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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPP60R180CM8XKSA1

IPP60R180CM8XKSA1

IPP60R180CM8XKSA1

Infineon Technologies

135 -
IPP60R180CM8XKSA1

数据表

CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 180mOhm @ 5.6A, 10V Through Hole 4.7V @ 140µA 17 nC @ 10 V 600 V ±20V 743 pF @ 400 V - - PG-TO220-3-1 - 142W (Tc) -55°C ~ 150°C (TJ)
TK7P60W,RVQ

TK7P60W,RVQ

MOSFET N CH 600V 7A DPAK

Toshiba Semiconductor and Storage

1,988 -
TK7P60W,RVQ

数据表

DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Ta) 10V 600mOhm @ 3.5A, 10V Surface Mount 3.7V @ 350µA 15 nC @ 10 V 600 V ±30V 490 pF @ 300 V - - DPAK - 60W (Tc) 150°C (TJ)
CDMSJ2207.3-650 SL

CDMSJ2207.3-650 SL

SUPER JUNCTION MOSFETS

Central Semiconductor Corp

500 -
CDMSJ2207.3-650 SL

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V Through Hole 4V @ 250µA 17 nC @ 10 V 650 V 30V 554 pF @ 400 V - - TO-220FP - 32W (Tc) -55°C ~ 150°C (TJ)
NVMJS1D2N04CLTWG

NVMJS1D2N04CLTWG

MOSFET N-CH 40V 41A/237A 8LFPAK

onsemi

2,990 -
NVMJS1D2N04CLTWG

数据表

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 41A (Ta), 237A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V Surface Mount 2V @ 170µA 93 nC @ 10 V 40 V ±20V 5600 pF @ 25 V AEC-Q101 - 8-LFPAK Automotive 3.8W (Ta), 128W (Tc) -55°C ~ 175°C (TJ)
IRFZ48NSTRRPBF

IRFZ48NSTRRPBF

MOSFET N-CH 55V 64A D2PAK

Infineon Technologies

9,031 -
IRFZ48NSTRRPBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 64A (Tc) 10V 14mOhm @ 32A, 10V Surface Mount 4V @ 250µA 81 nC @ 10 V 55 V ±20V 1970 pF @ 25 V - - D2PAK - 3.8W (Ta), 130W (Tc) -55°C ~ 175°C (TJ)
FQP6N90

FQP6N90

MOSFET N-CH 900V 5.8A TO220-3

onsemi

2,475 -
FQP6N90

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.8A (Tc) 10V 1.9Ohm @ 2.9A, 10V Through Hole 5V @ 250µA 52 nC @ 10 V 900 V ±30V 1880 pF @ 25 V - - TO-220-3 - 167W (Tc) -55°C ~ 150°C (TJ)
IRF7706

IRF7706

MOSFET P-CH 30V 7A 8TSSOP

Infineon Technologies

7,281 -
IRF7706

数据表

HEXFET® 8-TSSOP (0.173", 4.40mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 7A (Ta) 4.5V, 10V 22mOhm @ 7A, 10V Surface Mount 2.5V @ 250µA 72 nC @ 10 V 30 V ±20V 2211 pF @ 25 V - - 8-TSSOP - 1.51W (Ta) -55°C ~ 150°C (TJ)
DMT8008SCT

DMT8008SCT

MOSFET BVDSS: 61V~100V TO220AB T

Diodes Incorporated

2,983 -
DMT8008SCT

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 111A (Tc) 10V 7.5mOhm @ 30A, 10V Through Hole 4V @ 1mA 34 nC @ 10 V 80 V ±20V 1950 pF @ 40 V - - TO-220-3 - 2.4W (Ta), 167W (Tc) -55°C ~ 150°C (TJ)
TSM60N900CH C5G

TSM60N900CH C5G

MOSFET N-CH 600V 4.5A TO251

Taiwan Semiconductor Corporation

7,069 -
TSM60N900CH C5G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 900mOhm @ 2.3A, 10V Through Hole 4V @ 250µA 9.7 nC @ 10 V 600 V ±30V 480 pF @ 100 V - - TO-251 (IPAK) - 50W (Tc) -55°C ~ 150°C (TJ)
TSM70N900CH C5G

