富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SIR5110DP-T1-RE3

SIR5110DP-T1-RE3

N-CHANNEL 100 V (D-S) MOSFET POW

Vishay Siliconix

11,972 -
SIR5110DP-T1-RE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13.5A (Ta), 47.6A (Tc) 7.5V, 10V 6mOhm @ 35A, 10V Surface Mount 4V @ 250µA 20 nC @ 10 V 100 V ±20V 920 pF @ 50 V - - PowerPAK® SO-8 - 4.8W (Ta), 59.5W (Tc) -55°C ~ 150°C (TJ)
SIR402DP-T1-GE3

SIR402DP-T1-GE3

MOSFET N-CH 30V 35A PPAK SO-8

Vishay Siliconix

3,000 -
SIR402DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 6mOhm @ 20A, 10V Surface Mount 2.2V @ 250µA 42 nC @ 10 V 30 V ±20V 1700 pF @ 15 V - - PowerPAK® SO-8 - 4.2W (Ta), 36W (Tc) -55°C ~ 150°C (TJ)
RH6R025BHTB1

RH6R025BHTB1

NCH 150V 25A, HSMT8, POWER MOSFE

Rohm Semiconductor

2,679 -
RH6R025BHTB1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 6V, 10V 60mOhm @ 25A, 10V Surface Mount 4V @ 1mA 16.7 nC @ 10 V 150 V ±20V 1010 pF @ 75 V - - 8-HSMT (3.2x3) - 59W (Tc) 150°C (TJ)
IRC830PBF

IRC830PBF

MOSFET N-CH 500V 4.5A TO220-5

Vishay Siliconix

5,132 -
IRC830PBF

数据表

HEXFET® TO-220-5 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V Through Hole 4V @ 250µA 38 nC @ 10 V 500 V ±20V 610 pF @ 25 V - Current Sensing TO-220-5 - 74W (Tc) -55°C ~ 150°C (TJ)
IPD60R1K5CEATMA1

IPD60R1K5CEATMA1

MOSFET N-CH 600V 3.1A TO252-3

Infineon Technologies

18 -
IPD60R1K5CEATMA1

数据表

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 3.1A (Tc) 10V 1.5Ohm @ 1.1A, 10V Surface Mount 3.5V @ 90µA 9.4 nC @ 10 V 600 V ±20V 200 pF @ 100 V - - PG-TO252-3 - 28W (Tc) -40°C ~ 150°C (TJ)
RMW200N03TB

RMW200N03TB

MOSFET N-CH 30V 20A 8PSOP

Rohm Semiconductor

3 -
RMW200N03TB

数据表

- 8-SMD, Flat Lead Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20A (Ta) 4.5V, 10V 4.2mOhm @ 20A, 10V Surface Mount 2.5V @ 1mA 29 nC @ 10 V 30 V ±20V 1780 pF @ 15 V - - 8-PSOP - 3W (Ta) 150°C (TJ)
IRF7478TRPBF

IRF7478TRPBF

MOSFET N-CH 60V 7A 8SO

Infineon Technologies

9,993 -
IRF7478TRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7A (Ta) 4.5V, 10V 26mOhm @ 4.2A, 10V Surface Mount 3V @ 250µA 31 nC @ 4.5 V 60 V ±20V 1740 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
FDS6690AS

FDS6690AS

MOSFET N-CH 30V 10A 8SOIC

onsemi

8,571 -
FDS6690AS

数据表

PowerTrench®, SyncFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta) 4.5V, 10V 12mOhm @ 10A, 10V Surface Mount 3V @ 1mA 23 nC @ 10 V 30 V ±20V 910 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
SIHA12N50E-E3

SIHA12N50E-E3

MOSFET N-CH 500V 10.5A TO220

Vishay Siliconix

995 -
SIHA12N50E-E3

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 10.5A (Tc) 10V 380mOhm @ 6A, 10V Through Hole 4V @ 250µA 50 nC @ 10 V 500 V ±30V 886 pF @ 100 V - - TO-220 Full Pack - 32W (Tc) -55°C ~ 150°C (TJ)
STL125N10F8AG

