Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 73

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK8A50DA(STA4,Q,M) MOSFET N-CH 500V 7.5A TO220SIS Toshiba Semiconductor and Storage	3	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	7.5A (Ta)	10V	1.04Ohm @ 3.8A, 10V	Through Hole	4.4V @ 1mA	16 nC @ 10 V	500 V	±30V	700 pF @ 25 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)
TK10A50D(STA4,Q,M) MOSFET N-CH 500V 10A TO220SIS Toshiba Semiconductor and Storage	8,460	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	10A (Ta)	10V	720mOhm @ 5A, 10V	Through Hole	4V @ 1mA	20 nC @ 10 V	500 V	±30V	1050 pF @ 25 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK6A65W,S5X MOSFET N-CH 650V 5.8A TO220SIS Toshiba Semiconductor and Storage	8,164	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	5.8A (Ta)	10V	1Ohm @ 2.9A, 10V	Through Hole	3.5V @ 180µA	11 nC @ 10 V	650 V	±30V	390 pF @ 300 V	-	-	TO-220SIS	-	30W (Tc)	150°C (TJ)
TPHR7404PU,L1Q(M 40V UMOS9 S 0.65MOHM SOP-ADV(N) Toshiba Semiconductor and Storage	6,732	-	询价单	数据表	U-MOSIX-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150A (Tc)	6V, 10V	0.74mOhm @ 50A, 10V	Surface Mount	3V @ 1mA	98 nC @ 10 V	40 V	±20V	9000 pF @ 20 V	-	-	8-SOP Advance (5x5)	-	3W (Ta), 210W (Tc)	175°C
TK7A65W,S5X MOSFET N-CH 650V 6.8A TO220SIS Toshiba Semiconductor and Storage	4,544	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	6.8A (Ta)	10V	780mOhm @ 3.4A, 10V	Through Hole	3.5V @ 250µA	15 nC @ 10 V	650 V	±30V	490 pF @ 300 V	-	-	TO-220SIS	-	30W (Tc)	150°C (TJ)
TK25A20D,S5X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	11	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	25A (Ta)	10V	70mOhm @ 12.5A, 10V	Through Hole	3.5V @ 1mA	60 nC @ 10 V	200 V	±20V	2550 pF @ 100 V	-	-	TO-220SIS	-	45W (Tc)	150°C
TK11A55D(STA4,Q,M) MOSFET N-CH 550V 11A TO220SIS Toshiba Semiconductor and Storage	9,268	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11A (Ta)	10V	630mOhm @ 5.5A, 10V	Through Hole	4V @ 1mA	25 nC @ 10 V	550 V	±30V	1350 pF @ 25 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK19A50W,S5X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	9,144	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18.5A (Ta)	10V	190mOhm @ 7.9A, 10V	Through Hole	3.7V @ 790µA	38 nC @ 10 V	500 V	±30V	1350 pF @ 300 V	-	-	TO-220SIS	-	40W (Tc)	150°C
XPHR7904PS,L1XHQ 40V UMOS9-H SOP ADVANCE Toshiba Semiconductor and Storage	6,891	-	询价单	数据表	U-MOSIX-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150A (Ta)	6V, 10V	0.79mOhm @ 75A, 10V	Surface Mount	3V @ 1mA	85 nC @ 10 V	40 V	±20V	6650 pF @ 10 V	AEC-Q101	-	8-SOP Advance (5x5)	Automotive	3W (Ta), 170W (Tc)	175°C
TK9A65W,S5X MOSFET N-CH 650V 9.3A TO220SIS Toshiba Semiconductor and Storage	2,430	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9.3A (Ta)	10V	500mOhm @ 4.6A, 10V	Through Hole	3.5V @ 350µA	20 nC @ 10 V	650 V	±30V	700 pF @ 300 V	-	-	TO-220SIS	-	30W (Tc)	150°C (TJ)

共 814 条记录«上一页 1... 69 70 71 727374 75 76...82 下一页»