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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
PJL9436A1_R2_00001 60V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	6,281	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	8.3A (Ta)	4.5V, 10V	17mOhm @ 8.3A, 10V	Surface Mount	2.5V @ 250µA	13.5 nC @ 4.5 V	60 V	±20V	1574 pF @ 25 V	-	-	8-SOP	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
FQD7N10LTM MOSFET N-CH 100V 5.8A DPAK UMW	4,721	-	询价单	数据表	*	-		Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFR5305CPBF MOSFET P-CH 55V 31A DPAK Infineon Technologies	2,761	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	31A (Tc)	10V	65mOhm @ 16A, 10V	Surface Mount	4V @ 250µA	63 nC @ 10 V	55 V	±20V	1200 pF @ 25 V	-	-	TO-252AA (DPAK)	-	110W (Tc)	-55°C ~ 175°C (TJ)
HUF76429P3 MOSFET N-CH 60V 47A TO220-3 onsemi	5,641	-	询价单	数据表	UltraFET™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	47A (Tc)	4.5V, 10V	22mOhm @ 47A, 10V	Through Hole	3V @ 250µA	46 nC @ 10 V	60 V	±16V	1480 pF @ 25 V	-	-	TO-220-3	-	110W (Tc)	-55°C ~ 175°C (TJ)
IRFB5620PBFXKMA1 TRENCH >=100V Infineon Technologies	9,922	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	25A (Tc)	10V	72.5mOhm @ 15A, 10V	Through Hole	5V @ 100µA	38 nC @ 10 V	200 V	±20V	1710 pF @ 50 V	-	-	PG-TO220-3-904	-	144W (Tc)	-55°C ~ 175°C (TJ)
HUFA76633S3ST MOSFET N-CH 100V 39A D2PAK onsemi	6,689	-	询价单	数据表	UltraFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	39A (Tc)	4.5V, 10V	35mOhm @ 39A, 10V	Surface Mount	3V @ 250µA	67 nC @ 10 V	100 V	±16V	1820 pF @ 25 V	-	-	TO-263 (D2PAK)	-	145W (Tc)	-55°C ~ 175°C (TJ)
IRC730PBF MOSFET N-CH 400V 5.5A TO220-5 Vishay Siliconix	9,681	-	询价单	数据表	HEXFET®	TO-220-5	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.5A (Tc)	10V	1Ohm @ 3.3A, 10V	Through Hole	4V @ 250µA	38 nC @ 10 V	400 V	±20V	700 pF @ 25 V	-	Current Sensing	TO-220-5	-	74W (Tc)	-55°C ~ 150°C (TJ)
2SK2299N MOSFET N-CH 450V 7A TO220FN Rohm Semiconductor	2,337	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	7A (Ta)	10V	1.1Ohm @ 4A, 10V	Through Hole	4V @ 1mA	-	450 V	±30V	870 pF @ 10 V	-	-	TO-220FN	-	30W (Tc)	150°C (TJ)
SIR826DP-T1-RE3 MOSFET N-CH 80V 60A PPAK SO-8 Vishay Siliconix	4,645	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	4.5V, 10V	4.8mOhm @ 20A, 10V	Surface Mount	2.8V @ 250µA	90 nC @ 10 V	80 V	±20V	2900 pF @ 40 V	-	-	PowerPAK® SO-8	-	104W (Tc)	-55°C ~ 150°C (TJ)
SUD35N10-26P-T4GE3 MOSFET N-CH 100V 35A TO252 Vishay Siliconix	6,212	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	7V, 10V	26mOhm @ 12A, 10V	Surface Mount	4.4V @ 250µA	47 nC @ 10 V	100 V	±20V	2000 pF @ 12 V	-	-	TO-252AA	-	8.3W (Ta), 83W (Tc)	-55°C ~ 175°C (TJ)
DMTH6002LPSW-13 MOSFET BVDSS: 41V~60V POWERDI506 Diodes Incorporated	7,127	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	205A (Tc)	4.5V, 10V	2mOhm @ 30A, 10V	Surface Mount	3V @ 250µA	131 nC @ 10 V	60 V	±20V	8289 pF @ 30 V	-	-	PowerDI5060-8 (SWP)	-	3W (Ta), 167W (Tc)	-55°C ~ 175°C (TJ)
