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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT40SM120SSICFET N-CH 1200V 41A D3PAK Microsemi Corporation |
9,400 | - |
|
数据表 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 41A (Tc) | 20V | 100mOhm @ 20A, 20V | Surface Mount | 3V @ 1mA (Typ) | 130 nC @ 20 V | 1200 V | +25V, -10V | 2560 pF @ 1000 V | - | - | D3PAK | - | 273W (Tc) | -55°C ~ 175°C (TJ) |
|
APT8024LVRGMOSFET N-CH 800V 33A TO264 Microsemi Corporation |
4,535 | - |
|
数据表 |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 33A (Tc) | 10V | 240mOhm @ 16.5A, 10V | Through Hole | 4V @ 2.5mA | 425 nC @ 10 V | 800 V | - | 7740 pF @ 25 V | - | - | TO-264 [L] | - | - | - |
|
APT20M19JVRMOSFET N-CH 200V 112A ISOTOP Microsemi Corporation |
4,231 | - |
|
数据表 |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 112A (Tc) | 10V | 19mOhm @ 500mA, 10V | Chassis Mount | 4V @ 1mA | 495 nC @ 10 V | 200 V | ±30V | 11640 pF @ 25 V | - | - | ISOTOP® | - | 500W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT5510JFLLMOSFET N-CH 550V 44A ISOTOP Microsemi Corporation |
2,900 | - |
|
数据表 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 44A (Tc) | 10V | 100mOhm @ 22A, 10V | Chassis Mount | 5V @ 2.5mA | 124 nC @ 10 V | 550 V | ±30V | 5823 pF @ 25 V | - | - | ISOTOP® | - | 463W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT40M70JVFRMOSFET N-CH 400V 53A ISOTOP Microsemi Corporation |
4,917 | - |
|
数据表 |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 53A (Tc) | 10V | 70mOhm @ 26.5A, 10V | Chassis Mount | 4V @ 2.5mA | 495 nC @ 10 V | 400 V | ±30V | 8890 pF @ 25 V | - | - | ISOTOP® | - | 450W (Tc) | -55°C ~ 150°C (TJ) |
|
APT10043JVRMOSFET N-CH 1000V 22A ISOTOP Microsemi Corporation |
6,352 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 22A (Tj) | - | 430mOhm @ 500mA, 10V | Chassis Mount | 4V @ 1mA | 480 nC @ 10 V | 1000 V | - | 9000 pF @ 25 V | - | - | ISOTOP® | - | - | - |
|
|
APT31N80JC3MOSFET N-CH 800V 31A ISOTOP Microsemi Corporation |
7,013 | - |
|
数据表 |
CoolMOS™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 31A (Tc) | 10V | 145mOhm @ 22A, 10V | Chassis Mount | 3.9V @ 2mA | 355 nC @ 10 V | 800 V | ±20V | 4510 pF @ 25 V | - | - | ISOTOP® | - | 833W (Tc) | -55°C ~ 150°C (TJ) |
|
APT8024B2LLGMOSFET N-CH 800V 31A T-MAX Microsemi Corporation |
5 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 31A (Tc) | 10V | 240mOhm @ 15.5A, 10V | Through Hole | 5V @ 2.5mA | 160 nC @ 10 V | 800 V | ±30V | 4670 pF @ 25 V | - | - | T-MAX™ [B2] | - | 565W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT70SM70JSICFET N-CH 700V 49A SOT227 Microsemi Corporation |
7,672 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Bulk | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 49A (Tc) | 20V | 70mOhm @ 32.5A, 20V | Chassis Mount | 2.5V @ 1mA | 125 nC @ 20 V | 700 V | +25V, -10V | - | - | - | SOT-227 | - | 165W (Tc) | -55°C ~ 175°C (TJ) |
|
|
APT50N60JCU2MOSFET N-CH 600V 52A SOT227 Microsemi Corporation |
8,250 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 52A (Tc) | 10V | 45mOhm @ 22.5A, 10V | Chassis Mount | 3.9V @ 3mA | 150 nC @ 10 V | 600 V | ±20V | 7200 pF @ 25 V | - | - | SOT-227 | - | 290W (Tc) | -40°C ~ 150°C (TJ) |
