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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
MCP87030T-U/MF

MCP87030T-U/MF

MOSFET N-CH 25V 100A 8PDFN

Microchip Technology

6,274 -
MCP87030T-U/MF

数据表

- 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V Surface Mount 1.6V @ 250µA 22 nC @ 4.5 V 25 V +10V, -8V 1635 pF @ 12.5 V - - 8-PDFN (5x6) - 2.2W (Ta) -55°C ~ 150°C (TJ)
IRFH4234TRPBF

IRFH4234TRPBF

MOSFET N-CH 25V 22A PQFN

Infineon Technologies

8,408 -
IRFH4234TRPBF

数据表

HEXFET® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 22A (Ta) 4.5V, 10V 4.6mOhm @ 30A Surface Mount 2.1V @ 25µA 17 nC @ 10 V 25 V ±20V 1011 pF @ 13 V - - PQFN (5x6) - 3.5W (Ta), 27W (Tc) -55°C ~ 150°C (TJ)
TN0106N3-G-P013

TN0106N3-G-P013

MOSFET N-CH 60V 350MA TO92-3

Microchip Technology

5,218 -
TN0106N3-G-P013

数据表

- TO-226-3, TO-92-3 (TO-226AA) Tape & Box (TB) Active N-Channel MOSFET (Metal Oxide) 350mA (Tj) 4.5V, 10V 3Ohm @ 500mA, 10V Through Hole 2V @ 500µA - 60 V ±20V 60 pF @ 25 V - - TO-92-3 - 1W (Tc) -55°C ~ 150°C (TJ)
RT1C060UNTR

RT1C060UNTR

MOSFET N-CH 20V 6A 8TSST

Rohm Semiconductor

6,867 -
RT1C060UNTR

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 6A (Ta) 1.5V, 4.5V 28mOhm @ 6A, 4.5V Surface Mount 1V @ 1mA 11 nC @ 4.5 V 20 V ±10V 870 pF @ 10 V - - 8-TSST - 650mW (Ta) 150°C (TJ)
MCH3383-TL-W

MCH3383-TL-W

MOSFET P-CH 12V 3.5A SC70

onsemi

8,681 -
MCH3383-TL-W

数据表

- 3-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.5A (Ta) 0.9V, 2.5V 69mOhm @ 1.5A, 2.5V Surface Mount 800mV @ 1mA 6.2 nC @ 2.5 V 12 V ±5V 1010 pF @ 6 V - - SC-70FL/MCPH3 - 1W (Ta) 150°C (TJ)
TSM061NA03CR RLG

TSM061NA03CR RLG

MOSFET N-CH 30V 88A 8PDFN

Taiwan Semiconductor Corporation

4,806 -
TSM061NA03CR RLG

数据表

- 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 88A (Tc) 4.5V, 10V 6.1mOhm @ 16A, 10V Surface Mount 2.5V @ 250µA 19 nC @ 10 V 30 V ±20V 1133 pF @ 15 V - - 8-PDFN (5x6) - 78W (Tc) -55°C ~ 150°C (TJ)
PJD1NA50_L2_00001

PJD1NA50_L2_00001

500V N-CHANNEL MOSFET

Panjit International Inc.

3,988 -
PJD1NA50_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1A (Ta) 10V 9Ohm @ 500mA, 10V Surface Mount 4V @ 250µA 4.2 nC @ 10 V 500 V ±30V 95 pF @ 25 V - - TO-252AA - 25W (Tc) -55°C ~ 150°C (TJ)
IRFH5053TRPBFXUMA1

IRFH5053TRPBFXUMA1

TRENCH >=100V

Infineon Technologies

3,524 -
IRFH5053TRPBFXUMA1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
STD9N65DM6AG

STD9N65DM6AG

DISCRETE

STMicroelectronics

3,654 -
STD9N65DM6AG

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 440mOhm @ 4.5A, 10V Surface Mount 4.75V @ 250µA 11.7 nC @ 10 V 650 V ±25V 510 pF @ 100 V AEC-Q101 - TO-252 (DPAK) Automotive 89W (Tc) -55°C ~ 150°C (TJ)
IPB16CN10N G

IPB16CN10N G

MOSFET N-CH 100V 53A D2PAK

Infineon Technologies

5,699 -
IPB16CN10N G

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 53A (Tc) 10V 16.5mOhm @ 53A, 10V Surface Mount 4V @ 61µA 48 nC @ 10 V 100 V ±20V 3220 pF @ 50 V - - PG-TO263-3 - 100W (Tc) -55°C ~ 175°C (TJ)
AON6560

AON6560

MOSFET N-CH 30V 84A/200A 8DFN

Alpha & Omega Semiconductor Inc.

