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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
TQM032NH04CR RLG

TQM032NH04CR RLG

40V, 81A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

5,000 -
TQM032NH04CR RLG

数据表

PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 23A (Ta), 81A (Tc) 7V, 10V 3.2mOhm @ 40A, 10V Surface Mount, Wettable Flank 3.6V @ 250µA 67.5 nC @ 10 V 40 V ±20V 4344 pF @ 25 V AEC-Q101 - 8-PDFNU (4.9x5.75) Automotive 115W (Tc) -55°C ~ 175°C (TJ)
DMP6018LPS-13

DMP6018LPS-13

MOSFET BVDSS: 41V~60V POWERDI506

Diodes Incorporated

2,373 -
DMP6018LPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 18mOhm @ 17A, 10V Surface Mount 2.5V @ 250µA 13.7 nC @ 10 V 60 V ±20V 3505 pF @ 30 V - - PowerDI5060-8 - 2.6W (Ta), 113W (Tc) -55°C ~ 150°C (TJ)
R6009RND3TL1

R6009RND3TL1

600V 9A TO-252, PRESTOMOS WITH I

Rohm Semiconductor

2,286 -
R6009RND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 15V 665mOhm @ 4.5A, 15V Surface Mount 7V @ 5.5mA 22 nC @ 15 V 600 V ±30V 640 pF @ 100 V - - TO-252 - 125W (Tc) 150°C (TJ)
IRF9Z14STRLPBF

IRF9Z14STRLPBF

MOSFET P-CH 60V 6.7A D2PAK

Vishay Siliconix

766 -
IRF9Z14STRLPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 6.7A (Tc) 10V 500mOhm @ 4A, 10V Surface Mount 4V @ 250µA 12 nC @ 10 V 60 V ±20V 270 pF @ 25 V - - TO-263 (D2PAK) - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ)
STU2N105K5

STU2N105K5

MOSFET N-CH 1050V 1.5A IPAK

STMicroelectronics

7,717 -
STU2N105K5

数据表

MDmesh™ K5 TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 1.5A (Tc) 10V 8Ohm @ 750mA, 10V Through Hole 5V @ 100µA 10 nC @ 10 V 1050 V ±30V 115 pF @ 100 V - - TO-251 (IPAK) - 60W (Tc) -55°C ~ 150°C (TJ)
IRFR9120PBF-BE3

IRFR9120PBF-BE3

P-CHANNEL 100V

Vishay Siliconix

3,000 -
IRFR9120PBF-BE3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active P-Channel MOSFET (Metal Oxide) 5.6A (Tc) 10V 600mOhm @ 3.4A, 10V Surface Mount 4V @ 250µA 18 nC @ 10 V 100 V ±20V 390 pF @ 25 V - - TO-252AA - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ)
PJQ5520-AU_R2_002A1

PJQ5520-AU_R2_002A1

30V N-CHANNEL (LL) SGT MOSFET

Panjit International Inc.

3,000 -
PJQ5520-AU_R2_002A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
STP3NK60ZFP

STP3NK60ZFP

MOSFET N-CH 600V 2.4A TO220FP

STMicroelectronics

1,453 -
STP3NK60ZFP

数据表

SuperMESH™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 2.4A (Tc) 10V 3.6Ohm @ 1.2A, 10V Through Hole 4.5V @ 50µA 11.8 nC @ 10 V 600 V ±30V 311 pF @ 25 V - - TO-220FP - 20W (Tc) -55°C ~ 150°C (TJ)
NTMFS0D9N04XLT1G

NTMFS0D9N04XLT1G

40V T10S IN S08FL PACKAGE

onsemi

798 -
NTMFS0D9N04XLT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 278A (Tc) 4.5V, 10V 0.9mOhm @ 35A, 10V Surface Mount 2.2V @ 180µA 70 nC @ 10 V 40 V ±20V 5160 pF @ 20 V - - 5-DFN (5x6) (8-SOFL) - 136W (Tc) -55°C ~ 175°C (TJ)
IRFR320TRPBF-BE3

IRFR320TRPBF-BE3

N-CHANNEL 400V

Vishay Siliconix

1,918 -
IRFR320TRPBF-BE3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V Surface Mount 4V @ 250µA 20 nC @ 10 V 400 V ±20V 350 pF @ 25 V - - TO-252AA - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ)
IRFB3306PBFXKMA1

