161 nC @ 10 V	100 V	±20V	9500 pF @ 50 V	-	-	TO-220	-	306W (Tc)	175°C

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