Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 75

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK13A55DA(STA4,QM) MOSFET N-CH 550V 12.5A TO220SIS Toshiba Semiconductor and Storage	9,049	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	12.5A (Ta)	10V	480mOhm @ 6.3A, 10V	Through Hole	4V @ 1mA	38 nC @ 10 V	550 V	±30V	1800 pF @ 25 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK10J80E,S1E MOSFET N-CH 800V 10A TO3P Toshiba Semiconductor and Storage	18	-	询价单	数据表	π-MOSVIII	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	10A (Ta)	10V	1Ohm @ 5A, 10V	Through Hole	4V @ 1mA	46 nC @ 10 V	800 V	±30V	2000 pF @ 25 V	-	-	TO-3P(N)	-	250W (Tc)	150°C (TJ)
TK14A55D(STA4,Q,M) MOSFET N-CH 550V 14A TO220SIS Toshiba Semiconductor and Storage	22	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	14A (Ta)	10V	370mOhm @ 7A, 10V	Through Hole	4V @ 1mA	40 nC @ 10 V	550 V	±30V	2300 pF @ 25 V	-	-	TO-220SIS	-	50W (Tc)	150°C (TJ)
TK17E65W,S1X MOSFET N-CH 650V 17.3A TO220 Toshiba Semiconductor and Storage	23	-	询价单	数据表	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	17.3A (Ta)	10V	200mOhm @ 8.7A, 10V	Through Hole	3.5V @ 900µA	45 nC @ 10 V	650 V	±30V	1800 pF @ 300 V	-	-	TO-220	-	165W (Tc)	150°C (TJ)
TK14N65W,S1F MOSFET N-CH 650V 13.7A TO247 Toshiba Semiconductor and Storage	16	-	询价单	数据表	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	13.7A (Ta)	10V	250mOhm @ 6.9A, 10V	Through Hole	3.5V @ 690µA	35 nC @ 10 V	650 V	±30V	1300 pF @ 300 V	-	-	TO-247	-	130W (Tc)	150°C (TJ)
TK125N60Z1,S1F 6OOV DTMOS6 TO-247 125MOHM Toshiba Semiconductor and Storage	18	-	询价单	数据表	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Ta)	10V	125mOhm @ 6A, 10V	Through Hole	4V @ 730µA	28 nC @ 10 V	600 V	±30V	1620 pF @ 300 V	-	-	TO-247	-	150W (Tc)	150°C
XPQ1R00AQB,LXHQ 100V UMOS10 L-TOGL 1.03MOHM Toshiba Semiconductor and Storage	8,725	-	询价单	数据表	U-MOSX-H	8-PowerBSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	300A (Ta)	6V, 10V	1.03mOhm @ 150A, 10V	Surface Mount	3.5V @ 1.5mA	269 nC @ 10 V	100 V	±20V	21450 pF @ 10 V	AEC-Q101	-	L-TOGL™	Automotive	750W (Tc)	175°C
TK090Z65Z,S1F MOSFET N-CH 650V 30A TO247-4L Toshiba Semiconductor and Storage	25	-	询价单	数据表	DTMOSVI	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30A (Ta)	10V	90mOhm @ 15A, 10V	Through Hole	4V @ 1.27mA	47 nC @ 10 V	650 V	±30V	2780 pF @ 300 V	-	-	TO-247-4L(T)	-	230W (Tc)	150°C
TK110Z65Z,S1F POWER MOSFET TRANSISTOR TO-247-4 Toshiba Semiconductor and Storage	20	-	询价单	数据表	DTMOSVI	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	24A (Ta)	10V	110mOhm @ 12A, 10V	Through Hole	4V @ 1.02mA	40 nC @ 10 V	650 V	±30V	2250 pF @ 300 V	-	-	TO-247-4L(T)	-	190W (Tc)	150°C
TK065Z65Z,S1F POWER MOSFET TRANSISTOR TO-247-4 Toshiba Semiconductor and Storage	25	-	询价单	数据表	DTMOSVI	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	38A (Ta)	10V	65mOhm @ 19A, 10V	Through Hole	4V @ 1.69mA	62 nC @ 10 V	650 V	±30V	3650 pF @ 300 V	-	-	TO-247-4L(T)	-	270W (Tc)	150°C

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