IRFB3306PBFXKMA1

TRENCH 40<-<100V

Infineon Technologies

988 -
IRFB3306PBFXKMA1

数据表

- - Tube Active - - - - - - - - - - - - - - - - -
STF8NM50N

STF8NM50N

MOSFET N-CH 500V 5A TO220FP

STMicroelectronics

950 -
STF8NM50N

数据表

MDmesh™ II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 790mOhm @ 2.5A, 10V Through Hole 4V @ 250µA 14 nC @ 10 V 500 V ±25V 364 pF @ 50 V - - TO-220FP - 20W (Tc) -55°C ~ 150°C (TJ)
IPB80N06S405ATMA2

IPB80N06S405ATMA2

MOSFET N-CH 60V 80A TO263-3

Infineon Technologies

231 -
IPB80N06S405ATMA2

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 5.7mOhm @ 80A, 10V Surface Mount 4V @ 60µA 81 nC @ 10 V 60 V ±20V 6500 pF @ 25 V AEC-Q101 - PG-TO263-3-2 Automotive 107W (Tc) -55°C ~ 175°C (TJ)
DI200N04PQ

DI200N04PQ

MOSFET PWRQFN 5X6 40V 0.0013OHM

Diotec Semiconductor

5,000 -
DI200N04PQ

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200A (Tc) 10V 1.3mOhm @ 100A, 10V Surface Mount 4V @ 250µA 92 nC @ 10 V 40 V ±20V 5768 pF @ 20 V AEC-Q101 - 8-QFN (5x6) Automotive 180W (Tc) -55°C ~ 150°C (TJ)
IPI80N06S407AKSA2

IPI80N06S407AKSA2

MOSFET N-CH 60V 80A TO262-3

Infineon Technologies

675 -
IPI80N06S407AKSA2

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 7.4mOhm @ 80A, 10V Through Hole 4V @ 40µA 56 nC @ 10 V 60 V ±20V 4500 pF @ 25 V AEC-Q101 - PG-TO262-3-1 Automotive 79W (Tc) -55°C ~ 175°C (TJ)
IPI80N04S403AKSA1

IPI80N04S403AKSA1

MOSFET N-CH 40V 80A TO262-3

Infineon Technologies

498 -
IPI80N04S403AKSA1

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 3.7mOhm @ 80A, 10V Through Hole 4V @ 53µA 66 nC @ 10 V 40 V ±20V 5260 pF @ 25 V - - PG-TO262-3 - 94W (Tc) -55°C ~ 175°C (TJ)
SISS5108DN-T1-GE3

SISS5108DN-T1-GE3

N-CHANNEL 100-V (D-S) MOSFET POW

Vishay Siliconix

12,010 -
SISS5108DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15.4A (Ta), 55.9A (Tc) 7.5V, 10V 10.5mOhm @ 10A, 10V Surface Mount 4V @ 250µA 23 nC @ 10 V 100 V ±20V 1150 pF @ 50 V - - PowerPAK® 1212-8S - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ)
SIR5112DP-T1-RE3

SIR5112DP-T1-RE3

N-CHANNEL 100 V (D-S) MOSFET POW

Vishay Siliconix

5,851 -
SIR5112DP-T1-RE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12.6A (Ta), 42.6A (Tc) 7.5V, 10V 14.9mOhm @ 10A, 10V Surface Mount 4V @ 250µA 16 nC @ 10 V 100 V ±20V 790 pF @ 50 V - - PowerPAK® SO-8 - 5W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ)
IRF540

IRF540

MOSFET N-CH 100V 22A TO220AB

STMicroelectronics

2,588 -
IRF540

数据表

STripFET™ II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 77mOhm @ 11A, 10V Through Hole 4V @ 250µA 41 nC @ 10 V 100 V ±20V 870 pF @ 25 V - - TO-220 - 85W (Tc) -55°C ~ 175°C (TJ)
IRFI624GPBF

IRFI624GPBF

MOSFET N-CH 250V 3.4A TO220-3

Vishay Siliconix

9,679 -
IRFI624GPBF

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.4A (Tc) 10V 1.1Ohm @ 2A, 10V Through Hole 4V @ 250µA 14 nC @ 10 V 250 V ±20V 260 pF @ 25 V - - TO-220-3 - 30W (Tc) -55°C ~ 150°C (TJ)
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