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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPB80P04P4L08ATMA2

IPB80P04P4L08ATMA2

MOSFET P-CH 40V 80A TO263-3

Infineon Technologies

1,986 -
IPB80P04P4L08ATMA2

数据表

OptiMOS™ P2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 8.2mOhm @ 80A, 10V Surface Mount 2.2V @ 120µA 92 nC @ 10 V 40 V +5V, -16V 5430 pF @ 25 V - - PG-TO263-3-2 - 75W (Tc) -55°C ~ 175°C (TJ)
IPD65R420CFDATMA2

IPD65R420CFDATMA2

MOSFET N-CH 650V 8.7A TO252-3

Infineon Technologies

2,490 -
IPD65R420CFDATMA2

数据表

CoolMOS™ CFD2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V Surface Mount 4.5V @ 300µA 31.5 nC @ 10 V 650 V ±20V 870 pF @ 100 V - - PG-TO252-3-341 - 83.3W (Tc) -55°C ~ 150°C (TJ)
DMTH41M8SPSQ-13

DMTH41M8SPSQ-13

MOSFET N-CH 40V 100A PWRDI5060-8

Diodes Incorporated

1,215 -
DMTH41M8SPSQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 1.8mOhm @ 30A, 10V Surface Mount 4V @ 250µA 79.5 nC @ 10 V 40 V ±20V 6968 pF @ 20 V AEC-Q101 - PowerDI5060-8 (Type K) Automotive 3.03W -55°C ~ 175°C (TJ)
DMTH8003SPS-13

DMTH8003SPS-13

MOSFET N-CH 80V 100A PWRDI5060-8

Diodes Incorporated

11,953 -
DMTH8003SPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 6V, 10V 3.9mOhm @ 30A, 10V Surface Mount 4V @ 250µA 124.3 nC @ 10 V 80 V ±20V 8952 pF @ 40 V - - PowerDI5060-8 (Type K) - 2.9W -55°C ~ 175°C (TJ)
XP6NA1R7CMT

XP6NA1R7CMT

FET N-CH 60V 41.6A 190A PMPAK

YAGEO XSEMI

1,000 -
XP6NA1R7CMT

数据表

XP6NA1R7C 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 41.6A (Ta), 190A (Tc) 10V 1.7mOhm @ 20A, 10V Surface Mount 4V @ 250µA 160 nC @ 10 V 60 V ±20V 8800 pF @ 50 V - - PMPAK® 5 x 6 - 5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
BUK7Y1R0-40NX

BUK7Y1R0-40NX

BUK7Y1R0-40N/SOT669/LFPAK

Nexperia USA Inc.

980 -
BUK7Y1R0-40NX

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 320A (Tc) 10V 0.97mOhm @ 25A, 10V Surface Mount 3.6V @ 1mA 189 nC @ 10 V 40 V ±20V 10622 pF @ 25 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 268W (Tc) -55°C ~ 175°C (TJ)
TK8P65W,RQ

TK8P65W,RQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage

1,974 -
TK8P65W,RQ

数据表

DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7.8A (Ta) 10V 670mOhm @ 3.9A, 10V Surface Mount 3.5V @ 300µA 16 nC @ 10 V 650 V ±30V 570 pF @ 300 V - - DPAK - 80W (Tc) 150°C
PSMN7R2-100YSFX

PSMN7R2-100YSFX

NEXTPOWER 80/100V MOSFETS

Nexperia USA Inc.

1,771 -
PSMN7R2-100YSFX

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 111A (Tc) 7V, 10V 6.9mOhm @ 25A, 10V Surface Mount 4V @ 1mA 75 nC @ 10 V 100 V ±20V 4818 pF @ 50 V - - LFPAK56, Power-SO8 - 194W (Tc) -55°C ~ 175°C (TJ)
IAUCN04S6N013TATMA1

IAUCN04S6N013TATMA1

MOSFET_(20V 40V)

Infineon Technologies

1,150 -
IAUCN04S6N013TATMA1

数据表

OptiMOS™ 6 10-LSOP (0.216", 5.48mm Width) Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 230A (Tc) 7V, 10V 1.32mOhm @ 60A, 10V Surface Mount 3V @ 60µA 69 nC @ 10 V 40 V ±20V 4810 pF @ 25 V AEC-Q101 - PG-LHDSO-10-1 Automotive 133W (Tc) -55°C ~ 175°C (TJ)
XP4NAR95CMT-A

