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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRFHM4231TRPBF

IRFHM4231TRPBF

MOSFET N-CH 25V 40A 8PQFN

Infineon Technologies

5,792 -
IRFHM4231TRPBF

数据表

HEXFET® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 3.4mOhm @ 30A, 10V Surface Mount 2.1V @ 35µA 20 nC @ 10 V 25 V ±20V 1270 pF @ 13 V - - 8-PQFN (3x3) - 2.7W (Ta), 29W (Tc) -55°C ~ 150°C (TJ)
AON7760

AON7760

MOSFET N-CH 25V 33A/75A 8DFN

Alpha & Omega Semiconductor Inc.

9,479 -
AON7760

数据表

AlphaMOS 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 33A (Ta), 75A (Tc) 4.5V, 10V 2mOhm @ 20A, 10V Surface Mount 2.2V @ 250µA 76 nC @ 10 V 25 V ±16V 5520 pF @ 12.5 V - - 8-DFN-EP (3.3x3.3) - 4.1W (Ta), 34.5W (Tc) -55°C ~ 150°C (TJ)
NVMYS003N08LHTWG

NVMYS003N08LHTWG

T8 80V LL LFPAK

onsemi

2,610 -
NVMYS003N08LHTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 22A (Ta), 132A (Tc) 4.5V, 10V 3.3mOhm @ 50A, 10V Surface Mount 2V @ 183µA 64 nC @ 10 V 80 V ±20V 3735 pF @ 40 V AEC-Q101 - LFPAK4 (5x6) Automotive 3.8W (Ta), 137W (Tc) -55°C ~ 175°C (TJ)
SQS401EN-T1_GE3

SQS401EN-T1_GE3

MOSFET P-CH 40V 16A PPAK1212-8

Vishay Siliconix

4,022 -
SQS401EN-T1_GE3

数据表

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 16A (Tc) 4.5V, 10V 29mOhm @ 12A, 10V Surface Mount 2.5V @ 250µA 21.2 nC @ 4.5 V 40 V ±20V 1875 pF @ 20 V - - PowerPAK® 1212-8 - 62.5W (Tc) -55°C ~ 175°C (TJ)
SQS401ENW-T1_GE3

SQS401ENW-T1_GE3

MOSFET P-CH 40V 16A PPAK1212-8

Vishay Siliconix

5,672 -
SQS401ENW-T1_GE3

数据表

TrenchFET® PowerPAK® 1212-8W Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 16A (Tc) 4.5V, 10V 29mOhm @ 12A, 10V Surface Mount 2.5V @ 250µA 21.2 nC @ 4.5 V 40 V ±20V 1875 pF @ 20 V AEC-Q101 - PowerPAK® 1212-8W Automotive 62.5W (Tc) -55°C ~ 175°C (TJ)
ISZ0501NLSATMA1

ISZ0501NLSATMA1

25V, N-CH MOSFET, LOGIC LEVEL, P

Infineon Technologies

6,293 -
ISZ0501NLSATMA1

数据表

OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 3.9mOhm @ 20A, 10V Surface Mount 2V @ 250µA 13.6 nC @ 10 V 25 V ±16V 910 pF @ 12 V - - PG-TDSON-8-25 - 30W (Tc) -55°C ~ 150°C (TJ)
DMT10H9M9SCT

DMT10H9M9SCT

MOSFET BVDSS: 61V~100V TO220AB T

Diodes Incorporated

4,451 -
DMT10H9M9SCT

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 99A (Tc) 6V, 10V 8.8mOhm @ 20A, 10V Through Hole 3.9V @ 250µA 30 nC @ 10 V 100 V ±20V 2085 pF @ 50 V - - TO-220-3 - 2.3W (Ta), 156W (Tc) -55°C ~ 150°C (TJ)
DMT10H9M9LCT

DMT10H9M9LCT

MOSFET BVDSS: 61V~100V TO220AB T

Diodes Incorporated

9,378 -
DMT10H9M9LCT

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 101A (Tc) 4.5V, 10V 8.5mOhm @ 20A, 10V Through Hole 2.5V @ 250µA 40.2 nC @ 10 V 100 V ±20V 2309 pF @ 50 V - - TO-220-3 - 2.3W (Ta), 156W (Tc) -55°C ~ 150°C (TJ)
TSM4NB65CP

TSM4NB65CP

650V, 4A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

7,536 -
TSM4NB65CP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 3.37Ohm @ 2A, 10V Surface Mount 4.5V @ 250µA 13.46 nC @ 10 V 650 V ±30V 549 pF @ 25 V - - TO-252 (DPAK) - 50W (Tc) -55°C ~ 150°C (TJ)
TSM4NB60CP

