Microsemi Corporation|场效应晶体管（FETs）、MOSFETs - 页 3

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
APT70SM70B SICFET N-CH 700V 65A TO247 Microsemi Corporation	7,076	-	询价单	数据表	-	TO-247-3	Bulk	Obsolete	N-Channel	SiCFET (Silicon Carbide)	65A (Tc)	20V	70mOhm @ 32.5A, 20V	Through Hole	2.5V @ 1mA	125 nC @ 20 V	700 V	+25V, -10V	-	-	-	TO-247 [B]	-	300W (Tc)	-55°C ~ 175°C (TJ)
APT53N60SC6 MOSFET N-CH 600V 53A D3PAK Microsemi Corporation	5,016	-	询价单	数据表	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	53A (Tc)	10V	70mOhm @ 25.8A, 10V	Surface Mount	3.5V @ 1.72mA	154 nC @ 10 V	600 V	±20V	4020 pF @ 25 V	-	-	D3PAK	-	417W (Tc)	-55°C ~ 150°C (TJ)
APT10M09B2VFRG MOSFET N-CH 100V 100A T-MAX Microsemi Corporation	9,108	-	询价单	数据表	POWER MOS V®	TO-247-3 Variant	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	9mOhm @ 50A, 10V	Through Hole	4V @ 2.5mA	350 nC @ 10 V	100 V	±30V	9875 pF @ 25 V	-	-	T-MAX™ [B2]	-	625W (Tc)	-55°C ~ 150°C (TJ)
APT70SM70S SICFET N-CH 700V 65A D3PAK Microsemi Corporation	4,252	-	询价单	数据表	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Bulk	Obsolete	N-Channel	SiCFET (Silicon Carbide)	65A (Tc)	20V	70mOhm @ 32.5A, 20V	Surface Mount	2.5V @ 1mA	125 nC @ 20 V	700 V	+25V, -10V	-	-	-	D3PAK	-	220W (Tc)	-55°C ~ 175°C (TJ)
APT36N90BC3G MOSFET N-CH 900V 36A TO247 Microsemi Corporation	5,518	-	询价单	数据表	CoolMOS™	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	36A (Tc)	10V	120mOhm @ 18A, 10V	Through Hole	3.5V @ 2.9mA	252 nC @ 10 V	900 V	±20V	7463 pF @ 25 V	-	-	TO-247 [B]	-	390W (Tc)	-55°C ~ 150°C (TJ)
APT20M22B2VFRG MOSFET N-CH 200V 100A T-MAX Microsemi Corporation	9,569	-	询价单	数据表	POWER MOS V®	TO-247-3 Variant	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	22mOhm @ 500mA, 10V	Through Hole	4V @ 2.5mA	435 nC @ 10 V	200 V	±30V	10200 pF @ 25 V	-	-	T-MAX™ [B2]	-	520W (Tc)	-55°C ~ 150°C (TJ)
APT50M80B2VRG MOSFET N-CH 500V 58A T-MAX Microsemi Corporation	5,782	-	询价单	数据表	POWER MOS V®	TO-247-3 Variant	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	58A (Tc)	10V	80mOhm @ 29A, 10V	Through Hole	4V @ 2.5mA	423 nC @ 10 V	500 V	-	8797 pF @ 25 V	-	-	T-MAX™ [B2]	-	-	-
APT40M70LVFRG MOSFET N-CH 400V 57A TO264 Microsemi Corporation	7,920	-	询价单	数据表	POWER MOS V®	TO-264-3, TO-264AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	57A (Tc)	10V	70mOhm @ 500mA, 10V	Through Hole	4V @ 2.5mA	495 nC @ 10 V	400 V	±30V	8890 pF @ 25 V	-	-	TO-264 [L]	-	520W (Tc)	-55°C ~ 150°C (TJ)
APT40SM120B SICFET N-CH 1200V 41A TO247 Microsemi Corporation	4,159	-	询价单	数据表	-	TO-247-3	Bulk	Obsolete	N-Channel	SiCFET (Silicon Carbide)	41A (Tc)	20V	100mOhm @ 20A, 20V	Through Hole	3V @ 1mA (Typ)	130 nC @ 20 V	1200 V	+25V, -10V	2560 pF @ 1000 V	-	-	TO-247	-	273W (Tc)	-55°C ~ 175°C (TJ)
APT8024LLLG MOSFET N-CH 800V 31A TO264 Microsemi Corporation	8,413	-	询价单	数据表	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	31A (Tc)	10V	240mOhm @ 15.5A, 10V	Through Hole	5V @ 2.5mA	160 nC @ 10 V	800 V	±30V	4670 pF @ 25 V	-	-	TO-264 [L]	-	565W (Tc)	-55°C ~ 150°C (TJ)

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