IRF720LPBF MOSFET N-CH 400V 3.3A TO262-3 Vishay Siliconix	7,000	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	3.3A (Tc)	10V	1.8Ohm @ 2A, 10V	Through Hole	4V @ 250µA	20 nC @ 10 V	400 V	±20V	410 pF @ 25 V	-	-	TO-262-3	-	3.1W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)
IRFB7437GPBF MOSFET N CH 40V 195A TO220AB Infineon Technologies	3,617	-	询价单	数据表	HEXFET®, StrongIRFET™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	6V, 10V	2mOhm @ 100A, 10V	Through Hole	3.9V @ 150µA	225 nC @ 10 V	40 V	±20V	7330 pF @ 25 V	-	-	TO-220AB	-	-	-
AOWF600A70F MOSFET N-CH 700V 8.5A TO262F Alpha & Omega Semiconductor Inc.	3,088	-	询价单	数据表	aMOS5™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	8.5A (Tj)	10V	600mOhm @ 2.5A, 10V	Through Hole	4V @ 250µA	14.5 nC @ 10 V	700 V	±20V	900 pF @ 100 V	-	-	TO-262F	-	25W (Tc)	-55°C ~ 150°C (TJ)
XP60SA290DH MOSFET N-CH 600V 13.3A TO252 YAGEO XSEMI	991	-	询价单	数据表	XP60SA290D	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13.3A (Tc)	10V	290mOhm @ 5.8A, 10V	Surface Mount	5V @ 250µA	48 nC @ 10 V	600 V	±20V	1632 pF @ 100 V	-	-	TO-252	-	2W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)
DMNH10H028SK3Q-13 MOSFET N-CH 100V 55A TO252 Diodes Incorporated	2,069	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	55A (Tc)	10V	28mOhm @ 20A, 10V	Surface Mount	4V @ 250µA	36 nC @ 10 V	100 V	±20V	2245 pF @ 50 V	-	-	TO-252-3	-	2W (Ta)	-55°C ~ 175°C (TJ)
NTMFS0D7N04XMT1G 40V T10M IN S08FL PACKAGE onsemi	1,458	-	询价单	数据表	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	9.18A (Ta), 323A (Tc)	10V	0.7mOhm @ 50A, 10V	Surface Mount	3.5V @ 180µA	71.6 nC @ 10 V	40 V	±20V	4595 pF @ 25 V	-	-	5-DFN (5x6) (8-SOFL)	-	134W (Tc)	-55°C ~ 175°C (TJ)
CSD18511KTT MOSFET N-CH 40V 194A DDPAK Texas Instruments	174	-	询价单	数据表	NexFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	194A (Ta)	4.5V, 10V	2.6mOhm @ 100A, 10V	Surface Mount	2.4V @ 250µA	64 nC @ 10 V	40 V	±20V	5940 pF @ 20 V	-	-	TO-263 (DDPAK-3)	-	188W (Ta)	-55°C ~ 175°C (TJ)
TQM032NH04LCR RLG 40V, 81A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation	7,932	-	询价单	数据表	PerFET™	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	23A (Ta), 81A (Tc)	4.5V, 10V	3.2mOhm @ 40A, 10V	Surface Mount	2.2V @ 250µA	75 nC @ 10 V	40 V	±16V	-	AEC-Q101	-	8-PDFN (5x6)	Automotive	115W (Tc)	-55°C ~ 175°C (TJ)
SIJ4106DP-T1-GE3 N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix	6,000	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	15.8A (Ta), 59A (Tc)	7.5V, 10V	8.3mOhm @ 15A, 10V	Surface Mount	3.8V @ 250µA	64 nC @ 10 V	100 V	±20V	3610 pF @ 50 V	-	-	PowerPAK® SO-8	-	5W (Ta), 69.4W (Tc)	-55°C ~ 150°C (TJ)

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