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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
HUFA75337P3

HUFA75337P3

MOSFET N-CH 55V 75A TO220-3

onsemi

2,879 -
HUFA75337P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 14mOhm @ 75A, 10V Through Hole 4V @ 250µA 109 nC @ 20 V 55 V ±20V 1775 pF @ 25 V - - TO-220-3 - 175W (Tc) -55°C ~ 175°C (TJ)
STFI11N60M2-EP

STFI11N60M2-EP

MOSFET N-CH 600V I2PAK-FP

STMicroelectronics

8,778 -
STFI11N60M2-EP

数据表

MDmesh™ TO-262-3 Full Pack, I2PAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 7.5A (Tc) 10V 595mOhm @ 3.75A, 10V Through Hole 4.75V @ 250µA 12.4 nC @ 10 V 600 V ±25V 390 pF @ 100 V - - I2PAKFP (TO-281) - 25W (Tc) -55°C ~ 150°C (TJ)
IPT60R180CM8XTMA1

IPT60R180CM8XTMA1

IPT60R180CM8XTMA1

Infineon Technologies

1,905 -
IPT60R180CM8XTMA1

数据表

CoolMOS™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Tj) 10V 180mOhm @ 5.6A, 10V Surface Mount 4.7V @ 140µA 17 nC @ 10 V 600 V ±20V 743 pF @ 400 V - - PG-HSOF-8-2 - 119W (Tc) -55°C ~ 150°C (TJ)
IRF720STRRPBF

IRF720STRRPBF

MOSFET N-CH 400V 3.3A D2PAK

Vishay Siliconix

9,253 -
IRF720STRRPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.3A (Tc) 10V 1.8Ohm @ 2A, 10V Surface Mount 4V @ 250µA 20 nC @ 10 V 400 V ±20V 410 pF @ 25 V - - TO-263 (D2PAK) - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
SPB80N06S2-09

SPB80N06S2-09

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies

9,931 -
SPB80N06S2-09

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 9.1mOhm @ 50A, 10V Surface Mount 4V @ 125µA 80 nC @ 10 V 55 V ±20V 3140 pF @ 25 V - - PG-TO263-3-2 - 190W (Tc) -55°C ~ 175°C (TJ)
MCGWF45P04HE3-TP

MCGWF45P04HE3-TP

POWER MOSFET

Micro Commercial Co

9,450 -
MCGWF45P04HE3-TP

数据表

- 8-PowerWDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 45A (Tc) 4.5V, 10V 13mOhm @ 10A, 10V Surface Mount 3V @ 250µA 73.4 nC @ 10 V 40 V ±20V 3136 pF @ 25 V AEC-Q101 - DFN3333-8 Automotive 41.7W (Tj) -55°C ~ 150°C (TJ)
SPB80N06S2L-09

SPB80N06S2L-09

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies

3,897 -
SPB80N06S2L-09

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 8.5mOhm @ 52A, 10V Surface Mount 2V @ 125µA 105 nC @ 10 V 55 V ±20V 3480 pF @ 25 V - - PG-TO263-3-2 - 190W (Tc) -55°C ~ 175°C (TJ)
SI4190BDY-T1-GE3

SI4190BDY-T1-GE3

N-CHANNEL 100 V (D-S) MOSFET SO-

Vishay Siliconix

8,858 -
SI4190BDY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Ta), 17A (Tc) 4.5V, 10V 9.3mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 95 nC @ 10 V 100 V ±20V 4150 pF @ 50 V - - 8-SOIC - 3.8W (Ta), 8.4W (Tc) -55°C ~ 150°C (TJ)
NTMFS0D6N04XMT1G

NTMFS0D6N04XMT1G

40V T10M IN S08FL HEFET GEN 2 PA

onsemi

1,470 -
NTMFS0D6N04XMT1G

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 380A (Tc) 10V 0.57mOhm @ 30A, 10V Surface Mount 3.5V @ 210µA 86.4 nC @ 10 V 40 V ±20V 5574 pF @ 20 V - - 8-DFN (5x6) - 150W (Tc) -55°C ~ 175°C (TJ)
IXTU5N50P

IXTU5N50P

MOSFET N-CH 500V 4.8A TO252

IXYS

3,693 -
IXTU5N50P

数据表

Polar TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.8A (Tc) 10V 1.4Ohm @ 2.4A, 10V Surface Mount 5.5V @ 50µA 12.6 nC @ 10 V 500 V ±30V 620 pF @ 25 V - - TO-252AA - 89W (Tc) -55°C ~ 150°C (TJ)
XP3P3R0MT

XP3P3R0MT

FET P-CH 30V 33.5A 125A PMPAK

YAGEO XSEMI

976 -
XP3P3R0MT

数据表

XP3P3R0 8-PowerLDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 33.5A (Ta), 125A (Tc) 4.5V, 10V 3mOhm @ 20A, 10V Surface Mount 3V @ 250µA 122 nC @ 4.5 V 30 V ±20V 15040 pF @ 15 V - - PMPAK® 5 x 6 - 5W (Ta), 69.4W (Tc) -55°C ~ 150°C (TJ)
AONS66641

AONS66641

N

Alpha & Omega Semiconductor Inc.