TSM4NB60CP

600V, 4A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

7,548 -
TSM4NB60CP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 2.5Ohm @ 2A, 10V Surface Mount 4.5V @ 250µA 14.5 nC @ 10 V 600 V ±30V 500 pF @ 25 V - - TO-252 (DPAK) - 50W (Tc) -55°C ~ 150°C (TJ)
TSM5NC50CP

TSM5NC50CP

500V, 5A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

5,130 -
TSM5NC50CP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.38Ohm @ 2.4A, 10V Surface Mount 4.5V @ 250µA 15 nC @ 10 V 500 V ±30V 586 pF @ 50 V - - TO-252 (DPAK) - 83W (Tc) -55°C ~ 150°C (TJ)
TSM4NB65CH

TSM4NB65CH

650V, 4A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

9,009 -
TSM4NB65CH

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 3.37Ohm @ 2A, 10V Through Hole 4.5V @ 250µA 13.46 nC @ 10 V 650 V ±30V 549 pF @ 25 V - - TO-251 (IPAK) - 50W (Tc) -55°C ~ 150°C (TJ)
TSM4NB60CH

TSM4NB60CH

600V, 4A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

3,656 -
TSM4NB60CH

数据表

- TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 2.5Ohm @ 2A, 10V Through Hole 4.5V @ 250µA 14.5 nC @ 10 V 600 V ±30V 500 pF @ 25 V - - TO-251S (IPAK SL) - 50W (Tc) -55°C ~ 150°C (TJ)
IRFR5410TR

IRFR5410TR

MOSFET P-CH 100V 13A DPAK

Infineon Technologies

5,251 -
IRFR5410TR

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 205mOhm @ 7.8A, 10V Surface Mount 4V @ 250µA 58 nC @ 10 V 100 V ±20V 760 pF @ 25 V - - TO-252AA (DPAK) - 66W (Tc) -55°C ~ 150°C (TJ)
BSC019N02KSGAUMA1

BSC019N02KSGAUMA1

MOSFET N-CH 20V 30A/100A TDSON

Infineon Technologies

5,287 -
BSC019N02KSGAUMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Ta), 100A (Tc) 2.5V, 4.5V 1.95mOhm @ 50A, 4.5V Surface Mount 1.2V @ 350µA 85 nC @ 4.5 V 20 V ±12V 13000 pF @ 10 V - - PG-TDSON-8-1 - 2.8W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
STP75N75F4

STP75N75F4

MOSFET N-CH 75V 78A TO220

STMicroelectronics

8,683 -
STP75N75F4

数据表

DeepGATE™, STripFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 78A (Tc) 10V 11mOhm @ 39A, 10V Through Hole 4V @ 250µA 76 nC @ 10 V 75 V ±20V 5015 pF @ 25 V - - TO-220 - 150W (Tc) -55°C ~ 175°C (TJ)
IPA90R1K2C3XKSA2

IPA90R1K2C3XKSA2

MOSFET N-CH 900V 5.1A TO220

Infineon Technologies

9,553 -
IPA90R1K2C3XKSA2

数据表

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.1A (Tc) 10V 1.2Ohm @ 2.8A, 10V Through Hole 3.5V @ 310µA 28 nC @ 10 V 900 V ±20V 710 pF @ 100 V - - PG-TO220-FP - 31W (Tc) -55°C ~ 150°C (TJ)
FQAF11N40

FQAF11N40

MOSFET N-CH 400V 8.8A TO3PF

onsemi

3,720 -
FQAF11N40

数据表

QFET® TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 8.8A (Tc) 10V 480mOhm @ 4.4A, 10V Through Hole 5V @ 250µA 35 nC @ 10 V 400 V ±30V 1400 pF @ 25 V - - TO-3PF - 90W (Tc) -55°C ~ 150°C (TJ)
FQP32N12V2

FQP32N12V2

MOSFET N-CH 120V 32A TO220-3

onsemi

3,940 -
FQP32N12V2

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 32A (Tc) 10V 50mOhm @ 16A, 10V Through Hole 4V @ 250µA 53 nC @ 10 V 120 V ±30V 1860 pF @ 25 V - - TO-220-3 - 150W (Tc) -55°C ~ 175°C (TJ)
HUFA76437P3

HUFA76437P3

MOSFET N-CH 60V 71A TO220-3

onsemi

6,540 -
HUFA76437P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 71A (Tc) 4.5V, 10V 14mOhm @ 71A, 10V Through Hole 3V @ 250µA 71 nC @ 10 V 60 V ±16V 2230 pF @ 25 V - - TO-220-3 - 155W (Tc) -55°C ~ 175°C (TJ)
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