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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
NTMYS4D5N04CTWG

NTMYS4D5N04CTWG

MOSFET N-CH 40V 20A/80A 4LFPAK

onsemi

3,000 -
NTMYS4D5N04CTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Ta), 80A (Tc) 10V 4.5mOhm @ 35A, 10V Surface Mount 3.5V @ 50µA 18 nC @ 10 V 40 V 20V 1150 pF @ 25 V - - LFPAK4 (5x6) - 3.6W (Ta), 55W (Tc) -55°C ~ 175°C (TJ)
NTMYS3D8N04CLTWG

NTMYS3D8N04CLTWG

MOSFET N-CH 40V 22A/87A 4LFPAK

onsemi

3,000 -
NTMYS3D8N04CLTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 22A (Ta), 87A (Tc) 4.5V, 10V 3.7mOhm @ 20A, 10V Surface Mount 2V @ 50µA 18 nC @ 10 V 40 V 20V 1600 pF @ 25 V - - LFPAK4 (5x6) - 3.6W (Ta), 55W (Tc) -55°C ~ 175°C (TJ)
NVMFS5C442NWFET1G

NVMFS5C442NWFET1G

T6-40V N 2.3 MOHMS SL

onsemi

1,468 -
NVMFS5C442NWFET1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 29A (Ta), 140A (Tc) 10V 2.3mOhm @ 50A, 10V Surface Mount, Wettable Flank 4V @ 90µA 32 nC @ 10 V 40 V ±20V 2100 pF @ 25 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ)
MCAC1D1N03YL-TP

MCAC1D1N03YL-TP

MOSFET N-CH 30 240A DFN5060

Micro Commercial Co

10,000 -
MCAC1D1N03YL-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 240A (Tc) 4.5V, 10V 1.1mOhm @ 50A, 10V Surface Mount 2.5V @ 250µA 114 nC @ 10 V 30 V ±20V 6315 pF @ 15 V - - DFN5060 - 104W (Tj) -55°C ~ 175°C (TJ)
ISZ113N10NM5LF2ATMA1

ISZ113N10NM5LF2ATMA1

ISZ113N10NM5LF2ATMA1 MOSFET

Infineon Technologies

4,970 -
ISZ113N10NM5LF2ATMA1

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
DMTH61M5SPSW-13

DMTH61M5SPSW-13

MOSFET BVDSS: 41V~60V POWERDI506

Diodes Incorporated

1,909 -
DMTH61M5SPSW-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 225A (Tc) 10V 1.5mOhm @ 30A, 10V Surface Mount 4V @ 250µA 130.6 nC @ 10 V 60 V ±20V 8306 pF @ 30 V - - PowerDI5060-8 (SWP) - 3.2W (Ta), 167W (Tc) -55°C ~ 175°C (TJ)
NVMFS5C456NWFT1G

NVMFS5C456NWFT1G

MOSFET N-CH 40V 20A/80A 5DFN

onsemi

1,500 -
NVMFS5C456NWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Ta), 80A (Tc) 10V 4.5mOhm @ 35A, 10V Surface Mount 3.5V @ 250µA 18 nC @ 10 V 40 V ±20V 1150 pF @ 25 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.6W (Ta), 55W (Tc) -55°C ~ 175°C (TJ)
NVMFWS005N10MCLT1G

NVMFWS005N10MCLT1G

PTNG 100V LL SO8FL

onsemi

300 -
NVMFWS005N10MCLT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18.4A (Ta), 108A (Tc) 4.5V, 10V 5.1mOhm @ 34A, 10V Surface Mount, Wettable Flank 3V @ 192µA 55 nC @ 10 V 100 V ±20V 4100 pF @ 50 V AEC-Q101 - 5-DFNW (4.9x5.9) (8-SOFL-WF) Automotive 3.8W (Ta), 131W (Tc) -55°C ~ 175°C (TJ)
PJQ5572A-AU_R2_002A1

PJQ5572A-AU_R2_002A1

100V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

3,000 -
PJQ5572A-AU_R2_002A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
XP6NA2R4IT

XP6NA2R4IT

MOSFET N-CH 60V 93A TO220CFM

YAGEO XSEMI

1,000 -
XP6NA2R4IT

数据表

XP6NA2R4 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 93A (Tc) 10V 2.4mOhm @ 40A, 10V Through Hole 4V @ 250µA 192 nC @ 10 V 60 V ±20V 11600 pF @ 50 V - - TO-220CFM - 1.92W (Ta), 34.7W (Tc) -55°C ~ 150°C (TJ)
IPA60R210CFD7XKSA1