784 -
AONS66641

数据表

AlphaSGT™ 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 47A (Ta), 275A (Tc) 8V, 10V 1.4mOhm @ 20A, 10V Surface Mount 3.4V @ 250µA 110 nC @ 10 V 60 V ±20V 5300 pF @ 30 V - - 8-DFN (5x6) - 6.2W (Ta), 208W (Tc) -55°C ~ 150°C (TJ)
NVD360N65S3T4G

NVD360N65S3T4G

SF3 EASY AUTO 360MOHM DPAK

onsemi

7,271 -
NVD360N65S3T4G

数据表

SuperFET® III TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 360mOhm @ 5A, 10V Surface Mount 4.5V @ 200µA 16.8 nC @ 10 V 650 V ±30V 756 pF @ 400 V - - DPAK - 83W (Tc) -55°C ~ 150°C (TJ)
DMTH6004SPSQ-13

DMTH6004SPSQ-13

MOSFET N-CH 60V 100A PWRDI5060

Diodes Incorporated

2,500 -
DMTH6004SPSQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25A (Ta), 100A (Tc) 10V 3.1mOhm @ 50A, 10V Surface Mount 4V @ 250µA 95.4 nC @ 10 V 60 V ±20V 4556 pF @ 30 V - - PowerDI5060-8 - 2.1W (Ta), 167W (Tc) -55°C ~ 175°C (TJ)
NVMFS5C442NLWFAFT1G

NVMFS5C442NLWFAFT1G

MOSFET N-CH 40V 29A/130A 5DFN

onsemi

765 -
NVMFS5C442NLWFAFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 29A (Ta), 130A (Tc) 4.5V, 10V 2.5mOhm @ 50A, 10V Surface Mount, Wettable Flank 2V @ 250µA 50 nC @ 10 V 40 V ±20V 3100 pF @ 25 V AEC-Q101 - 5-DFNW (4.9x5.9) (8-SOFL-WF) Automotive 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ)
STU7NM60N

STU7NM60N

MOSFET N-CH 600V 5A IPAK

STMicroelectronics

2,853 -
STU7NM60N

数据表

MDmesh™ II TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 900mOhm @ 2.5A, 10V Through Hole 4V @ 250µA 14 nC @ 10 V 600 V ±25V 363 pF @ 50 V - - TO-251 (IPAK) - 45W (Tc) 150°C (TJ)
DMTH61M8SPSQ-13

DMTH61M8SPSQ-13

MOSFET BVDSS: 41V~60V POWERDI506

Diodes Incorporated

2,494 -
DMTH61M8SPSQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 215A (Tc) 10V 1.6mOhm @ 30A, 10V Surface Mount 4V @ 250µA 130.6 nC @ 10 V 60 V ±20V 8306 pF @ 30 V AEC-Q101 - PowerDI5060-8 (Type K) Automotive 3.2W (Ta), 167W (Tc) -55°C ~ 175°C (TJ)
TK12P60W,RVQ

TK12P60W,RVQ

MOSFET N CH 600V 11.5A DPAK

Toshiba Semiconductor and Storage

1,930 -
TK12P60W,RVQ

数据表

DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11.5A (Ta) 10V 340mOhm @ 5.8A, 10V Surface Mount 3.7V @ 600µA 25 nC @ 10 V 600 V ±30V 890 pF @ 300 V - - DPAK - 100W (Tc) 150°C (TJ)
IRF840LCPBF-BE3

IRF840LCPBF-BE3

MOSFET N-CHANNEL 500V

Vishay Siliconix

997 -
IRF840LCPBF-BE3

数据表

- TO-220-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 850mOhm @ 4.8A, 10V Through Hole 4V @ 250µA 39 nC @ 10 V 500 V ±30V 1100 pF @ 25 V - - TO-220AB - 125W (Tc) -55°C ~ 150°C (TJ)
XP10N3R5XT

XP10N3R5XT

FET N-CH 100V 28.5A 100A PMPAK

YAGEO XSEMI

997 -
XP10N3R5XT

数据表

XP10N3R5 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 28.5A (Ta), 100A (Tc) 10V 3.5mOhm @ 20A, 10V Surface Mount 4V @ 250µA 134.4 nC @ 10 V 100 V ±20V 6480 pF @ 80 V - - PMPAK® 5 x 6 - 5W (Ta), 125W (Tc) -55°C ~ 150°C (TJ)
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