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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
APT6017LFLLG

APT6017LFLLG

MOSFET N-CH 600V 35A TO264

Microsemi Corporation

15 -
APT6017LFLLG

数据表

POWER MOS 7® TO-264-3, TO-264AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 170mOhm @ 17.5A, 10V Through Hole 5V @ 2.5mA 100 nC @ 10 V 600 V ±30V 4500 pF @ 25 V - - TO-264 [L] - 500W (Tc) -55°C ~ 150°C (TJ)
JANTX2N6804

JANTX2N6804

MOSFET P-CH 100V 11A TO204AA

Microsemi Corporation

2,784 -
JANTX2N6804

数据表

- TO-204AA, TO-3 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 360mOhm @ 11A, 10V Through Hole 4V @ 250µA 29 nC @ 10 V 100 V ±20V - MIL-PRF-19500/562 - TO-204AA Military 4W (Ta), 75W (Tc) -55°C ~ 150°C (TJ)
APT30N60KC6

APT30N60KC6

MOSFET N-CH 600V 30A TO220

Microsemi Corporation

7,737 -
APT30N60KC6

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) - 125mOhm @ 14.5A, 10V Through Hole 3.5V @ 960µA 88 nC @ 10 V 600 V - 2267 pF @ 25 V - - TO-220 [K] - 219W (Tc) -55°C ~ 150°C (TJ)
APT47N65BC3G

APT47N65BC3G

MOSFET N-CH 650V 47A TO247

Microsemi Corporation

9,392 -
APT47N65BC3G

数据表

CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 70mOhm @ 30A, 10V Through Hole 3.9V @ 2.7mA 260 nC @ 10 V 650 V ±20V 7015 pF @ 25 V - - TO-247 [B] - 417W (Tc) -55°C ~ 150°C (TJ)
APT94N65B2C3G

APT94N65B2C3G

MOSFET N-CH 650V 94A T-MAX

Microsemi Corporation

5,752 -
APT94N65B2C3G

数据表

CoolMOS™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 94A (Tc) 10V 35mOhm @ 47A, 10V Through Hole 3.9V @ 5.8mA 580 nC @ 10 V 650 V ±20V 13940 pF @ 25 V - - T-MAX™ [B2] - 833W (Tc) -55°C ~ 150°C (TJ)
APTC90DAM60T1G

APTC90DAM60T1G

MOSFET N-CH 900V 59A SP1

Microsemi Corporation

9,077 -
APTC90DAM60T1G

数据表

CoolMOS™ SP1 Tray Obsolete N-Channel MOSFET (Metal Oxide) 59A (Tc) 10V 60mOhm @ 52A, 10V Chassis Mount 3.5V @ 6mA 540 nC @ 10 V 900 V ±20V 13600 pF @ 100 V - - SP1 - 462W (Tc) -40°C ~ 150°C (TJ)
APT38N60SC6

APT38N60SC6

MOSFET N-CH 600V 38A D3PAK

Microsemi Corporation

9,464 -
APT38N60SC6

数据表

CoolMOS™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Bulk Active N-Channel MOSFET (Metal Oxide) 38A (Tc) 10V 99mOhm @ 18A, 10V Surface Mount 3.5V @ 1.2mA 112 nC @ 10 V 600 V ±20V 2826 pF @ 25 V - - D3PAK - 278W (Tc) -55°C ~ 150°C (TJ)
APT33N90JCCU2

APT33N90JCCU2

MOSFET N-CH 900V 33A SOT227

Microsemi Corporation

6,636 -
APT33N90JCCU2

数据表

- SOT-227-4, miniBLOC Bulk Obsolete N-Channel MOSFET (Metal Oxide) 33A (Tc) 10V 120mOhm @ 26A, 10V Chassis Mount 3.5V @ 3mA 270 nC @ 10 V 900 V ±20V 6800 pF @ 100 V - - SOT-227 - 290W (Tc) -40°C ~ 150°C (TJ)
APTC90DAM60CT1G

APTC90DAM60CT1G

MOSFET N-CH 900V 59A SP1

Microsemi Corporation

2,790 -
APTC90DAM60CT1G

数据表

CoolMOS™ SP1 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 59A (Tc) 10V 60mOhm @ 52A, 10V Chassis Mount 3.5V @ 6mA 540 nC @ 10 V 900 V ±20V 13600 pF @ 100 V - - SP1 - 462W (Tc) -40°C ~ 150°C (TJ)
APT12067B2LLG

APT12067B2LLG

MOSFET N-CH 1200V 18A T-MAX

Microsemi Corporation

8,041 -
APT12067B2LLG

数据表

POWER MOS 7® TO-247-3 Variant Bulk Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 670mOhm @ 9A, 10V Through Hole 5V @ 2.5mA 150 nC @ 10 V 1200 V ±30V 4420 pF @ 25 V - - T-MAX™ [B2] - 565W (Tc) -55°C ~ 150°C (TJ)
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