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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STD16N60M6

STD16N60M6

MOSFET N-CH 600V 12A DPAK

STMicroelectronics

2,347 -
STD16N60M6

数据表

MDmesh™ M6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 320mOhm @ 6A, 10V Surface Mount 4.75V @ 250µA 16.7 nC @ 10 V 600 V ±25V 575 pF @ 100 V - - TO-252 (DPAK) - 110W (Tc) -55°C ~ 150°C (TJ)
2SK2231(TE16R1,NQ)

2SK2231(TE16R1,NQ)

MOSFET N-CH 60V 5A PW-MOLD

Toshiba Semiconductor and Storage

7,096 -
2SK2231(TE16R1,NQ)

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5A (Ta) 4V, 10V 160mOhm @ 2.5A, 10V Surface Mount 2V @ 1mA 12 nC @ 10 V 60 V ±20V 370 pF @ 10 V - - PW-MOLD - 20W (Tc) 150°C (TJ)
NVMFS5C670NWFT1G

NVMFS5C670NWFT1G

MOSFET N-CH 60V 17A/71A 5DFN

onsemi

5,135 -
NVMFS5C670NWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17A (Ta), 71A (Tc) 10V 7mOhm @ 11A, 10V Surface Mount, Wettable Flank 4V @ 53µA 14.4 nC @ 10 V 60 V ±20V 1035 pF @ 30 V AEC-Q101 - 5-DFNW (4.9x5.9) (8-SOFL-WF) Automotive 3.6W (Ta), 61W (Tc) -55°C ~ 175°C (TJ)
BSP295L6327HTSA1

BSP295L6327HTSA1

MOSFET N-CH 60V 1.8A SOT223-4

Infineon Technologies

8,080 -
BSP295L6327HTSA1

数据表

SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.8A (Ta) 4.5V, 10V 300mOhm @ 1.8A, 10V Surface Mount 1.8V @ 400µA 17 nC @ 10 V 60 V ±20V 368 pF @ 25 V - - PG-SOT223-4-21 - 1.8W (Ta) -55°C ~ 150°C (TJ)
BSP296L6327HTSA1

BSP296L6327HTSA1

MOSFET N-CH 100V 1.1A SOT223-4

Infineon Technologies

9,110 -
BSP296L6327HTSA1

数据表

SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.1A (Ta) 4.5V, 10V 700mOhm @ 1.1A, 10V Surface Mount 1.8V @ 400µA 17.2 nC @ 10 V 100 V ±20V 364 pF @ 25 V - - PG-SOT223-4 - 1.79W (Ta) -55°C ~ 150°C (TJ)
DMTH84M1SPSQ-13

DMTH84M1SPSQ-13

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated

2,500 -
DMTH84M1SPSQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 6V, 10V 4mOhm @ 20A, 10V Surface Mount 4V @ 250µA 63 nC @ 10 V 80 V ±20V 4209 pF @ 40 V AEC-Q101 - PowerDI5060-8 Automotive 1.6W (Ta) -55°C ~ 175°C (TJ)
BSP373L6327HTSA1

BSP373L6327HTSA1

MOSFET N-CH 100V 1.7A SOT223-4

Infineon Technologies

3,310 -
BSP373L6327HTSA1

数据表

SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.7A (Ta) 10V 300mOhm @ 1.7A, 10V Surface Mount 4V @ 1mA - 100 V ±20V 550 pF @ 25 V - - PG-SOT223-4 - 1.8W (Ta) -55°C ~ 150°C (TJ)
RD3G08CBKHRBTL

RD3G08CBKHRBTL

NCH 40V 80A, TO-252 (DPAK), POWE

Rohm Semiconductor

2,500 -
RD3G08CBKHRBTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 3.1mOhm @ 80A, 10V Surface Mount 2.5V @ 924µA 41 nC @ 10 V 40 V ±20V 2570 pF @ 20 V AEC-Q101 - TO-252 Automotive 96W (Tc) 175°C (TJ)
SI3481DV-T1-E3

SI3481DV-T1-E3

MOSFET P-CH 30V 4A 6TSOP

Vishay Siliconix

3,223 -
SI3481DV-T1-E3

数据表

TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4A (Ta) 4.5V, 10V 48mOhm @ 5.3A, 10V Surface Mount 3V @ 250µA 25 nC @ 10 V 30 V ±20V - - - 6-TSOP - 1.14W (Ta) -55°C ~ 150°C (TJ)
DMTH10H4M5LPSWQ-13

DMTH10H4M5LPSWQ-13

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated

2,170 -
DMTH10H4M5LPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Ta), 107A (Tc) 4.5V, 10V 4.9mOhm @ 30A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 80 nC @ 10 V 100 V ±20V 4843 pF @ 50 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 4.7W (Ta), 136W (Tc) -55°C ~ 175°C (TJ)
SIA450DJ-T1-E3