XP4NAR95CMT-A

MOSFET N-CH 45V 58A 100A PMPAK

YAGEO XSEMI

1,000 -
XP4NAR95CMT-A

数据表

XP4NAR95 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 58A (Ta), 100A (Tc) 4.5V, 10V 0.95mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 89.6 nC @ 4.5 V 45 V ±20V 8880 pF @ 30 V - - PMPAK® 5 x 6 - 5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
MCB80N06YHE3-TP

MCB80N06YHE3-TP

POWER MOSFET

Micro Commercial Co

775 -
MCB80N06YHE3-TP

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 31 nC @ 10 V 60 V ±20V 1677 pF @ 25 V AEC-Q101 - D2PAK Automotive 125W (Tj) -55°C ~ 175°C (TJ)
DMTH10H4M6SPS-13

DMTH10H4M6SPS-13

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated

2,440 -
DMTH10H4M6SPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Ta), 100A (Tc) 10V 4.6mOhm @ 30A, 10V Surface Mount 4V @ 250µA 66 nC @ 10 V 100 V ±20V 4327 pF @ 50 V - - PowerDI5060-8 - 2.7W (Ta), 136W (Tc) -55°C ~ 175°C (TJ)
PJD95P04E-AU_L2_006A1

PJD95P04E-AU_L2_006A1

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,940 -
PJD95P04E-AU_L2_006A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
NDP603AL

NDP603AL

MOSFET N-CH 30V 25A TO220-3

onsemi

5,216 -
NDP603AL

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 25A (Tc) 4.5V, 10V 22mOhm @ 25A, 10V Through Hole 3V @ 250µA 40 nC @ 10 V 30 V ±20V 1100 pF @ 15 V - - TO-220-3 - 50W (Tc) -65°C ~ 175°C (TJ)
IRF634SPBF

IRF634SPBF

MOSFET N-CH 250V 8.1A D2PAK

Vishay Siliconix

4,556 -
IRF634SPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 8.1A (Tc) 10V 450mOhm @ 5.1A, 10V Surface Mount 4V @ 250µA 41 nC @ 10 V 250 V ±20V 770 pF @ 25 V - - TO-263 (D2PAK) - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ)
NVMFS5C450NLWFAFT1G

NVMFS5C450NLWFAFT1G

MOSFET N-CH 40V 110A 5DFN

onsemi

1,850 -
NVMFS5C450NLWFAFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 110A (Tc) 4.5V, 10V 2.8mOhm @ 40A, 10V Surface Mount, Wettable Flank 2V @ 250µA 35 nC @ 10 V 40 V ±20V 2100 pF @ 20 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 68W (Tc) -55°C ~ 175°C (TJ)
SIHP12N50E-BE3

SIHP12N50E-BE3

N-CHANNEL 500V

Vishay Siliconix

836 -
SIHP12N50E-BE3

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 10.5A (Tc) 10V 380mOhm @ 6A, 10V Through Hole 4V @ 250µA 50 nC @ 10 V 500 V ±30V 886 pF @ 100 V - - TO-220AB - 114W (Tc) -55°C ~ 150°C (TJ)
DMT61M5SPSW-13

DMT61M5SPSW-13

MOSFET BVDSS: 41V~60V POWERDI506

Diodes Incorporated

2,181 -
DMT61M5SPSW-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 215A (Tc) 10V 1.5mOhm @ 30A, 10V Surface Mount 4V @ 250µA 130.6 nC @ 10 V 60 V ±20V 8306 pF @ 30 V - - PowerDI5060-8 (SWP) - 2.7W (Ta), 139W (Tc) -55°C ~ 150°C (TJ)
FDPF041N06BL1-F154

FDPF041N06BL1-F154

MOSFET N-CH 60V 77A TO220F-3

onsemi

772 -
FDPF041N06BL1-F154

数据表

PowerTrench® TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 77A (Tc) - 4.1mOhm @ 77A, 10V Through Hole 4V @ 250µA 69 nC @ 10 V 60 V ±20V 5690 pF @ 30 V - - TO-220F-3 - 44.1W (Tc) -55°C ~ 175°C (TJ)
NTMYS9D3N06CLTWG

NTMYS9D3N06CLTWG

MOSFET N-CH 60V T6 LFPAK4

onsemi

2,995 -
NTMYS9D3N06CLTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active - - 14A (Ta), 50A (Tc) - - Surface Mount - - - - - - - LFPAK4 (5x6) - - -
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