STL125N10F8AG

AUTOMOTIVE N-CHANNEL 100 V, 4.6

STMicroelectronics

956 -
STL125N10F8AG

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
STL305N4F8AG

STL305N4F8AG

N-CHANNEL ENHANCEMENT MODE 40V,

STMicroelectronics

170 -
STL305N4F8AG

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPA126N10NM3SXKSA1

IPA126N10NM3SXKSA1

MOSFET N-CH 100V 39A TO220

Infineon Technologies

231 -
IPA126N10NM3SXKSA1

数据表

OptiMOS™ 3 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 6V, 10V 12.6mOhm @ 35A, 10V Through Hole 3.5V @ 45µA 35 nC @ 10 V 100 V ±20V 2500 pF @ 50 V - - PG-TO220 Full Pack - 33W (Tc) -55°C ~ 175°C (TJ)
TPH1400CQ5,LQ

TPH1400CQ5,LQ

150V UMOS 10-H SOP ADVANCE

Toshiba Semiconductor and Storage

4,975 -
TPH1400CQ5,LQ

数据表

U-MOSX-H 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 77A (Ta), 32A (Tc) 8V, 10V 14.1mOhm @ 16A, 10V Surface Mount 4.5V @ 600µA 31 nC @ 10 V 150 V ±20V 3800 pF @ 75 V - - 8-SOP Advance (5x5.75) - 3W (Ta), 170W (Tc) 175°C
NTTFS4C50NTAG

NTTFS4C50NTAG

MOSFET N-CH 30V 75A 8WDFN

onsemi

1,292 -
NTTFS4C50NTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 19.4A (Ta) - - Surface Mount - - - - - - - 8-WDFN (3.3x3.3) - - -
STL305N4LF8AG

STL305N4LF8AG

POWERFLAT 5X6 WF

STMicroelectronics

976 -
STL305N4LF8AG

数据表

STripFET™ F8 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 1mOhm @ 60A, 10V Surface Mount 2V @ 250µA 70 nC @ 10 V 40 V ±16V 5400 pF @ 25 V AEC-Q101 - PowerFlat™ (5x6) Automotive 167W (Tc) -55°C ~ 175°C (TJ)
NTMYS4D6N04CLTWG

NTMYS4D6N04CLTWG

MOSFET N-CH 40V 21A/78A LFPAK4

onsemi

7,124 -
NTMYS4D6N04CLTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 21A (Ta), 78A (Tc) 4.5V, 10V 4.5mOhm @ 35A, 10V Surface Mount 2V @ 40µA 23 nC @ 10 V 40 V ±20V 1300 pF @ 25 V - - LFPAK4 (5x6) - 3.6W (Ta), 50W (Tc) -55°C ~ 175°C (TJ)
NVMJS3D0N06CTWG

NVMJS3D0N06CTWG

T6 60V SL LFPAK8 5X6

onsemi

3,000 -
NVMJS3D0N06CTWG

数据表

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 26.9A (Ta), 139.3A (Tc) 10V 2.9mOhm @ 27A, 10V Surface Mount 4V @ 135µA 34 nC @ 10 V 60 V ±20V 2675 pF @ 25 V AEC-Q101 - 8-LFPAK Automotive 4.2W (Ta), 112.5W (Tc) -55°C ~ 175°C (TJ)
TK12P50W,RQ

TK12P50W,RQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage

1,877 -
TK12P50W,RQ

数据表

DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11.5A (Ta) 10V 340mOhm @ 5.8A, 10V Surface Mount 3.7V @ 600µA 25 nC @ 10 V 500 V ±30V 890 pF @ 300 V - - DPAK - 100W (Tc) 150°C
IPP65R420CFDXKSA2

IPP65R420CFDXKSA2

MOSFET N-CH 650V 8.7A TO220-3

Infineon Technologies

488 -
IPP65R420CFDXKSA2

数据表

CoolMOS™ CFD2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V Through Hole 4.5V @ 300µA 31.5 nC @ 10 V 650 V ±20V 870 pF @ 100 V - - PG-TO220-3 - 83.3W (Tc) -55°C ~ 150°C (TJ)
TK6Q60W,S1VQ

TK6Q60W,S1VQ

MOSFET N-CH 600V 6.2A IPAK

Toshiba Semiconductor and Storage

183 -
TK6Q60W,S1VQ

数据表

DTMOSIV TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 6.2A (Ta) 10V 820mOhm @ 3.1A, 10V Through Hole 3.7V @ 310µA 12 nC @ 10 V 600 V ±30V 390 pF @ 300 V - - IPAK - 60W (Tc) 150°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户