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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
APTM50UM25SG

APTM50UM25SG

MOSFET N-CH 500V 149A MODULE

Microsemi Corporation

7,022 -
APTM50UM25SG

数据表

- J3 Module Bulk Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 149A (Tc) 10V 25mOhm @ 74.5A, 10V Chassis Mount 5V @ 10mA 364 nC @ 10 V 500 V ±30V 17500 pF @ 25 V - - Module - 1250W (Tc) -40°C ~ 150°C (TJ)
APTM100U13SG

APTM100U13SG

MOSFET N-CH 1000V 65A MODULE

Microsemi Corporation

6,514 -
APTM100U13SG

数据表

- J3 Module Bulk Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 65A (Tc) 10V 145mOhm @ 32.5A, 10V Chassis Mount 4V @ 10mA 2000 nC @ 10 V 1000 V ±30V 31600 pF @ 25 V - - Module - 1250W (Tc) -40°C ~ 150°C (TJ)
APTM20UM05SG

APTM20UM05SG

MOSFET N-CH 200V 317A MODULE

Microsemi Corporation

9,502 -
APTM20UM05SG

数据表

- J3 Module Bulk Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 317A (Tc) 10V 5mOhm @ 158.5A, 10V Chassis Mount 5V @ 10mA 448 nC @ 10 V 200 V ±30V 27400 pF @ 25 V - - Module - 1136W (Tc) -40°C ~ 150°C (TJ)
APTM50UM19SG

APTM50UM19SG

MOSFET N-CH 500V 163A MODULE

Microsemi Corporation

9,970 -
APTM50UM19SG

数据表

- J3 Module Bulk Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 163A (Tc) 10V 19mOhm @ 81.5A, 10V Chassis Mount 5V @ 10mA 492 nC @ 10 V 500 V ±30V 22400 pF @ 25 V - - Module - 1136W (Tc) -40°C ~ 150°C (TJ)
APTM120DA15G

APTM120DA15G

MOSFET N-CH 1200V 60A SP6

Microsemi Corporation

9,564 -
APTM120DA15G

数据表

- SP6 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 175mOhm @ 30A, 10V Chassis Mount 5V @ 10mA 748 nC @ 10 V 1200 V ±30V 20600 pF @ 25 V - - SP6 - 1250W (Tc) -40°C ~ 150°C (TJ)
APTM120SK15G

APTM120SK15G

MOSFET N-CH 1200V 60A SP6

Microsemi Corporation

2,287 -
APTM120SK15G

数据表

- SP6 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 175mOhm @ 30A, 10V Chassis Mount 5V @ 10mA 748 nC @ 10 V 1200 V ±30V 20600 pF @ 25 V - - SP6 - 1250W (Tc) -40°C ~ 150°C (TJ)
APTM120UM95FAG

APTM120UM95FAG

MOSFET N-CH 1200V 103A SP6

Microsemi Corporation

2,474 -
APTM120UM95FAG

数据表

- SP6 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 103A (Tc) 10V 114mOhm @ 51.5A, 10V Chassis Mount 5V @ 15mA 1122 nC @ 10 V 1200 V ±30V 30900 pF @ 25 V - - SP6 - 2272W (Tc) -40°C ~ 150°C (TJ)
APTM120U10DAG

APTM120U10DAG

MOSFET N-CH 1200V 160A SP6

Microsemi Corporation

5,208 -
APTM120U10DAG

数据表

- SP6 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 160A (Tc) 10V 120mOhm @ 58A, 10V Chassis Mount 5V @ 20mA 1100 nC @ 10 V 1200 V ±30V 28900 pF @ 25 V - - SP6 - 3290W (Tc) -40°C ~ 150°C (TJ)
JAN2N6898

JAN2N6898

MOSFET P-CHANNEL 100V 25A TO3

Microsemi Corporation

7,821 -
JAN2N6898

数据表

- TO-204AA, TO-3 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 200mOhm @ 15.8A, 10V Through Hole 4V @ 250µA - 100 V ±20V 3000 pF @ 25 V - - TO-3 Military 150W (Tc) -55°C ~ 150°C (TJ)
JANSR2N7389

JANSR2N7389

MOSFET P-CH 100V 6.5A TO205AF

Microsemi Corporation

5,264 -
JANSR2N7389

数据表

- TO-205AF Metal Can Tray Obsolete P-Channel MOSFET (Metal Oxide) 6.5A (Tc) 12V 350mOhm @ 6.5A, 12V Through Hole 4V @ 1mA 45 nC @ 12 V 100 V ±20V - MIL-PRF-19500/630 - TO-205AF (TO-39) Military 25W (Tc) -55°C ~ 150°C
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