7,534 -
AON6560

数据表

- 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 84A (Ta), 200A (Tc) 4.5V, 10V 0.62mOhm @ 20A, 10V Surface Mount 2.2V @ 250µA 325 nC @ 10 V 30 V ±20V 11500 pF @ 15 V - - 8-DFN (5x6) - 7.3W (Ta), 208W (Tc) -55°C ~ 150°C (TJ)
AOW360A70

AOW360A70

MOSFET N-CH 700V 12A TO262

Alpha & Omega Semiconductor Inc.

2,571 -
AOW360A70

数据表

aMOS5™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 360mOhm @ 6A, 10V Through Hole 4V @ 250µA 22.5 nC @ 10 V 700 V ±20V 1360 pF @ 100 V - - TO-262 - 156W (Tc) -55°C ~ 150°C (TJ)
AOWF360A70

AOWF360A70

MOSFET N-CH 700V 12A TO262F

Alpha & Omega Semiconductor Inc.

4,256 -
AOWF360A70

数据表

aMOS5™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tj) 10V 360mOhm @ 6A, 10V Through Hole 4V @ 250µA 22.5 nC @ 10 V 700 V ±20V 1360 pF @ 100 V - - TO-262F - 29.5W (Tc) -55°C ~ 150°C (TJ)
AONS66814

AONS66814

LINEAR IC

Alpha & Omega Semiconductor Inc.

3,568 -
AONS66814

数据表

AlphaSGT2™ 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 41A (Ta), 310A (Tc) 8V, 10V 2.4mOhm @ 20A, 10V Surface Mount 3.8V @ 250µA 95 nC @ 10 V 80 V ±20V 5000 pF @ 40 V - - 8-DFN (5x6) - 8.8W (Ta), 500W (Tc) -55°C ~ 175°C (TJ)
DMTH4002SCTBQ-13

DMTH4002SCTBQ-13

MOSFET BVDSS: 31V~40V TO263 T&R

Diodes Incorporated

3,070 -
DMTH4002SCTBQ-13

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 192A (Tc) 10V 3mOhm @ 90A, 10V Surface Mount 4V @ 250µA 77.5 nC @ 10 V 40 V ±20V 7180 pF @ 20 V AEC-Q101 - TO-263AB (D2PAK) Automotive 6W (Ta), 166.7W (Tc) -55°C ~ 175°C (TJ)
PHP79NQ08LT,127

PHP79NQ08LT,127

MOSFET N-CH 75V 73A TO220AB

Nexperia USA Inc.

2,649 -
PHP79NQ08LT,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 73A (Tc) 10V 16mOhm @ 25A, 10V Through Hole 2V @ 1mA 30 nC @ 5 V 75 V ±15V 3026 pF @ 25 V - - TO-220AB - 157W (Tc) -55°C ~ 175°C (TJ)
BSC022N03S

BSC022N03S

MOSFET N-CH 30V 28A/100A TDSON

Infineon Technologies

2,035 -
BSC022N03S

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 28A (Ta), 100A (Tc) 4.5V, 10V 2.2mOhm @ 50A, 10V Surface Mount 2V @ 100µA 58 nC @ 5 V 30 V ±20V 7490 pF @ 15 V - - PG-TDSON-8-1 - 2.8W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
SPB35N10 G

SPB35N10 G

MOSFET N-CH 100V 35A TO263-3

Infineon Technologies

8,227 -
SPB35N10 G

数据表

SIPMOS® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 44mOhm @ 26.4A, 10V Surface Mount 4V @ 83µA 65 nC @ 10 V 100 V ±20V 1570 pF @ 25 V - - PG-TO263-3-2 - 150W (Tc) -55°C ~ 175°C (TJ)
IPI120N04S402AKSA1

IPI120N04S402AKSA1

MOSFET N-CH 40V 120A TO262-3

Infineon Technologies

500 -
IPI120N04S402AKSA1

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 2.1mOhm @ 100A, 10V Through Hole 4V @ 110µA 134 nC @ 10 V 40 V ±20V 10740 pF @ 25 V - - PG-TO262-3 - 158W (Tc) -55°C ~ 175°C (TJ)
PSMQC040N08NS2_R2_00201

PSMQC040N08NS2_R2_00201

80V/ 4.4M/ BEST-IN-GLASS FOM MOS

Panjit International Inc.

6,000 -
PSMQC040N08NS2_R2_00201

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
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