TSM70N900CH C5G

MOSFET N-CH 700V 4.5A TO251

Taiwan Semiconductor Corporation

8,399 -
TSM70N900CH C5G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 900mOhm @ 1.5A, 10V Through Hole 4V @ 250µA 9.7 nC @ 10 V 700 V ±30V 482 pF @ 100 V - - TO-251 (IPAK) - 50W (Tc) -55°C ~ 150°C (TJ)
IRF734PBF

IRF734PBF

MOSFET N-CH 450V 4.9A TO220AB

Vishay Siliconix

2,789 -
IRF734PBF

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.9A (Tc) 10V 1.2Ohm @ 2.9A, 10V Through Hole 4V @ 250µA 45 nC @ 10 V 450 V ±20V 680 pF @ 25 V - - TO-220AB - 74W (Tc) -55°C ~ 150°C (TJ)
TSM170N06CP

TSM170N06CP

60V, 38A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

2,748 -
TSM170N06CP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 38A (Tc) 4.5V, 10V 17mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 15 nC @ 4.5 V 60 V ±20V 900 pF @ 25 V - - TO-252 (DPAK) - 46W (Tc) -55°C ~ 150°C (TJ)
TSM170N06CH

TSM170N06CH

60V, 38A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

3,374 -
TSM170N06CH

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 38A (Tc) 4.5V, 10V 17mOhm @ 20A, 10V Through Hole 2.5V @ 250µA 15 nC @ 4.5 V 60 V ±20V 900 pF @ 25 V - - TO-251 (IPAK) - 46W (Tc) -55°C ~ 150°C (TJ)
NDP4050

NDP4050

MOSFET N-CH 50V 15A TO220-3

onsemi

6,624 -
NDP4050

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 15A (Tc) - 100mOhm @ 7.5A, 10V Through Hole 4V @ 250µA 17 nC @ 10 V 50 V - 450 pF @ 25 V - - TO-220-3 - - -
STP80N900K6

STP80N900K6

Linear IC's

STMicroelectronics

5,000 -
STP80N900K6

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 900mOhm @ 2A, 10V Through Hole 4V @ 50µA 7 nC @ 10 V 800 V ±30V 362 pF @ 400 V - - TO-220 - 68W (Tc) -55°C ~ 150°C (TJ)
FKI06051

FKI06051

MOSFET N-CH 60V 69A TO220F

Sanken Electric USA Inc.

3,127 -
FKI06051

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 69A (Tc) 4.5V, 10V 4.7mOhm @ 55A, 10V Through Hole 2.5V @ 1.5mA 90.6 nC @ 10 V 60 V ±20V 6210 pF @ 25 V - - TO-220F - 42W (Tc) -55°C ~ 150°C (TJ)
RD3G08CBLHRBTL

RD3G08CBLHRBTL

NCH 40V 80A, TO-252 (DPAK), POWE

Rohm Semiconductor

2,500 -
RD3G08CBLHRBTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 6V, 10V 3.2mOhm @ 80A, 10V Surface Mount 4V @ 924µA 42 nC @ 10 V 40 V ±20V 2800 pF @ 20 V AEC-Q101 - TO-252 Automotive 96W (Tc) 175°C (TJ)
IRF7401TRPBF

IRF7401TRPBF

MOSFET N-CH 20V 8.7A 8SO

Infineon Technologies

6,636 -
IRF7401TRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8.7A (Ta) 2.7V, 4.5V 22mOhm @ 4.1A, 4.5V Surface Mount 700mV @ 250µA (Min) 48 nC @ 4.5 V 20 V ±12V 1600 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
IRLR3714TRPBF

IRLR3714TRPBF

MOSFET N-CH 20V 36A DPAK

Infineon Technologies

5,801 -
IRLR3714TRPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 36A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V Surface Mount 3V @ 250µA 9.7 nC @ 4.5 V 20 V ±20V 670 pF @ 10 V - - TO-252AA (DPAK) - 47W (Tc) -55°C ~ 175°C (TJ)
STF16N65M2

STF16N65M2

MOSFET N-CH 650V 11A TO220FP

STMicroelectronics

998 -
STF16N65M2

数据表

MDmesh™ M2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 360mOhm @ 5.5A, 10V Through Hole 4V @ 250µA 19.5 nC @ 10 V 650 V ±25V 718 pF @ 100 V - - TO-220FP - 25W (Tc) -55°C ~ 150°C (TJ)
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