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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
BUK7Y12-100EX

BUK7Y12-100EX

MOSFET N-CH 100V 85A LFPAK56

Nexperia USA Inc.

3,677 -
BUK7Y12-100EX

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 85A (Tc) 10V 12mOhm @ 25A, 10V Surface Mount 4V @ 1mA 68 nC @ 10 V 100 V ±20V 5067 pF @ 25 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 238W (Tc) -55°C ~ 175°C (TJ)
NTMFS3D0N08XT1G

NTMFS3D0N08XT1G

T10 80V STD NCH MOSFET SO8FL

onsemi

2,790 -
NTMFS3D0N08XT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 154A (Tc) 6V, 10V 2.6mOhm @ 37A, 10V Surface Mount 3.6V @ 184µA 45 nC @ 10 V 80 V ±20V 3200 pF @ 40 V - - 5-DFN (5x6) (8-SOFL) - 133W (Tc) -55°C ~ 175°C (TJ)
TK6P60W,RVQ

TK6P60W,RVQ

MOSFET N CH 600V 6.2A DPAK

Toshiba Semiconductor and Storage

645 -
TK6P60W,RVQ

数据表

DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.2A (Ta) 10V 820mOhm @ 3.1A, 10V Surface Mount 3.7V @ 310µA 12 nC @ 10 V 600 V ±30V 390 pF @ 300 V - - DPAK - 60W (Tc) 150°C (TJ)
TK11P65W,RQ

TK11P65W,RQ

MOSFET N-CH 650V 11.1A DPAK

Toshiba Semiconductor and Storage

462 -
TK11P65W,RQ

数据表

DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11.1A (Ta) 10V 440mOhm @ 5.5A, 10V Surface Mount 3.5V @ 450µA 25 nC @ 10 V 650 V ±30V 890 pF @ 300 V - - DPAK - 100W (Tc) 150°C (TJ)
IRFR9024PBF-BE3

IRFR9024PBF-BE3

P-CHANNEL 60V

Vishay Siliconix

3,000 -
IRFR9024PBF-BE3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 8.8A (Tc) 10V 280mOhm @ 5.3A, 10V Surface Mount 4V @ 250µA 19 nC @ 10 V 60 V ±20V 570 pF @ 25 V - - TO-252AA - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ)
NVMFS5C423NLWFAFT1G

NVMFS5C423NLWFAFT1G

MOSFET N-CH 40V 31A/150A 5DFN

onsemi

2,890 -
NVMFS5C423NLWFAFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 31A (Ta), 150A (Tc) 4.5V, 10V 2mOhm @ 50A, 10V Surface Mount, Wettable Flank 2V @ 250µA 50 nC @ 10 V 40 V ±20V 3100 pF @ 20 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ)
NVTFWS002N04CTAG

NVTFWS002N04CTAG

MOSFET N-CH 40V 27A/136A 8WDFN

onsemi

1,290 -
NVTFWS002N04CTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 27A (Ta), 136A (Tc) 10V 2.4mOhm @ 50A, 10V Surface Mount 3.5V @ 90µA 34 nC @ 10 V 40 V ±20V 2250 pF @ 25 V AEC-Q101 - 8-WDFN (3.3x3.3) Automotive 3.2W (Ta), 85W (Tc) -55°C ~ 175°C (TJ)
BUK7Y3R1-80MX

BUK7Y3R1-80MX

BUK7Y3R1-80M/SOT669/LFPAK

Nexperia USA Inc.

268 -
BUK7Y3R1-80MX

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 160A (Tc) 10V 3.1mOhm @ 25A, 10V Surface Mount 4V @ 1mA 108 nC @ 10 V 80 V ±20V 6986 pF @ 40 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 300W (Tc) -55°C ~ 175°C (TJ)
TSM089N08LCR RLG

TSM089N08LCR RLG

MOSFET N-CH 80V 67A 8PDFN

Taiwan Semiconductor Corporation

8,736 -
TSM089N08LCR RLG

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 67A (Tc) 4.5V, 10V 8.9mOhm @ 12A, 10V Surface Mount 2.5V @ 250µA 90 nC @ 10 V 80 V ±20V 6119 pF @ 40 V - - 8-PDFN (5x6) - 83W (Tc) -55°C ~ 150°C (TJ)
DMTH10H4M5LPSW

