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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
2SK3670(T6CANO,F,M

2SK3670(T6CANO,F,M

MOSFET N-CH TO92MOD

Toshiba Semiconductor and Storage

8,395 -
2SK3670(T6CANO,F,M

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete - - 670mA (Tj) - - Through Hole - - - - - - - TO-92MOD - - -
2SK3670,F(J

2SK3670,F(J

MOSFET N-CH TO92MOD

Toshiba Semiconductor and Storage

8,320 -
2SK3670,F(J

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete - - 670mA (Tj) - - Through Hole - - - - - - - TO-92MOD - - -
2SK3670,F(M

2SK3670,F(M

MOSFET N-CH TO92MOD

Toshiba Semiconductor and Storage

6,416 -
2SK3670,F(M

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete - - 670mA (Tj) - - Through Hole - - - - - - - TO-92MOD - - -
2SJ668(TE16L1,NQ)

2SJ668(TE16L1,NQ)

MOSFET P-CHANNEL 60V 5A PW-MOLD

Toshiba Semiconductor and Storage

9,417 -
2SJ668(TE16L1,NQ)

数据表

U-MOSIII TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5A (Ta) 4V, 10V 170mOhm @ 2.5A, 10V Surface Mount 2V @ 1mA 15 nC @ 10 V 60 V ±20V 700 pF @ 10 V - - PW-MOLD - 20W (Tc) 150°C
SSM3J15CT(TPL3)

SSM3J15CT(TPL3)

MOSFET P-CH 30V 100MA CST3

Toshiba Semiconductor and Storage

6,885 -
SSM3J15CT(TPL3)

数据表

π-MOSVI SC-101, SOT-883 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 100mA (Ta) 2.5V, 4V 12Ohm @ 10mA, 4V Surface Mount - - 30 V ±20V 9.1 pF @ 3 V - - CST3 - 100mW (Ta) 150°C (TJ)
SSM3K17SU,LF

SSM3K17SU,LF

MOSFET N-CH 50V 100MA USM

Toshiba Semiconductor and Storage

6,102 -
SSM3K17SU,LF

数据表

- SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100mA (Ta) - 20Ohm @ 10mA, 4V Surface Mount 1.5V @ 1µA - 50 V - 7 pF @ 3 V - - USM - 150mW (Ta) -
SSM3J114TU(TE85L)

SSM3J114TU(TE85L)

MOSFET P-CH 20V 1.8A UFM

Toshiba Semiconductor and Storage

93 -
SSM3J114TU(TE85L)

数据表

- 3-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.8A (Ta) 1.5V, 4V 149mOhm @ 600mA, 4V Surface Mount 1V @ 1mA 7.7 nC @ 4 V 20 V ±8V 331 pF @ 10 V - - UFM - 500mW (Ta) 150°C (TJ)
SSM3J16CT(TPL3)

SSM3J16CT(TPL3)

MOSFET P-CH 20V 100MA CST3

Toshiba Semiconductor and Storage

2,288 -
SSM3J16CT(TPL3)

数据表

π-MOSVI SC-101, SOT-883 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 100mA (Ta) 1.5V, 4V 8Ohm @ 10mA, 4V Surface Mount 1.1V @ 100µA - 20 V ±10V 11 pF @ 3 V - - CST3 - 100mW (Ta) 150°C (TJ)
SSM3K35MFV(TPL3)

SSM3K35MFV(TPL3)

MOSFET N-CH 20V 180MA VESM

Toshiba Semiconductor and Storage

3,753 -
SSM3K35MFV(TPL3)

数据表

π-MOSVI SOT-723 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 180mA (Ta) 1.2V, 4V 3Ohm @ 50mA, 4V Surface Mount 1V @ 1mA - 20 V ±10V 9.5 pF @ 3 V - - VESM - 150mW (Ta) 150°C (TJ)
2SK1829TE85LF

2SK1829TE85LF

MOSFET N-CH 20V 50MA SC70

Toshiba Semiconductor and Storage

4,612 -
2SK1829TE85LF

数据表

- SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50mA (Ta) 2.5V 40Ohm @ 10mA, 2.5V Surface Mount - - 20 V 10V 5.5 pF @ 3 V - - SC-70 - 100mW (Ta) 150°C (TJ)
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