IPA60R210CFD7XKSA1

LOW POWER_NEW

Infineon Technologies

500 -
IPA60R210CFD7XKSA1

数据表

- - Tube Active - - 7A (Tc) - - - - - - - - - - - - - -
TPH4R606NH,L1Q

TPH4R606NH,L1Q

MOSFET N-CH 60V 32A 8SOP

Toshiba Semiconductor and Storage

4,625 -
TPH4R606NH,L1Q

数据表

U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 32A (Ta) 6.5V, 10V 4.6mOhm @ 16A, 10V Surface Mount 4V @ 500µA 49 nC @ 10 V 60 V ±20V 3965 pF @ 30 V - - 8-SOP Advance (5x5) - 1.6W (Ta), 63W (Tc) 150°C (TJ)
PJD45P03E-AU_L2_006A1

PJD45P03E-AU_L2_006A1

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
PJD45P03E-AU_L2_006A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 11.2A (Ta), 42A (Tc) 4.5V, 10V 15mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 32 nC @ 10 V 30 V ±25V 1270 pF @ 25 V AEC-Q101 - TO-252AA Automotive 3W (Ta), 43W (Tc) -55°C ~ 175°C (TJ)
MCB95N04YHE3-TP

MCB95N04YHE3-TP

N-CHANNEL MOSFET,D2-PAK

Micro Commercial Co

1,595 -
MCB95N04YHE3-TP

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 95A (Tc) 10V 3mOhm @ 20A, 10V Surface Mount 4V @ 250µA 38 nC @ 10 V 40 V ±20V 2138 pF @ 20 V AEC-Q101 - D2PAK Automotive 83W (Tj) -55°C ~ 175°C (TJ)
NVMFS4C03NWFT1G

NVMFS4C03NWFT1G

MOSFET N-CH 30V 31.4A/143A 5DFN

onsemi

1,422 -
NVMFS4C03NWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 31.4A (Ta), 143A (Tc) 4.5V, 10V 2.1mOhm @ 30A, 10V Surface Mount 2.2V @ 250µA 45.2 nC @ 10 V 30 V ±20V 3071 pF @ 15 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.71W (Ta), 77W (Tc) -55°C ~ 175°C (TJ)
XP10N3R8P

XP10N3R8P

MOSFET N-CH 100V 130A TO220

YAGEO XSEMI

991 -
XP10N3R8P

数据表

XP10N3R8 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 130A (Tc) 10V 3.88mOhm @ 60A, 10V Through Hole 4V @ 250µA 136 nC @ 10 V 100 V ±20V 6560 pF @ 80 V - - TO-220 - 2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ)
NTMYS6D2N06CLTWG

NTMYS6D2N06CLTWG

MOSFET N-CH 60V 4LFPAK

onsemi

3,000 -
NTMYS6D2N06CLTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17A (Ta), 71A (Tc) - - Surface Mount - - 60 V - - - - LFPAK4 (5x6) - - -
DMP22M2UPS-13

DMP22M2UPS-13

MOSFET P-CH 20V 60A PWRDI5060-8

Diodes Incorporated

2,250 -
DMP22M2UPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60A (Tc) 2.5V, 10V 2.5mOhm @ 25A, 10V Surface Mount 1.4V @ 250µA 476 nC @ 10 V 20 V ±12V 12826 pF @ 10 V - - PowerDI5060-8 (Type K) - 2.3W (Ta) -55°C ~ 150°C (TJ)
IPI65R380C6XKSA1

IPI65R380C6XKSA1

MOSFET N-CH 650V 10.6A TO262-3

Infineon Technologies

500 -
IPI65R380C6XKSA1

数据表

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V Through Hole 3.5V @ 320µA 39 nC @ 10 V 650 V ±20V 710 pF @ 100 V - - PG-TO262-3 - 83W (Tc) -55°C ~ 150°C (TJ)
IPAN60R180CM8XKSA1

IPAN60R180CM8XKSA1

IPAN60R180CM8XKSA1

Infineon Technologies

256 -
IPAN60R180CM8XKSA1

数据表

CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 8A (Tj) 10V 180mOhm @ 5.6A, 10V Through Hole 4.7V @ 140µA 17 nC @ 10 V 600 V ±20V 743 pF @ 400 V - - PG-TO220 Full Pack - 25W (Tc) -55°C ~ 150°C (TJ)
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