SIA450DJ-T1-E3

MOSFET N-CH 240V 1.52A PPAK

Vishay Siliconix

4,186 -
SIA450DJ-T1-E3

数据表

TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.52A (Tc) 2.5V, 10V 2.9Ohm @ 700mA, 10V Surface Mount 2.4V @ 250µA 7.04 nC @ 10 V 240 V ±20V 167 pF @ 120 V - - PowerPAK® SC-70-6 - 3.3W (Ta), 15W (Tc) -55°C ~ 150°C (TJ)
ZXMN10A11KTC

ZXMN10A11KTC

MOSFET N-CH 100V 2.4A TO252-2

Diodes Incorporated

9,259 -
ZXMN10A11KTC

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.4A (Ta) 6V, 10V 350mOhm @ 2.6A, 10V Surface Mount 4V @ 250µA 5.4 nC @ 10 V 100 V ±20V 274 pF @ 50 V - - TO-252-3 - 2.11W (Ta) -55°C ~ 150°C (TJ)
SIA426DJ-T1-GE3

SIA426DJ-T1-GE3

MOSFET N-CH 20V 4.5A PPAK SC70-6

Vishay Siliconix

7,739 -
SIA426DJ-T1-GE3

数据表

TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 2.5V, 10V 23.6mOhm @ 9.9A, 10V Surface Mount 1.5V @ 250µA 27 nC @ 10 V 20 V ±12V 1020 pF @ 10 V - - PowerPAK® SC-70-6 - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ)
IPD25CN10NGBUMA1

IPD25CN10NGBUMA1

MOSFET N-CH 100V 35A TO252-3

Infineon Technologies

8,917 -
IPD25CN10NGBUMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 25mOhm @ 35A, 10V Surface Mount 4V @ 39µA 31 nC @ 10 V 100 V ±20V 2070 pF @ 50 V - - PG-TO252-3 - 71W (Tc) -55°C ~ 175°C (TJ)
PMK30EP,518

PMK30EP,518

MOSFET P-CH 30V 14.9A 8SO

Nexperia USA Inc.

3,368 -
PMK30EP,518

数据表

TrenchMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 14.9A (Tc) 10V 19mOhm @ 9.2A, 10V Surface Mount 3V @ 250µA 50 nC @ 10 V 30 V ±20V 2240 pF @ 25 V - - 8-SO - 6.9W (Tc) -55°C ~ 150°C (TJ)
PMK35EP,518

PMK35EP,518

MOSFET P-CH 30V 14.9A 8SO

Nexperia USA Inc.

4,090 -
PMK35EP,518

数据表

TrenchMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 14.9A (Tc) 10V 19mOhm @ 9.2A, 10V Surface Mount 3V @ 250µA 42 nC @ 10 V 30 V ±25V 2100 pF @ 25 V - - 8-SO - 6.9W (Tc) -55°C ~ 150°C (TJ)
SIHP4N80E-BE3

SIHP4N80E-BE3

N-CHANNEL 600V

Vishay Siliconix

990 -
SIHP4N80E-BE3

数据表

E TO-220-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.3A (Tc) 10V 1.27Ohm @ 2A, 10V Through Hole 4V @ 250µA 32 nC @ 10 V 800 V ±30V 622 pF @ 100 V - - TO-220AB - 69W (Tc) -55°C ~ 150°C (TJ)
SIHF640S-GE3

SIHF640S-GE3

MOSFET N-CH 200V 18A D2PAK

Vishay Siliconix

940 -
SIHF640S-GE3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 180mOhm @ 11A, 10V Surface Mount 4V @ 250µA 70 nC @ 10 V 200 V ±20V 1300 pF @ 25 V - - TO-263 (D2PAK) - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ)
IRFI9610GPBF

IRFI9610GPBF

MOSFET P-CH 200V 2A TO220-3

Vishay Siliconix

918 -
IRFI9610GPBF

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active P-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 3Ohm @ 1.2A, 10V Through Hole 4V @ 250µA 13 nC @ 10 V 200 V ±20V 180 pF @ 25 V - - TO-220-3 - 27W (Tc) -55°C ~ 150°C (TJ)
IPB80N06S2L11ATMA2

IPB80N06S2L11ATMA2

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies

863 -
IPB80N06S2L11ATMA2

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 10.7mOhm @ 40A, 10V Surface Mount 2V @ 93µA 80 nC @ 10 V 55 V ±20V 2075 pF @ 25 V - - PG-TO263-3-2 - 158W (Tc) -55°C ~ 175°C (TJ)
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