DMTH10H4M5LPSW

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated

2,411 -
DMTH10H4M5LPSW

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Ta), 107A (Tc) 4.5V, 10V 4.9mOhm @ 30A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 80 nC @ 10 V 100 V ±20V 4843 pF @ 50 V - - PowerDI5060-8 (Type UX) - 4.7W (Ta), 136W (Tc) -55°C ~ 175°C (TJ)
PJD75P04E-AU_L2_006A1

PJD75P04E-AU_L2_006A1

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
PJD75P04E-AU_L2_006A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 13.3A (Ta), 67A (Tc) 4.5V, 10V 9.4mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 59 nC @ 10 V 40 V ±25V 3477 pF @ 25 V AEC-Q101 - TO-252AA Automotive 3W (Ta), 75W (Tc) -55°C ~ 175°C (TJ)
STB10N60M2

STB10N60M2

MOSFET N-CH 600V 7.5A D2PAK

STMicroelectronics

700 -
STB10N60M2

数据表

MDmesh™ II Plus TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7.5A (Tc) 10V 600mOhm @ 3A, 10V Surface Mount 4V @ 250µA 13.5 nC @ 10 V 600 V ±25V 400 pF @ 100 V - - TO-263 (D2PAK) - 85W (Tc) -55°C ~ 150°C (TJ)
PJP125N06SA-AU_T0_006A1

PJP125N06SA-AU_T0_006A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

600 -
PJP125N06SA-AU_T0_006A1

数据表

- - Tube Active - - - - - - - - - - - - - - - - -
FDS8876

FDS8876

MOSFET N-CH 30V 12.5A 8SOIC

onsemi

2,875 -
FDS8876

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12.5A (Ta) 4.5V, 10V 8.2mOhm @ 12.5A, 10V Surface Mount 2.5V @ 250µA 36 nC @ 10 V 30 V ±20V 1650 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
BUK9832-55A,115

BUK9832-55A,115

MOSFET N-CH 55V 12A SOT223

NXP USA Inc.

2,661 -
BUK9832-55A,115

数据表

TrenchMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 4.5V, 10V 29mOhm @ 8A, 10V Surface Mount 2V @ 1mA - 55 V ±10V 1594 pF @ 25 V AEC-Q101 - SC-73 Automotive 8W (Tc) -55°C ~ 150°C (TJ)
TK50P03M1(T6RSS-Q)

TK50P03M1(T6RSS-Q)

MOSFET N-CH 30V 50A DP

Toshiba Semiconductor and Storage

2,681 -
TK50P03M1(T6RSS-Q)

数据表

U-MOSVI-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Ta) 4.5V, 10V 7.5mOhm @ 25A, 10V Surface Mount 2.3V @ 200µA 25.3 nC @ 10 V 30 V ±20V 1700 pF @ 10 V - - DPAK - 47W (Tc) 150°C (TJ)
IRF9328TRPBF

IRF9328TRPBF

MOSFET P-CH 30V 12A 8SO

Infineon Technologies

3,424 -
IRF9328TRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12A (Tc) 4.5V, 10V 11.9mOhm @ 12A, 10V Surface Mount 2.4V @ 25µA 52 nC @ 10 V 30 V ±20V 1680 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
AO4312

AO4312

MOSFET N-CH 36V 23A 8SOIC

Alpha & Omega Semiconductor Inc.

7,076 -
AO4312

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 23A (Ta) 4.5V, 10V 4.5mOhm @ 20A, 10V Surface Mount 2.3V @ 250µA 34 nC @ 10 V 36 V ±20V 2345 pF @ 18 V - - 8-SOIC - 4.2W (Ta) -55°C ~ 150°C (TJ)
BUK625R2-30C,118

BUK625R2-30C,118

MOSFET N-CH 30V 90A DPAK

Nexperia USA Inc.

7,110 -
BUK625R2-30C,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 90A (Tc) 10V 5.2mOhm @ 15A, 10V Surface Mount 2.8V @ 1mA 54.8 nC @ 10 V 30 V ±16V 3470 pF @ 25 V AEC-Q101 - DPAK Automotive 128W (Tc) -55°C ~ 175°C (TJ)
AOD242

AOD242

MOSFET N-CH 40V 14.5A/54A TO252

Alpha & Omega Semiconductor Inc.

4,320 -
AOD242

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 14.5A (Ta), 54A (Tc) 4.5V, 10V 5.8mOhm @ 20A, 10V Surface Mount 2.3V @ 250µA 28 nC @ 10 V 40 V ±20V 1350 pF @ 20 V - - TO-252 (DPAK) - 2.5W (Ta), 53.5W (Tc) -55°C ~ 175°C (TJ)
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